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206 条记录 (耗时 0.038 秒)

    Low voltage-drop electrical contact for gallium (aluminum, indium) nitride
    41.
    发明授权
    Low voltage-drop electrical contact for gallium (aluminum, indium) nitride 失效
    镓（铝，铟）氮化物的低压降电接触

    公开(公告)号：US06100586A

    公开(公告)日：2000-08-08

    申请号：US862461

    申请日：1997-05-23

    申请人： Yong Chen ,  Long Yang ,  Shih-Yuan Wang ,  Richard P. Schneider

    发明人： Yong Chen ,  Long Yang ,  Shih-Yuan Wang ,  Richard P. Schneider

    IPC分类号： H01S5/00 ,  H01L29/45 ,  H01L33/10 ,  H01L33/32 ,  H01L33/40 ,  H01S5/042 ,  H01S5/323 ,  H01L21/28

    CPC分类号： H01L33/40 ,  H01L29/452 ,  H01L33/105 ,  H01L33/32 ,  H01S5/0421 ,  H01S5/32341

    摘要： An electrical contact that comprises a layer of a p-type gallium nitride material, a metal layer, and an intermediate layer of a material different from the gallium nitride material and the metal layer. The intermediate layer is sandwiched between the layer of p-type gallium nitride material and the metal layer. The material of the intermediate layer may be a Group III-V semiconductor that has high band-gap energy, lower than that of the p-type gallium nitride material. The intermediate layer may alternatively include layers of different Group III-V semiconductors. The layers of the different Group III-V semiconductors are arranged in order of their band-gap energies, with the Group III-V semiconductor having the highest band-gap energy next to the layer of the p-type gallium nitride material, and the Group III-V semiconductor having the lowest band-gap energy next to the metal layer. As a further alternative, the material of the intermediate layer may be a metal nitride. As a yet further alternative, the material of the intermediate layer may be a gallium nitride material in which a percentage of the nitrogen atoms are replaced by a mole fraction x of atoms of at least one other Group V element. The value of x is close to zero next to the p-type gallium nitride material, and is substantially greater next to the metal layer. This intermediate layer may alternatively be sandwiched between a layer of n-type gallium nitride material and a metal layer to make an n-contact.

    摘要翻译： 包括p型氮化镓材料层，金属层和不同于氮化镓材料和金属层的材料的中间层的电接触。 中间层夹在p型氮化镓材料层和金属层之间。 中间层的材料可以是具有比p型氮化镓材料低的带隙能量的III-V族半导体。 中间层可以替代地包括不同III-V族不同的半导体层。 不同的III-V族半导体层按照它们的带隙能量的顺序排列，III-V族半导体在p型氮化镓材料层的旁边具有最高的带隙能量， 具有与金属层相邻的最小带隙能量的III-V族半导体。 作为另外的替代方案，中间层的材料可以是金属氮化物。 作为另外的替代方案，中间层的材料可以是氮化镓材料，其中氮原子的百分比被至少一个其它V族元素的原子的摩尔分数x代替。 x值接近于p型氮化镓材料，并且在金属层附近大大地增加。 该中间层可替代地夹在n型氮化镓材料层和金属层之间以进行n接触。

    Seed starter vase
    42.
    外观设计
    Seed starter vase 有权

    公开(公告)号：USD1002431S1

    公开(公告)日：2023-10-24

    申请号：US29839324

    申请日：2022-05-19

    申请人： Yong Chen

    设计人： Yong Chen

    摘要： FIG. 1 is a perspective view of the seed starter vase showing my new design;
    FIG. 2 is a perspective view thereof from another angle;
    FIG. 3 is a front elevational view thereof;
    FIG. 4 is a rear elevational view thereof;
    FIG. 5 is a left side elevational view thereof;
    FIG. 6 is a right side elevational view thereof;
    FIG. 7 is a top plan view thereof; and,
    FIG. 8 is a bottom plan view thereof.

    Gymnasium mat
    46.
    外观设计
    Gymnasium mat 有权

    公开(公告)号：USD887506S1

    公开(公告)日：2020-06-16

    申请号：US29674192

    申请日：2018-12-20

    申请人： Yong Chen

    设计人： Yong Chen

    Timing-aware data prefetching for microprocessors
    48.
    发明授权
    Timing-aware data prefetching for microprocessors 有权
    用于微处理器的定时感知数据预取

    公开(公告)号：US08856452B2

    公开(公告)日：2014-10-07

    申请号：US13149425

    申请日：2011-05-31

    申请人： Xian-He Sun ,  Yong Chen ,  Huaiyu Zhu

    发明人： Xian-He Sun ,  Yong Chen ,  Huaiyu Zhu

    IPC分类号： G06F12/02 ,  G06F12/08

    CPC分类号： G06F12/0862 ,  G06F2212/6026

    摘要： A method and apparatus for prefetching data from memory for a multicore data processor. A prefetcher issues a plurality of requests to prefetch data from a memory device to a memory cache. Consecutive cache misses are recorded in response to at least two of the plurality of requests. A time between the cache misses is determined and a timing of a further request to prefetch data from the memory device to the memory cache is altered as a function of the determined time between the two cache misses.

    摘要翻译： 一种用于从多内存数据处理器的存储器预取数据的方法和装置。 预取器发出多个请求以将数据从存储器设备预取到存储器高速缓存。 响应于多个请求中的至少两个来记录连续的高速缓存未命中。 确定高速缓存未命中之间的时间，并且根据确定的两个高速缓存未命中的时间来改变从存储器设备向存储器高速缓存预取数据的进一步请求的定时。

    ORTHODONTIC APPLIANCE WITH SNAP FITTED, NON-SLIDING ARCHWIRE
    49.
    发明申请
    ORTHODONTIC APPLIANCE WITH SNAP FITTED, NON-SLIDING ARCHWIRE 有权
    具有SNAP FITTED，非滑动式ARCHWIRE的正畸器具

    公开(公告)号：US20140120491A1

    公开(公告)日：2014-05-01

    申请号：US14067690

    申请日：2013-10-30

    申请人： Robert Lee ,  Hongsheng Tong ,  Philong John Pham ,  Yong Chen ,  Behrokh Khoshnevis

    发明人： Behrokh Khoshnevis ,  Hongsheng Tong ,  Yong Chen ,  Philong John Pham ,  Robert Lee

    IPC分类号： A61C7/30

    CPC分类号： A61C7/30 ,  A61C7/125 ,  A61C7/20 ,  A61C7/28

    摘要： An orthodontic appliance may include an archwire and multiple orthodontic brackets. The archwire may fit within a human mouth and contain multiple male connectors. Each orthodontic bracket may have a configuration that facilitates attaching the orthodontic bracket to a single tooth. Each orthodontic bracket may allow one of the male connectors to be locked into the orthodontic bracket with a snapping action. The male connector may be unable to slide with respect to the orthodontic bracket after being locked in the orthodontic bracket. A manual unlocking action may allow the male connector to disengage from the orthodontic bracket.

    摘要翻译： 正畸器具可以包括弓丝和多个正畸托。 弓丝可以装配在人的嘴中并且包含多个公连接器。 每个正畸托架可以具有便于将正牙托架附接到单个牙齿的构造。 每个正畸托架可以允许一个公连接器以卡扣动作锁定到正畸托架中。 在插入正畸托架后，阳连接器可能无法相对于正畸托架滑动。 手动解锁动作可以允许公连接器脱离正畸托架。

    FLUIDIC IN-LINE PARTICLE IMMOBILIZATION AND COLLECTION SYSTEMS AND METHODS FOR USING THE SAME
    50.
    发明申请
    FLUIDIC IN-LINE PARTICLE IMMOBILIZATION AND COLLECTION SYSTEMS AND METHODS FOR USING THE SAME 审中-公开
    流体在线颗粒固定和收集系统及其使用方法

    公开(公告)号：US20140038259A1

    公开(公告)日：2014-02-06

    申请号：US13984016

    申请日：2012-03-13

    申请人： Yong Chen

    发明人： Yong Chen

    IPC分类号： C12N13/00

    CPC分类号： C12N13/00 ,  B03C1/0332 ,  B03C1/0335 ,  B03C1/035 ,  B03C1/288 ,  B03C2201/18 ,  G01N15/1459 ,  G01N2015/1006 ,  G01N2015/149

    摘要： Fluidic sorting systems configured to immobilize, and optionally concentrate and/or analyze, one or more particles within the system are provided. Aspects of the systems include a flow-through chamber and an immobilization component configured to immobilize, preferably reversibly, a particle within the flow-through chamber. Optionally, the systems include an analysis component configured to optically analyze an immobilized particle within the flow-through chamber. In certain aspects, the systems are configured to collect one or more particles from the flow-through chamber for subsequent analysis, experimentation, and/or use. Also provided are methods, components and kits for reversibly immobilizing, and optionally analyzing, one or more particles within a fluidic sorting system.

    摘要翻译： 提供了配置成固定并且可选地浓缩和/或分析系统内的一种或多种颗粒的流体分选系统。 系统的方面包括流通室和固定部件，其被配置为固定，优选地可逆地在流通室内的颗粒。 可选地，所述系统包括配置成光学分析所述流通室内的固定化颗粒的分析组件。 在某些方面，系统被配置为从流通室收集一个或多个颗粒，用于随后的分析，实验和/或使用。 还提供了用于可逆地固定和任选地分析流体分选系统内的一种或多种颗粒的方法，组件和试剂盒。