Abstract:
The dynamic range of operation of a differential transconductance input stage is reduced when the amplitude of the input signal decreases, thus reducing the level of the noise that is generated by the input stage. A DC signal representative of the sensed amplitude of the input signal is employed for either reducing the value of a common, emitter-degenerating resistance or of the bias current that is forced in the two branches of the differential input stage.
Abstract:
A method of filtering digital signals having a high dynamic range includes splitting the sampled input signal into at least two portions addressing each of the portions to a respective program filter, and performing each filtering operation in parallel and independently, and reconstituting an output signal by summing together the digital outputs from each filter.
Abstract:
A dual sourced voltage supply circuit for use with a flash EPROM or the like and comprising output voltage circuitry including an input for receiving a control signal determining which of two voltage supplies is used to provide an output of the dual sourced voltage supply circuit. The output voltage is provided by one of the two voltage supplies by means of a controllable conductive path connected between one voltage supply and an output node of the circuit. Such controllable conductive path comprises, in series, a first MOSFET transistor connected to the voltage supply and a second MOSFET transistor connected to the output node, both transistors are of the same conductivity type and are arranged to be activated in dependence on the input of the output voltage circuitry; moreover, each transistor has a body connection connected to a respective channel electrode; the body connections are arranged to prevent charge injection occurring between the other channel electrode of the same transistor and the body of the second and first transistor respectively.
Abstract:
A circuit architecture for testing a programmable logic matrix, e.g., the PLA type, has a group of input latches and a corresponding group of output latches connected to the matrix, and test information paths structured with at least one data bus and one address bus. The input latch and the output latch are connected electrically to the test data bus and to the test address bus to allow matrix testing with considerable time saving over known circuitry.
Abstract:
A method employing a test structure identical to the memory array whose gate oxide or interpoly dielectric quality is to be determined, except for the fact that the cells are connected electrically parallel to one another. The test structure is subjected to electrical stress of such a value and polarity as to extract electrons from the floating gate of the defective-gate-oxide or defective-interpoly-dielectric cells and so modify the characteristic of the cell while leaving the charge of the non-defective cells unchanged. In this way, only the threshold of the defective cells is altered. A subthreshold voltage is then applied to the test structure, and the drain current through the cells, which is related to the presence of at least one defective cell in the structure, is measured. Measurement and analysis of the current-voltage characteristic provides for determining the number of defective cells. The method is suitable for in-line quality control of the gate oxide or interpoly dielectric of EPROM, EEPROM and flash-EEPROM memories.
Abstract:
A voltage multiplier includes a first charge transfer capacitor designed to take and transfer electrical charges from the input terminal to the output terminal, a second capacitor for charge storage connected between the output terminal and ground and an output voltage stabilization circuit. The output voltage stabilization circuit includes an integrator designed to generate a continuous voltage corresponding to the difference between a reference voltage and the output voltage of the voltage multiplier. The continuous voltage is applied to one terminal of said charge transfer capacitor so that the potential at the other terminal of the capacitor changes proportionally to the output voltage of the voltage multiplier.
Abstract:
A read circuit for memory cells which has two legs, each having, in cascade with one another, an electronic switch (SW1,SW2), an active element (T1,T2), feedback connected to the active element in the other leg to jointly produce a voltage amplifier, and a switch load element (L1,L2). Each active element is driven through a high-impedance input circuit element.
Abstract:
An improved fabrication process employing relatively non-critical masks permits the fabrication of high density electrically programmable and erasable EEPROM or FLASH-EPROM devices. In practice the novel process permits the fabrication of a contactless, cross-point array providing for a more comfortable "pitch" of bitline metal-definition while realizing a cell layout with a gate structure which extends laterally over adjacent portions of field oxide, thus establishing an appropriate capacitive coupling between control and floating gates. Two alternative embodiments are described.
Abstract:
An integrated telephone interface circuit for driving a telephone line includes a line current sensor and a phase converter, both associated with an output stage connected to the telephone line. The circuit is equipped with a protection device against the generation of spurious signals including a comparator connected between the converter and the output stage, a control and monitoring circuit linked operatively to an output of the comparator, and a plurality of switches associated with the input side of the converter, as well as with the current sensor and the output stage. The switches are linked operatively to respective outputs of the control and monitoring circuit to reverse polarity of the line supply upon a predetermined threshold value for the comparator being exceeded.
Abstract:
A voltage regulator for electrically programmable, non-volatile memory devices has an output terminal connected to a power supply line for programming the state of at least one memory element through at least one selection circuit. At least first and second resistive elements are connected between first and second terminals of a voltage supply. At least a first circuit is matched to the at least one selection circuit, and the first circuit is coupled serially with the resistive elements between the two terminals of the voltage supply. At least one control current generator is connected between one of the first and second voltage supply terminals and a node linking to one of the resistive elements, and the current of the controlled current generator is controlled to be a function of current through the at least one selection circuit. An operational amplifier has an inverting input and a non-inverting input, and the non-inverting input is connected to a node linking to at least one of the resistive elements. An output terminal of the operational amplifier is the regulator output terminal to which the inverting input is coupled.