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">41.发明授权Positive-working quinone diazide composition containing N,N',N"-substituted isocyanurate compound and associated article 失效含N，N'，N“ - 取代的异氰脲酸酯化合物和相关制品的正性醌醌二叠氮化合物组合物
公开(公告)号：US5332647A
公开(公告)日：1994-07-26
申请号：US111179
申请日：1993-08-24
CPC分类号： G03F7/0226
摘要： A positive-working photosensitive resin composition useful as a photoresist material in the fine patterning work for the manufacture of semiconductor devices is proposed. The composition is excellent in the storage stability and capable of giving a patterned resist layer having good film thickness retention, cross sectional profile of line patterns, resolution and heat resistance. The composition comprises, in addition to a conventional alkali-soluble novolac resin as a film-forming agent and a quinone diazide group containing compound as a photosensitizing agent, a specific isocyanurate compound substituted at each nitrogen atom with a hydroxy- and ter-butyl-substituted benzyl group.
摘要翻译： 提出了用于制造半导体器件的精细图案化工作中用作光致抗蚀剂材料的正性感光性树脂组合物。 该组合物的保存稳定性优异，能够得到具有良好的膜厚保持性，线图案的横截面轮廓，分辨率和耐热性的图案化抗蚀剂层。 该组合物除了常规的作为成膜剂的碱溶性酚醛清漆树脂和含有醌二叠氮基的化合物作为感光剂之外，还包括在每个氮原子处被羟基和叔丁基取代的异氰脲酸酯化合物， 取代的苄基。
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42.发明授权Positive photoresist composition and process and synthesizing polyphenol compound 失效正光致抗蚀剂组合物和工艺合成多酚化合物公开(公告)号：US06492085B1
公开(公告)日：2002-12-10
申请号：US09635404
申请日：2000-08-10
IPC分类号： G03F7023
CPC分类号： G03F7/022
摘要： The present invention provides a positive photoresist composition including (A) an alkali-soluble resin and (B) a photosensitizer, and the ingredient (B) is a quinonediazide ester of, for example, 2,6-bis[4-hydroxy-3-(2-hydroxy-3,5-dimethylbenzyl)-2,5-dimethylbenzyl]-4-methylphenol, where the average degree of esterification of 20% to 80%.
摘要翻译： 本发明提供了包含（A）碱溶性树脂和（B）光敏剂的正性光致抗蚀剂组合物，成分（B）是例如2,6-双[4-羟基-3 - （2-羟基-3,5-二甲基苄基）-2,5-二甲基苄基] -4-甲基苯酚，其中平均酯化度为20％至80％。
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43.发明授权公开(公告)号：US06406827B2
公开(公告)日：2002-06-18
申请号：US09322023
申请日：1999-05-28
IPC分类号： G03F7023
CPC分类号： G03F7/023 , G03F7/0226
摘要： A positive photoresist composition includes (A) an alkali-soluble resin, (B) a quinonediazide ester of, e.g., bis[2,5-dimethyl-3-(2-hydroxy-5-methylbenzyl)-4-hydroxyphenyl]methane and/or 2,4-bis[4-hydroxy-3-(4-hydroxybenzyl)-5-methylbenzyl]-6-cyclohexylphenol, and (C) 4,4′-bis(diethylamino)benzophenone. The composition exhibits high sensitivity and definition and improved focal depth range properties and underexposure margin.
摘要翻译： 正型光致抗蚀剂组合物包括（A）碱溶性树脂，（B）例如双[2,5-二甲基-3-（2-羟基-5-甲基苄基）-4-羟基苯基]甲烷的醌二叠氮化物酯和 /或2,4-双[4-羟基-3-（4-羟基苄基）-5-甲基苄基] -6-环己基苯酚和（C）4,4'-双（二乙基氨基）二苯甲酮。 该组合物具有高灵敏度和清晰度，并且改善了焦深范围特性和曝光不足。
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公开(公告)号：US06225030B1
公开(公告)日：2001-05-01
申请号：US09260051
申请日：1999-03-02
IPC分类号： G03F740
CPC分类号： G03F7/425
摘要： A post-ashing treating method for substrates comprising the following steps: forming a photoresist layer on a substrate having metallic layer(s) thereon; selectively exposing the photoresist layer to light; developing the light-exposed photoresist layer to provide a photoresist pattern; etching the substrate through the photoresist pattern as a mask pattern to form a metallic wired pattern; ashing the photoresist pattern; and after the completion of the ashing, bringing the substrate into contact with a treating liquid composition to thereby treat the substrate; characterized in that said treating liquid composition is one which comprises: (a) 0.5-10 wt % of a lower alkyl quaternary ammonium salt; (b) 1-50 wt % of a polyhydric alcohol; and (c) water as the balance. The post-ashing treating method for substrates provided by the present invention makes it possible to efficiently remove residues formed by dry etching followed by ashing under strict conditions and to achieve favorable corrosion-inhibiting effects on the substrates.
摘要翻译： 一种用于基板的后灰化处理方法，包括以下步骤：在其上具有金属层的基板上形成光致抗蚀剂层; 选择性地将光致抗蚀剂层曝光; 显影曝光的光致抗蚀剂层以提供光致抗蚀剂图案; 通过光致抗蚀剂图案蚀刻基板作为掩模图案以形成金属布线图案; 灰化光致抗蚀剂图案; 并且在灰化完成之后，使基板与处理液体组合物接触，从而处理基板; 其特征在于所述处理液体组合物是包含：（a）0.5-10重量％的低级烷基季铵盐的组合物; （b）1-50重量％的多元醇; 和（c）水作为平衡。 通过本发明提供的基板的后灰化处理方法，可以有效地除去由干蚀刻形成的残留物，在严格条件下进行灰化，并对基板实现良好的腐蚀抑制效果。
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45.发明授权公开(公告)号：US06177226B1
公开(公告)日：2001-01-23
申请号：US09069074
申请日：1998-04-29
申请人： Masaki Kurihara , Satoshi Niikura , Miki Kobayashi , Kousuke Doi , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Masaki Kurihara , Satoshi Niikura , Miki Kobayashi , Kousuke Doi , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03F7023
CPC分类号： G03F7/022 , G03F7/0226
摘要： A positive photoresist composition for forming a contact hole which comprises (A) an alkali-soluble resin; (B) a naphthoquinonediazide group-containing compound; and (C) a solvent, wherein the ingredient (B) comprises: at least one naphthoquinonediazidesulfonic ester of a polyphenol compound, where said polyphenol compound is composed of from 4 to 6 benzene rings each bonding via a methylene chain, each of the methylene chains is in a meta position to other methylene chains, and each of the benzene rings has a hydroxyl group is provided. According to the present invention, a positive photoresist composition and a process for forming a contact hole can be provided each of which gives a contact hole pattern image in exact accordance with a mask pattern without dimple formation, in the contact hole forming technologies using the phaseshift method.
摘要翻译： 一种用于形成接触孔的正性光致抗蚀剂组合物，其包含（A）碱溶性树脂; （B）含萘醌二叠氮化物基团的化合物; 和（C）溶剂，其中成分（B）包括：多酚化合物的至少一种萘醌二叠氮化物磺酸酯，其中所述多酚化合物由4-6个苯环组成，各自通过亚甲基键键合，每个亚甲基链 位于其他亚甲基链的间位，并且提供每个苯环具有羟基。 根据本发明，可以提供正性光致抗蚀剂组合物和用于形成接触孔的方法，其中每一种都在使用相移的接触孔形成技术中精确地根据没有凹坑形成的掩模图案给出接触孔图案图像 方法。
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公开(公告)号：US06171749B2
公开(公告)日：2001-01-09
申请号：US09239798
申请日：1999-01-29
申请人： Toshikazu Tachikawa , Fumitake Kaneko , Satoshi Fujimura , Miwa Miyairi , Hiroshi Komano , Toshimasa Nakayama
发明人： Toshikazu Tachikawa , Fumitake Kaneko , Satoshi Fujimura , Miwa Miyairi , Hiroshi Komano , Toshimasa Nakayama
IPC分类号： G03F7004
CPC分类号： G03F7/0045 , G03F7/038 , Y10S430/106
摘要： Disclosed is a novel negative-working chemical-amplification photoresist composition comprising, as the essential ingredients, (A) an alkali-soluble resin, (B) a radiation-sensitive acid-generating agent and (C) a cross-linking agent. Characteristically, the component (B) is a combination of a halogenoacid-generating compound and a bis(alkylsulfonyl) diazomethane compound in a specified proportion. By virtue of this unique formulation of the composition, the photoresist composition can give a patterned resist layer having excellently orthogonal cross sectional profile in a high photosensitivity.
摘要翻译： 公开了一种新型负性化学增幅光致抗蚀剂组合物，其包含（A）碱溶性树脂，（B）辐射敏感性产酸剂和（C）交联剂作为必要成分。 特征地，组分（B）是指定比例的产生卤代酸的化合物和双（烷基磺酰基）重氮甲烷化合物的组合。 由于该组合物的这种独特配方，光致抗蚀剂组合物可以在高感光度下得到具有优异正交横截面轮廓的图案化抗蚀剂层。
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公开(公告)号：US6159652A
公开(公告)日：2000-12-12
申请号：US20408
申请日：1998-02-09
申请人： Mitsuru Sato , Kazuyuki Nitta , Akiyoshi Yamazaki , Etsuko Iguchi , Yoshika Sakai , Kazufumi Sato , Toshimasa Nakayama
发明人： Mitsuru Sato , Kazuyuki Nitta , Akiyoshi Yamazaki , Etsuko Iguchi , Yoshika Sakai , Kazufumi Sato , Toshimasa Nakayama
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/106
摘要： Disclosed is an improved, chemically-amplifying positive resist composition for radiations, especially UV rays, deep-UV rays, excimer laser beams, X-rays, electron beams. The composition comprises (A) a resin component whose solubility in an alkaline aqueous solution is increased by the action of acids, (B) a compound which generates an acid when exposed to radiations, and (A) a resin component, (B) an acid-generating agent and (C) an organic carboxylic acid compound, in which said resin component (A) is a mixture comprising (a) a polyhydroxystyrene where from 10 to 60 mol % of the hydroxyl groups have been substituted by residues of a general formula (I): ##STR1## wherein R.sup.1 represents a hydrogen atom or a methyl group, R.sup.2 represents a methyl group or an ethyl group, and R.sup.3 represents a lower alkyl group having 1 to 4 carbon atoms;and (b) a polyhydroxystyrene where from 10 to 60 mol % of the hydroxyl groups have been substituted by tert-butoxy-carbonyloxy groups. The composition has a high sensitivity, a high resolution, high heat resistance, good width characteristic in focus depth and good post-exposure storage stability, has good storage stability as a resist solution, and gives resist patterns with good profiles, without depending on the substrate to which it is applied. The composition is useful for forming fine patterns in producing ultra-LSIs.
摘要翻译： 公开了用于辐射，特别是紫外线，深紫外线，准分子激光束，X射线，电子束的改进的化学增幅正性抗蚀剂组合物。 该组合物包含（A）通过酸的作用在碱性水溶液中的溶解度增加的树脂成分，（B）暴露于辐射时产生酸的化合物，（A）树脂成分，（B） 酸性发生剂和（C）有机羧酸化合物，其中所述树脂组分（A）是包含（a）多羟基苯乙烯的混合物，其中10至60mol％的羟基已被一般的残基取代 式（I）：其中R1表示氢原子或甲基，R2表示甲基或乙基，R3表示碳原子数1〜4的低级烷基。 和（b）聚羟基苯乙烯，其中10至60摩尔％的羟基已被叔丁氧基 - 羰基氧基取代。 该组合物具有高灵敏度，高分辨率，高耐热性，聚焦深度的良好宽度特性和良好的曝光后储存稳定性，作为抗蚀剂溶液具有良好的储存稳定性，并且具有良好外形的抗蚀剂图案，而不依赖于 底物。 该组合物可用于在制造超LSI时形成精细图案。
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公开(公告)号：US6083665A
公开(公告)日：2000-07-04
申请号：US273262
申请日：1999-03-22
申请人： Mitsuru Sato , Katsumi Oomori , Etsuko Iguchi , Kiyoshi Ishikawa , Fumitake Kaneko , Toshimasa Nakayama
发明人： Mitsuru Sato , Katsumi Oomori , Etsuko Iguchi , Kiyoshi Ishikawa , Fumitake Kaneko , Toshimasa Nakayama
IPC分类号： G03F7/004 , G03F7/038 , G03F7/09 , G03F7/11 , H01L21/027 , H01L21/302 , H01L21/3065 , G03F7/40
CPC分类号： G03F7/091 , G03F7/0045 , Y10S430/12 , Y10S430/122
摘要： A proposal is made for the photolithographic formation of a patterned resist layer on a substrate without the troubles due to reflection of the exposure light on the substrate surface. Thus, patterning is conducted on a photo-resist laminate comprising (a) a substrate; (b) a specific anti-reflection coating layer formed on one surface of the substrate; and (c) a photoresist layer formed on the anti-reflection coating layer from a specific negative-working chemical-sensitization photoresist composition. The patterning procedure comprises the steps of: (A) exposing, pattern-wise to actinic rays, the photoresist layer of the photoresist laminate; (B) subjecting the photoresist layer to a heat treatment; (C) subjecting the photoresist layer to a development treatment to dissolve away the photoresist layer in the areas unexposed to actinic rays in step (A) so as to expose bare the anti-reflection coating layer in the areas unexposed to the actinic rays leaving a patterned resist layer in the areas exposed to the actinic rays; and (D) removing the pattern-wise exposed anti-reflection coating layer by dry etching with the patterned photoresist layer as a mask.
摘要翻译： 提出了在基板上的图案化抗蚀剂层的光刻形成，而不会由于基板表面上的曝光光的反射而引起的问题。 因此，在包含（a）基材的光致抗蚀剂层压体上进行图案化; （b）形成在所述基板的一个表面上的特定抗反射涂层; 和（c）由特定的负性化学增感光致抗蚀剂组合物形成在抗反射涂层上的光致抗蚀剂层。 图案化步骤包括以下步骤：（A）以光致抗蚀剂层压板的光致抗蚀剂层将光致抗蚀剂层以图形方式曝光于光化射线; （B）对光致抗蚀剂层进行热处理; （C）在步骤（A）中对光致抗蚀剂层进行显影处理以将光致抗蚀剂层溶解在未暴露于光化射线的区域中，以便露出未暴露于光化离子的区域中的防反射涂层 在暴露于光化射线的区域中的图案化抗蚀剂层; 和（D）通过用图案化的光致抗蚀剂层作为掩模的干蚀刻去除图案化的曝光的抗反射涂层。
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公开(公告)号：US6071673A
公开(公告)日：2000-06-06
申请号：US138073
申请日：1998-08-21
CPC分类号： G03F7/091 , Y10S430/151
摘要： The present invention provides a method for the formation of a pattern, which comprises applying an antireflective coating film-forming composition solution comprising (A) a compound which undergoes crosslinking reaction when irradiated with actinic rays and (B) a dye to a substrate to form a coating film thereon, entirely irradiating the coating film with actinic rays to form an antireflective coating film, applying a resist solution to the antireflective coating film, drying the coated material to form a resist layer, and then subjecting the coated material to lithographic treatment to form a resist pattern on the antireflective coating film. The method enables the formation of a resist pattern having an excellent dimensional accuracy and section shape without causing the formation of an intermixed layer between the resist composition and antireflective coating film.
摘要翻译： 本发明提供了形成图案的方法，其包括施加抗反射涂膜组合物溶液，其包含（A）当用光化射线照射时经历交联反应的化合物和（B）染料至基底以形成 其上涂覆膜，用光化射线全面照射涂膜以形成抗反射涂膜，将抗蚀剂溶液施加到抗反射涂膜上，干燥涂覆的材料以形成抗蚀剂层，然后将涂覆的材料进行平版印刷处理 在抗反射涂膜上形成抗蚀剂图案。 该方法能够形成具有优异的尺寸精度和截面形状的抗蚀剂图案，而不会在抗蚀剂组合物和抗反射涂膜之间形成混合层。
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公开(公告)号：US6030741A
公开(公告)日：2000-02-29
申请号：US919368
申请日：1997-08-28
CPC分类号： G03F7/0048 , G03F7/0226
摘要： The present invention provides a positive resist composition and method capable of achieving a resist pattern whose photosensitivity is less variable relative to its thickness, which exhibits small thickness reduction even when the pattern is fine, is capable of coping with irregularities in the exposure value since it has a wide focal-depth range, and exhibits reduced size-deviation from the mask size. The positive resist composition comprises (A) an alkali-soluble resin, (B) a quinonediazide-group-containing compound, and (C) an organic solvent, wherein the ingredient (C) is a mixture solvent containing (i) 2-heptanone, (ii) ethyl lactate, and (iii) a high-boiling organic solvent having a boiling point of 200 to 350.degree. C. The above-described resist pattern can be formed by using the positive resist composition.
摘要翻译： 本发明提供一种能够实现光敏性相对于其厚度变化较小的抗蚀剂图案的正型抗蚀剂组合物和方法，即使图案细小也能显示小的厚度减小，因此可以应对曝光值的不规则性 具有宽的焦深范围，并且显示出与面罩尺寸的尺寸偏差的减小。 正型抗蚀剂组合物包含（A）碱溶性树脂，（B）含醌二叠氮化物基团的化合物和（C）有机溶剂，其中成分（C）是含有（i）2-庚酮 ，（ii）乳酸乙酯，和（iii）沸点为200〜350℃的高沸点有机溶剂。上述抗蚀剂图案可以通过使用正性抗蚀剂组合物形成。
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