摘要:
Disclosed is a positive-working chemical-amplification photoresist composition used in the patterning works in the manufacture of semiconductor devices, with which quite satisfactory patterning of a photoresist layer can be accomplished even on a substrate surface provided with an undercoating film of silicon nitride, phosphosilicate glass, borosilicate glass and the like in contrast to the prior art using a conventional photoresist composition with which satisfactory patterning can hardly be accomplished on such an undercoating film. The photoresist composition comprises, besides a film-forming resin capable of being imparted with increased solubility in an alkaline solution by interacting with an acid and a radiation-sensitive acid-generating compound, a phosphorus-containing oxo acid such as phosphoric acid and phosphonic acid or an ester thereof.
摘要:
Amine compounds having a cyano group are useful in resist compositions for preventing a resist film from thinning and also for enhancing the resolution and focus margin of resist.
摘要:
A radiation-sensitive resin composition comprising (A) a photoacid generator such as 2,4,6-trimethylphenyldiphenylsulfonium 2,4-difluorobenzenesulfonate or 2,4,6-trimethylphenyldiphenylsulfonium 4-trifluoromethylbenzenesulfonate and (B) a resin having an acetal structure typified by a poly(p-hydroxystyrene) resin in which a part of hydrogen atoms of phenolic hydroxyl groups have been replaced by 1-ethoxyethyl groups, 1-ethoxyethyl groups and t-butoxycarbonyl groups, or 1-ethoxyethyl groups and t-butyl groups. The resin composition is sensitive to deep ultraviolet rays and charged particles such as electron beams, exhibits excellent resolution performance and pattern shape-forming capability, and suppresses a nano-edge roughness phenomenon to a minimal extent.
摘要:
Fluorocarbinol and/or fluoroacid functionalized silsesquioxane polymers and copolymers are provided. The polymers are substantially transparent to ultraviolet radiation (UV), i.e., radiation of a wavelength less than 365 nm and are also substantially transparent to deep ultraviolet radiation (DUV), i.e., radiation of a wavelength less than 250 nm, including 157 nm, 193 nm and 248 nm radiation, and are thus useful in single and bilayer, positive and negative, lithographic photoresist compositions, providing improved sensitivity and resolution. A process for using the composition to generate resist images on a substrate is also provided, i.e., in the manufacture of integrated circuits or the like.
摘要:
In accordance with the present invention there is provided an imaging element for lithographic offset printing. The imaging element comprises hydrophobic polymer particles in an aqueous medium, a substance for converting light into heat and an inorganic salt. The imaging element may be used for printing long run lengths on lower quality paper and in the presence of set-off powder. The imaging element may be imaged and developed on-press and may be sprayed onto a hydrophilic surface to create a printing surface that may be processed wholly on-press. The hydrophilic surface may be a printing plate substrate or the printing cylinder of a printing press or a seamless sleeve around the printing cylinder of a printing press. This cylinder may be conventional or seamless.
摘要:
A photosensitive polymer having a protecting group including a fused aromatic ring, and a photoresist composition including the photosensitive polymer are provided. The photosensitive polymer has an acid-labile protecting group at its polymer backbone, the acid-labile protecting group including a fused aromatic ring having formula: 1 where R1 is hydrogen atom or alkyl group having from 1 to 4 carbon atoms; X is hydrogen atom, halogen, alkyl, or alkoxy; and y is an integer from 1 to 3, wherein the fused aromatic ring is a liner ring or branched ring with y greater than or equal to 2. A photoresist composition is also provided which includes the photosensitive polymer and a photoacid generator(PAG).
摘要:
A lithographic printing plate precursor comprising a support having a hydrophilic surface having provided thereon an image-forming layer containing a hydrophobic high molecular compound having at least either a functional group represented by formula (1) or a functional group represented by formula (2): 1 wherein Xnull represents an iodonium ion, a sulfonium ion or a diazonium ion.
摘要:
The photoacid generator according to the present invention is represented by the general formula (1): 1 wherein R1 and R2 are respectively H, OH or alkyl or alkoxy group of C1-5 and are the same or different, n is an integer from 1 to 3, and Ar1 is a naphthalene unit. The photosensitive resin used in a composition of the invention is represented by the general formula (2): 2 wherein X is a tetravalent aromatic or aliphatic organic radical, Y is a bivalent aromatic or aliphatic organic radical, and R3 and R4 independently are H or a monovalent aliphatic organic protecting group removable by acid.
摘要:
The invention discloses an improvement in the photo-lithographic patterning process of a photoresist layer in the manufacture of semiconductor devices in which occurrence of defects in the patterned resist layer can be greatly suppressed resulting in increased reliability of the semiconductor devices and productivity thereof. The improvement can be accomplished by using a chemical-amplification positive-working photoresist composition which exhibits a rate of film thickness reduction in the range from 0.09 to 1.0 nm/second when the photoresist layer before light-exposure is kept in a 2.38% aqueous solution of tetramethylammonium hydroxide at 23null C. to dissolve away the resist layer.
摘要:
Thermally imageable lithographic printing plate precursors and heat-sensitive compositions for use in these printing plate precursors are disclosed. The compositions contain an aqueous developer soluble polymer, such as a phenolic resin; a compound that reduces the aqueous developer solubility of the polymer; and optionally, and infrared absorber. Examples of compounds that reduce the aqueous developer solubility of the polymer are those that contain at least one quarternized nitrogen atom, such as quinolinium compounds, benzothiazolium compounds, pyridinium compounds, and imidazoline compounds. On thermal imaging, the irradiated areas become more soluble in the aqueous developer and can be removed to form a positive image.