-
公开(公告)号:US07507667B2
公开(公告)日:2009-03-24
申请号:US11744446
申请日:2007-05-04
申请人: Woo Sik Yoo
发明人: Woo Sik Yoo
IPC分类号: H01L21/44
CPC分类号: H01L21/67115 , H01L21/324 , H01L21/76254 , H01L21/76838 , Y10S438/918 , Y10S438/967
摘要: A copper film is treated by applying light at short wavelengths, e.g., at less than 0.6 μm, to heat the copper film and generate a large temperature gradient from the surface of the copper to the interface between the copper and underlying silicon. As a result, grain growth in the copper is enhanced.
摘要翻译: 通过施加短波长例如小于0.6μm的光来处理铜膜,以加热铜膜并产生从铜表面到铜和下硅之间的界面的大的温度梯度。 结果,铜的晶粒生长增强。
-
公开(公告)号:US07194199B2
公开(公告)日:2007-03-20
申请号:US11144359
申请日:2005-06-03
申请人: Woo Sik Yoo
发明人: Woo Sik Yoo
CPC分类号: H01L21/68764 , H01L21/67109 , H01L21/67178 , H01L21/6719 , H01L21/67745
摘要: A process chamber includes an opening, two or more stacked cold plates adjacent the opening, two or more stacked hot plates adjacent the cold plates, and a rotatable wafer transport capable of moving a wafer between the cold plates and between the hot plates for processing of the wafer. The wafer can be rapidly heated while between the hot plates. The wafer transport has perpendicular walls about a pivot such that when the wafer is between the cold plates or between the hot plates, one of the walls separates the cold and hot portions, thereby increasing the efficiency of cooling and heating.
摘要翻译: 处理室包括开口,邻近开口的两个或多个堆叠的冷板,与冷板相邻的两个或多个堆叠的热板,以及能够在冷板之间和热板之间移动晶片的可旋转的晶片输送器,用于处理 晶圆。 可以在热板之间快速加热晶片。 晶片输送器具有围绕枢轴的垂直壁,使得当晶片位于冷板之间或热板之间时,其中一个壁分离冷热部分,从而提高冷却和加热的效率。
-
公开(公告)号:US07063583B2
公开(公告)日:2006-06-20
申请号:US09815678
申请日:2001-03-23
申请人: Woo Sik Yoo
发明人: Woo Sik Yoo
IPC分类号: H01J9/395
CPC分类号: G03F7/70016 , H01J9/395 , H01J61/00 , H01J61/12 , H01J61/16 , H01J61/28 , H01J61/305 , H01J61/307 , H01J61/32 , H01J61/322 , H01J61/327 , H01J61/38
摘要: A multi-spectral uniform light source provides a single light source for a variety of applications. The gas or gases inside the light source may be exchanged for another gas or gases depending on the desired application and need for a particular wavelength of emitted light.
-
公开(公告)号:US06790475B2
公开(公告)日:2004-09-14
申请号:US10120056
申请日:2002-04-09
申请人: Woo Sik Yoo
发明人: Woo Sik Yoo
IPC分类号: C23C16448
CPC分类号: C23C16/4481 , C23C16/4485
摘要: A method and system are provided for delivering a source gas to a processing chamber. A source gas delivery method includes providing a precursor chamber configured to hold precursor vapor, providing a saturated precursor vapor at a selected pressure within the precursor chamber, and flowing or diffusing saturated precursor vapor from the precursor chamber to the processing chamber until a selected pressure is provided in the processing chamber. A source gas delivery system includes a precursor chamber configured to hold precursor vapor, a heat source for heating a precursor liquid to provide saturated precursor vapor at a selected pressure within the precursor chamber, and a vapor pathway allowing saturated precursor vapor to enter a processing chamber until a selected pressure is provided in the processing chamber. Advantageously, the present invention allows for improved precursor vapor delivery and enhanced control over thin film deposition with less waste of precursor material.
摘要翻译: 提供了一种将源气体输送到处理室的方法和系统。 源气体输送方法包括提供配置成保持前体蒸气的前体室,在前体室内以选定压力提供饱和前体蒸气,以及将饱和前体蒸气从前体室流动或扩散至处理室,直到所选压力为 设置在处理室中。 原料气体输送系统包括配置成保持前体蒸气的前体室,用于加热前体液体以在前体室内以选定压力提供饱和前体蒸气的热源,以及允许饱和前体蒸气进入处理室 直到在处理室中提供所选择的压力。 有利地,本发明允许改进的前体蒸气输送和增强的对薄膜沉积的控制,同时较少的前体材料的浪费。
-
公开(公告)号:US06602797B2
公开(公告)日:2003-08-05
申请号:US10131172
申请日:2002-04-23
申请人: Hiromitsu Kuribayashi , Woo Sik Yoo
发明人: Hiromitsu Kuribayashi , Woo Sik Yoo
IPC分类号: H01L2131
CPC分类号: H01L21/67778 , H01L21/67742 , H01L21/67748 , H01L21/67766 , H01L21/67772 , Y10S438/908
摘要: A wafer processing system occupies minimal floor space by using vertically mounted modules such as reactors, load locks, and cooling stations. Further saving in floor space is achieved by using a loading station which employs rotational motion to move a wafer carrier into a load lock. The wafer processing system includes a robot having extension, rotational, and vertical motion for accessing vertically mounted modules. The robot is internally cooled and has a heat resistant end-effector, making the robot compatible with high temperature semiconductor processing.
摘要翻译: 通过使用垂直安装的模块(如反应堆,装载锁和冷却站),晶圆处理系统占地面积最小。 通过使用采用旋转运动的装载站将晶片载体移动到装载锁中,可以进一步节省占地面积。 晶片处理系统包括具有用于访问垂直安装的模块的延伸,旋转和垂直运动的机器人。 机器人内部冷却并具有耐热的末端执行器,使机器人与高温半导体加工兼容。
-
公开(公告)号:US06575739B1
公开(公告)日:2003-06-10
申请号:US10123723
申请日:2002-04-15
申请人: Woo Sik Yoo
发明人: Woo Sik Yoo
IPC分类号: F27D300
CPC分类号: H01L21/67115 , C30B31/14
摘要: A processing system including a chamber defining an interior cavity having a processing tube assembly arranged within the interior cavity. A heating assembly moveable relative to the processing tube assembly from a first position where said processing tube assembly is disposed within the heating assembly and a second position where the processing tube assembly is exposed to an internal environment within the interior cavity of the chamber.
摘要翻译: 一种处理系统,包括限定内部空腔的室,其具有布置在所述内部空腔内的处理管组件。 加热组件可相对于处理管组件从第一位置移动,其中所述处理管组件设置在加热组件内,第二位置处于处理管组件暴露于室内腔内的内部环境中。
-
公开(公告)号:US06568899B1
公开(公告)日:2003-05-27
申请号:US09451678
申请日:1999-11-30
申请人: Hiromitsu Kuribayashi , Woo Sik Yoo
发明人: Hiromitsu Kuribayashi , Woo Sik Yoo
IPC分类号: B65G4907
CPC分类号: H01L21/67766 , Y10S414/135 , Y10S414/139
摘要: A wafer processing system occupies minimal floor space by using vertically mounted modules such as reactors, load locks, and cooling stations. Further saving in floor space is achieved by using a loading station which employs rotational motion to move a wafer carrier into a load lock. The wafer processing system includes a robot having extension, rotational, and vertical motion for accessing vertically mounted modules. The robot is internally cooled and has a heat resistant end-effector, making the robot compatible with high temperature semiconductor processing.
摘要翻译: 通过使用垂直安装的模块(如反应堆,装载锁和冷却站),晶圆处理系统占地面积最小。 通过使用采用旋转运动的装载站将晶片载体移动到装载锁中,可以进一步节省占地面积。 晶片处理系统包括具有用于访问垂直安装的模块的延伸,旋转和垂直运动的机器人。 机器人内部冷却并具有耐热的末端执行器,使机器人与高温半导体加工兼容。
-
公开(公告)号:US06379073B1
公开(公告)日:2002-04-30
申请号:US09541865
申请日:2000-04-03
申请人: Woo Sik Yoo , Hiromitsu Kuribayashi
发明人: Woo Sik Yoo , Hiromitsu Kuribayashi
IPC分类号: F16C1106
CPC分类号: F16M11/14 , F16C11/106 , F16M11/2078 , F16M13/027 , F16M2200/065 , Y10T403/22 , Y10T403/32311
摘要: A positionable arm composed of multiple member segments connected by an adjustable joint which may be fixedly positioned and repeatedly repositioned. The first member includes an end portion defining a first connector opening and an inner surface defining a chamber. A slideable piston provided in the first member includes a first end and a second end, the first end being adjacent the chamber and creating a seal along the inner surface of the first member. A rotatable connector is received in the first member between the second end of said piston and the end portion of the first member, and a second member is attached to the rotatable connector. To position the arm, a pressurized fluid source supplies compressed air to the chamber, which presses the piston against the rotatable connector, fixedly clamping the connector between the piston and the end portion of the first chamber.
摘要翻译: 由可调节接头连接的多个构件段构成的可定位臂,其可固定地定位并重复定位。 第一构件包括限定第一连接器开口和限定腔室的内表面的端部。 设置在第一构件中的可滑动活塞包括第一端和第二端,第一端邻近室并且沿着第一构件的内表面产生密封。 可旋转连接器容纳在第一构件中,位于活塞的第二端和第一构件的端部之间,第二构件附接到可旋转的连接器。 为了定位臂,加压流体源将压缩空气供应到室,该室将活塞压靠在可旋转连接器上,将连接器固定地夹持在活塞和第一室的端部之间。
-
公开(公告)号:US06303906B1
公开(公告)日:2001-10-16
申请号:US09451494
申请日:1999-11-30
申请人: Woo Sik Yoo
发明人: Woo Sik Yoo
IPC分类号: F27B514
CPC分类号: H01L21/67115 , H01L21/67109
摘要: A heating apparatus and method for isothermally distributing a temperature across the surface of a semiconductor device during processing. Specifically, a chamber is provided defining a cavity, which is configured to receive a single semiconductor wafer. A plurality of resistive heating elements are provided and advantageously arranged in the cavity. The heating elements are disposed across the chamber and are aligned in close proximity to one another so as to provide an even heating temperature distribution. In accordance with the present invention, the cavity is divided into heating zones. The resistive heating elements are each individually assigned to a zone and are independently controllable. By individually varying the amount of energy emanating from each resistive heating element, an isothermal temperature distribution may be generated across each zone.
摘要翻译: 一种加热装置和方法,用于在加工过程中等温分布半导体器件的表面温度。 具体地,提供限定空腔的室,其被配置为容纳单个半导体晶片。 提供多个电阻加热元件并且有利地布置在空腔中。 加热元件跨过腔室设置并且彼此靠近地对准,以便提供均匀的加热温度分布。 根据本发明,空腔被分成加热区。 电阻加热元件分别被分配到一个区域并且是独立可控的。 通过单独改变从每个电阻加热元件发出的能量的量,可以在每个区域之间产生等温温度分布。
-
公开(公告)号:US06212088B1
公开(公告)日:2001-04-03
申请号:US09451493
申请日:1999-11-30
申请人: Woo Sik Yoo
发明人: Woo Sik Yoo
IPC分类号: H02M100
摘要: An adapter used in conjunction with voltage modules to provide multiple and variable DC output voltages. The adapter may include a circuit for stepping down an AC input voltage to lower AC output voltages. A voltage module is provided having an interface bus, configured to be coupleable to a distribution bus on the voltage adapter. Preferably, the voltage module includes AC-DC conversion circuitry, such that the AC output voltages received from the adapter may be converted to DC voltages. Once the adapter and voltage module are coupled together, the voltage module allows the user to select among the multiple DC output voltages provided. In some embodiments, the adapter includes additional circuitry for converting the stepped-down AC voltages into DC output voltages. Additional separate voltage modules may be coupled to the first voltage module, in series, to form a modular stack of voltage modules. Like the first voltage module, the second voltage module may have a selectable output voltage, as well.
摘要翻译: 与电压模块结合使用的适配器,可提供多个可变直流输出电压。 适配器可以包括用于降低AC输入电压以降低AC输出电压的电路。 提供具有接口总线的电压模块,其被配置为可与电压适配器上的分配总线耦合。 优选地,电压模块包括AC-DC转换电路,使得从适配器接收的AC输出电压可以被转换为DC电压。 一旦适配器和电压模块耦合在一起,电压模块允许用户在提供的多个DC输出电压之间进行选择。 在一些实施例中,适配器包括用于将降压AC电压转换成DC输出电压的附加电路。 额外的单独的电压模块可以串联耦合到第一电压模块,以形成模块化的电压模块组。 与第一电压模块一样,第二电压模块也可以具有可选择的输出电压。
-
-
-
-
-
-
-
-
-