公开(公告)号：US20190341224A1

公开(公告)日：2019-11-07

申请号：US16402158

申请日：2019-05-02

Applicant: ASML Netherlands B.V.

Inventor： Peter Paul HEMPENIUS ,  Sven Antoin, Johan HOL ,  Maarten Frans, Janus KREMERS ,  Henricus Martinus, Johannes VAN DE GROES ,  Niels Johannes, Maria BOSCH ,  Marcel Koenraad, Marie BAGGEN

IPC: H01J37/20 ,  H01J37/09 ,  H01J37/317

Abstract: An e-beam apparatus is disclosed, the tool comprising an electron optics system configured to project an e-beam onto an object, an object table to hold the object, and a positioning device configured to move the object table relative to the electron optics system. The positioning device comprises a short stroke stage configured to move the object table relative to the electron optics system and a long stroke stage configured to move the short stroke stage relative to the electron optics system. The e-beam apparatus further comprises a magnetic shield to shield the electron optics system from a magnetic disturbance generated by the positioning device. The magnetic shield may be arranged between the positioning device and the electron optics system.

公开(公告)号：US20190339627A1

公开(公告)日：2019-11-07

申请号：US16511867

申请日：2019-07-15

Applicant: ASML NETHERLANDS B.V.

Inventor： Abraham Alexander SOETHOUDT ,  Thomas POIESZ

IPC: G03F7/20 ,  B05B15/68 ,  B05B15/656 ,  B01D53/34 ,  B01D53/56 ,  B01D53/79 ,  B05B13/02 ,  B05B13/04 ,  F23J15/00

Abstract: A lithographic apparatus includes a support table and a gas extraction system. The gas extraction system is configured to extract gas from a gap between the base surface of the support table and a substrate through at least one gas extraction opening when the substrate is being lowered onto the support table. The lithographic apparatus is configured such that gas is extracted from the gap at a first loading flow rate when the distance between the substrate and the support plane is greater than a threshold distance and gas is extracted from the gap at a second loading flow rate when the distance between the substrate and the support plane is less than the threshold distance, wherein the second loading flow rate is lower than the first loading flow rate.

公开(公告)号：US10459347B2

公开(公告)日：2019-10-29

申请号：US15453049

申请日：2017-03-08

Applicant: ASML Netherlands B.V.

Inventor： Dirk Ewoud Boonzajer Flaes ,  Stefan Michiel Witte ,  Kjeld Sijbrand Eduard Eikema

IPC: G03F7/20 ,  G01B11/00 ,  G01N21/47 ,  G01N21/956 ,  G02B21/16 ,  H05G2/00

Abstract: In an inspection apparatus, a target on the surface is illuminated with illuminating radiation that comprises first and second illuminating components. The illuminating components form one or more periodic illuminating patterns on the surface. A plurality of scattered radiation patterns formed by the illuminating radiation after scattering by the target is captured at a detector for a number of values of a controllable characteristic of at least one of the illuminating components. The captured radiation is then used to reconstruct data describing the target.

公开(公告)号：US20190324375A1

公开(公告)日：2019-10-24

申请号：US16457765

申请日：2019-06-28

Applicant: ASML Netherlands B.V.

Inventor： Jerry Johannes Martinus PEIJSTER

IPC: G03F7/20

Abstract: The invention relates to a substrate exposure system comprising a frame, a substrate support module for carrying a substrate, an exposure apparatus for exposing said substrate, and adjustment assembly for adjusting the position of the exposure apparatus with respect to the substrate support module. The adjustment assembly comprises a hydraulic actuator, a hydraulic generator and a conduit, wherein the conduit interconnects said hydraulic actuator and said hydraulic generator for forming a hydraulic system. The exposure apparatus, the frame, the adjustment assembly and the substrate support module are arranged as parts of a series of mechanically linked components. A first part of said series of mechanically linked components comprises the exposure apparatus, and a second part comprises the substrate support module. Said hydraulic actuator is arranged between said first part and said second part. Preferably the hydraulic actuator comprises a first bellows and the hydraulic generator comprises a second bellows.

公开(公告)号：US10455680B2

公开(公告)日：2019-10-22

申请号：US15057086

申请日：2016-02-29

Applicant: ASML Netherlands B.V.

Inventor： Georgiy Vaschenko ,  Peter Baumgart ,  Chirag Rajyaguru ,  Benjamin Sams ,  Armin Ridinger ,  Janine Kardokus

IPC: C22B3/00 ,  H05G2/00 ,  C22B9/04 ,  C22B25/08 ,  F27B17/00 ,  F27B17/02

Abstract: A deoxidation system for purifying target material for an EUV light source includes a furnace having a central region and a heater for heating the central region in a uniform manner. A vessel is inserted in the central region of the furnace, and a crucible is disposed within the vessel. A closure device covers an open end of the vessel to form a seal having vacuum and pressure capability. The system also includes a gas input tube, a gas exhaust tube, and a vacuum port. A gas supply network is coupled in flow communication with an end of the gas input tube and a gas supply network is coupled in flow communication with an end of the gas exhaust tube. A vacuum network is coupled in flow communication with one end of the vacuum port. A method and apparatus for purifying target material also are described.

公开(公告)号：US10451978B2

公开(公告)日：2019-10-22

申请号：US16010320

申请日：2018-06-15

Applicant: ASML NETHERLANDS B.V.

Inventor： Kaustuve Bhattacharyya ,  Simon Gijsbert Josephus Mathijssen ,  Marc Johannes Noot ,  Arie Jeffrey Den Boef ,  Mohammadreza Hajiahmadi ,  Farzad Farhadzadeh

IPC: G03B27/42 ,  G03F7/20 ,  G01B11/27

Abstract: A method including: for a metrology target, having a first biased target structure and a second differently biased target structure, created using a patterning process, obtaining metrology data including signal data for the first target structure versus signal data for the second target structure, the metrology data being obtained for a plurality of different metrology recipes and each metrology recipe specifying a different parameter of measurement; determining a statistic, fitted curve or fitted function through the metrology data for the plurality of different metrology recipes as a reference; and identifying at least two different metrology recipes that have a variation of the collective metrology data of the at least two different metrology recipes from a parameter of the reference that crosses or meets a certain threshold.

公开(公告)号：US10451973B2

公开(公告)日：2019-10-22

申请号：US14871795

申请日：2015-09-30

Applicant: ASML NETHERLANDS B.V.

Inventor： Bob Streefkerk ,  Sjoerd Nicolaas Lambertus Donders ,  Roelof Frederik De Graaf ,  Christiaan Alexander Hoogendam ,  Hans Jansen ,  Martinus Hendrikus Antonius Leenders ,  Paulus Martinus Maria Liebregts ,  Jeroen Johannes Sophia Maria Mertens ,  Jan-Gerard Cornelis Van Der Toorn ,  Michel Riepen

IPC: G02B27/52 ,  G03F7/20 ,  G03F7/30 ,  H01L21/027 ,  H01L21/67

Abstract: An immersion lithographic apparatus is provided with a liquid confinement structure which defines at least in part a space configured to contain liquid between the projection system and the substrate. In order to reduce the crossing of the edge of the substrate which is being imaged (which can lead to inclusion of bubbles in the immersion liquid), the cross-sectional area of the space in a plane parallel to the substrate is made as small as possible. The smallest theoretical size is the size of the target portion which is imaged by the projection system. In an embodiment, the shape of a final element of the projection system is also changed to have a similar size and/or shape in a cross-section parallel to the substrate to that of the target portion.

公开(公告)号：US20190317410A1

公开(公告)日：2019-10-17

申请号：US16462569

申请日：2017-11-17

Applicant: ASML NETHERLANDS B.V.

Inventor： Steven George HANSEN

IPC: G03F7/20 ,  G06F7/70

Abstract: A method including: obtaining a resist process dose sensitivity value for a patterning process; applying the resist process dose sensitivity value to a stochastic model providing values of a stochastic variable as a function of resist process dose sensitivity to obtain a value of the stochastic variable; and designing or modifying a parameter of the patterning process based on the stochastic variable value.

公开(公告)号：US10444644B2

公开(公告)日：2019-10-15

申请号：US16197461

申请日：2018-11-21

Applicant: ASML NETHERLANDS B.V.

Inventor： Timotheus Franciscus Sengers ,  Sjoerd Nicolaas Lambertus Donders ,  Hans Jansen ,  Arjen Boogaard

IPC: G03B27/42 ,  G03F7/20

Abstract: In a lithographic projection apparatus, a liquid supply system maintains liquid in a space between a projection system of the lithographic projection apparatus and a substrate. A sensor positioned on a substrate table, which holds the substrate, is configured to be exposed to radiation when immersed in liquid (e.g., under the same conditions as the substrate will be exposed to radiation). By having a surface of an absorption element of the sensor, that is to be in contact with liquid, formed of no more than one metal type, long life of the sensor may be obtained.

公开(公告)号：US10444637B2

公开(公告)日：2019-10-15

申请号：US16060195

申请日：2016-12-01

Applicant: ASML NETHERLANDS B.V.

Inventor： Johannes Jacobus Matheus Baselmans

IPC: G03F7/20 ,  G02B27/48

Abstract: An optical system comprising: an illumination system configured, to form a periodic illumination mode comprising radiation in a pupil plane of the optical system having a spatial intensity profile which is periodic in at least one direction, a measurement system configured to measure a dose of radiation which is received in an field plane of the optical system as a function of position in the field plane, and a controller configured to: select one or more spatial frequencies in the field plane at which variation in the received dose of radiation as a function of position is caused by speckle, and determine a measure of the variation of the received dose of radiation as a function of position at the selected one or more spatial frequencies, the measure of the variation in the received dose being indicative of speckle in the field plane.