Method for siliconizing carbon-containing materials
    52.
    发明授权
    Method for siliconizing carbon-containing materials 有权
    含碳材料硅化方法

    公开(公告)号:US07763224B2

    公开(公告)日:2010-07-27

    申请号:US11712401

    申请日:2007-03-01

    IPC分类号: C01B31/36 B05C3/09

    摘要: A method for treating workpieces that consist of porous carbon material with liquid silicon with the formation of silicon carbide, comprising the steps: Preheating porous carbon workpieces under inert gas to the selected operating temperature TB1, feeding liquid silicon to the porous carbon workpieces at an operating pressure pB2 and an operating temperature TB2, and impregnating the porous carbon workpieces with liquid silicon, reaction of the liquid silicon in the workpiece at a temperature TB3 with the formation of silicon carbide that consists of carbon and silicon, gassing the workpiece with inert gas and cooling from the operating temperature TB3 to the conditioning temperature Tk, cooling the workpieces to room temperature, the temperature TB3 being greater than or equal to the temperature TB2, and the workpiece in step d of the method no longer being in contact with liquid silicon outside of the workpiece.

    摘要翻译: 一种用于处理由多孔碳材料与液态硅组成的工件的碳化硅形成方法,包括以下步骤:将惰性气体下的多孔碳工件预热至所选择的工作温度TB1,在操作中将液态硅供给到多孔碳工件 压力pB2和工作温度TB2,并用液态硅浸渍多孔碳工件,工件中液态硅在温度TB3下反应,形成由碳和硅组成的碳化硅,用惰性气体气化工件, 从工作温度TB3到调节温度Tk的冷却,将工件冷却至室温,温度TB3大于或等于温度TB2,并且该方法的步骤d中的工件不再与外部的液态硅接触 的工件。

    Method and Device For Siliconization of Carbon-Containing Materials
    53.
    发明申请
    Method and Device For Siliconization of Carbon-Containing Materials 有权
    含碳材料硅化的方法和装置

    公开(公告)号:US20090149308A1

    公开(公告)日:2009-06-11

    申请号:US12212452

    申请日:2008-09-17

    IPC分类号: C04B35/52 B01J8/04

    摘要: Method for treatment of workpieces of porous carbon material with liquid silicon with the formation of silicon carbide, comprising the following steps: preheating of porous carbon workpieces under an inert gas to a selected operating temperature TB1, delivery of liquid silicon to the porous carbon workpieces at an operating pressure pB2 and an operating temperature TB2 and impregnation of the porous carbon workpieces with liquid silicon, reaction of the liquid silicon in the workpiece at a temperature TB3 with formation of silicon carbide from carbon and silicon, gassing of the workpieces with inert gas, and cooling from the operating temperature TB3 to a conditioning temperature Tk, cooling of workpieces to room temperature, in step c the delivery of silicon and transport of the workpieces taking place over preferably cylindrical rolls which are porous at least in the exterior region and which are pivoted, and their speed of rotation determining the residence time for the delivery of silicon in step c, and the temperature TB3 being greater than or equal to the temperature TB2, and the workpieces for process step d no longer being in contact with liquid silicon outside the workpieces.

    摘要翻译: 用液态硅处理碳化硅的多孔碳材料工件的方法,包括以下步骤:将惰性气体下的多孔碳工件预热到选定的工作温度TB1,将液态硅输送到多孔碳工件上 操作压力pB2和操作温度TB2,并且用液态硅浸渍多孔碳工件,在温度TB3下工件中的液态硅与碳和硅形成碳化硅的反应,用惰性气体气化工件, 并从工作温度TB3到调节温度Tk的冷却,工件冷却至室温,步骤c中硅的输送和工件的运输,优选至少在外部区域是多孔的圆柱形辊, 枢转,并且其旋转速度决定了运送的停留时间 步骤c中的硅,温度TB3大于或等于温度TB2,并且处理步骤d的工件不再与工件外部的液态硅接触。