公开(公告)号：US09419035B2

公开(公告)日：2016-08-16

申请号：US13344312

申请日：2012-01-05

申请人： Fei Wu ,  Hongjun Li ,  Yin Qian ,  Hsin-Chih Tai ,  Howard E. Rhodes ,  Jizhang Shan

发明人： Fei Wu ,  Hongjun Li ,  Yin Qian ,  Hsin-Chih Tai ,  Howard E. Rhodes ,  Jizhang Shan

IPC分类号： H01L27/146 ,  G02B3/00

CPC分类号： H01L27/14627 ,  G02B3/0018 ,  H01L27/1464 ,  H01L27/14685

摘要： An example image sensor includes first, second, and third micro-lenses. The first micro-lens is in a first color pixel and has a first curvature and a first height. The second micro-lens is in a second color pixel and has a second curvature and a second height. The third micro-lens is in a third color pixel and has a third curvature and a third height. The first curvature is the same as both the second curvature and the third curvature and the first height is greater than the second height and the second height is greater than the third height, such that light absorption depths for the first, second, and third color pixels are the same.

摘要翻译： 示例性图像传感器包括第一，第二和第三微透镜。 第一微透镜是第一颜色像素并且具有第一曲率和第一高度。 第二微透镜处于第二颜色像素中并且具有第二曲率和第二高度。 第三微透镜是第三色像素，具有第三曲率和第三高度。 第一曲率与第二曲率和第三曲率都相同，第一高度大于第二高度，第二高度大于第三高度，使得第一，第二和第三颜色的光吸收深度 像素是相同的。

公开(公告)号：US08947572B2

公开(公告)日：2015-02-03

申请号：US13254421

申请日：2010-05-24

申请人： Vincent Venezia ,  Duli Mao ,  Hsin-Chih Tai

发明人： Vincent Venezia ,  Duli Mao ,  Hsin-Chih Tai

IPC分类号： H04N3/14 ,  H01L27/146

CPC分类号： H01L27/14627 ,  H01L27/14629 ,  H01L27/1464

摘要： An apparatus for a dual-sided image sensor is described. The dual-sided image sensor captures frontside image data incident upon a frontside of the dual-sided image sensor within an array of photosensitive regions integrated into a semiconductor layer of the dual-sided image sensor. Backside image data incident upon a backside of the dual-sided image sensor is also captured within the same array of photosensitive regions.

摘要翻译： 描述了一种用于双面图像传感器的装置。 双面图像传感器捕获在整合到双面图像传感器的半导体层中的感光区域的阵列内入射到双面图像传感器的前侧的前侧图像数据。 入射到双面图像传感器背面的背面图像数据也被捕获在相同的光敏区域阵列内。

公开(公告)号：US20140048897A1

公开(公告)日：2014-02-20

申请号：US13587811

申请日：2012-08-16

申请人： Yin Qian ,  Hsin-Chih Tai ,  Gang Chen ,  Duli Mao ,  Vincent Venezia ,  Howard E. Rhodes

发明人： Yin Qian ,  Hsin-Chih Tai ,  Gang Chen ,  Duli Mao ,  Vincent Venezia ,  Howard E. Rhodes

IPC分类号： H01L31/02 ,  H01L31/18

CPC分类号： H01L27/1463 ,  H01L27/14689

摘要： Embodiments of a pixel including a substrate having a front surface and a photosensitive region formed in or near the front surface of the substrate. An isolation trench is formed in the front surface of the substrate adjacent to the photosensitive region. The isolation trench includes a trench having a bottom and sidewalls, a passivation layer formed on the bottom and the sidewalls, and a filler to fill the portion of the trench not filled by the passivation layer.

摘要翻译： 包括具有形成在基板的表面中或附近的前表面和感光区域的基板的像素的实施例。 在与感光区域相邻的基板的前表面中形成隔离沟槽。 隔离沟槽包括具有底部和侧壁的沟槽，形成在底部和侧壁上的钝化层，以及用于填充未被钝化层填充的沟槽部分的填料。

公开(公告)号：US08643132B2

公开(公告)日：2014-02-04

申请号：US13155969

申请日：2011-06-08

申请人： Gang Chen ,  Duli Mao ,  Hsin-Chih Tai ,  Howard E. Rhodes

发明人： Gang Chen ,  Duli Mao ,  Hsin-Chih Tai ,  Howard E. Rhodes

IPC分类号： H01L31/06 ,  H01L31/062 ,  H01L31/113

CPC分类号： H01L27/14616 ,  H01L27/14612 ,  H01L27/14643

摘要： Embodiments of the invention describe providing high dynamic range imaging (HDRI or simply HDR) to an imaging pixel by coupling a floating diffusion node of the imaging pixel to a plurality of metal-oxide semiconductor (MOS) capacitance regions. It is understood that a MOS capacitance region only turns “on” (i.e., changes the overall capacitance of the floating diffusion node) when the voltage at the floating diffusion node (or a voltage difference between a gate node and the floating diffusion node) is greater than its threshold voltage; before the MOS capacitance region is “on” it does not contribute to the overall capacitance or conversion gain of the floating diffusion node.Each of the MOS capacitance regions will have different threshold voltages, thereby turning “on” at different illumination conditions. This increases the dynamic range of the imaging pixel, thereby providing HDR for the host imaging system.

摘要翻译： 本发明的实施例描述了通过将成像像素的浮动扩散节点耦合到多个金属氧化物半导体（MOS）电容区域来向成像像素提供高动态范围成像（HDRI或简单的HDR）。 可以理解，当浮动扩散节点处的电压（或者栅极节点和浮动扩散节点之间的电压差）为（...）时，MOS电容区域只会变为“导通”（即，改变浮动扩散节点的整体电容） 大于其阈值电压; 在MOS电容区域“接通”之前，它不会对浮动扩散节点的整体电容或转换增益有贡献。 每个MOS电容区域将具有不同的阈值电压，从而在不同的照明条件下“打开”。 这增加了成像像素的动态范围，从而为主机成像系统提供HDR。

公开(公告)号：US20130264688A1

公开(公告)日：2013-10-10

申请号：US13441627

申请日：2012-04-06

申请人： Yin Qian ,  Hsin-Chih Tai ,  Duli Mao ,  Tiejun Dai ,  Howard E. Rhodes ,  Hongli Yang

发明人： Yin Qian ,  Hsin-Chih Tai ,  Duli Mao ,  Tiejun Dai ,  Howard E. Rhodes ,  Hongli Yang

IPC分类号： H01L29/06 ,  H01L21/28

CPC分类号： H01L24/80 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/92 ,  H01L24/94 ,  H01L25/0657 ,  H01L27/14634 ,  H01L2224/04042 ,  H01L2224/05567 ,  H01L2224/05571 ,  H01L2224/08145 ,  H01L2224/2401 ,  H01L2224/24105 ,  H01L2224/24147 ,  H01L2224/48151 ,  H01L2224/73251 ,  H01L2224/80357 ,  H01L2224/80896 ,  H01L2224/80986 ,  H01L2224/82031 ,  H01L2224/82106 ,  H01L2224/9202 ,  H01L2224/94 ,  H01L2225/06544 ,  H01L2924/00014 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/3511 ,  H01L2224/80001 ,  H01L2924/00012 ,  H01L2224/05552

摘要： An integrated circuit system includes a first device wafer that has a first semiconductor layer proximate to a first metal layer including a first conductor disposed within a first metal layer oxide. A second device wafer that has a second semiconductor layer proximate to a second metal layer including a second conductor disposed within a second metal layer oxide is also included. A frontside of the first metal layer oxide is bonded to a frontside of the second metal layer oxide at an oxide bonding interface between the first metal layer oxide and the second metal layer oxide. A conductive path couples the first conductor to the second conductor with conductive material formed in a cavity etched between the first conductor and the second conductor and etched through the oxide bonding interface and through the second semiconductor layer from a backside of the second device wafer.

摘要翻译： 集成电路系统包括具有靠近第一金属层的第一半导体层的第一器件晶片，第一金属层包括设置在第一金属层氧化物内的第一导体。 还包括具有靠近第二金属层的第二半导体层的第二器件晶片，该第二金属层包括设置在第二金属层氧化物内的第二导体。 在第一金属层氧化物和第二金属层氧化物之间的氧化物接合界面处，第一金属层氧化物的前侧结合到第二金属层氧化物的前侧。 导电路径将第一导体耦合到第二导体，导电材料形成在蚀刻在第一导体和第二导体之间的空腔中，并通过氧化物接合界面从第二器件晶片的背面蚀刻穿过第二半导体层。

公开(公告)号：US08471316B2

公开(公告)日：2013-06-25

申请号：US13227099

申请日：2011-09-07

申请人： Hsin-Chih Tai ,  Keh-Chiang Ku ,  Duli Mao ,  Vincent Venezia ,  Gang Chen

发明人： Hsin-Chih Tai ,  Keh-Chiang Ku ,  Duli Mao ,  Vincent Venezia ,  Gang Chen

IPC分类号： H01L31/062

CPC分类号： H01L27/1463

摘要： An isolation area that provides additional active area between semiconductor devices on an integrated circuit is described. In one embodiment, the invention includes a complementary metal oxide semiconductor transistor of an image sensor having a source, a drain, and a gate between the source and the drain, the transistor having a channel to couple the source and the drain under the influence of the gate, and an isolation barrier surrounding a periphery of the source and the drain to isolate the source and the drain from other devices, wherein the isolation barrier is distanced from the central portion of the channel.

摘要翻译： 描述了在集成电路上的半导体器件之间提供附加有效面积的隔离区域。 在一个实施例中，本发明包括具有在源极和漏极之间的源极，漏极和栅极的图像传感器的互补金属氧化物半导体晶体管，晶体管具有在源极和漏极之间耦合源极和漏极的沟道 栅极和围绕源极和漏极的周边的隔离屏障，以将源极和漏极与其它器件隔离，其中隔离屏障与通道的中心部分分开。

公开(公告)号：US20130113065A1

公开(公告)日：2013-05-09

申请号：US13288731

申请日：2011-11-03

申请人： Yin Qian ,  Hsin-Chih Tai ,  Keh-Chiang Ku ,  Vincent Venezia ,  Duli Mao ,  Wei Zheng ,  Howard E. Rhodes

发明人： Yin Qian ,  Hsin-Chih Tai ,  Keh-Chiang Ku ,  Vincent Venezia ,  Duli Mao ,  Wei Zheng ,  Howard E. Rhodes

IPC分类号： H01L31/0216 ,  H01L21/768 ,  H01L31/02

CPC分类号： H01L23/481 ,  H01L21/6835 ,  H01L23/522 ,  H01L24/05 ,  H01L27/14636 ,  H01L27/1464 ,  H01L2221/6835 ,  H01L2224/05548 ,  H01L2224/05553 ,  H01L2224/05567 ,  H01L2924/00014 ,  H01L2924/12043 ,  H01L2224/05552 ,  H01L2924/00

摘要： Embodiments of a semiconductor device that includes a semiconductor substrate and a cavity disposed in the semiconductor substrate that extends at least from a first side of the semiconductor substrate to a second side of the semiconductor substrate. The semiconductor device also includes an insulation layer disposed over the first side of the semiconductor substrate and coating sidewalls of the cavity. A conductive layer including a bonding pad is disposed over the insulation layer. The conductive layer extends into the cavity and connects to a metal stack disposed below the second side of the semiconductor substrate. A through silicon via pad is disposed below the second side of the semiconductor substrate and connected to the metal stack. The through silicon via pad is position to accept a through silicon via.

摘要翻译： 半导体器件的实施例包括半导体衬底和设置在半导体衬底中的至少从半导体衬底的第一侧至半导体衬底的第二侧延伸的空腔。 半导体器件还包括设置在半导体衬底的第一侧上并涂覆空腔的侧壁的绝缘层。 包括接合焊盘的导电层设置在绝缘层上。 导电层延伸到空腔中并且连接到设置在半导体衬底的第二侧下方的金属叠层。 贯穿硅通孔焊盘设置在半导体衬底的第二侧下方并连接到金属堆叠。 贯穿硅通孔焊盘的位置是接受硅通孔。

公开(公告)号：US20130082163A1

公开(公告)日：2013-04-04

申请号：US13252883

申请日：2011-10-04

申请人： Gang Chen ,  Hsin-Chih Tai ,  Duli Mao ,  Howard E. Rhodes

发明人： Gang Chen ,  Hsin-Chih Tai ,  Duli Mao ,  Howard E. Rhodes

IPC分类号： H01L27/148 ,  B23P25/00

CPC分类号： H01L27/14627 ,  H01L27/14685 ,  Y10T29/49885

摘要： Techniques and architectures for providing a coating for one or more micro-lenses of a pixel array. In an embodiment, a pixel element includes a micro-lens and a coating portion extending over a surface of the micro-lens, where a profile of the coating portion is super-conformal to, or at least conformal to, a profile of the micro-lens. In another embodiment, the coating portion is formed at least in part by orienting the surface of the micro-lens to face generally downward with the direction of gravity, the orienting to allow a fluid coating material to flow for formation of the coating portion.

摘要翻译： 用于为像素阵列的一个或多个微透镜提供涂层的技术和架构。 在一个实施例中，像素元件包括微透镜和在微透镜的表面上延伸的涂层部分，其中涂层部分的轮廓与微观透镜的轮廓超共形或至少共形 -镜片。 在另一个实施例中，涂覆部分至少部分地通过使微透镜的表面定向以与重力方向大致向下的方式形成，定向以允许流体涂覆材料流动以形成涂覆部分。

公开(公告)号：US08345132B2

公开(公告)日：2013-01-01

申请号：US12842808

申请日：2010-07-23

申请人： Hsin-Chih Tai ,  Yin Qian ,  Duli Mao ,  Vincent Venezia

发明人： Hsin-Chih Tai ,  Yin Qian ,  Duli Mao ,  Vincent Venezia

IPC分类号： H04N3/14 ,  H04N5/335 ,  H04N9/04 ,  H04N9/083

CPC分类号： H04N9/045 ,  H01L27/14621 ,  H01L27/14643

摘要： A color image sensor is disclosed. The color image sensor includes a pixel array including a color filter array (“CFA”) overlaying an array of photo-sensors for acquiring a color image. The CFA includes first color filter elements of a first color overlaying a first group of the photo-sensors and second color filter elements of a second color overlaying a second group of the photo-sensors. The first color filter elements contribute to a first color channel of the color image and the second color filter elements contribute to a second color channel of the color image. The color image sensor further includes a color combiner unit coupled to combine the first color channel with the second color channel to generate a third color channel of the color image based on the first and second color channels. An output port is coupled to the pixel array to output the color image having three color channels including the first, second, and third color channels.

摘要翻译： 公开了彩色图像传感器。 彩色图像传感器包括像素阵列，其包括覆盖用于获取彩色图像的光电传感器阵列的滤色器阵列（CFA）。 CFA包括覆盖第一组光传感器的第一颜色的第一滤色器元件和覆盖第二组光传感器的第二颜色的第二滤色器元件。 第一滤色器元件有助于彩色图像的第一颜色通道，并且第二滤色器元件有助于彩色图像的第二颜色通道。 彩色图像传感器还包括颜色组合器单元，其耦合以组合第一颜色通道和第二颜色通道，以基于第一和第二颜色通道生成彩色图像的第三颜色通道。 输出端口耦合到像素阵列以输出具有包括第一，第二和第三颜色通道的三个颜色通道的彩色图像。

公开(公告)号：US20120175722A1

公开(公告)日：2012-07-12

申请号：US12986032

申请日：2011-01-06

申请人： Hsin-Chih Tai ,  Vincent Venezia ,  Yin Qian ,  Duli Mao ,  Keh-Chiang Ku

发明人： Hsin-Chih Tai ,  Vincent Venezia ,  Yin Qian ,  Duli Mao ,  Keh-Chiang Ku

IPC分类号： H01L27/146 ,  H01L31/18

CPC分类号： H01L27/14643 ,  H01L27/14636 ,  H01L27/1464

摘要： A backside illuminated imaging sensor with a seal ring support includes an epitaxial layer having an imaging array formed in a front side of the epitaxial layer. A metal stack is coupled to the front side of the epitaxial layer, wherein the metal stack includes a seal ring formed in an edge region of the imaging sensor. An opening is included that extends from the back side of the epitaxial layer to a metal pad of the seal ring to expose the metal pad. The seal ring support is disposed on the metal pad and within the opening to structurally support the seal ring.

摘要翻译： 具有密封环支撑件的背面照明成像传感器包括具有形成在外延层的前侧的成像阵列的外延层。 金属叠层耦合到外延层的前侧，其中金属堆叠包括形成在成像传感器的边缘区域中的密封环。 包括从外延层的背面延伸到密封环的金属焊盘以露出金属焊盘的开口。 密封环支撑件设置在金属垫上并且在开口内，以在结构上支撑密封环。