公开(公告)号：US10908513B2

公开(公告)日：2021-02-02

申请号：US16026507

申请日：2018-07-03

Applicant: ASML Netherlands B.V.

Inventor： Marc Johannes Noot ,  Simon Gijsbert Josephus Mathijssen ,  Kaustuve Bhattacharyya ,  Jinmoo Byun ,  Hyun-Su Kim ,  Won-Jae Jang ,  Timothy Dugan Davis

IPC: G03F7/20

Abstract: Disclosed are a method, computer program and a metrology apparatus for measuring a process effect parameter relating to a manufacturing process for manufacturing integrated circuits on a substrate. The method comprises determining for a structure, a first quality metric value for a quality metric from a plurality of measurement values each relating to a different measurement condition while cancelling or mitigating for the effect of the process effect parameter on the plurality of measurement values and a second quality metric value for the quality metric from at least one measurement value relating to at least one measurement condition without cancelling or mitigating for the effect of the process effect parameter on the at least one measurement value. The process effect parameter value for the process effect parameter can then be calculated from the first quality metric value and the second quality metric value, for example by calculating their difference.

公开(公告)号：US20190004437A1

公开(公告)日：2019-01-03

申请号：US16010320

申请日：2018-06-15

Applicant: ASML NETHERLANDS B.V.

Inventor： Kaustuve Bhattacharyya ,  Simon Gijsbert Josephus Mathijssen ,  Marc Johannes Noot ,  Arie Jeffrey Den Boef ,  Mohammadreza Hajiahmadi ,  Farzad Farhadzadeh

IPC: G03F7/20 ,  G01B11/27

CPC classification number: G03F7/70625 ,  G01B11/272 ,  G01B2210/56 ,  G03F7/70058 ,  G03F7/70633

Abstract: A method including: for a metrology target, having a first biased target structure and a second differently biased target structure, created using a patterning process, obtaining metrology data including signal data for the first target structure versus signal data for the second target structure, the metrology data being obtained for a plurality of different metrology recipes and each metrology recipe specifying a different parameter of measurement; determining a statistic, fitted curve or fitted function through the metrology data for the plurality of different metrology recipes as a reference; and identifying at least two different metrology recipes that have a variation of the collective metrology data of the at least two different metrology recipes from a parameter of the reference that crosses or meets a certain threshold.

公开(公告)号：US10705437B2

公开(公告)日：2020-07-07

申请号：US16155424

申请日：2018-10-09

Applicant: ASML Netherlands B.V.

Inventor： Narjes Javaheri ,  Mohammadreza Hajiahmadi ,  Murat Bozkurt ,  Alberto Da Costa Assafrao ,  Marc Johannes Noot ,  Simon Gijsbert Josephus Mathijssen ,  Jin Lian

IPC: G03F7/20 ,  G01N21/47 ,  G01B11/24 ,  G01B11/30 ,  H01L23/544

Abstract: Disclosed is a method, and associated apparatuses, for measuring a parameter of interest relating to a structure having at least two layers. The method comprises illuminating the structure with measurement radiation and detecting scattered radiation having been scattered by said structure. The scattered radiation comprises normal and complementary higher diffraction orders. A scatterometry model which relates a scattered radiation parameter to at least a parameter of interest and an asymmetry model which relates the scattered radiation parameter to at least one asymmetry parameter are defined, the asymmetry parameter relating to one or more measurement system errors and/or an asymmetry in the target other than a misalignment between the two layers. A combination of the scatterometry model and asymmetry model is used to determine a system of equations, and the system of equations is then solved for the parameter of interest.

公开(公告)号：US10295913B2

公开(公告)日：2019-05-21

申请号：US13667174

申请日：2012-11-02

Applicant: ASML Netherlands B.V.

Inventor： Scott Anderson Middlebrooks ,  Rene Andreas Maria Pluijms ,  Martyn John Coogans ,  Marc Johannes Noot

IPC: G03F7/20

Abstract: An inspection method, and corresponding apparatus, enables classification of pupil images according to a process variable. The method comprises acquiring diffraction pupil images of a plurality of structures formed on a substrate during a lithographic process. A process variable of the lithographic process varies between formation of the structures, the variation of the process variable resulting in a variation in the diffraction pupil images. The method further comprises determining at least one discriminant function for the diffraction pupil images, the discriminant function being able to classify the pupil images in terms of the process variable.

公开(公告)号：US12013647B2

公开(公告)日：2024-06-18

申请号：US17419648

申请日：2019-12-24

Applicant: ASML Netherlands B.V.

Inventor： Simon Gijsbert Josephus Mathijssen ,  Marc Johannes Noot ,  Kaustuve Bhattacharyya ,  Arie Jeffrey Den Boef ,  Grzegorz Grzela ,  Timothy Dugan Davis ,  Olger Victor Zwier ,  Ralph Timotheus Huijgen ,  Peter David Engblom ,  Jan-Willem Gemmink

IPC: G03F7/00 ,  G01N21/47 ,  G06T7/00

CPC classification number: G03F7/70633 ,  G01N21/47 ,  G06T7/0004 ,  G01N2021/4735 ,  G06T2207/30148

Abstract: A method provides the steps of receiving an image from a metrology tool, determining individual units of said image and discriminating the units which provide accurate metrology values. The images are obtained by measuring the metrology target at multiple wavelengths. The discrimination between the units, when these units are pixels in said image, is based on calculating a degree of similarity between said units.

公开(公告)号：US10451978B2

公开(公告)日：2019-10-22

申请号：US16010320

申请日：2018-06-15

Applicant: ASML NETHERLANDS B.V.

Inventor： Kaustuve Bhattacharyya ,  Simon Gijsbert Josephus Mathijssen ,  Marc Johannes Noot ,  Arie Jeffrey Den Boef ,  Mohammadreza Hajiahmadi ,  Farzad Farhadzadeh

IPC: G03B27/42 ,  G03F7/20 ,  G01B11/27

Abstract: A method including: for a metrology target, having a first biased target structure and a second differently biased target structure, created using a patterning process, obtaining metrology data including signal data for the first target structure versus signal data for the second target structure, the metrology data being obtained for a plurality of different metrology recipes and each metrology recipe specifying a different parameter of measurement; determining a statistic, fitted curve or fitted function through the metrology data for the plurality of different metrology recipes as a reference; and identifying at least two different metrology recipes that have a variation of the collective metrology data of the at least two different metrology recipes from a parameter of the reference that crosses or meets a certain threshold.

公开(公告)号：US20190107785A1

公开(公告)日：2019-04-11

申请号：US16155424

申请日：2018-10-09

Applicant: ASML Netherlands B.V.

Inventor： Narjes JAVAHERI ,  Mohammadreza Hajiahmadi ,  Murat Bozkurt ,  Alberto Da Costa Assafrao ,  Marc Johannes Noot ,  Simon Gijsbert Josephus Mathijssen ,  Jin Lian

IPC: G03F7/20 ,  G01B11/24 ,  G01B11/30 ,  G01N21/47

Abstract: Disclosed is a method, and associated apparatuses, for measuring a parameter of interest relating to a structure having at least two layers. The method comprises illuminating the structure with measurement radiation and detecting scattered radiation having been scattered by said structure. The scattered radiation comprises normal and complementary higher diffraction orders. A scatterometry model which relates a scattered radiation parameter to at least a parameter of interest and an asymmetry model which relates the scattered radiation parameter to at least one asymmetry parameter are defined, the asymmetry parameter relating to one or more measurement system errors and/or an asymmetry in the target other than a misalignment between the two layers. A combination of the scatterometry model and asymmetry model is used to determine a system of equations, and the system of equations is then solved for the parameter of interest.

公开(公告)号：US20130135600A1

公开(公告)日：2013-05-30

申请号：US13667174

申请日：2012-11-02

Applicant: ASML Netherlands B.V.

Inventor： Scott Anderson MIDDLEBROOKS ,  Rene Andreas Maria Pluijms ,  Martyn John Coogans ,  Marc Johannes Noot

IPC: G03B27/54

CPC classification number: G03F7/70625 ,  G03F7/70525 ,  G03F7/70641

Abstract: An inspection method, and corresponding apparatus, enables classification of pupil images according to a process variable. The method comprises acquiring diffraction pupil images of a plurality of structures formed on a substrate during a lithographic process. A process variable of the lithographic process varies between formation of the structures, the variation of the process variable resulting in a variation in the diffraction pupil images. The method further comprises determining at least one discriminant function for the diffraction pupil images, the discriminant function being able to classify the pupil images in terms of the process variable.

Abstract translation: 检查方法和相应的装置能够根据过程变量分类瞳孔图像。 该方法包括在光刻工艺期间获取在基板上形成的多个结构的衍射光瞳图像。 光刻过程的过程变量在结构的形成之间变化，过程变量的变化导致衍射光瞳图像的变化。 该方法还包括确定用于衍射光瞳图像的至少一个判别函数，判别函数能够根据过程变量对瞳孔图像进行分类。