公开(公告)号：US20090181526A1

公开(公告)日：2009-07-16

申请号：US11887381

申请日：2006-03-30

申请人： Tomohiro Okumura ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Bunji Mizuno ,  Hiroyuki Ito ,  Ichiro Nakayama ,  Cheng-Guo Jin

发明人： Tomohiro Okumura ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Bunji Mizuno ,  Hiroyuki Ito ,  Ichiro Nakayama ,  Cheng-Guo Jin

IPC分类号： H01L21/22 ,  C23C16/00

CPC分类号： H01L21/2236 ,  H01J37/32412 ,  H01J37/3244 ,  H01J37/32834 ,  H01J2237/3342

摘要： An object of the invention is to provide a plasma doping method and a plasma doping apparatus in which uniformity of concentration of impurities introduced into a sample surface are excellent.The plasma doping apparatus of the invention introduces a predetermined mass flow of gas from a gas supply device (2) into a vacuum chamber (1) while discharging the gas through an exhaust port (11) by a turbo-molecular pump (3), which is an exhaust device in order to maintain the vacuum chamber (1) under a predetermined pressure by a pressure adjusting valve (4). A high-frequency power source (5) supplies high-frequency power of 13.56 MHz to a coil (8) disposed in the vicinity of a dielectric window (7) opposite a sample electrode (6) in order to generate an inductively coupled plasma in the vacuum chamber (1). A high-frequency power source (10) for supplying high-frequency power to the sample electrode (6) is provided. A sum of an area of an opening of a gas flow-off port (15) opposed to a center portion of the sample electrode (6) is configured to be smaller than that of an area of an opening of the gas flow-off port (15) opposed to a peripheral portion of the sample electrode (6) in order to improve the uniformity.

摘要翻译： 本发明的目的是提供一种等离子体掺杂方法和等离子体掺杂装置，其中引入样品表面的杂质的浓度均匀。 本发明的等离子体掺杂装置通过涡轮分子泵（3）将气体从气体供给装置（2）引入真空室（1），同时通过排气口排出气体， 其是为了通过压力调节阀（4）将真空室（1）保持在预定压力下的排气装置。 高频电源（5）向布置在与样品电极（6）相对的电介质窗口（7）附近的线圈（8）提供13.56MHz的高频功率，以便产生电感耦合等离子体 真空室（1）。 提供了一种用于向样品电极（6）提供高频电力的高频电源（10）。 与样品电极（6）的中心部分相对的气体流出口（15）的开口面积的总和被构造成小于气体流出口的开口面积的面积 （15）与样品电极（6）的周边部分相对，以提高均匀性。

公开(公告)号：US20090176355A1

公开(公告)日：2009-07-09

申请号：US11887323

申请日：2006-03-29

申请人： Tomohiro Okumura ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Bunji Mizuno ,  Hiroyuki Ito ,  Ichiro Nakayama ,  Cheng-Guo Jin

发明人： Tomohiro Okumura ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Bunji Mizuno ,  Hiroyuki Ito ,  Ichiro Nakayama ,  Cheng-Guo Jin

IPC分类号： H01L21/425 ,  C23C16/513

CPC分类号： H01L21/2236 ,  H01J37/321 ,  H01J37/32412 ,  H01J37/32458 ,  H01J37/32623 ,  H01J37/32633

摘要： An object of the invention is to provide a plasma doping method excellent in the uniformity of concentration of impurities introduced into the surface of a sample and a plasma processing device capable of uniformly performing plasma processing of a sample.In a plasma doping device according to the invention, a vacuum chamber (1) is evacuated with a turbo-molecular pump (3) as an exhaust device via a exhaust port 11 while a predetermined gas is being introduced from a gas supply device (2) in order to maintain the inside of the vacuum chamber (1) to a predetermined pressure with a pressure regulating valve (4). A high-frequency power of 13.56 MHz is supplied by a high-frequency power source (5) to a coil (8) provided in the vicinity of a dielectric window (7) opposed to a sample electrode (6) to generate inductive-coupling plasma in the vacuum chamber (1). A high-frequency power source (10) for supplying a high-frequency power to the sample electrode (6) is provided. Uniformity of processing is enhanced by driving a gate shutter (18) and covering a through gate (16).

摘要翻译： 本发明的目的是提供一种等离子体掺杂方法，该等离子体掺杂方法在引入样品表面的杂质的浓度均匀性和等离子体处理装置中均匀地进行等离子体处理。 在根据本发明的等离子体掺杂装置中，在从气体供给装置（2）引入预定气体的同时，通过排气口11，用作为排气装置的涡轮分子泵（3）将真空室（1）抽真空 ），以便通过压力调节阀（4）将真空室（1）的内部保持在预定压力。 高频电源（5）将13.56MHz的高频功率提供给设置在与样品电极（6）相对的电介质窗口（7）附近的线圈（8），以产生电感耦合 真空室（1）中的等离子体。 提供了用于向样品电极（6）提供高频电力的高频电源（10）。 通过驱动闸门（18）并覆盖通过门（16）来增强处理的均匀性。

公开(公告)号：US20080233723A1

公开(公告)日：2008-09-25

申请号：US12137897

申请日：2008-06-12

申请人： Tomohiro Okumura ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno

发明人： Tomohiro Okumura ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno

IPC分类号： H01L21/265 ,  C23C16/44

CPC分类号： H01L21/26513 ,  H01J37/32091 ,  H01J37/32412 ,  H01L21/2236

摘要： There are provided a plasma doping method and an apparatus which have excellent reproducibility of the concentration of impurities implanted into the surfaces of samples. In a vacuum container, in a state where gas is ejected toward a substrate placed on a sample electrode through gas ejection holes provided in a counter electrode, gas is exhausted from the vacuum container through a turbo molecular pump as an exhaust device, and the inside of the vacuum container is maintained at a predetermined pressure through a pressure adjustment valve, the distance between the counter electrode and the sample electrode is set to be sufficiently small with respect to the area of the counter electrode to prevent plasma from being diffused outward, and capacitive-coupled plasma is generated between the counter electrode and the sample electrode to perform plasma doping. The gas used herein is a gas with a low concentration which contains impurities such as diborane or phosphine.

摘要翻译： 提供了等离子体掺杂方法和装置，其具有优异的再现性，注入到样品表面的杂质浓度。 在真空容器中，在通过设置在对电极中的气体喷出孔朝向设置在试样电极上的基板喷射气体的状态下，通过作为排气装置的涡轮分子泵从真空容器排出气体， 通过压力调节阀将真空容器保持在预定压力，相对电极的面积将对置电极和样品电极之间的距离设定得足够小，以防止等离子体向外扩散，并且 在对电极和样品电极之间产生电容耦合等离子体，以进行等离子体掺杂。 本文使用的气体是含有低浓度的气体，其含有诸如乙硼烷或膦的杂质。

公开(公告)号：US20080067439A1

公开(公告)日：2008-03-20

申请号：US11748607

申请日：2007-05-15

申请人： Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno ,  Tomohiro Okumura

发明人： Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno ,  Tomohiro Okumura

IPC分类号： H01J37/08

CPC分类号： H01L21/2236 ,  C23C14/48 ,  H01J37/32412

摘要： A plasma doping method, even though a plasma doping treatment is repeated, can make a dose from a film to a silicon substrate uniform for each time. The method includes preparing a vacuum chamber having a film containing an impurity formed on an inner wall thereof such that, when the film is attacked by ions in plasma, the amount of an impurity to be doped into the surface of a sample by sputtering is not changed even though the plasma containing the impurity ions is repeatedly generated in the vacuum chamber; placing the sample on the sample electrode; and irradiating the plasma containing the impurity ions so as to implant the impurity ions into the sample, and doping the impurity into the sample by sputtering from the film containing the impurity fixed to the inner wall of the vacuum chamber.

摘要翻译： 即使重复进行等离子体掺杂处理，等离子体掺杂法也可以每次从膜到硅衬底的剂量均匀。 该方法包括制备具有含有形成在其内壁上的杂质的膜的真空室，使得当膜受到等离子体中的离子侵蚀时，通过溅射将待掺杂到样品表面的杂质的量不是 即使在真空室中重复产生含有杂质离子的等离子体，也发生了变化; 将样品放置在样品电极上; 并且照射含有杂质离子的等离子体，以将杂质离子注入到样品中，并通过溅射从固定在真空室内壁上的杂质的薄膜溅射到杂质中。

公开(公告)号：US20100297836A1

公开(公告)日：2010-11-25

申请号：US12808285

申请日：2008-12-11

申请人： Yuichiro Sasaki ,  Katsumi Okashita ,  Bunji Mizuno

发明人： Yuichiro Sasaki ,  Katsumi Okashita ,  Bunji Mizuno

IPC分类号： H01L21/26 ,  H01J37/317

CPC分类号： H01L21/2236 ,  H01J37/32412 ,  H01J37/32449 ,  H01J37/32467 ,  H01J37/3299

摘要： A top plate, disposed on an upper portion of a vacuum container so as to face a substrate-placing area of a sample electrode, is provided with an impurity-containing film that contains an impurity, and is formed on a top plate peripheral edge portion area that is a face exposable to a plasma generated in the vacuum container, and is located on a peripheral edge of a top plate center portion area that faces the center portion of the substrate-placing area.

摘要翻译： 设置在真空容器的上部以与样品电极的基板放置区域相对的顶板设置有含杂质的膜，其含有杂质，并且形成在顶板周缘部 该区域是在真空容器中产生的等离子体可暴露的面，并且位于面向基板放置区域的中心部分的顶板中心部区域的周缘上。

公开(公告)号：US20100015788A1

公开(公告)日：2010-01-21

申请号：US12518392

申请日：2008-09-05

申请人： Yuichiro Sasaki ,  Katsumi Okashita ,  Bunji Mizuno

发明人： Yuichiro Sasaki ,  Katsumi Okashita ,  Bunji Mizuno

IPC分类号： H01L21/265

CPC分类号： H01L21/2236 ,  H01L21/268

摘要： Plasma doping is performed by exposing a support substrate 11 made of a semiconductor to a plasma generated from a mixed gas of boron 51 which is an impurity and hydrogen 52 and helium 53 which are diluents so as to implant the boron 51 into the support substrate 11. Then, a preliminary heating step is performed by heating the support substrate 11 so that doses of the hydrogen 52 and the helium 53 are smaller than that of the boron 51 in the support substrate 11 by utilizing a difference between a thermal diffusion coefficient of the boron 51 in the support substrate 11 and those of the hydrogen 52 and the helium 53. Then, a laser heating step is performed for electrically activating the boron 51 implanted into the support substrate 11 using a laser.

摘要翻译： 通过将由半导体制成的支撑基板11暴露于由作为杂质的硼51和作为稀释剂的氢52和氦53的混合气体产生的等离子体进行等离子体掺杂，以将硼51注入到支撑基板11中 然后，通过加热支撑基板11，通过利用支撑基板11的热扩散系数的差异，通过加热支撑基板11使得氢52和氦53的剂量小于支撑基板11中的硼51的剂量来进行预热加热步骤 支撑基板11中的硼51以及氢52和氦53的硼。然后，使用激光进行激活加入到支撑基板11中的硼51的激光加热步骤。

公开(公告)号：US20090266298A1

公开(公告)日：2009-10-29

申请号：US12430551

申请日：2009-04-27

申请人： Katsumi Okashita ,  Yuichiro Sasaki ,  Bunji Mizuno

发明人： Katsumi Okashita ,  Yuichiro Sasaki ,  Bunji Mizuno

IPC分类号： B05C11/00

CPC分类号： H01J37/32477 ,  H01J37/32412 ,  H01J37/32935 ,  H01J37/3299

摘要： On an upper wall of a vacuum container opposing a sample electrode, a plasma-invasion prevention-and-electron beam introducing hole is installed which is communicated with an electron beam introducing tube, and is used for introducing an electron beam toward a substrate in the vacuum container, as well as for preventing invasion of plasma into the electron beam introducing tube. In this structure, supposing that the Debye length of the plasma is set to λd and that a thickness of the sheath is set to Sd, the electron beam introducing hole has a diameter D satisfying a following equation: D≦2λd+2Sd.

摘要翻译： 在与样品电极相对的真空容器的上壁上，安装有与电子束导入管连通的等离子体侵入防止电子束导入孔，并用于将电子束导向基板的电子束 真空容器，以及用于防止等离子体侵入电子束导入管中。 在该结构中，假设等离子体的德拜长度设定为羔羊，并且将鞘的厚度设定为Sd，则电子束导入孔的直径D满足以下等式：D <= 2lambdad + 2Sd。

公开(公告)号：US08536000B2

公开(公告)日：2013-09-17

申请号：US13185221

申请日：2011-07-18

申请人： Yuichiro Sasaki ,  Keiichi Nakamoto ,  Katsumi Okashita ,  Hisataka Kanada ,  Bunji Mizuno

发明人： Yuichiro Sasaki ,  Keiichi Nakamoto ,  Katsumi Okashita ,  Hisataka Kanada ,  Bunji Mizuno

IPC分类号： H01L21/8238 ,  H01L21/8234 ,  H01L21/336

CPC分类号： H01L29/66803 ,  H01L29/66795 ,  H01L29/7854

摘要： First and second gate insulating films are formed so as to cover at least the upper corner of first and second fin-shaped semiconductor regions. The radius of curvature r1′ of the upper corner of the first fin-shaped semiconductor region located outside the first gate insulating film is greater than the radius of curvature r1 of the upper corner of the first fin-shaped semiconductor region located under the first gate insulating film and is less than or equal to 2×r1. The radius of curvature r2′ of the upper corner of the second fin-shaped semiconductor region located outside the second gate insulating film is greater than the radius of curvature r2 of the upper corner of the second fin-shaped semiconductor region located under the second gate insulating film and is less than or equal to 2×r2.

摘要翻译： 第一和第二栅极绝缘膜形成为至少覆盖第一和第二鳍状半导体区域的上角。 位于第一栅极绝缘膜外侧的第一鳍状半导体区域的上角的曲率半径r1'大于位于第一栅极下方的第一鳍状半导体区域的上角的曲率半径r1 绝缘膜，小于或等于2×r1。 位于第二栅极绝缘膜外侧的第二鳍状半导体区域的上角的曲率半径r2'大于位于第二栅极下方的第二鳍状半导体区域的上角的曲率半径r2 绝缘膜，小于或等于2×r2。

公开(公告)号：US08258585B2

公开(公告)日：2012-09-04

申请号：US12676102

申请日：2009-04-30

申请人： Yuichiro Sasaki ,  Katsumi Okashita ,  Keiichi Nakamoto ,  Bunji Mizuno

发明人： Yuichiro Sasaki ,  Katsumi Okashita ,  Keiichi Nakamoto ,  Bunji Mizuno

IPC分类号： H01L27/088

CPC分类号： H01L29/785 ,  H01L29/66803

摘要： A semiconductor device includes: a fin-type semiconductor region (13) formed on a substrate (11); a gate insulating film (14) formed so as to cover an upper surface and both side surfaces of a predetermined portion of the fin-type semiconductor region (13); a gate electrode (15) formed on the gate insulating film (14); and an impurity region (17) formed on both sides of the gate electrode (15) in the fin-type semiconductor region (13). An impurity blocking portion (15a) for blocking the introduction of impurities is provided adjacent both sides of the gate electrode (15) over an upper surface of the fin-type semiconductor region (13).

摘要翻译： 半导体器件包括：形成在衬底（11）上的鳍状半导体区域（13）; 形成为覆盖所述鳍状半导体区域（13）的预定部分的上表面和两个侧面的栅极绝缘膜（14）; 形成在栅极绝缘膜（14）上的栅电极（15）; 以及形成在鳍式半导体区域（13）中的栅电极（15）的两侧的杂质区域（17）。 在鳍型半导体区域（13）的上表面上，在栅电极（15）的两侧附近设置用于阻止引入杂质的杂质阻挡部（15a）。

公开(公告)号：US08124507B2

公开(公告)日：2012-02-28

申请号：US12937169

申请日：2010-03-04

申请人： Yuichiro Sasaki ,  Katsumi Okashita ,  Bunji Mizuno

发明人： Yuichiro Sasaki ,  Katsumi Okashita ,  Bunji Mizuno

IPC分类号： H01L29/78 ,  H01L21/223

CPC分类号： H01L29/785 ,  H01L29/66795

摘要： A fin-type semiconductor region (103) is formed on a substrate (101), and then a resist pattern (105) is formed on the substrate (101). An impurity is implanted into the fin-type semiconductor region (103) by a plasma doping process using the resist pattern (105) as a mask, and then at least a side of the fin-type semiconductor region (103) is covered with a protective film (107). Thereafter, the resist pattern (105) is removed by cleaning using a chemical solution, and then the impurity implanted into the fin-type semiconductor region (103) is activated by heat treatment.

摘要翻译： 在基板（101）上形成翅片型半导体区域（103），然后在基板（101）上形成抗蚀图案（105）。 通过使用抗蚀剂图案（105）作为掩模的等离子体掺杂工艺将杂质注入到鳍式半导体区域（103）中，然后用鳍状半导体区域（103）的至少一侧覆盖 保护膜（107）。 此后，通过使用化学溶液的清洗除去抗蚀剂图案（105），然后通过热处理激活注入到鳍式半导体区域（103）中的杂质。