公开(公告)号：US20040109280A1

公开(公告)日：2004-06-10

申请号：US10315915

申请日：2002-12-09

发明人： Bum-Ki Moon ,  Gerhard Beitel ,  Osamu Arisumi ,  Hiroshi Itokawa

IPC分类号： H01G004/35

CPC分类号： H01L28/56

摘要： In a capacitor and a method for its manufacture, a first electrode layer and a second electrode layer are formed such that a ferroelectric layer is situated between the first and second electrode layer. A first bilayer or multi-layer seed structure is formed between the ferroelectric layer and either the first electrode layer or the second electrode layer

摘要翻译： 在电容器及其制造方法中，形成第一电极层和第二电极层，使得铁电层位于第一和第二电极层之间。 在铁电层与第一电极层或第二电极层之间形成第一双层或多层种子结构

公开(公告)号：US20040017645A1

公开(公告)日：2004-01-29

申请号：US10622908

申请日：2003-07-17

申请人： NEC TOKIN Corporation

发明人： Satoshi Arai ,  Takayuki Inoi ,  Yoshihiko Saiki ,  Sadamu Toita

IPC分类号： H01G004/35

CPC分类号： H01G2/065 ,  H01G9/042 ,  H01G9/08 ,  H01G9/15 ,  Y10T29/417

摘要： An external cathode terminal (16) is adhered to one surface of a capacitor element while a prepreg (25) is adhered to another surface of the capacitor element. A reinforcement plate (26) is adhered to the prepreg. Heat and pressure are applied to the external cathode terminal, the prepreg, and the reinforcement plate to elute thermosetting resin from the prepreg in the side of the capacitor element, thereby sealing the side of the capacitor element with eluted material (27A, 27B). Inasmuch as transfer molding is not used as exterior package, the element never deforms by injection pressure of resin. It is possible to thin by a thickness of exterior package resin. Inasmuch as eluted thermosetting resin does not include a mold release agent, it has good adhesion for the external cathode terminal.

公开(公告)号：US20040008469A1

公开(公告)日：2004-01-15

申请号：US10600358

申请日：2003-06-23

申请人： SHOWA DENKO K.K.

发明人： Kazuhiro Omori ,  Kazumi Naito

IPC分类号： H01G004/35

CPC分类号： H01G9/0525 ,  B22F2998/00 ,  C22C1/045 ,  C22C32/00

摘要： An object of the present invention is to provide an antimony-containing niobium sintered body for a capacitor having a small specific leakage current value, an antimony-containing niobium powder for use in the sintered body, and a capacitor using the sintered body. In the present invention, an antimony-containing niobium powder having an antimony content of preferably about 0.1 to about 10 mol % and an average particle size of preferably about 0.2 to about 5 nullm is used. By using this antimony-containing niobium powder, a sintered body and a capacitor are constructed.

公开(公告)号：US20030231456A1

公开(公告)日：2003-12-18

申请号：US10435199

申请日：2003-05-12

发明人： Anthony Anthony ,  William Anthony

IPC分类号： H01G004/35

CPC分类号： H05K9/0039 ,  H01G4/35 ,  H01L23/49827 ,  H01L23/50 ,  H01L23/552 ,  H01L2223/6622 ,  H01L2924/0002 ,  H01L2924/3011 ,  H05K1/141 ,  H05K1/162 ,  H05K3/3436 ,  H05K9/0018 ,  H01L2924/00

摘要： An energy conditioning structure comprised of any combination of multilayer or monolithic energy conditioners with operable conductors, all selectively arranged and shielded for attachment to at least a conductive substrate.

摘要翻译： 由多层或单片能量调节器与可操作导体组合的能量调节结构，全部选择性地排列和屏蔽以附着到至少导电基底。

公开(公告)号：US20030223177A1

公开(公告)日：2003-12-04

申请号：US10453311

申请日：2003-06-03

发明人： Mitsutoshi Higashi ,  Hideaki Sakaguchi ,  Hiroko Koike

IPC分类号： H01G004/35 ,  H01G004/228

CPC分类号： H01G4/33 ,  H01G2/06 ,  H01G4/228 ,  H01L21/4857 ,  H01L23/49822 ,  H01L27/0805 ,  H01L28/40 ,  H01L28/65 ,  H01L2924/0002 ,  H05K2201/0179 ,  H05K2201/09509 ,  H01L2924/00

摘要： There is provided a capacitor embedded in a substrate having a small thickness and requiring only a small space for short connection lines. The substrate-embedded capacitor comprises a substrate having an opening, a first conductive layer on the substrate, a dielectric layer on the first conductive layer, a second conductive layer on the dielectric layer, and an insulating layer formed on the second conductive layer and having an opening. In the substrate-embedded capacitor, the first conductive layer and the second conductive layer are exposed through the openings in the substrate and the insulating layer, respectively.

摘要翻译： 提供了嵌入到具有小厚度的基板中的电容器，并且仅需要较短的连接线的较小空间。 衬底嵌入式电容器包括具有开口的衬底，衬底上的第一导电层，第一导电层上的电介质层，介电层上的第二导电层，以及形成在第二导电层上的绝缘层， 一个开口 在衬底嵌入式电容器中，第一导电层和第二导电层分别通过衬底和绝缘层中的开口露出。

公开(公告)号：US20030142459A1

公开(公告)日：2003-07-31

申请号：US10325254

申请日：2002-12-18

发明人： Peter Graham Laws

IPC分类号： H01G004/35

CPC分类号： H01L23/5227 ,  H01L23/5223 ,  H01L27/0629 ,  H01L27/0805 ,  H01L28/40 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： An integrated circuit having a substrate and an LC tank circuit comprises an inductor with parallel capacitors. The capacitors include triple plate integrated capacitors having a highest metal plate, a common middle plate and a lowest metal plate. The lowest plate is connected to a virtual ground node. A control circuit element connected to the middle plate allows the resonant frequency of the tank circuit to be controlled.

摘要翻译： 具有基板和LC槽电路的集成电路包括具有并联电容器的电感器。 电容器包括具有最高金属板，公共中间板和最低金属板的三板集成电容器。 最低板连接到虚拟接地节点。 连接到中间板的控制电路元件允许控制电路的谐振频率。

公开(公告)号：US20030142458A1

公开(公告)日：2003-07-31

申请号：US10313911

申请日：2002-12-04

发明人： Jae-hyun Joo ,  Wan-don Kim

IPC分类号： H01G004/35

CPC分类号： H01L28/60

摘要： Methods for forming a stacked capacitor include forming a first dielectric layer having a contact plug therein on an integrated circuit substrate. A second dielectric layer including a storage node hole is formed adjacent the contact plug on the first dielectric layer. A conductive layer is deposited into the storage node hole and on the second dielectric layer. The conductive layer has an associated work function. The conductive layer is oxidized to form a conductive oxide layer on the conductive layer. The conductive oxide layer has an associated work function that is sufficiently close to the work function of the conductive layer that the conductive layer and the conductive oxide layer operate together as the node of the stacked capacitor. The second dielectric layer is removed to define the node of the stacked capacitor. The stacked capacitor may be a metal-insulator-metal (MIM) capacitor and the conductive layer may be formed of a material selected from the group consisting of ruthenium (Ru), tungsten (W) and iridium (Ir). Related structures (devices) are also disclosed.

摘要翻译： 形成叠层电容器的方法包括在集成电路基板上形成具有接触插塞的第一介质层。 包括存储节点孔的第二电介质层与第一电介质层上的接触插塞相邻地形成。 导电层沉积到存储节点孔和第二介电层上。 导电层具有相关的功能。 导电层被氧化以在导电层上形成导电氧化物层。 导电氧化物层具有与导电层和导电氧化物层一起作为层叠电容器的节点一起工作的导电层的功函数足够接近的相关功函数。 去除第二电介质层以限定堆叠电容器的节点。 层叠电容器可以是金属 - 绝缘体 - 金属（MIM）电容器，并且导电层可以由选自钌（Ru），钨（W）和铱（Ir）的材料形成。 还公开了相关结构（装置）。

公开(公告)号：US20030011958A1

公开(公告)日：2003-01-16

申请号：US09914506

申请日：2001-08-28

发明人： Gunter Kolmschlag ,  Armin Steurer

IPC分类号： H01G004/35

CPC分类号： B29C44/505 ,  B29K2027/18 ,  B29L2031/3462

摘要： The preparation, processing and use of foamed polytetrafluoroethylene is described. Extrusion of polytctrafluoroethylene with a foaming agent gives a product which can be used in the electrical industry, in the chemical industry or in chemical or plant engineering. The advantage over other processes is that the product can be prepared in a simple manner. Possible application sectors are cables, coaxial cables, gaskets, filters, filter screens, membranes and absorbers.

摘要翻译： 描述了发泡聚四氟乙烯的制备，加工和使用。 用发泡剂挤出聚四氟乙烯可提供可用于电气工业，化学工业或化学或植物工程的产品。 与其他工艺相比的优点是可以以简单的方式制备产品。 可能的应用领域是电缆，同轴电缆，垫圈，过滤器，过滤网，膜和吸收体。

公开(公告)号：US20030007312A1

公开(公告)日：2003-01-09

申请号：US10234467

申请日：2002-09-05

申请人： Matsushita Electric Industrial Co., Ltd.

发明人： Nobuhiko Yamazaki ,  Kazuaki Nakanishi ,  Shinichi Yamaguchi ,  Hisao Ohishi ,  Ryoichi Shimatani ,  Akihiro Yamaguchi ,  Kazuko Hasegawa

IPC分类号： H01G004/35

CPC分类号： H01G9/055

摘要： Sub pits are suppressed from branching in a surface layer of an aluminum foil, and an electrode foil for an aluminum electrolytic capacitor with a large electrostatic capacitance and a method of manufacturing the same are provided. A large number of main pits are formed by etching on both surfaces of the aluminum foil to extend from the surfaces in a thickness direction of the foil, sub pits are formed to branch away from the main pits for a range from a vicinity of a surface layer portion of each main pits excluding the surface layer portion, to inner ends of the main pits. Since the sub pits are not formed in the surface layer of the aluminum foil, the sub pits can be increased in density effectively to the electrostatic capacitance, allowing the electrode foil for the aluminum electrolytic capacitor to have high mechanical strength and high electrostatic capacitance.

摘要翻译： 在铝箔的表面层中抑制了子凹坑的分支，提供了具有大的静电电容的铝电解电容器的电极箔及其制造方法。 通过蚀刻在铝箔的两个表面上沿着箔的厚度方向从表面延伸形成大量的主要凹坑，从凹坑的一个范围附近形成从凹坑分支离开的凹坑， 除了表面层部分之外的每个主要凹坑的层部分到主凹坑的内端。 由于在铝箔的表面层中没有形成子凹坑，所以可以有效地提高子凹坑的静电电容，使得铝电解电容器的电极箔具有高机械强度和高静电电容。

公开(公告)号：US20020191367A1

公开(公告)日：2002-12-19

申请号：US10157828

申请日：2002-05-31

申请人： SHOWA DENKO K.K.

发明人： Atsushi Sakai ,  Ryuji Monden ,  Yuji Furuta ,  Katsuhiko Yamazaki ,  Tatsuo Obata

IPC分类号： H01G004/35

CPC分类号： H01G9/0036 ,  H01G9/15 ,  Y10T29/417

摘要： To provide a solid electrolytic capacitor where solid electrolyte is formed at the cut end part and at the masking part to a larger thickness than in other parts, where the adhesion of the solid electrolyte formed on the valve acting metal oxide film is improved, and whereby the capacitor is highly stabilized in various basic properties such as capacitance, dielectric loss (tan null), leakage current and short circuit defective ratio and also in the reflow soldering heat resistance and moisture resistance load characteristics. These solid electrolytic capacitor can be obtained by forming electrically conducting polymer on a dielectric film by specifying time for dipping of the surface of a valve actiong metal porous body with a solution containing a monomer and with a solution containing an oxidizing agent, time for vaporization of the solvent of the solution containing a monomer, and polymerization conditions after dipping of the solution containing an oxidizing agent.