摘要:
A method of reduction treatment of metal oxides characterized by using as a material a powder containing metal oxides and containing alkali metals and halogen elements and further, in accordance with need, carbon, mixing the material with water to produce a slurry, then dehydrating this and charging the dehydrated material, mixed with another material in accordance with need, into a rotary hearth type reduction furnace for reduction.
摘要:
A magnetoresistive element includes a stacked structure including a fixed layer having a fixed direction of magnetization, a recording layer having a variable direction of magnetization, and a nonmagnetic layer sandwiched between the fixed layer and the recording layer, a first protective film covering a circumferential surface of the stacked structure, and made of silicon nitride, and a second protective film covering a circumferential surface of the first protective film, and made of silicon nitride. A hydrogen content in the first protective film is not more than 4 at %, and a hydrogen content in the second protective film is not less than 6 at %.
摘要:
A semiconductor apparatus comprises: a semiconductor substrate; and a lateral type MIS transistor disposed on a surface part of the semiconductor substrate. The lateral type MIS transistor includes: a line coupled with a gate of the lateral type MIS transistor; a polycrystalline silicon resistor that is provided in the line, and that has a conductivity type opposite to a drain of the lateral type MIS transistor; and an insulating layer through which a drain voltage of the lateral type MIS transistor is applied to the polycrystalline silicon resistor.
摘要:
A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a condition state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector.
摘要:
A semiconductor device includes: a semiconductor substrate; a separation region in the substrate; an embedded layer; a channel forming region; a source region; a drain region; a first electrode for the source region; a second electrode for the channel forming region; a third electrode for the drain region; a trench penetrating the channel forming region between the source region and the drain region; a trench gate electrode in the trench; an offset layer on a portion to be a current path provided by the trench gate electrode; and an electric field relaxation layer under the channel forming region and the offset layer connected to the channel forming region and covering a bottom of the trench.
摘要:
A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a condition state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector.
摘要:
A connector includes two housings coupled with each other to hold a cable therebetween. One of the housings includes a cable receiving portion for receiving the cable, a restricting portion adjacent to the cable receiving portion, a first wall portion formed outside the restricting portion and defining a space between the first wall portion and the restricting portion, and a first engaging portion inwardly protruding from the first wall portion. Another of the housings includes a cable pressing portion for pressing the cable towards the cable receiving portion and the restricting portion, and a second wall portion formed adjacent to the cable pressing portion and inserted into the space. The second wall portion has a second engaging portion extending outward from the second wall portion. The first and the second engaging potions are engaged with each other to prevent the housings from separating from each other.
摘要:
The semiconductor output circuit of the invention has an insulated gate transistor including a first terminal, a second terminal and a gate terminal, a conductive state of the insulated gate transistor being controlled by a drive circuit connected to the gate terminal, a capacitive element and a first resistor connected in series between the second terminal and the gate terminal, and a second resistor connected between the gate terminal and the first terminal. The insulated gate transistor has a cell area formed on a semiconductor substrate, in which a plurality of unit cells each defining a unit transistor connected between the first and second terminals are laid out. The second resistor has such a resistance that all of the unit transistors defined by the unit cells are turned on uniformly when electrostatic discharge is applied to the first or second terminal.
摘要:
An apparatus is provided for controlling a graphic equalizer which is implemented by digital filters, each being assignable to a frequency band for regulating a level of the frequency band. In the apparatus, a set of control devices are provided in correspondence to respective frequency bands, each control device being operable to specify the level of the corresponding frequency band to either of a reference level or other level than the reference level. An assignment section operates when a number of the digital filters is less than a total number of the frequency bands, for assigning the digital filters to the frequency bands which are specified with the levels other than the reference level. A control section controls remaining digital filters which are not assigned to any of the frequency bands in a through state. A disabling section operates when the assignment section assigns all of the digital filters to the frequency bands which are specified with levels other than the reference level, for disabling operation of a control device which currently specifies the reference level.
摘要:
A method of reduction treatment of metal oxides characterized by using as a material a powder containing metal oxides and containing alkali metals and halogen elements and further, in accordance with need, carbon, mixing said material with water to produce a slurry, then dehydrating this and charging the dehydrated material, mixed with another material in accordance with need, into a rotary hearth type reduction furnace for reduction.