公开(公告)号：US20100264115A1

公开(公告)日：2010-10-21

申请号：US12526460

申请日：2008-02-04

申请人： Kohei Kawamura ,  Yasuo Kobayashi ,  Toshihisa Nozawa ,  Kiyotaka Ishibashi

发明人： Kohei Kawamura ,  Yasuo Kobayashi ,  Toshihisa Nozawa ,  Kiyotaka Ishibashi

IPC分类号： B23Q1/00 ,  H01L21/3065 ,  H05H1/24 ,  C23C16/513

CPC分类号： H01L21/68742 ,  C23C16/455 ,  C23C16/458 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/50 ,  H01J37/3244 ,  H01L21/6831 ,  H01L21/6833 ,  H01L21/68735 ,  H01L21/6875

摘要： Provided is a holding stage structure which holds a substrate and disposed in a process chamber that is vacuum-evacuatable and allows a predetermined process to be performed on the substrate therein. The holding stage structure includes: a holding stage body on which the substrate is placed; an elevation pin mechanism lowering the substrate on the holding stage body or raising the substrate from the holding stage body; and a stepped portion formed on the holding stage body so that a peripheral portion of a rear surface of the substrate placed on the holding stage body is exposed to a processing gas supplied into the process chamber.

摘要翻译： 提供一种保持台结构，其保持基板并且设置在真空可抽真空的处理室中，并且允许在其中对基板进行预定的处理。 保持台结构包括：放置基板的保持台体; 升降销机构，其使保持台体上的基板降低，或者使保持台体上升基板; 以及形成在保持台体上的台阶部分，使得放置在保持台体上的基板的后表面的周边部分暴露于供给到处理室中的处理气体。

公开(公告)号：US20100055816A1

公开(公告)日：2010-03-04

申请号：US12303568

申请日：2007-06-07

申请人： Toshihisa Nozawa ,  Yasushi Yagi

发明人： Toshihisa Nozawa ,  Yasushi Yagi

IPC分类号： H01L51/56 ,  C23C16/458 ,  C23C14/34 ,  C23F1/08

CPC分类号： C23C16/00 ,  C23C14/12 ,  C23C14/3464 ,  H01L51/56 ,  H05B33/10

摘要： A disclosed light-emitting-device manufacturing apparatus for manufacturing a light emitting device by forming, on an in-process substrate, an organic layer including an emitting layer includes multiple processing chambers to which the in-process substrate is sequentially transferred to be subjected to multiple substrate processing steps; and multiple substrate transfer chambers, each of which is connected to a different one of the processing chambers. A substrate holding container configured to contain the in-process substrate is sequentially connected to the substrate transfer chambers in order so that the in-process substrate is sequentially transferred to the processing chambers to be subjected to the substrate processing steps.

摘要翻译： 所公开的用于通过在工艺衬底上形成包括发光层的有机层来制造发光器件的发光器件制造装置包括多个处理室，其中处理前衬底被依次转印到其上 多个基板加工步骤; 以及多个衬底传送室，每个衬底传送室连接到不同的一个处理室。 被配置为容纳处理前基板的基板保持容器依次连接到基板传送室，使得处理前基板被顺序地转移到处理室以进行基板处理步骤。

公开(公告)号：US20090194238A1

公开(公告)日：2009-08-06

申请号：US12361066

申请日：2009-01-28

申请人： Kiyotaka Ishibashi ,  Toshihisa Nozawa ,  Shinya Nishimoto ,  Shinji Komoto

发明人： Kiyotaka Ishibashi ,  Toshihisa Nozawa ,  Shinya Nishimoto ,  Shinji Komoto

IPC分类号： C23F1/08 ,  C23C16/54

CPC分类号： H01L21/68728 ,  H01L21/68735

摘要： Provided is a plasma processing apparatus capable of easily processing a top surface of a mounting table to have a smooth shape, and also capable of preventing a temperature of a peripheral portion of a substrate from decreasing. A plasma processing apparatus 5 processes a substrate W in a processing vessel 20 by converting a processing gas, which is supplied into the processing vessel 20, into plasma, wherein a mounting table 21 for mounting the substrate W on a top surface thereof is installed in the processing vessel 20, and positioning pins 25 for positioning a peripheral portion of the substrate W are installed to be protruded in plural locations on the top surface of the mounting table 21, and the positioning pins 25 are inserted into recess portions 26 formed in the top surface of the mounting table 21.

摘要翻译： 提供一种等离子体处理装置，其能够容易地将安装台的顶面加工成具有平滑的形状，并且还能够防止基板的周边部分的温度下降。 等离子体处理装置5通过将供给到处理容器20的处理气体转换成等离子体来处理处理容器20中的基板W，其中，安装基板W的顶面的安装台21安装在 处理容器20和用于定位基板W的周边部分的定位销25安装成在安装台21的上表面上的多个位置突出，并且定位销25插入形成在安装台21的凹部26中。 安装台21的顶面。

公开(公告)号：US20090183677A1

公开(公告)日：2009-07-23

申请号：US12357493

申请日：2009-01-22

申请人： Caizhong Tian ,  Kiyotaka Ishibashi ,  Toshihisa Nozawa

发明人： Caizhong Tian ,  Kiyotaka Ishibashi ,  Toshihisa Nozawa

IPC分类号： B05C9/14

CPC分类号： H01L21/67248 ,  H01L21/67098

摘要： Provided are a temperature control device capable of performing a temperature control of, e.g., a chamber wall of a processing apparatus with a high precision; and a processing apparatus using the same. The temperature control device 50 includes a plurality of heater units 51 for heating each of a multiplicity of zones 55 into which a wall portion of a housing 2 of a chamber 1 is divided; a multiplicity of heater power supplies 52 for supplying power to each of the plurality of heater units 51; a number of thermocouples 53 for measuring the temperature of each of the multiplicity of zones 55; and a plurality of controllers 54 for controlling a corresponding power supply unit by an ILQ control based on a signal from each temperature sensor to set a temperature of a corresponding zone to a preset target temperature.

摘要翻译： 提供一种温度控制装置，其能够以高精度执行例如处理装置的室壁的温度控制; 以及使用该处理装置的处理装置。 温度控制装置50包括多个加热器单元51，用于加热腔室1的壳体2的壁部被分割成的多个区域55中的每一个; 用于向多个加热器单元51中的每一个供电的多个加热器电源52; 用于测量多个区域55中的每一个的温度的多个热电偶53; 以及多个控制器54，用于通过基于来自每个温度传感器的信号的ILQ控制来控制相应的电源单元，以将相应区域的温度设定为预设的目标温度。

公开(公告)号：US20090169344A1

公开(公告)日：2009-07-02

申请号：US12379767

申请日：2009-02-27

申请人： Toshihisa Nozawa ,  Satoru Kawakami

发明人： Toshihisa Nozawa ,  Satoru Kawakami

IPC分类号： H01L21/677

CPC分类号： H01L21/681 ,  C23C16/54 ,  H01L21/67259 ,  H01L21/67742

摘要： A substrate processing apparatus 1 has: sensors 21 and 22 provided in an etching chamber 14 and configured to detect a relative position between the etching chamber 14 and a wafer transfer mechanism 23; a control section 38 configured to correct positional displacement; a motor controller 39; a motor 28; and a motor 30. Since the positional displacement of a wafer W can be corrected, the wafer transfer mechanism 23 is capable of carrying the wafer W into the etching chamber 14 without causing any positional displacement, so that the wafer W can be placed on a susceptor 19 at a proper position.

摘要翻译： 基板处理装置1具有：设置在蚀刻室14中并被配置为检测蚀刻室14和晶片传送机构23之间的相对位置的传感器21和22; 被配置为校正位置偏移的控制部38; 马达控制器39; 马达28; 由于可以校正晶片W的位置偏移，晶片传送机构23能够将晶片W搬入蚀刻室14而不会发生任何位置偏移，从而可以将晶片W放置在 感受器19在适当的位置。

公开(公告)号：US20090156084A1

公开(公告)日：2009-06-18

申请号：US12304316

申请日：2007-06-13

申请人： Yasushi Yagi ,  Shingo Watanabe ,  Toshihisa Nozawa ,  Chuichi Kawamura ,  Kimihiko Yoshino ,  Tadahiro Ohmi

发明人： Yasushi Yagi ,  Shingo Watanabe ,  Toshihisa Nozawa ,  Chuichi Kawamura ,  Kimihiko Yoshino ,  Tadahiro Ohmi

IPC分类号： H01J9/00 ,  H05B33/10

CPC分类号： H01L51/001 ,  C23C14/12 ,  C23C14/28 ,  H01L51/56

摘要： Disclosed is a light emitting device manufacturing apparatus including a plurality of processing chambers for performing a substrate processing for forming, on a target substrate, a light emitting device having multiple layers including an organic layer, wherein each of the plurality of processing chambers is configured to perform a substrate process on the target substrate while maintaining the target substrate such that its device forming surface, on which the light emitting device is to be formed, is oriented toward a direction opposite to a direction of gravity.

摘要翻译： 公开了一种发光器件制造设备，包括：多个处理室，用于执行用于在目标衬底上形成包括有机层的多层的发光器件的衬底处理，其中，所述多个处理室中的每一个被配置为 在目标衬底上执行衬底处理，同时保持目标衬底，使得要在其上形成发光器件的器件形成表面朝向与重力方向相反的方向。

公开(公告)号：US20090074632A1

公开(公告)日：2009-03-19

申请号：US12274650

申请日：2008-11-20

申请人： Kiyotaka Ishibashi ,  Toshihisa Nozawa

发明人： Kiyotaka Ishibashi ,  Toshihisa Nozawa

IPC分类号： H05H1/24

CPC分类号： H01J37/32192 ,  H01J37/32238

摘要： A plasma processing apparatus includes a chamber for carrying out plasma processing inside, a top plate made of a dielectric material for sealing the upper side of this chamber, and an antenna section that serves as a high frequency supply for supplying high frequency waves into the chamber via this top plate. The top plate is provided with reflecting members inside thereof. The sidewalls of the reflecting members work as wave reflector for reflecting high frequency waves that propagate inside the top plate in the radius direction. Alternatively, no reflecting members may be provided in a manner in which the sidewalls of a recess of the top plate serve as a wave reflector means.

摘要翻译： 等离子体处理装置包括用于在内部进行等离子体处理的室，由用于密封该室的上侧的电介质材料制成的顶板和用作将高频波供应到室中的高频电源的天线部分 通过这个顶板。 顶板在其内设有反射构件。 反射部件的侧壁作为反射用于反射在顶板内部沿半径方向传播的高频波的波反射体。 或者，不能以顶板的凹部的侧壁用作波反射器装置的方式设置反射部件。

公开(公告)号：US20080035058A1

公开(公告)日：2008-02-14

申请号：US11632779

申请日：2005-07-21

申请人： Caizhong Tian ,  Kiyotaka Ishibashi ,  Junichi Kitagawa ,  Toshihisa Nozawa

发明人： Caizhong Tian ,  Kiyotaka Ishibashi ,  Junichi Kitagawa ,  Toshihisa Nozawa

IPC分类号： H05H1/46 ,  H01L21/205 ,  H01L21/3065

CPC分类号： H05H1/46 ,  H01J37/32192 ,  H01J37/32211

摘要： The present invention provides a plasma processing unit comprising: a processing vessel having an opening on a ceiling side thereof, and capable of creating a vacuum therein; a stage disposed in the processing vessel, for placing thereon an object to be processed; a top plate made of a dielectric, the top plate being hermetically fitted in the opening and allowing a microwave to pass therethrough; a planar antenna member disposed on the top plate, the planar antenna member being provided with a plurality of microwave radiating holes for radiating a microwave for plasma generation toward an inside of the processing vessel; a slow-wave member disposed on the planar antenna member, for shortening a wavelength of a microwave; and a microwave interference restraining part disposed on a lower surface of the top plate, the microwave interference restraining part separating the lower surface into a plurality of concentric zones and restraining a microwave interference between the zones.

摘要翻译： 本发明提供一种等离子体处理单元，包括：处理容器，其顶部具有开口，能够在其中产生真空; 设置在处理容器中的用于在其上放置待处理物体的台阶; 由电介质制成的顶板，顶板气密地装配在开口中并允许微波通过; 平面天线部件，其设置在所述顶板上，所述平面天线部件设置有多个微波辐射孔，用于向所述处理容器的内部放射用于等离子体产生的微波; 设置在所述平面天线构件上的慢波构件，用于缩短微波的波长; 以及微波干扰抑制部，其设置在所述顶板的下表面上，所述微波干涉抑制部将所述下表面分割为多个同心区域，并抑制所述区域之间的微波干扰。

公开(公告)号：US07268084B2

公开(公告)日：2007-09-11

申请号：US10954086

申请日：2004-09-30

申请人： Lee Chen ,  Hitomitsu Kambara ,  Caiz Hong Tian ,  Tetsuya Nishizuka ,  Toshihisa Nozawa

发明人： Lee Chen ,  Hitomitsu Kambara ,  Caiz Hong Tian ,  Tetsuya Nishizuka ,  Toshihisa Nozawa

IPC分类号： H01L21/302

CPC分类号： H01J37/32706 ,  H01J37/32211 ,  H01J37/3244 ,  H01L21/31116

摘要： A method of treating a substrate includes disposing the substrate in a processing chamber having a first chamber portion configured to define a plasma space and a second chamber portion configured to define a process space, introducing a first gas to the plasma space and introducing a second gas to the process space. A plasma is formed in the plasma space from the first gas using a plasma source coupled to the upper chamber portion, and a process chemistry for treating the substrate is formed in the process space by providing a grid positioned between the first chamber portion and the second chamber portion such that the plasma can diffuse from the plasma space to the process space.

摘要翻译： 处理衬底的方法包括将衬底设置在具有被配置为限定等离子体空间的第一室部分的处理室中，以及构造成限定处理空间的第二室部分，将第一气体引入等离子体空间并引入第二气体 到过程空间。 在等离子体空间中，使用与上室部分相连的等离子体源，在等离子体空间中形成等离子体，通过提供位于第一室部分和第二部分之间的格栅，在处理空间中形成用于处理基板的工艺化学品 室部分，使得等离子体可以从等离子体空间扩散到处理空间。

公开(公告)号：US20070000612A1

公开(公告)日：2007-01-04

申请号：US10569378

申请日：2004-08-26

申请人： Toshihisa Nozawa ,  Takaaki Matsuoka

发明人： Toshihisa Nozawa ,  Takaaki Matsuoka

IPC分类号： H01L21/306 ,  C23C16/00

CPC分类号： H01L21/67167 ,  H01L21/67173 ,  H01L21/67742 ,  Y10S414/139

摘要： A substrate processing apparatus includes a plurality of process chambers (20) for applying a process to substrate accommodated therein and a conveyance case (24) that conveys the accommodated substrates to the process chambers (20) and a transfer mechanism that moves the conveyance case (24) along a moving path. The conveyance case accommodates the substrates in an isolated state from an external atmosphere. The plurality of process chambers (20) are arranged in an aligned state on both sides of a moving path of the conveyance case (24). The conveyance case (24) has two conveyance ports (24a) in response to conveyance ports (20a) of the process chambers (20) arranged in alignment in two rows.

摘要翻译： 一种基板处理装置，包括：多个处理室，用于对容纳在其中的基板进行处理;以及传送箱，其将所容纳的基板输送到处理室;以及传送机构， 24）沿着移动路径。 输送箱容纳基板处于与外部气氛隔离的状态。 多个处理室（20）在输送箱（24）的移动路径的两侧以排列状态布置。 输送箱（24）响应于排列成两列排列的处理室（20）的输送口（20a），具有两个输送口（24a）。