Positive-working chemical-amplification photoresist composition
    41.
    发明申请
    Positive-working chemical-amplification photoresist composition 审中-公开
    正性化学增幅光刻胶组合物

    公开(公告)号:US20020119393A1

    公开(公告)日:2002-08-29

    申请号:US10126673

    申请日:2002-04-22

    IPC分类号: G03F007/038

    摘要: Disclosed is a positive-working chemical-amplification photoresist composition used in the patterning works in the manufacture of semiconductor devices, with which quite satisfactory patterning of a photoresist layer can be accomplished even on a substrate surface provided with an undercoating film of silicon nitride, phosphosilicate glass, borosilicate glass and the like in contrast to the prior art using a conventional photoresist composition with which satisfactory patterning can hardly be accomplished on such an undercoating film. The photoresist composition comprises, besides a film-forming resin capable of being imparted with increased solubility in an alkaline solution by interacting with an acid and a radiation-sensitive acid-generating compound, a phosphorus-containing oxo acid such as phosphoric acid and phosphonic acid or an ester thereof.

    摘要翻译: 公开了用于制造半导体器件的图案化工作中的正性化学扩增光致抗蚀剂组合物,即使在具有氮化硅,磷硅酸盐的底涂膜的衬底表面上也可以实现光刻胶层的非常令人满意的图案化 玻璃,硼硅酸盐玻璃等,与现有技术相比,使用常规的光致抗蚀剂组合物,在这种底涂膜上难以实现令人满意的图案化。 光致抗蚀剂组合物除了能够通过与酸和辐射敏感的产酸化合物相互作用而在碱性溶液中赋予增加的溶解性的成膜树脂之外,还含有含磷的含氧酸如磷酸和膦酸 或其酯。

    Radiation-sensitive resin composition
    43.
    发明申请
    Radiation-sensitive resin composition 有权
    辐射敏感树脂组合物

    公开(公告)号:US20020090569A1

    公开(公告)日:2002-07-11

    申请号:US09987916

    申请日:2001-11-16

    IPC分类号: G03F007/038

    摘要: A radiation-sensitive resin composition comprising (A) a photoacid generator such as 2,4,6-trimethylphenyldiphenylsulfonium 2,4-difluorobenzenesulfonate or 2,4,6-trimethylphenyldiphenylsulfonium 4-trifluoromethylbenzenesulfonate and (B) a resin having an acetal structure typified by a poly(p-hydroxystyrene) resin in which a part of hydrogen atoms of phenolic hydroxyl groups have been replaced by 1-ethoxyethyl groups, 1-ethoxyethyl groups and t-butoxycarbonyl groups, or 1-ethoxyethyl groups and t-butyl groups. The resin composition is sensitive to deep ultraviolet rays and charged particles such as electron beams, exhibits excellent resolution performance and pattern shape-forming capability, and suppresses a nano-edge roughness phenomenon to a minimal extent.

    摘要翻译: 一种辐射敏感性树脂组合物,其包含(A)光酸产生剂如2,4,6-三甲基苯基二苯基锍2,4-二氟苯磺酸盐或2,4,6-三甲基苯基二苯基锍4-三氟甲基苯磺酸盐和(B)具有缩醛结构的树脂,以 一部分酚羟基的氢原子被1-乙氧基乙基,1-乙氧基乙基,叔丁氧基羰基或1-乙氧基乙基和叔丁基代替的聚(对 - 羟基苯乙烯)树脂。 树脂组合物对深紫外线和电子束等带电粒子敏感,显示出优异的分辨率性能和图案形状形成能力,并且在最小程度上抑制纳米边缘粗糙度现象。

    Substantially transparent aqueous base soluble polymer system for use in 157 nm resist applications
    44.
    发明申请
    Substantially transparent aqueous base soluble polymer system for use in 157 nm resist applications 审中-公开
    基本上透明的水溶性基础可溶性聚合物体系,用于157 nm抗蚀剂应用

    公开(公告)号:US20020081520A1

    公开(公告)日:2002-06-27

    申请号:US09748071

    申请日:2000-12-21

    IPC分类号: G03F007/038 G03F007/26

    摘要: Fluorocarbinol and/or fluoroacid functionalized silsesquioxane polymers and copolymers are provided. The polymers are substantially transparent to ultraviolet radiation (UV), i.e., radiation of a wavelength less than 365 nm and are also substantially transparent to deep ultraviolet radiation (DUV), i.e., radiation of a wavelength less than 250 nm, including 157 nm, 193 nm and 248 nm radiation, and are thus useful in single and bilayer, positive and negative, lithographic photoresist compositions, providing improved sensitivity and resolution. A process for using the composition to generate resist images on a substrate is also provided, i.e., in the manufacture of integrated circuits or the like.

    摘要翻译: 提供氟代甲醇和/或氟酸官能化的倍半硅氧烷聚合物和共聚物。 聚合物对紫外线(UV)基本上是透明的,即波长小于365nm的辐射,并且对深紫外辐射(DUV)也是基本透明的,即波长小于250nm(包括157nm)的辐射, 193 nm和248 nm辐射,因此可用于单层和双层,正面和负面,平版印刷光刻胶组合物,提供更高的灵敏度和分辨率。 还提供了使用该组合物在衬底上产生抗蚀剂图像的方法,即在集成电路等的制造中。

    Thermally convertible lithographic printing precursor
    45.
    发明申请
    Thermally convertible lithographic printing precursor 失效
    热转印平版印刷前驱体

    公开(公告)号:US20020081519A1

    公开(公告)日:2002-06-27

    申请号:US09745548

    申请日:2000-12-26

    IPC分类号: G03F007/038

    摘要: In accordance with the present invention there is provided an imaging element for lithographic offset printing. The imaging element comprises hydrophobic polymer particles in an aqueous medium, a substance for converting light into heat and an inorganic salt. The imaging element may be used for printing long run lengths on lower quality paper and in the presence of set-off powder. The imaging element may be imaged and developed on-press and may be sprayed onto a hydrophilic surface to create a printing surface that may be processed wholly on-press. The hydrophilic surface may be a printing plate substrate or the printing cylinder of a printing press or a seamless sleeve around the printing cylinder of a printing press. This cylinder may be conventional or seamless.

    摘要翻译: 根据本发明,提供了一种用于光刻胶版印刷的成像元件。 成像元件包括水性介质中的疏水性聚合物颗粒,将光转化成热的物质和无机盐。 成像元件可以用于在较低质量的纸张上以及存在抵消粉末的情况下长时间印刷。 成像元件可以在压制器上成像和显影,并且可以喷涂到亲水表面上以形成可以完全在印刷机上加工的印刷表面。 亲水性表面可以是印刷基板或印刷机的印刷滚筒或围绕印刷机的印刷滚筒的无缝套筒。 该圆筒可以是常规的或无缝的。

    Photosensitive polymer having fused aromatic ring and photoresist composition containing the same
    46.
    发明申请
    Photosensitive polymer having fused aromatic ring and photoresist composition containing the same 失效
    具有稠合芳族环的光敏聚合物和含有它们的光致抗蚀剂组合物

    公开(公告)号:US20020076641A1

    公开(公告)日:2002-06-20

    申请号:US09888912

    申请日:2001-06-25

    IPC分类号: G03F007/038

    摘要: A photosensitive polymer having a protecting group including a fused aromatic ring, and a photoresist composition including the photosensitive polymer are provided. The photosensitive polymer has an acid-labile protecting group at its polymer backbone, the acid-labile protecting group including a fused aromatic ring having formula: 1 where R1 is hydrogen atom or alkyl group having from 1 to 4 carbon atoms; X is hydrogen atom, halogen, alkyl, or alkoxy; and y is an integer from 1 to 3, wherein the fused aromatic ring is a liner ring or branched ring with y greater than or equal to 2. A photoresist composition is also provided which includes the photosensitive polymer and a photoacid generator(PAG).

    摘要翻译: 提供了具有包含稠合芳环的保护基的光敏聚合物和包含该光敏聚合物的光致抗蚀剂组合物。 光敏聚合物在其聚合物主链上具有酸不稳定的保护基,酸不稳定保护基包括具有下式的稠合芳环:其中R 1是氢原子或具有1至4个碳原子的烷基; X是氢原子,卤素,烷基或烷氧基; y为1〜3的整数,其中稠合芳香环为y大于或等于2的衬垫环或分支环。还提供光致抗蚀剂组合物,其包含光敏聚合物和光酸产生剂(PAG)。

    Ion-type photoacid generator containing naphthol and photosensitive polyimide composition prepared by using the same
    48.
    发明申请
    Ion-type photoacid generator containing naphthol and photosensitive polyimide composition prepared by using the same 失效
    含有萘酚和使用其的光敏聚酰亚胺组合物的离子型光酸产生剂

    公开(公告)号:US20020048719A1

    公开(公告)日:2002-04-25

    申请号:US09750033

    申请日:2000-12-29

    IPC分类号: G03F007/038 C07C39/35

    摘要: The photoacid generator according to the present invention is represented by the general formula (1): 1 wherein R1 and R2 are respectively H, OH or alkyl or alkoxy group of C1-5 and are the same or different, n is an integer from 1 to 3, and Ar1 is a naphthalene unit. The photosensitive resin used in a composition of the invention is represented by the general formula (2): 2 wherein X is a tetravalent aromatic or aliphatic organic radical, Y is a bivalent aromatic or aliphatic organic radical, and R3 and R4 independently are H or a monovalent aliphatic organic protecting group removable by acid.

    摘要翻译: 根据本发明的光致酸产生剂由通式(1)表示:其中R1和R2分别为H,OH或C1-5的烷基或烷氧基,并且相同或不同,n是1至 3,Ar1为萘单元。 用于本发明组合物的光敏树脂由通式(2)表示:其中X是四价芳族或脂族有机基团,Y是二价芳族或脂族有机基团,R 3和R 4独立地是H或 由酸除去的一价脂肪族有机保护基。

    Method for the preparation of a semiconductor device
    49.
    发明申请
    Method for the preparation of a semiconductor device 有权
    制备半导体器件的方法

    公开(公告)号:US20020045133A1

    公开(公告)日:2002-04-18

    申请号:US09939842

    申请日:2001-08-28

    IPC分类号: G03F007/038

    CPC分类号: G03F7/0392

    摘要: The invention discloses an improvement in the photo-lithographic patterning process of a photoresist layer in the manufacture of semiconductor devices in which occurrence of defects in the patterned resist layer can be greatly suppressed resulting in increased reliability of the semiconductor devices and productivity thereof. The improvement can be accomplished by using a chemical-amplification positive-working photoresist composition which exhibits a rate of film thickness reduction in the range from 0.09 to 1.0 nm/second when the photoresist layer before light-exposure is kept in a 2.38% aqueous solution of tetramethylammonium hydroxide at 23null C. to dissolve away the resist layer.

    摘要翻译: 本发明公开了在半导体器件的制造中光致抗蚀剂层的光刻图案化工艺的改进,其中可以大大抑制图案化抗蚀剂层中的缺陷的发生,从而提高半导体器件的可靠性及其生产率。 可以通过使用化学扩增正性光致抗蚀剂组合物来实现改进,当将曝光前的光致抗蚀剂层保持在2.38%的水溶液中时,其表现出在0.09至1.0nm /秒的范围内的膜厚度降低速率 的氢氧化四甲铵在23℃下溶解掉抗蚀剂层。

    Lithographic printing forms
    50.
    发明申请
    Lithographic printing forms 失效
    平版印刷版

    公开(公告)号:US20020045124A1

    公开(公告)日:2002-04-18

    申请号:US09860943

    申请日:2001-05-18

    IPC分类号: G03F007/038

    摘要: Thermally imageable lithographic printing plate precursors and heat-sensitive compositions for use in these printing plate precursors are disclosed. The compositions contain an aqueous developer soluble polymer, such as a phenolic resin; a compound that reduces the aqueous developer solubility of the polymer; and optionally, and infrared absorber. Examples of compounds that reduce the aqueous developer solubility of the polymer are those that contain at least one quarternized nitrogen atom, such as quinolinium compounds, benzothiazolium compounds, pyridinium compounds, and imidazoline compounds. On thermal imaging, the irradiated areas become more soluble in the aqueous developer and can be removed to form a positive image.

    摘要翻译: 公开了用于这些印版前体的可热成像的平版印刷版前体和热敏组合物。 组合物含有显影剂水溶性聚合物,例如酚醛树脂; 降低聚合物的水性显影剂溶解度的化合物; 和任选地,和红外线吸收剂。 降低聚合物的水性显影剂溶解度的化合物的实例是含有至少一个季铵化氮原子的化合物,例如喹啉鎓化合物,苯并噻唑鎓化合物,吡啶鎓化合物和咪唑啉化合物。 在热成像中,被照射的区域变得更易溶于含水显影剂,并且可以除去以形成正像。