Electron tube
    41.
    发明授权
    Electron tube 有权
    电子管

    公开(公告)号:US07176429B2

    公开(公告)日:2007-02-13

    申请号:US10571292

    申请日:2004-09-09

    IPC分类号: H01J40/16

    CPC分类号: H01J40/16 H01J9/233

    摘要: In an electron tube, one end of an insulating tube is protruded toward the inside of an envelope, and an avalanche photodiode (APD) is provided on the one end of the insulating tube. Another end of the insulating tube is connected to an outer stem of the envelope. Alkali sources are provided inside the envelope. The alkali sources are disposed inside the envelope and generates alkali metal vapor to thereby form a photocathode on a predetermined part of the internal surface of the envelope. The alkali sources and insulating tube are isolated from each other by a separating member. When the electron tube is manufactured, the alkali metal vapor that is generated from the alkali sources is not deposited on the insulating tube due to existence of the separating member. This prevents voltage resistance between the envelope and APD from being decreased and the electrical field in the electron tube from being adversely affected, thereby preventing incident efficiency of electrons to the APD from being decreased.

    摘要翻译: 在电子管中,绝缘管的一端朝向外壳的内侧突出,在绝缘管的一端设置有雪崩光电二极管(APD)。 绝缘管的另一端连接到外壳的外部杆。 信封内提供碱源。 碱源设置在封套内,产生碱金属蒸气,由此在外壳的内表面的规定部分上形成光电阴极。 碱源和绝缘管通过分离构件彼此隔离。 当制造电子管时,由于分离部件的存在,从碱源产生的碱金属蒸气不会沉积在绝缘管上。 这防止了封套和APD之间的电阻降低,并且电子管中的电场受到不利影响,从而防止电子对APD的入射效率降低。

    Electron tube
    42.
    发明申请
    Electron tube 有权
    电子管

    公开(公告)号:US20070029930A1

    公开(公告)日:2007-02-08

    申请号:US10571077

    申请日:2004-09-09

    IPC分类号: H01J40/06

    CPC分类号: H01J40/16

    摘要: In an electron tube, an insulating tube protrudes inside an envelope. One end of the insulating tube is connected to the envelope. An avalanche photo diode (APD) is provided on the other end of the insulating tube. A ground voltage is applied to the envelope and a positive high voltage is applied to the APD. Photoelectrons which are emitted in response to an incident light on a photocathode are converged by an electrical field in the envelope and enter the APD. Thereafter, the incident photoelectrons are amplified and detected. Since a positive high voltage is not exposed to the envelope, the electron tube can easily be handled and is excellent in safety.

    摘要翻译: 在电子管中,绝缘管在外壳内突出。 绝缘管的一端连接到外壳。 在绝缘管的另一端设置有雪崩光电二极管(APD)。 将接地电压施加到封套,并向APD施加正高电压。 响应于光电阴极上的入射光而发射的光电子被信封中的电场会聚并进入APD。 此后,对入射光电子进行放大和检测。 由于正高电压不暴露于外壳,电子管可以容易地被处理并且安全性优异。

    Electron beam detection device and electron tube
    43.
    发明申请
    Electron beam detection device and electron tube 有权
    电子束检测装置和电子管

    公开(公告)号:US20070023652A1

    公开(公告)日:2007-02-01

    申请号:US10571322

    申请日:2004-09-09

    IPC分类号: G21K7/00

    摘要: An insulating tube has one end and another end. An An avalanche photodiode (APD) is provided outside the one end of the insulating tube. The another end of the insulating tube is air-tightly connected to an outer flange through a stem inner wall. Capacitors electrically connected to the APD are provided in the insulating tube. The capacitors remove direct current components from signals that the APD generates when detecting electrons. By providing the capacitors in the insulating tube, response of output signals can be prevented from being impaired.

    摘要翻译: 绝缘管具有一端和另一端。 安全雪崩光电二极管(APD)设置在绝缘管一端的外侧。 绝缘管的另一端通过杆内壁与外凸缘气密连接。 电连接到APD的电容器设置在绝缘管中。 电容器从检测电子时产生的信号中除去直流电流分量。 通过在绝缘管中设置电容器,可以防止输出信号的响应受损。

    Photomultiplier having a multilayer semiconductor device
    44.
    发明授权
    Photomultiplier having a multilayer semiconductor device 失效
    具有多层半导体器件的光电倍增管

    公开(公告)号:US5654536A

    公开(公告)日:1997-08-05

    申请号:US557541

    申请日:1995-11-14

    摘要: In a photomultiplier of the present invention, a semiconductor device arranged in an envelope to oppose a photocathode is constituted by a semiconductor substrate of a first conductivity type, a carrier multiplication layer of a second conductivity type different from the first conductivity type, which is formed on the semiconductor substrate by opitaxial growth, a breakdown voltage control layer of the second conductivity type, which is formed on the carrier multiplication layer and has a dopant concentration higher than that of the carrier multiplication layer, a first insulating layer formed on the breakdown voltage control layer and said carrier multiplication layer while partially exposing the surface of the breakdown voltage control layer as a receptor for photoelectrons and consisting of a nitride, and an ohmic electrode layer formed on a peripheral surface portion of the receptor of the breakdown voltage control layer. When the dopant concentration distribution in the carrier multiplication layer is uniformly controlled on the basis of epitaxial growth, the uniformity of an avalanche multiplication gain for photoelectrons incident at different positions on the receptor of the semiconductor device is improved, thereby largely increasing the energy resolving power.

    摘要翻译: 在本发明的光电倍增器中,布置在外壳中以与光电阴极相对的半导体器件由第一导电类型的半导体衬底,不同于第一导电类型的第二导电类型的载流子倍增层构成,形成 在所述半导体衬底上通过外延生长形成第二导电类型的击穿电压控制层,所述第二导电类型的击穿电压控制层形成在所述载体倍增层上并且具有高于载流子倍增层的掺杂剂浓度的第一绝缘层, 控制层和所述载体倍增层,同时部分地暴露作为光电子的受体的击穿电压控制层的表面,并由氮化物和形成在击穿电压控制层的受体的外围表面部分上的欧姆电极层组成。 当基于外延生长均匀地控制载体倍增层中的掺杂剂浓度分布时,提高入射在半导体器件的接收器上的不同位置处的光电子的雪崩倍增益的均匀性,从而大大提高能量分辨能力 。

    Device for deriving a change of time-dependent information by converting
the information to positional-dependent information
    45.
    发明授权
    Device for deriving a change of time-dependent information by converting the information to positional-dependent information 失效
    通过将信息转换为与位置相关的信息来改变时间相关信息的设备

    公开(公告)号:US5180908A

    公开(公告)日:1993-01-19

    申请号:US759292

    申请日:1991-09-13

    申请人: Motohiro Suyama

    发明人: Motohiro Suyama

    CPC分类号: H01J31/502

    摘要: Time-dependent information such as light whose intensity varies with time is converted into positional information representing the change of the time-dependent information. A series of photoelectrons provided as the time-dependent information are accelerated or decelerated when passing through a region defined by first and second electrode to which a ramp voltage is applied so that the photoelectrons are accelerated or decelerated and are released at speeds varying depending on times. A speed analyzer analyzes the speeds of the photoelectrons and provides the positional information. The positional information is applied to a phosphor screen on which the positions of the photoelectrons applied thereto are displayed. The positions thereof represents the times involved with the photoelectrons.