公开(公告)号：US20210133061A1

公开(公告)日：2021-05-06

申请号：US16670798

申请日：2019-10-31

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Brent S. Haukness ,  John Eric Linstadt ,  Scott C. Best

IPC: G06F11/20 ,  G11C29/52 ,  G11C11/4093

Abstract: A memory module is disclosed. The memory module includes a substrate, and respective first, second and third memory devices. The first memory device is of a first type disposed on the substrate and has addressable storage locations. The second memory device is also of the first type, and includes storage cells dedicated to store failure address information associated with defective storage locations in the first memory device. The third memory device is of the first type and includes storage cells dedicated to substitute as storage locations for the defective storage locations.

公开(公告)号：US10983933B2

公开(公告)日：2021-04-20

申请号：US16840341

申请日：2020-04-04

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Craig E. Hampel

IPC: G06F13/16 ,  G11C7/10 ,  G11C5/04 ,  G11C11/4096 ,  G06F13/40 ,  G11C11/408 ,  G11C11/4093

Abstract: A memory module includes a substrate, plural memory devices, and a buffer. The plural memory devices are organized into at least one rank, each memory device having plural banks. The buffer includes a primary interface for communicating with a memory controller and a secondary interface coupled to the plural memory devices. For each bank of each rank of memory devices, the buffer includes data buffer circuitry and address buffer circuitry. The data buffer circuitry includes first storage to store write data transferred during a bank cycle interval (tRR). The address buffer circuitry includes second storage to store address information corresponding to the data stored in the first storage.

公开(公告)号：US10964361B2

公开(公告)日：2021-03-30

申请号：US15837475

申请日：2017-12-11

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Ely K. Tsern

IPC: G11C7/10

Abstract: A memory component includes a memory bank comprising a plurality of storage cells and a data interface block configured to transfer data between the memory component and a component external to the memory component. The memory component further includes a plurality of column interface buses coupled between the memory bank and the data interface block, wherein a first column interface bus of the plurality of column interface buses is configured to transfer data between a first storage cell of the plurality of storage cells and the data interface block during a first access operation and wherein a second column interface bus of the plurality of column interface buses is configured to transfer the data between the first storage cell and the data interface block during a second access operation.

公开(公告)号：US20210089237A1

公开(公告)日：2021-03-25

申请号：US17247167

申请日：2020-12-02

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Thomas Vogelsang

IPC: G06F3/06 ,  G11C7/10 ,  G11C29/02 ,  G06F11/10

Abstract: An memory component includes a memory bank and a command interface to receive a read-modify-write command, having an associated read address indicating a location in the memory bank and to either access read data from the location in the memory bank indicated by the read address after an adjustable delay period transpires from a time at which the read-modify-write command was received or to overlap multiple read-modify-write commands. The memory component further includes a data interface to receive write data associated with the read-modify-write command and an error correction circuit to merge the received write data with the read data to form a merged data and write the merged data to the location in the memory bank indicated by the read address.

公开(公告)号：US20210049115A1

公开(公告)日：2021-02-18

申请号：US17009102

申请日：2020-09-01

Applicant: Rambus Inc.

Inventor： Craig E. Hampel ,  Frederick A. Ware

IPC: G06F13/16 ,  G06F13/42 ,  G11C5/04 ,  G11C7/10 ,  H05K1/18 ,  G06F12/1081 ,  G06F13/28

Abstract: A memory module having reduced access granularity. The memory module includes a substrate having signal lines thereon that form a control path and first and second data paths, and further includes first and second memory devices coupled in common to the control path and coupled respectively to the first and second data paths. The first and second memory devices include control circuitry to receive respective first and second memory access commands via the control path and to effect concurrent data transfer on the first and second data paths in response to the first and second memory access commands.

公开(公告)号：US20210041932A1

公开(公告)日：2021-02-11

申请号：US16947973

申请日：2020-08-26

Applicant: Rambus Inc.

Inventor： Dinesh Patil ,  Amir Amirkhany ,  Farrukh Aquil ,  Kambiz Kaviani ,  Frederick A. Ware

IPC: G06F1/324 ,  G11C7/10 ,  G11C7/22 ,  G11C11/4093 ,  G11C11/4076 ,  G06F1/3234 ,  G06F1/3287 ,  G06F5/06

Abstract: Embodiments generally relate to a memory device. In one embodiment, the memory device includes a clock receiver circuit that receives an external clock signal and provides an internal clock signal. The memory device also includes a delay-locked loop circuit (DLL) having an input, and a circuit that receives the internal clock signal. The circuit selects which pulses of the internal clock signal are applied to the input of the DLL, such that no more than two clock pulses selected from at least three consecutive pulses of the external clock signal are applied to the input of the DLL during a predetermined interval. In another embodiment, a method includes receiving an external clock signal at a clock receiver circuit, receiving an internal clock signal from the clock receiver circuit, and selecting which pulses of the internal clock signal are applied to an input of a DLL, where no more than two clock pulses selected from at least three consecutive pulses of the external clock signal are applied to the input of the DLL during a predetermined interval.

公开(公告)号：US10892725B1

公开(公告)日：2021-01-12

申请号：US16700689

申请日：2019-12-02

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Carl W. Werner ,  John Eric Linstadt

IPC: H03F3/16 ,  H03F1/02 ,  H03F19/00 ,  H03F1/30 ,  G06N10/00

Abstract: A signal amplifier is distributed between first and second IC devices and includes a low-power input stage disposed within the first IC device, a bias-current source disposed within the second IC device and an output stage disposed within the second IC device. The output stage includes a resistance disposed within the second IC device and having a first terminal coupled to a drain terminal of a transistor within the input stage via a first signaling line that extends between the first and second IC devices.

公开(公告)号：US10892001B2

公开(公告)日：2021-01-12

申请号：US16692069

申请日：2019-11-22

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Brent Haukness

IPC: G06F12/00 ,  G11C11/406 ,  G06F13/16

Abstract: The present embodiments provide a system that supports self-refreshing operations in a memory device. During operation, the system transitions the memory device from an auto-refresh state, wherein a memory controller controls refreshing operations for the memory device, to a self-refresh state, wherein the memory device controls the refreshing operations. While the memory device is in the self-refresh state, the system sends progress information for the refreshing operations from the memory device to the memory controller. Next, upon returning from the self-refresh state to the auto-refresh state, the system uses the progress information received from the memory device to control the sequencing of subsequent operations by the memory controller.

公开(公告)号：US10860253B2

公开(公告)日：2020-12-08

申请号：US16371345

申请日：2019-04-01

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Thomas Vogelsang

IPC: G11C7/10 ,  G11C29/02 ,  G11C11/10 ,  G11C29/04 ,  G06F3/06 ,  G06F11/10

Abstract: An memory component includes a memory bank and a command interface to receive a read-modify-write command, having an associated read address indicating a location in the memory bank and to either access read data from the location in the memory bank indicated by the read address after an adjustable delay period transpires from a time at which the read-modify-write command was received or to overlap multiple read-modify-write commands. The memory component further includes a data interface to receive write data associated with the read-modify-write command and an error correction circuit to merge the received write data with the read data to form a merged data and write the merged data to the location in the memory bank indicated by the read address.

公开(公告)号：US10831685B2

公开(公告)日：2020-11-10

申请号：US16546694

申请日：2019-08-21

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Amir Amirkhany ,  Suresh Rajan ,  Mohammad Hekmat ,  Dinesh Patil

IPC: G06F13/16 ,  G11C7/10 ,  G11C8/18 ,  G11C11/419 ,  G11C7/22 ,  G11C11/4076 ,  G11C11/4093 ,  G11C11/4096 ,  G11C5/02 ,  G06F13/40 ,  G11C29/02

Abstract: A semiconductor memory system includes a first semiconductor memory die and a second semiconductor memory die. The first semiconductor memory die includes a primary data interface to receive an input data stream during write operations and to deserialize the input data stream into a first plurality of data streams, and also includes a secondary data interface, coupled to the primary data interface, to transmit the first plurality of data streams. The second semiconductor memory die includes a secondary data interface, coupled to the secondary data interface of the first semiconductor memory die, to receive the first plurality of data streams.