公开(公告)号：US6114205A

公开(公告)日：2000-09-05

申请号：US183040

申请日：1998-10-30

申请人： Kiyoshi Mori

发明人： Kiyoshi Mori

IPC分类号： H01L21/336 ,  H01L29/78

CPC分类号： H01L29/66666 ,  H01L29/7827

摘要： A vertical MOS transistor includes an epitaxially formed channel between its lower source/drain region and upper source/drain region, with a gate electrode in a trench hat extends vertically through those regions. A process for forming the vertical MOS transistor implants the substrate to provide the lower source/drain region, then forms an epitaxial layer that provides the channel over the previously formed lower source/drain region. Then, the upper source/drain region is implanted above the lower source/drain A region and epitaxial channel layer, followed by formation of a vertical trench and polysilicon gate. Forming the epitaxial layer over a previously implanted lower source/drain region allows independent control of the resistivity of the lower source/drain region, such that it can have low resistivity, facilitating device symmetry. Also, the epitaxial channel layer has improved doping uniformity over diffusion type channel region, lowering channel length and increasing performance and yield. Finally, the source/drain regions may incorporate two separate dopants to provide an extended region that further minimizes the channel length while providing higher punch through voltage levels and retaining low resistivity.

摘要翻译： 垂直MOS晶体管包括在其下源极/漏极区域和上部源极/漏极区域之间的外延形成的沟道，沟槽帽中的栅极电极垂直延伸穿过那些区域。 用于形成垂直MOS晶体管的工艺将衬底植入以提供下部源极/漏极区域，然后形成在先前形成的下部源极/漏极区域上提供沟道的外延层。 然后，将上源极/漏极区域注入到下部源极/漏极A区域和外延沟道层的上方，随后形成垂直沟槽和多晶硅栅极。 在先前植入的下部源极/漏极区域上形成外延层允许独立控制下部源极/漏极区域的电阻率，使得其可以具有低电阻率，有助于器件对称性。 此外，外延沟道层在扩散型沟道区上具有改善的掺杂均匀性，降低沟道长度并提高性能和产率。 最后，源极/漏极区域可以包含两个单独的掺杂剂以提供扩展区域，其进一步使通道长度最小化，同时提供更高的穿通电压电平并保持低电阻率。

公开(公告)号：US6107106A

公开(公告)日：2000-08-22

申请号：US19296

申请日：1998-02-05

申请人： Kiyoshi Mori

发明人： Kiyoshi Mori

IPC分类号： H01L21/265 ,  H01L21/66 ,  G21K5/00

CPC分类号： H01L22/20 ,  H01L21/2652

摘要： A method of localized control of integrated circuit parameters according to the present invention is used to adjust a the threshold voltage of an integrated circuit by irradiating an inoperable area with a focused ion beam such that the determination of the correct threshold voltage is facilitated without having to refabricate the integrated circuit in its entirety.

摘要翻译： 根据本发明的集成电路参数的局部控制的方法用于通过用聚焦离子束照射不可操作区域来调整集成电路的阈值电压，使得便于确定正确的阈值电压而不必 整体整合集成电路。

公开(公告)号：US6069060A

公开(公告)日：2000-05-30

申请号：US976597

申请日：1997-11-24

申请人： Masami Matsumoto ,  Junichi Tsuchimoto ,  Kiyoshi Mori

发明人： Masami Matsumoto ,  Junichi Tsuchimoto ,  Kiyoshi Mori

IPC分类号： H01L21/28 ,  H01L21/768 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/04 ,  H01L27/108

CPC分类号： H01L27/10852

摘要： It is an object to obtain a semiconductor device free from a necessity of stacking a contact hole and a lower electrode, thus preventing occurrence of an error in stacking and enabling the capacitor to be formed precisely. Amorphous silicon 10b is deposited on a interlayer insulating film 9 including the inside portion of the contact hole 9a, and then a resist 14 is applied to the amorphous silicon 10b. Then, a mask for photolithography which has been used to form the contact hole 9a is used to perform a photolithography process to form the resist 14 to have a required shape. Then, implantation of phosphorus ions is performed such that the resist 14 is used as a mask 14a for preventing implantation of ions. Then, the amorphous silicon 10b is subjected to heat treatment to partially single crystallize the amorphous silicon 10b so that single crystal silicon 10c is grown. The difference in the etching rate between the amorphous silicon 10b and the single crystal silicon 10c is used to selectively remove the amorphous silicon 10b by using dry etching technique so that a storage node 10 is formed.

摘要翻译： 本发明的目的是获得不需要堆叠接触孔和下电极的半导体器件，从而防止堆叠发生错误，并且能够精确地形成电容器。 非晶硅10b沉积在包括接触孔9a的内部的层间绝缘膜9上，然后将抗蚀剂14施加到非晶硅10b。 然后，使用已经用于形成接触孔9a的用于光刻的掩模来进行光刻工艺以形成具有所需形状的抗蚀剂14。 然后，进行磷离子的注入，使得抗蚀剂14用作防止离子注入的掩模14a。 然后，对非晶硅10b进行热处理，以使非晶硅10b部分单晶结晶，从而生长单晶硅10c。 使用非晶硅10b和单晶硅10c之间的蚀刻速率的差异，通过使用干蚀刻技术来选择性地去除非晶硅10b，从而形成存储节点10。

公开(公告)号：US5819796A

公开(公告)日：1998-10-13

申请号：US622165

申请日：1996-03-27

申请人： Masafumi Kunimitsu ,  Kiyoshi Mori ,  Tomokazu Muraguchi ,  Yoichiro Ando

发明人： Masafumi Kunimitsu ,  Kiyoshi Mori ,  Tomokazu Muraguchi ,  Yoichiro Ando

IPC分类号： B60K15/077 ,  B60K15/035 ,  B60K15/04 ,  F02M37/00 ,  F02M39/00

CPC分类号： B60K15/03519 ,  B60K15/04 ,  B60K15/03504 ,  Y10T137/86324

摘要： The fuel storage system includes a control valve having a valve body which is movable along the inner circumferential wall surface of a filler pipe and which defines a passage isolated from the inner space of the filler pipe. A fuel tank and a canister communicate with each other via a main vapor line. When a fuel cap is attached to the filler port of the filler pipe, the valve body of the control valve is pushed by the fuel cap to be shifted away from the filler port, whereby a first sub-vapor line extending between the fuel tank and the control valve via the passage defined by the valve body is communicated to a second sub-vapor line extending between the control valve and the middle part of the main vapor line, permitting evaporative fuel gas to be introduced from the fuel tank into the canister. When a feed nozzle is inserted into the filler pipe to open a lid disposed therein, the valve body is shifted toward the filler port to allow the second sub-vapor line to communicate to the inner space of the filler pipe, to permit evaporative fuel gas to be introduced from the fuel tank into the filler pipe, preventing inflow of the outside air through the filler port attributed to drop in the internal pressure of the filler pipe, and generation of fresh evaporative fuel gas. Lowering in the refueling performance and over-refueling can be also prevented.

摘要翻译： 燃料储存系统包括具有阀体的控制阀，该阀体可沿着加注管的内周壁表面移动，并且限定了与填充管的内部空间隔离的通道。 燃料箱和罐通过主蒸汽管线彼此连通。 当燃料盖附接到加油口的加料口时，控制阀的阀体被燃料帽推动以从加料口移开，由此在燃料箱和燃料箱之间延伸的第一副蒸气管线 通过由阀体限定的通道的控制阀连通到在控制阀和主蒸汽管线的中间部分之间延伸的第二副蒸气管线，允许蒸发燃料气体从燃料箱引入罐中。 当将进料喷嘴插入到加注管中以打开设置在其中的盖时，阀体朝向填料口移动，以允许第二副蒸气管线与填料管的内部空间连通，以允许蒸发燃料气体 从燃料箱引入加油管，防止由于加注管的内压下降导致的外部空气通过填料口的流入，以及产生新鲜的蒸发燃料气体。 降低加油性能和过度加油也可以防止。

公开(公告)号：US5141886A

公开(公告)日：1992-08-25

申请号：US656392

申请日：1991-02-19

申请人： Kiyoshi Mori

发明人： Kiyoshi Mori

IPC分类号： H01L27/115

CPC分类号： H01L27/115

摘要： An electrically erasable, programmable, read-only-memory, floating-gate, metal-oxide-semiconductor transistor constructed in a trench extending through layers of P-type and N-type material formed on a semiconductor substrate. The floating-gate transistor is comprised of two source-drain regions, a channel region, a floating gate, a programming gate, and gate-oxide layers and is characterized by a floating-gate to channel capacitance that is small relative to the programming-gate to floating-gate capacitance, thereby allowing charging of the floating gate using programming and erasing voltages of less magnitude than might otherwise be necessary.

摘要翻译： 该电可擦除可编程的只读存储器，浮栅，金属氧化物半导体晶体管构造在延伸穿过形成在半导体衬底上的P型和N型材料层的沟槽中。 浮栅晶体管由两个源极 - 漏极区，沟道区，浮置栅，编程栅和栅氧化物层组成，其特征在于浮栅对沟道电容相对于编程 - 栅极到浮置栅极电容，从而允许使用比另外可能需要的程度更小的量的编程和擦除电压对浮置栅极进行充电。

公开(公告)号：US20140080155A1

公开(公告)日：2014-03-20

申请号：US14088638

申请日：2013-11-25

申请人： Jonathan M. Barasch ,  Prasad Devarajan ,  Thomas L. Nickolas ,  Kiyoshi Mori

发明人： Jonathan M. Barasch ,  Prasad Devarajan ,  Thomas L. Nickolas ,  Kiyoshi Mori

IPC分类号： G01N33/68

CPC分类号： G01N33/6893 ,  G01N2800/347 ,  G01N2800/52

摘要： Methods of assessing the ongoing kidney status in a subject afflicted with chronic renal failure (CRF) by detecting the quantity of Neutrophil Gelatinase-Associated Lipocalin (NGAL) in fluid samples over time. NGAL is a small secreted polypeptide that is protease resistant and consequently readily detected in the urine and serum as a result of chronic renal tubule cell injury. Incremental increases in NGAL levels in CRF patients over a prolonged period of time are diagnostic of worsening kidney disease. This increase in NGAL precedes and correlates with other indicators of worsening CRF, such as increased serum creatinine, increased urine protein secretion, and lower glomerular filtration rate (GFR). Proper detection of worsening (or improving, if treatment has been instituted) renal status over time, confirmed by pre- and post-treatment NGAL levels in the patient, can aid in designing and/or maintaining a proper treatment regimen to slow or stop the progression of CRF.

摘要翻译： 通过随时间检测流体样品中嗜中性粒细胞明胶酶相关脂质运载蛋白（NGAL）的量来评估患有慢性肾功能衰竭（CRF）的受试者正在进行的肾脏状态的方法。 NGAL是一种小分泌的多肽，其是蛋白酶抗性的，因此由于慢性肾小管细胞损伤在尿液和血清中容易检测到。 长时间的CRF患者NGAL水平的增加增加是肾脏疾病恶化的诊断。 NGAL的这种增加先于CRF恶化的其他指标，如增加血清肌酐，增加尿蛋白分泌，降低肾小球滤过率（GFR）。 正确检测恶化（或改善，如果治疗已经建立）肾脏状态随着时间的推移，由患者治疗前和治疗后的NGAL水平证实，可以帮助设计和/或维持适当的治疗方案以减慢或停止 CRF进展。

公开(公告)号：US20110143381A1

公开(公告)日：2011-06-16

申请号：US13025272

申请日：2011-02-11

申请人： Jonathan Matthew Barasch ,  Prasad Devarajan ,  Thomas L. Nickolas ,  Kiyoshi Mori

发明人： Jonathan Matthew Barasch ,  Prasad Devarajan ,  Thomas L. Nickolas ,  Kiyoshi Mori

IPC分类号： G01N33/53

CPC分类号： G01N33/6893 ,  G01N2800/347 ,  G01N2800/52

摘要： A method of assessing the ongoing kidney status of a mammal afflicted with or at risk of developing chronic renal injury or disease, including chronic renal failure (CRF) by detecting the quantity of Neutrophil Gelatinase-Associated Lipocalin (NGAL) in urine, serum or plasma samples at discrete time periods, as well as over time. Incremental increases in NGAL levels in CRF patients over a prolonged period of time are diagnostic of worsening kidney disease. This increase in NGAL precedes and correlates with other indicators of worsening chronic renal disease or CRF, such as increased serum creatinine, increased urine protein secretion, and lower glomerular filtration rate (GFR). Proper detection of worsening (or improving, if treatment has been instituted) renal status over time, confirmed by pre- and post-treatment NGAL levels in the patient, can aid the clinical practitioner in designing and/or maintaining a proper treatment regimen to slow or stop the progression of CRF.

摘要翻译： 通过检测尿液，血清或血浆中的嗜中性粒细胞明胶酶相关脂质运载蛋白（NGAL）的量来评估患有慢性肾损伤或疾病的哺乳动物的正在进行的肾脏状态的方法，包括慢性肾功能衰竭（CRF） 样品在离散的时间段，以及随着时间的推移。 长时间的CRF患者NGAL水平的增加增加是肾脏疾病恶化的诊断。 NGAL的这种增加先于慢性肾病或CRF恶化的其他指标，如血清肌酐升高，尿蛋白分泌增加，肾小球滤过率（GFR）降低。 通过患者治疗前和治疗后的NGAL水平证实，正确检测恶化（或改善，如果治疗已经建立）肾脏状态，可以帮助临床从业者设计和/或维持适当的治疗方案缓慢 或停止CRF的进展。

公开(公告)号：US07554298B2

公开(公告)日：2009-06-30

申请号：US11221894

申请日：2005-09-09

申请人： Manabu Okamoto ,  Kiyoshi Mori

发明人： Manabu Okamoto ,  Kiyoshi Mori

IPC分类号： H02J7/00

CPC分类号： H02J7/0052 ,  Y10T307/516

摘要： A charger of the present invention includes a charging transistor and a charging integrated circuit. The charging transistor is series-connected with a secondary battery to supply a charging current to the secondary battery. The charging integrated circuit is incorporated into a package having a higher heat releasability than that of the charging transistor. The charging integrated circuit controls the charging transistor and besides, supplies a charging current to the secondary battery. For this purpose, the charging integrated circuit includes a current source supplying this charging current. The charging current from the current source is supplied to the secondary battery together with the charging current from the charging transistor to charge the secondary battery.

摘要翻译： 本发明的充电器包括充电晶体管和充电集成电路。 充电晶体管与二次电池串联连接以向二次电池提供充电电流。 充电集成电路被并入具有比充电晶体管更高的散热性的封装。 充电集成电路控制充电晶体管，此外，向二次电池供给充电电流。 为此，充电集成电路包括提供该充电电流的电流源。 来自电流源的充电电流与来自充电晶体管的充电电流一起被提供给二次电池以对二次电池充电。

公开(公告)号：US20060176025A1

公开(公告)日：2006-08-10

申请号：US11348237

申请日：2006-02-07

申请人： Kiyoshi Mori ,  Manabu Okamoto

发明人： Kiyoshi Mori ,  Manabu Okamoto

IPC分类号： H02J7/00

CPC分类号： H02J7/0073

摘要： A charging control circuit according to an embodiment of the present invention includes a detecting circuit and a charging transistor control unit for controlling a charging transistor supplying a first current, a current source for supplying a second current, and a current source control unit for controlling the current source. For example, if a secondary battery is charged using an adaptor endowed with a current-limiting function, during a constant-current charging period in which a charging voltage of the secondary battery reaches 3.2 V to 4.2 V, the secondary battery is charged with the first current I1, and during a constant-voltage charging period after the voltage reaches 4.2 V, the secondary battery is charged with the first charging current and the second charging current.

摘要翻译： 根据本发明实施例的充电控制电路包括检测电路和用于控制提供第一电流的充电晶体管的充电晶体管控制单元，用于提供第二电流的电流源和用于控制第一电流的电流源控制单元 当前来源。 例如，如果使用具有限流功能的适配器对二次电池进行充电，则在二次电池的充电电压达到3.2V〜4.2V的恒流充电期间，对二次电池充电 第一电流I 1，并且在电压达到4.2V之后的恒定电压充电时段期间，二次电池充满第一充电电流和第二充电电流。

公开(公告)号：US20050261191A1

公开(公告)日：2005-11-24

申请号：US11123364

申请日：2005-05-06

申请人： Jonathan Barasch ,  Prasad Devarajan ,  Kiyoshi Mori

发明人： Jonathan Barasch ,  Prasad Devarajan ,  Kiyoshi Mori

IPC分类号： A01N1/00 ,  A01N1/02 ,  A61K38/17 ,  A61K38/43 ,  A61K39/02

CPC分类号： G01N33/6893 ,  A01N1/0226 ,  A61K38/1709 ,  A61K39/025 ,  G01N33/74 ,  G01N2333/47 ,  G01N2800/347 ,  A61K2300/00

摘要： Use of neutrophil gelatinase-associated lipocalin (NGAL) as a therapeutic and in a method of treating, reducing, or ameliorating an injury selected from an ischemic injury, an ischemic-reperfusion injury, and a toxin-induced injury, to an organ in a patient. The invention includes administering to the patient NGAL in an amount effective to treat, reduce or ameliorate ischemic, ischemic-reperfusion, or toxin-induced injury to the organ, such as the kidney. A siderophore can be co-administered with the NGAL. The invention also relates to administering a sideophore to enhance a response to secretion of NGAL following an ischemic or toxin-induced injury to an organ in a patient.

摘要翻译： 使用嗜中性粒细胞明胶酶相关脂质运载蛋白（NGAL）作为治疗剂，以及将治疗，减少或改善选自缺血性损伤，缺血再灌注损伤和毒素诱导的损伤的损伤的方法应用于 患者。 本发明包括以有效治疗，减轻或改善对器官（例如肾）的缺血性，缺血再灌注或毒素诱导的损伤的量向患者NGAL施用。 铁载体可与NGAL共同施用。 本发明还涉及在对患者的器官的缺血或毒素诱导的损伤之后施用形象以增强对NGAL分泌的反应。