公开(公告)号：US08947572B2

公开(公告)日：2015-02-03

申请号：US13254421

申请日：2010-05-24

申请人： Vincent Venezia ,  Duli Mao ,  Hsin-Chih Tai

发明人： Vincent Venezia ,  Duli Mao ,  Hsin-Chih Tai

IPC分类号： H04N3/14 ,  H01L27/146

CPC分类号： H01L27/14627 ,  H01L27/14629 ,  H01L27/1464

摘要： An apparatus for a dual-sided image sensor is described. The dual-sided image sensor captures frontside image data incident upon a frontside of the dual-sided image sensor within an array of photosensitive regions integrated into a semiconductor layer of the dual-sided image sensor. Backside image data incident upon a backside of the dual-sided image sensor is also captured within the same array of photosensitive regions.

摘要翻译： 描述了一种用于双面图像传感器的装置。 双面图像传感器捕获在整合到双面图像传感器的半导体层中的感光区域的阵列内入射到双面图像传感器的前侧的前侧图像数据。 入射到双面图像传感器背面的背面图像数据也被捕获在相同的光敏区域阵列内。

公开(公告)号：US20140048897A1

公开(公告)日：2014-02-20

申请号：US13587811

申请日：2012-08-16

申请人： Yin Qian ,  Hsin-Chih Tai ,  Gang Chen ,  Duli Mao ,  Vincent Venezia ,  Howard E. Rhodes

发明人： Yin Qian ,  Hsin-Chih Tai ,  Gang Chen ,  Duli Mao ,  Vincent Venezia ,  Howard E. Rhodes

IPC分类号： H01L31/02 ,  H01L31/18

CPC分类号： H01L27/1463 ,  H01L27/14689

摘要： Embodiments of a pixel including a substrate having a front surface and a photosensitive region formed in or near the front surface of the substrate. An isolation trench is formed in the front surface of the substrate adjacent to the photosensitive region. The isolation trench includes a trench having a bottom and sidewalls, a passivation layer formed on the bottom and the sidewalls, and a filler to fill the portion of the trench not filled by the passivation layer.

摘要翻译： 包括具有形成在基板的表面中或附近的前表面和感光区域的基板的像素的实施例。 在与感光区域相邻的基板的前表面中形成隔离沟槽。 隔离沟槽包括具有底部和侧壁的沟槽，形成在底部和侧壁上的钝化层，以及用于填充未被钝化层填充的沟槽部分的填料。

公开(公告)号：US08471316B2

公开(公告)日：2013-06-25

申请号：US13227099

申请日：2011-09-07

申请人： Hsin-Chih Tai ,  Keh-Chiang Ku ,  Duli Mao ,  Vincent Venezia ,  Gang Chen

发明人： Hsin-Chih Tai ,  Keh-Chiang Ku ,  Duli Mao ,  Vincent Venezia ,  Gang Chen

IPC分类号： H01L31/062

CPC分类号： H01L27/1463

摘要： An isolation area that provides additional active area between semiconductor devices on an integrated circuit is described. In one embodiment, the invention includes a complementary metal oxide semiconductor transistor of an image sensor having a source, a drain, and a gate between the source and the drain, the transistor having a channel to couple the source and the drain under the influence of the gate, and an isolation barrier surrounding a periphery of the source and the drain to isolate the source and the drain from other devices, wherein the isolation barrier is distanced from the central portion of the channel.

摘要翻译： 描述了在集成电路上的半导体器件之间提供附加有效面积的隔离区域。 在一个实施例中，本发明包括具有在源极和漏极之间的源极，漏极和栅极的图像传感器的互补金属氧化物半导体晶体管，晶体管具有在源极和漏极之间耦合源极和漏极的沟道 栅极和围绕源极和漏极的周边的隔离屏障，以将源极和漏极与其它器件隔离，其中隔离屏障与通道的中心部分分开。

公开(公告)号：US20130113065A1

公开(公告)日：2013-05-09

申请号：US13288731

申请日：2011-11-03

申请人： Yin Qian ,  Hsin-Chih Tai ,  Keh-Chiang Ku ,  Vincent Venezia ,  Duli Mao ,  Wei Zheng ,  Howard E. Rhodes

发明人： Yin Qian ,  Hsin-Chih Tai ,  Keh-Chiang Ku ,  Vincent Venezia ,  Duli Mao ,  Wei Zheng ,  Howard E. Rhodes

IPC分类号： H01L31/0216 ,  H01L21/768 ,  H01L31/02

CPC分类号： H01L23/481 ,  H01L21/6835 ,  H01L23/522 ,  H01L24/05 ,  H01L27/14636 ,  H01L27/1464 ,  H01L2221/6835 ,  H01L2224/05548 ,  H01L2224/05553 ,  H01L2224/05567 ,  H01L2924/00014 ,  H01L2924/12043 ,  H01L2224/05552 ,  H01L2924/00

摘要： Embodiments of a semiconductor device that includes a semiconductor substrate and a cavity disposed in the semiconductor substrate that extends at least from a first side of the semiconductor substrate to a second side of the semiconductor substrate. The semiconductor device also includes an insulation layer disposed over the first side of the semiconductor substrate and coating sidewalls of the cavity. A conductive layer including a bonding pad is disposed over the insulation layer. The conductive layer extends into the cavity and connects to a metal stack disposed below the second side of the semiconductor substrate. A through silicon via pad is disposed below the second side of the semiconductor substrate and connected to the metal stack. The through silicon via pad is position to accept a through silicon via.

摘要翻译： 半导体器件的实施例包括半导体衬底和设置在半导体衬底中的至少从半导体衬底的第一侧至半导体衬底的第二侧延伸的空腔。 半导体器件还包括设置在半导体衬底的第一侧上并涂覆空腔的侧壁的绝缘层。 包括接合焊盘的导电层设置在绝缘层上。 导电层延伸到空腔中并且连接到设置在半导体衬底的第二侧下方的金属叠层。 贯穿硅通孔焊盘设置在半导体衬底的第二侧下方并连接到金属堆叠。 贯穿硅通孔焊盘的位置是接受硅通孔。

公开(公告)号：US08345132B2

公开(公告)日：2013-01-01

申请号：US12842808

申请日：2010-07-23

申请人： Hsin-Chih Tai ,  Yin Qian ,  Duli Mao ,  Vincent Venezia

发明人： Hsin-Chih Tai ,  Yin Qian ,  Duli Mao ,  Vincent Venezia

IPC分类号： H04N3/14 ,  H04N5/335 ,  H04N9/04 ,  H04N9/083

CPC分类号： H04N9/045 ,  H01L27/14621 ,  H01L27/14643

摘要： A color image sensor is disclosed. The color image sensor includes a pixel array including a color filter array (“CFA”) overlaying an array of photo-sensors for acquiring a color image. The CFA includes first color filter elements of a first color overlaying a first group of the photo-sensors and second color filter elements of a second color overlaying a second group of the photo-sensors. The first color filter elements contribute to a first color channel of the color image and the second color filter elements contribute to a second color channel of the color image. The color image sensor further includes a color combiner unit coupled to combine the first color channel with the second color channel to generate a third color channel of the color image based on the first and second color channels. An output port is coupled to the pixel array to output the color image having three color channels including the first, second, and third color channels.

摘要翻译： 公开了彩色图像传感器。 彩色图像传感器包括像素阵列，其包括覆盖用于获取彩色图像的光电传感器阵列的滤色器阵列（CFA）。 CFA包括覆盖第一组光传感器的第一颜色的第一滤色器元件和覆盖第二组光传感器的第二颜色的第二滤色器元件。 第一滤色器元件有助于彩色图像的第一颜色通道，并且第二滤色器元件有助于彩色图像的第二颜色通道。 彩色图像传感器还包括颜色组合器单元，其耦合以组合第一颜色通道和第二颜色通道，以基于第一和第二颜色通道生成彩色图像的第三颜色通道。 输出端口耦合到像素阵列以输出具有包括第一，第二和第三颜色通道的三个颜色通道的彩色图像。

公开(公告)号：US20120175722A1

公开(公告)日：2012-07-12

申请号：US12986032

申请日：2011-01-06

申请人： Hsin-Chih Tai ,  Vincent Venezia ,  Yin Qian ,  Duli Mao ,  Keh-Chiang Ku

发明人： Hsin-Chih Tai ,  Vincent Venezia ,  Yin Qian ,  Duli Mao ,  Keh-Chiang Ku

IPC分类号： H01L27/146 ,  H01L31/18

CPC分类号： H01L27/14643 ,  H01L27/14636 ,  H01L27/1464

摘要： A backside illuminated imaging sensor with a seal ring support includes an epitaxial layer having an imaging array formed in a front side of the epitaxial layer. A metal stack is coupled to the front side of the epitaxial layer, wherein the metal stack includes a seal ring formed in an edge region of the imaging sensor. An opening is included that extends from the back side of the epitaxial layer to a metal pad of the seal ring to expose the metal pad. The seal ring support is disposed on the metal pad and within the opening to structurally support the seal ring.

摘要翻译： 具有密封环支撑件的背面照明成像传感器包括具有形成在外延层的前侧的成像阵列的外延层。 金属叠层耦合到外延层的前侧，其中金属堆叠包括形成在成像传感器的边缘区域中的密封环。 包括从外延层的背面延伸到密封环的金属焊盘以露出金属焊盘的开口。 密封环支撑件设置在金属垫上并且在开口内，以在结构上支撑密封环。

公开(公告)号：US20120018620A1

公开(公告)日：2012-01-26

申请号：US13250237

申请日：2011-09-30

申请人： Yin Qian ,  Hsin-Chih Tai ,  Duli Mao ,  Vincent Venezia ,  Howard E. Rhodes

发明人： Yin Qian ,  Hsin-Chih Tai ,  Duli Mao ,  Vincent Venezia ,  Howard E. Rhodes

IPC分类号： H01L27/146 ,  H01L31/0232

CPC分类号： H01L27/14647 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464

摘要： A backside illuminated imaging sensor includes a vertical stacked sensor that reduces cross talk by using different silicon layers to form photodiodes at separate levels within a stack (or separate stacks) to detect different colors. Blue light-, green light-, and red light-detection silicon layers are formed, with the blue light detection layer positioned closest to the backside of the sensor and the red light detection layer positioned farthest from the backside of the sensor. An anti-reflective coating (ARC) layer can be inserted in between the red and green light detection layers to reduce the optical cross talk captured by the red light detection layer. Amorphous polysilicon can be used to form the red light detection layer to boost the efficiency of detecting red light.

摘要翻译： 背面照明成像传感器包括垂直堆叠传感器，其通过使用不同的硅层在堆叠（或单独的堆叠）内的不同级别形成光电二极管来减少串扰，以检测不同的颜色。 形成蓝光，绿光和红光检测硅层，蓝光检测层位于最靠近传感器背面的位置，红光检测层位于离传感器背面最远的位置。 可以在红色和绿色光检测层之间插入抗反射涂层（ARC）层，以减少由红光检测层捕获的光学交叉对话。 可以使用非晶多晶硅来形成红光检测层，以提高检测红光的效率。

公开(公告)号：US08097890B2

公开(公告)日：2012-01-17

申请号：US12029400

申请日：2008-02-11

申请人： WeiDong Qian ,  Hsin-Chih Tai ,  Vincent Venezia ,  Howard E. Rhodes

发明人： WeiDong Qian ,  Hsin-Chih Tai ,  Vincent Venezia ,  Howard E. Rhodes

IPC分类号： H01L33/00

CPC分类号： G02B3/0018 ,  H01L27/14627

摘要： An image sensor having a plurality of micro-lenses disposed on a semiconductor substrate. A first micro-lens has a different focal length, height, shape, curvature, thickness, etc., than a second micro-lens. The image sensor may be back side illuminated or front side illuminated.

摘要翻译： 一种具有设置在半导体衬底上的多个微透镜的图像传感器。 第一微透镜具有与第二微透镜不同的焦距，高度，形状，曲率，厚度等。 图像传感器可以是背面照明的或正面照亮的。

公开(公告)号：US07989859B2

公开(公告)日：2011-08-02

申请号：US12142678

申请日：2008-06-19

申请人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Howard E. Rhodes

发明人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Howard E. Rhodes

IPC分类号： H01L31/062

CPC分类号： H01L27/14625 ,  H01L27/1464 ,  H01L27/14643

摘要： A backside illuminated imaging sensor includes a semiconductor layer, a metal interconnect layer and a silicide light reflecting layer. The semiconductor layer has a front surface and a back surface. An imaging pixel that includes a photodiode region is formed within the semiconductor layer. The metal interconnect layer is electrically coupled to the photodiode region and the silicide light reflecting layer is coupled between the metal interconnect layer and the front surface of the semiconductor layer. In operation, the photodiode region receives light from the back surface of the semiconductor layer, where a portion of the received light propagates through the photodiode region to the silicide light reflecting layer. The silicide light reflecting layer is configured to reflect the portion of light received from the photodiode region.

摘要翻译： 背面照明成像传感器包括半导体层，金属互连层和硅化物光反射层。 半导体层具有前表面和后表面。 在半导体层内形成包括光电二极管区域的成像像素。 金属互连层电耦合到光电二极管区域，并且硅化物光反射层耦合在金属互连层和半导体层的前表面之间。 在操作中，光电二极管区域从半导体层的背面接收光，其中接收的光的一部分通过光电二极管区域传播到硅化物光反射层。 硅化物光反射层被配置为反射从光电二极管区域接收的光的部分。

公开(公告)号：US20110140221A1

公开(公告)日：2011-06-16

申请号：US12985950

申请日：2011-01-06

申请人： Vincent Venezia ,  Hsin-chih Tai

发明人： Vincent Venezia ,  Hsin-chih Tai

IPC分类号： H01L31/0232

CPC分类号： H01L27/14625 ,  H01L27/14629 ,  H01L27/14685

摘要： The invention involves the integration of curved micro-mirrors over a photodiode active area (collection area) in a CMOS image sensor (CIS) process. The curved micro-mirrors reflect light that has passed through the collection area back into the photo diode. The curved micro-mirrors are best implemented in a backside illuminated device (BSI).

摘要翻译： 本发明涉及在CMOS图像传感器（CIS）工艺中的光电二极管有源区域（采集区域）上的弯曲微镜的集成。 弯曲的微镜将已经通过收集区的光反射回光电二极管。 弯曲的微反射镜最好在背面照明设备（BSI）中实现。