Abstract:
An electron-emitting device comprises a pair of oppositely disposed device electrodes and an electroconductive film electrically connecting the device electrodes and having an electron-emitting region formed as part thereof. The electroconductive film is partly or entirely covered by a metal oxide coat containing as principal ingredient with a melting point higher than that of the material of principal ingredient of the electroconductive film. The electroconductive film has also a deposited layer comprising carbon, a carbon compound or a mixture thereof.
Abstract:
An array of field emission electron sources and a method of preparing the array which discharges electrons from desired regions of a surface electrode of field emission electron sources. The field emission electron source 10 comprises an electrically conductive substrate of p-type silicon substrate 1; n-type regions 8 of stripes of diffusion layers on one of principal surfaces of the p-type silicon substrate, strong electric field drift layers 6 formed on the n-type regions 8 which is made of oxidized porous poly-silicon for drifting electrons injected from the n-type region 8; poly-silicon layers 3 between the strong field drift layers 6; surface electrodes 7 of the stripes of thin conductive film formed in a manner to cross over the stripes of the strong field drift layer 6 and the poly-silicon layers 3. By selecting a pair of the n-type regions 8 and the surface electrodes 7 and thereby making electron emitted from the crossing points due to combination of the surface electrode 7 to be electrically applied and the n-type region 8 to be electrically applied, electrons can be discharged from desired regions of the surface electrodes 7.
Abstract:
An electron source (10) has an electron source element (10a) including a lower electrode (12), a drift layer (6) and a surface electrode (7). The drift layer (6) is interposed between the lower electrode (12) and the surface electrode (7). When a certain voltage is applied between the surface electrode (7) and the lower electrode (12) such that the surface electrode (7) has a higher potential than that of the lower electrode (12), a resultingly induced electric field allows electrons to pass through the drift layer (6) and then the electrons are emitted through the surface electrode (7). When a forward-bias voltage is applied between the surface electrode (7) and the lower electrode (12), a reverse-bias voltage is applied after the forward-bias voltage has been applied to release out of the drift layer (6) an electron captured by a trap (9) in the drift layer (6).
Abstract:
A carbon nanotube (CNT) field emission display has a cathode substrate having a cathode layer patterned on a glass substrate. The surface of the cathode layer is defined as a plurality of electron-emitting areas apart from each other, and a plurality of CNT structures is grown on the plurality of electron-emitting areas respectively.
Abstract:
A field emission display which includes thin film resistors disposed between the electron-emitting elements of a cathode and a conductive support which provides electrical connection to said electron-emitting element through said thin film.
Abstract:
The first basic structure of the electron emission element of the present invention, includes at least two electrodes disposed in a horizontal direction at a predetermined interval, and a plurality of electron emission portions made of a particle or an aggregate of the particles dispersively disposed between the electrodes. On the other hand, the second basic structure of the electron emission element of the present invention includes at least two electrodes disposed at a predetermined interval, a conductive layer disposed between the electrodes so as to be electrically connected thereto, and a plurality of electron emission portions made of a particle or an aggregate of the particles dispersively disposed on the surface of the conductive layer between the electrodes. According to these structures, an electron emission element with high stability can be obtained, in which emissions can be emitted efficiently and uniformly even in the absence of a bias voltage (electric field) from outside in an output (emission) direction of the electrons, by utilizing a transverse electric field generated between the electrodes disposed in a horizontal direction at a predetermined interval or an in-plane electric current flowing through the conductive layer disposed between the electrodes.
Abstract:
In a field emission cold cathode device having a block defined by a contour and a plurality of holes arranged in the block, each hole is uniform in shape to obtain a uniform electric current in the block when emitter cones are located in the uniform holes. A distorted hole is not arranged in the block or holes which are susceptible to be distorted are shifted or moved to other zones which are not distorted. Such uniform holes can be also obtained by preparing mask patterns of different sizes and by transcribing the mask patterns onto photoresist.
Abstract:
A field emission device (100) includes a cathode (110) and a ballast resistor (112) connected to cathode (110). Ballast resistor (112) includes a thin metallic layer (113) and a protective layer (114) disposed on metallic layer (113). Metallic layer (113) is made from chromium and has a thickness of about 40 angstroms. Protective layer (114) is made from sputtered silicon and has a thickness of about 500 angstroms. A portion of metallic layer (113) makes physical contact with cathode (110) and is sandwiched between cathode (110) and protective layer (114). Protective layer (114) is positioned to shield metallic layer (113) from high transient voltages.
Abstract:
A field emission display apparatus includes a plurality of emitters formed on a substrate. Each of the emitters includes a titanium silicide nitride outer layer so that the emitters are less susceptible to degradation. A dielectric layer is formed on the substrate and the emitters, and an opening is formed in the dielectric layer surrounding each of the emitters. A conductive extraction grid is formed on the dielectric layer substantially in a plane defined by the emitters, and includes an opening surrounding each of the emitters. A cathodoluminescent faceplate having a planar surface is disposed parallel to the substrate.
Abstract:
In a field emission cold-cathode device, a cathode line or electrode is arranged on a glass substrate. An emitter is arranged on the cathode electrode and is formed of a conductive layer, a low-work-function material layer, and a tip layer stacked one on top of the other in this order. The emitter has a pyramid shape in which the tip layer has a sharp tip. The low-work-function material layer is made of a material having a work function of 4.0 eV or less. The tip layer is made of a material having a negative electron affinity and formed of granular bodies or linear bodies each having a diameter of 100 nm or less.