公开(公告)号：US20040072386A1

公开(公告)日：2004-04-15

申请号：US10434761

申请日：2003-05-08

Inventor： Yasuyuki Tanabe ,  Katsuyuki Machida ,  Hiromu Ishii ,  Shouji Yagi

IPC: H01L021/00

CPC classification number: B81C1/00182 ,  B81B2201/045

Abstract: A micromachine manufacturing method according to this invention includes at least the movable portion formation step of selectively etching a single-crystal silicon layer by using a movable portion formation mask pattern as a mask, thereby forming on the single-crystal silicon layer a movable portion which is coupled to the surrounding single-crystal silicon layer via a coupling portion on a buried oxide, the movable portion protective film formation step of forming a movable portion protective film on the single-crystal silicon layer so as to cover the movable portion while the movable portion is formed on the buried oxide, and the step of forming a buried protective film which covers the movable portion exposed in the substrate opening and movable portion opening, and the single-crystal silicon layer around the movable portion while the movable portion protective film is formed.

Abstract translation: 根据本发明的微机械制造方法至少包括通过使用可移动部分形成掩模图案作为掩模来选择性地蚀刻单晶硅层的可动部分形成步骤，从而在单晶硅层上形成可移动部分， 通过掩埋氧化物上的耦合部分耦合到周围的单晶硅层，所述可移动部分保护膜形成步骤在单晶硅层上形成可移动部分保护膜以覆盖可动部分，同时可动 形成掩埋氧化物的部分，以及在可动部保护膜为可动部保护膜的情况下，形成覆盖在基板开口部和可动部开口部露出的可动部的埋入保护膜和可动部周围的单晶硅层的工序 形成。

公开(公告)号：US20040061414A1

公开(公告)日：2004-04-01

申请号：US10261087

申请日：2002-09-30

Inventor： Dennis S. Greywall

IPC: H02N001/00

CPC classification number: B81B3/0051 ,  B81B2201/038 ,  B81B2201/045 ,  B81B2203/0118 ,  B81B2203/058 ,  B81C1/00214 ,  G02B26/0841 ,  H02N1/006

Abstract: An integrated device has a spring having at least two split parts that are not in direct electrical contact with each other. The integrated device also has a substrate and a movable part, where both parts of the spring are configured between the substrate and the movable part to support the movable part on the substrate. The two or more split parts of the spring enable two or more independent voltages to be applied to the movable part. The split spring of the invention may be used in MEMS devices for optical switches in order to provide independent voltages to the movable part(s) in those devices.

Abstract translation: 集成装置具有至少两个彼此不直接电接触的分开部分的弹簧。 集成装置还具有基板和可动部，弹簧的两部分构造在基板和可动部之间，以支撑基板上的可动部。 弹簧的两个或多个分开部分能够将两个或多个独立电压施加到可动部件。 本发明的裂缝弹簧可以用于光学开关的MEMS装置中，以便为这些装置中的可移动部件提供独立的电压。

公开(公告)号：US06682871B2

公开(公告)日：2004-01-27

申请号：US09789887

申请日：2001-02-21

Applicant: Nan Zhang

Inventor： Nan Zhang

IPC: G03F700

CPC classification number: G02B6/357 ,  B81B2201/033 ,  B81B2201/045 ,  B81C1/00182 ,  B81C2201/0109 ,  B81C2203/0136 ,  G02B6/3514 ,  G02B6/3518 ,  G02B6/3544 ,  G02B6/3584 ,  H02N1/008

Abstract: A MEMS-based optical switch having improved characteristics and methods for manufacturing the same are provided. In accordance with one embodiment, an optical switch includes a single comb drive actuator having a deflecting beam structure and a mirror coupled to the actuator. The mirror is capable of being moved between an extended position interposed between waveguide channels and a retracted position apart from the waveguide channels. The actuator applies a force capable of deflecting the beam structure and moving the mirror to one of the extended positions or the retracted position and the beam structure returns the mirror to the other of the extended position or the retracted position in the absence of the application of force.

Abstract translation: 提供了具有改进的特性的MEMS基光开关及其制造方法。 根据一个实施例，光学开关包括具有偏转梁结构的单个梳状驱动致动器和耦合到致动器的反射镜。 镜子能够在介于波导通道之间的延伸位置与离开波导通道的缩回位置之间移动。 致动器施加能够使梁结构偏转并且将反射镜移动到延伸位置或缩回位置中的一个的力，并且梁结构在没有应用的情况下将反射镜返回到延伸位置或缩回位置中的另一个 力。

公开(公告)号：US20030227700A1

公开(公告)日：2003-12-11

申请号：US10327855

申请日：2002-12-26

Applicant: FUJITSU LIMITED ,  FUJITSU MEDIA DEVICES LIMITED

Inventor： Yoshihiro Mizuno ,  Satoshi Ueda ,  Osamu Tsuboi ,  Ippei Sawaki ,  Hisao Okuda ,  Norinao Kouma ,  Hiromitsu Soneda ,  Fumio Yamagishi

IPC: G02B026/08

CPC classification number: G02B26/0841 ,  B81B2201/045 ,  B81B2203/0136 ,  B81C1/00182 ,  B81C2203/0109 ,  Y10S359/904

Abstract: A micro mirror unit includes a moving part carrying a mirror portion, a frame and torsion bars connecting the moving part to the frame. The moving part, the frame and the torsion bars are formed integral from a material substrate. The frame includes a portion thicker than the moving part.

Abstract translation: 微镜单元包括承载镜部分的移动部分，框架和将移动部件连接到框架的扭杆。 移动部件，框架和扭杆从材料基板形成为一体。 框架包括比移动部分更厚的部分。

公开(公告)号：US20030202735A1

公开(公告)日：2003-10-30

申请号：US10136683

申请日：2002-04-30

Applicant: Xerox Corporation

Inventor： John L. Dunec ,  Eric Peeters ,  Armin R. Volkel ,  Michel A. Rosa ,  Dirk DeBruyker ,  Thomas Hantschel

IPC: H02N010/00 ,  G02B006/26 ,  G02B006/42

CPC classification number: B81B3/0008 ,  B81B3/0021 ,  B81B2201/042 ,  B81B2201/045 ,  B81B2203/0118 ,  B81B2203/058 ,  G02B26/0841 ,  H02N1/002

Abstract: A MEMS system including a fixed electrode and a suspended moveable electrode that is controllable over a wide range of motion. In traditional systems where an fixed electrode is positioned under the moveable electrode, the range of motion is limited because the support structure supporting the moveable electrode becomes unstable when the moveable electrode moves too close to the fixed electrode. By repositioning the fixed electrode from being directly underneath the moving electrode, a much wider range of controllable motion is achievable. Wide ranges of controllable motion are particularly important in optical switching applications.

Abstract translation: 一种MEMS系统，包括可在宽范围的运动中控制的固定电极和悬挂的可移动电极。 在固定电极位于可动电极下方的传统系统中，由于支撑可移动电极的支撑结构在可移动电极移动得太靠近固定电极时，运动范围受到限制。 通过将固定电极重新定位在移动电极的正下方，可以实现更宽范围的可控运动。 宽范围的可控运动在光交换应用中尤其重要。

公开(公告)号：US20030184889A1

公开(公告)日：2003-10-02

申请号：US10099466

申请日：2002-03-14

Inventor： Murray Steven Rodgers

IPC: G02B026/08 ,  G02B007/182

CPC classification number: G02B7/182 ,  B81B3/004 ,  B81B7/0003 ,  B81B2201/045 ,  G02B5/08

Abstract: The present invention is generally directed to a method and assembly for elevating and supporting a microstructure of a MEM system generally by engaging a positioning system of the MEM system with a first elevator lifter. The MEM system generally includes a first microstructure (such as a mirror) disposed in vertically spaced relation to a substrate. The positioning system generally includes an actuator assembly movably interconnected with the substrate, an elevator pivotally interconnected with the substrate and further interconnected with the microstructure, and a tether interconnecting the actuator assembly and the elevator. The first elevator lifter is provided to engage the elevator to lift/elevate the microstructure away from the substrate generally after fabrication of the MEM system and prior to utilizing the microstructure in operation of the MEM system.

Abstract translation: 本发明一般涉及用于通过将MEM系统的定位系统与第一电梯升降机接合来提升和支撑MEM系统的微结构的方法和组件。 MEM系统通常包括与衬底垂直间隔设置的第一微结构（例如反射镜）。 定位系统通常包括可移动地与衬底互连的致动器组件，与衬底枢转地互连并与微结构相互连接的电梯以及将致动器组件和电梯互连的系绳。 第一电梯升降器被设置成接合电梯，以在MEM系统的制造之后以及在MEM系统的操作中利用微结构之前，一般地将微结构提升/升高。

公开(公告)号：US06591027B2

公开(公告)日：2003-07-08

申请号：US09794773

申请日：2001-02-27

Applicant: Robert E. Stewart ,  Agop H. Cherbettchian ,  Samuel Fersht ,  David B. Hall

Inventor： Robert E. Stewart ,  Agop H. Cherbettchian ,  Samuel Fersht ,  David B. Hall

IPC: G02B626

CPC classification number: G02B26/0866 ,  B81B3/0024 ,  B81B2201/045 ,  B81B2203/0109 ,  B81B2203/051 ,  B81B2203/053 ,  G02B6/3514 ,  G02B6/3518 ,  G02B6/3546 ,  G02B6/358 ,  G02B6/3584 ,  G02B26/0841 ,  H01H2001/0042

Abstract: A bi-stable micro-actuator is formed from a first and a second silicon-on-insulator wafer fused together at an electrical contact layer. A cover with a V-groove defines an optical axis. A collimated optical signal source in the V-groove couples an optical signal to an optical port in the V-groove. A mirror surface on a transfer member blocks or reflects the optical signal. The transfer member has a point of support at the first and second end. The mirror blocks or reflects the optical axis. An expandable structure applies a compressive force between the first and second point of support of the transfer member along a compressive axis to hold the transfer member in a bowed first state or a bowed second state. A control signal applied to a heating element in the expandable structure reduces the compressive force, switching the transfer member to a second state.

Abstract translation: 双稳态微致动器由在电接触层处熔合在一起的第一和第二绝缘体上硅晶片形成。 具有V形槽的盖子定义了光轴。 V沟槽中的准直光信号源将光信号耦合到V沟槽中的光端口。 转印部件上的镜面阻挡或反射光信号。 传送构件在第一和第二端具有支撑点。 镜子阻挡或反射光轴。 可膨胀结构沿着压缩轴线在转移构件的第一和第二支撑点之间施加压缩力，以将转印构件保持在弯曲的第一状态或弯曲的第二状态。 施加到可膨胀结构中的加热元件的控制信号减小了压缩力，将转印构件切换到第二状态。

公开(公告)号：US20030049879A1

公开(公告)日：2003-03-13

申请号：US09915217

申请日：2001-07-25

Inventor： Chuang-Chia Lin

IPC: H01L021/00 ,  C23F001/00

CPC classification number: G02B6/3518 ,  B81B3/004 ,  B81B2201/045 ,  B81B2203/058 ,  B81C2201/053 ,  G02B6/3514 ,  G02B6/3546 ,  G02B6/3566 ,  G02B6/357 ,  G02B6/3572 ,  G02B6/358

Abstract: A microelectromechanical systems (MEMS) element, MEMS optical switch and MEMS fabrication method are described. The MEMS element comprises a crystalline and moveable element is moveably attached to the substrate. The moveable element includes a perpendicular portion oriented substantially perpendicular to a plane of the substrate. The crystal structure of the perpendicular portion and substrate are substantially similar. The moveable element moveable is moveably attached to the substrate for motion substantially constrained to a plane oriented substantially perpendicular to a plane of the substrate. In at least one position, a part of a perpendicular portion of the moveable element projects beyond a surface of the substrate. The moveable element may be retained in place by a latch. The perpendicular portion may be formed substantially perpendicular portion to the substrate. An array of such structures can be implemented to work as an optical switch. The optical switch may comprise a crystalline substrate and one or more moveable elements moveably attached to the substrate The MEMS elements may be fabricated by providing a substrate; forming one or more trenches in the substrate to define a perpendicular portion of a element; and moveably attaching the moveable element to a first surface of the substrate; removing a portion of the substrate such that at least a part of the perpendicular portion projects beyond a second surface of the substrate. The various embodiments provide for a robust and reliable MEMS elements that may be simply fabricated and densely packed.

Abstract translation: 描述了微机电系统（MEMS）元件，MEMS光开关和MEMS制造方法。 MEMS元件包括可移动地附接到基底的结晶和可移动元件。 可移动元件包括垂直于基本垂直于基底平面的垂直部分。 垂直部分和基底的晶体结构基本相似。 可移动的可移动元件可移动地附接到基板，用于基本上约束到基本上垂直于基板的平面定向的平面的运动。 在至少一个位置中，可移动元件的垂直部分的一部分突出超过衬底的表面。 可移动元件可以通过闩锁保持在适当的位置。 垂直部分可以形成为基本上垂直于基底的部分。 可以实现这种结构的阵列以用作光学开关。 光学开关可以包括晶体衬底和可移动地附接到衬底的一个或多个可移动元件。可以通过提供衬底来制造MEMS元件; 在所述衬底中形成一个或多个沟槽以限定元件的垂直部分; 以及将所述可移动元件可移动地附接到所述基板的第一表面; 去除所述基底的一部分，使得所述垂直部分的至少一部分突出超过所述基底的第二表面。 各种实施例提供了可以简单地制造和密集包装的鲁棒且可靠的MEMS元件。

公开(公告)号：US20020191267A1

公开(公告)日：2002-12-19

申请号：US09863654

申请日：2001-05-23

Applicant: AXSUN Technologies, Inc.

Inventor： Dale C. Flanders ,  Martin A. Schmidt

IPC: G02F001/03 ,  G02F001/07 ,  G02B026/00

CPC classification number: B81B3/0021 ,  B81B2201/045 ,  G02B6/353 ,  G02B6/3552 ,  G02B6/3566 ,  G02B6/357 ,  G02B6/358 ,  G02B26/02

Abstract: A zipper actuator for optical beam control has an optical port formed through the substrate. The cantilevered beam of the actuator preferably includes a paddle for switching the optical signal. Mirror structures can be provided on the paddle for beam switching. In some embodiments, MEMS or electrode latches are further provided.

Abstract translation: 用于光束控制的拉链致动器具有通过基底形成的光学端口。 致动器的悬臂梁优选地包括用于切换光信号的桨。 可以在桨上提供镜结构用于光束切换。 在一些实施例中，还提供MEMS或电极锁存器。

公开(公告)号：US06450654B1

公开(公告)日：2002-09-17

申请号：US09704264

申请日：2000-11-01

Applicant: David Alan Koester

Inventor： David Alan Koester

IPC: G02S7182

CPC classification number: B81B3/0072 ,  B81B2201/045 ,  B81C2201/0167 ,  G02B26/0866

Abstract: A microelectronic reflector is fabricated by forming a first polysilicon layer on a microelectronic substrate, forming a first phosphosilicate glass (PSG) layer on the first polysilicon layer, and reactive ion etching to remove the first PSG layer from at least a portion of the first polysilicon layer. A second polysilicon layer is formed on at least a portion of the first polysilicon layer from which the first PSG layer was removed and a second PSG layer is formed on at least a second portion of the second polysilicon layer. Reactive ion etching is performed to remove the second PSG layer from at least a portion of the second polysilicon layer. A third PSG layer then is formed on at least a portion of the second polysilicon layer from which the second PSG layer was removed. Reactive ion etching is performed to remove the third PSG layer from at least a portion of the second polysilicon layer. By forming a third PSG layer, and reactive ion etching this layer, additional stress may be created in the first and/or second doped polysilicon layers that bends the ends of the doped first and/or second polysilicon layers towards the microelectronic substrate upon release of the treated polysilicon layer from the substrate, compared to doped polysilicon layers on which the third PSG layer was not formed and reactive ion etched. This increased stress may be counteracted by forming a stress-correcting layer on at least a portion of the second polysilicon layer from which the third PSG layer was removed, and then forming a reflective layer such as gold on at least a portion of the stress-correcting layer. The stress-correcting layer preferably comprises platinum, which can produce high stresses that can counteract the stresses in the first and second doped polysilicon layers, to thereby allow a flat mirror and/or beam to be produced.

Abstract translation: 通过在微电子衬底上形成第一多晶硅层，在第一多晶硅层上形成第一磷硅酸盐玻璃（PSG）层，以及反应离子刻蚀以从第一多晶硅层的至少一部分去除第一PSG层来制造微电子反射器 层。 在去除第一PSG层的第一多晶硅层的至少一部分上形成第二多晶硅层，并且在第二多晶硅层的至少第二部分上形成第二PSG层。 执行反应离子蚀刻以从第二多晶硅层的至少一部分去除第二PSG层。 然后在去除第二PSG层的第二多晶硅层的至少一部分上形成第三PSG层。 执行反应离子蚀刻以从第二多晶硅层的至少一部分去除第三PSG层。 通过形成第三PSG层和反应离子蚀刻该层，可以在第一和/或第二掺杂多晶硅层中产生额外的应力，该第一和/或第二掺杂多晶硅层在释放时折射掺杂的第一和/或第二多晶硅层的端部朝向微电子衬底 与其上未形成第三PSG层的反射离子蚀刻的掺杂多晶硅层相比，来自衬底的处理过的多晶硅层。 这种增加的应力可以通过在去除第三PSG层的第二多晶硅层的至少一部分上形成应力校正层，然后在至少一部分应力层上形成反射层，例如金， 校正层。 应力校正层优选地包括铂，其可以产生可以抵消第一和第二掺杂多晶硅层中的应力的高应力，从而允许产生平坦的反射镜和/或光束。