Abstract:
A method for erasing an electrically programmable and erasable non-volatile memory cell having a control electrode, an electrically-insulated electrode and a first electrode. The method provides for coupling the control electrode to a first voltage supply and coupling the first electrode to a second voltage supply. The first voltage supply and the second voltage supply are suitable to cause tunneling of electric charges between the electrically-insulated electrode and the first electrode. The method also provides for a constant current to flow between the second voltage supply and the first electrode of the memory cell for at least part of an erasing time of the memory cell, the constant current having a prescribed value.
Abstract:
A reading circuit for a multibit register has a differential stage that is configured as an output latch by one of two control phases required by the circuit after the discrimination phase of a reading cycle a single NOR gate, the output of which is provided with anti-overshoot means, enables the performance of a reading cycle. An input of the differential stage, is connectable to a common sensing line to which all the cells of the register are coupled in an OR configuration, while the other input is connectable to a reference current generator.
Abstract:
A cell library for the design of integrated circuits, for example using CMOS technology, includes cells which define circuit modules in rectangular areas having an identical side. Two traces are provided which extend at right-angles to the identical side and which define strips for connection to the supply, at least one of which is in contact with the source regions of MOS transistors of a CMOS pair. In order to permit the design of integrated circuits in which the analog parts are insensitive to the noise induced in the substrate by the digital parts and in which it is possible to reduce the current absorption of the digital parts in stand-by mode, the cell library also provides a group of cells in which there is provided at least one additional trace which defines an additional strip for connection to the outside and which is in contact with the body regions of the MOS transistors of the CMOS pair.
Abstract:
A negative charge pump circuit having a plurality of charge pump stages. Each charge pump stage has an input node and an output node and includes a pass transistor and a first coupling capacitor. The pass transistor has a first terminal connected to the input node, a second terminal connected to the output node and a control terminal connected to an internal node of the charge pump stage. The first coupling capacitor has a first plate connected to said output node and a second plate connected to a respective clock signal. Negative voltage regulation means are provided for regulating a negative output voltage on an output node of the negative charge pump circuit to provide a fixed negative voltage value. The negative charge pump circuit includes at least one negative voltage limiting means electrically coupling said output node of the negative charge pump circuit with the internal node of the last charge pump stage of the negative charge pump circuit. The negative voltage limiting means limits the negative voltage on the internal node and on the output node of said last charge pump stage.
Abstract:
A regulating circuit for the output voltage of a voltage booster, of the type which comprises a first charge transfer capacitor adapted to draw electric charges from the supply terminal and transfer them to the output terminal, through electronic switches controlled by non-overlapped complementary phase signals, and a second charge storage capacitor connected between the output terminal and ground, further comprises an error amplifier which generates, during one of the operational phases, a DC voltage corresponding to the difference between a reference voltage and a divided voltage of the output voltage of the voltage booster; this DC voltage is applied directly to one end of the transfer capacitor.
Abstract:
A fuzzy device for image noise reduction, includes an interface adapted to retrieve the gray level of a pixel to be processed of an image and of neighbouring pixels; a difference circuit connected to the interface and adapted to generate a difference of the gray levels between said neighbouring pixels and said pixels to be processed; a fuzzy flat area smoothing circuit connected to the difference circuit and adapted to perform a low-pass smoothing of an almost homogeneous region defined by said pixel and by said neighbouring pixels; an edge preserving smoothing circuit connected to the difference circuit and adapted to perform low-pass filtering on a high-frequency information region defined by the pixel and by the neighbouring pixels; a region voter circuit connected to the interface and adapted to give a measure for considering whether the region defined by the pixel and the neighbouring pixels is almost homogeneous; and a soft switching circuit connected to the outputs of the smoothing circuit and adapted to perform the weighting of the outputs of the smoothing circuit on the basis of the measure.
Abstract:
A reading circuit includes, for each bit line of a matrix of memory cells, a controllable switching element which can connect the bit line to a voltage source in response to a control signal applied to a control terminal thereof, a detector stage sensitive to the flow of current through the bit line, and a driving stage including two field-effect transistors connected in the inverter configuration with the input of the inverter connected to the bit line and with the output of the inverter connected to the control terminal of the controllable switching element. In order to charge the capacitance associated with the bit line rapidly but without causing oscillatory phenomena, the driving stage includes circuitry for reducing the gain of the feedback loop formed by the inverter and by the controllable switching element.
Abstract:
A programmable cell and a multibit register composed of a plurality of such cells, specifically for performing a coincidence check between a certain code permanently recorded in the cell or cells and a logic configuration present on a pair or on a plurality of pairs of control lines are disclosed. Each cell has two branches connected in OR configuration to a common sensing line of the cell or of the multibit register. The logic states to be tested for coincidence are applied in a complemented form through a pair of lines to each cell, that is to the two branches of the cell. Each cell, permanently programmed in one or the other of its branches, intrinsically performs a comparison between its permanently programmed logic configuration and the configuration of the complemented control lines associated therewith. A great simplification is achieved in the overall circuitry of a redundance or reconfiguration system.
Abstract:
An erase voltage control circuit for an electrically erasable non-volatile memory cell having a control electrode and a first electrode. The circuit includes negative voltage generator means for generating a negative erase voltage to be supplied to the control electrode of the memory cell and means for electrically coupling the first electrode to a voltage supply. The circuit further includes control means for selectively deactivating the negative voltage generator means when a current supplied by the voltage supply to the first electrode of the memory cell reaches a predetermined value.
Abstract:
In a flash-EEPROM array, the cells in each row are grouped into pairs connected to the same diffused source line and to two different diffused bit lines, and the adjacent pairs of cells are spaced so that, in each row, only one cell is connected to a respective diffused bit line. The array presents global bit lines in the form of metal lines, and each connected to a plurality of diffused local bit lines, at least one for each sector. For each sector and each global bit line, there are provided two diffused local bit lines connected to the same respective global bit line by selection transistors so that only one local bit line is biased each time.