Composite materials and applications thereof and methods of making composite materials
    3.
    发明授权
    Composite materials and applications thereof and methods of making composite materials 有权
    复合材料及其应用及制备复合材料的方法

    公开(公告)号:US09458632B2

    公开(公告)日:2016-10-04

    申请号:US13803344

    申请日:2013-03-14

    摘要: Various embodiments of the present invention provide composite materials and methods of making the same. In some embodiments, the composite materials comprise high temperature resistant composite materials and methods of making high temperature resistant composite materials. In some embodiments, high temperature resistant composite materials of the present invention can be fabricated into landing pads, components used in landing pads to provide a structure to support the take-off and landing of aircraft, roadways or similar travel paths for heavy equipment, and/or components used in roadways or similar travel paths for heavy equipment. In one embodiment, a composite material comprises an inorganic ceramic matrix having a top surface in facing opposition to a bottom surface and at least one side surface between the top surface and the bottom surface, a first open weave fabric comprising a plurality of fibers disposed in the matrix proximate the bottom surface of the matrix, and at least one additional open weave fabric comprising a plurality of fibers disposed in the matrix between the first open weave fabric and the top surface of the matrix, wherein the at least one additional open weave fabric is positioned closer to the bottom surface than the top surface of the matrix.

    摘要翻译: 本发明的各种实施方式提供复合材料及其制造方法。 在一些实施方案中,复合材料包括耐高温复合材料和制备耐高温复合材料的方法。 在一些实施方案中,本发明的耐高温复合材料可以制成着陆​​垫,用于着陆垫中的部件,以提供支撑用于重型设备的飞行器,道路或类似行进路径的起飞和着陆的结构,以及 /或用于重型设备的道路或类似行驶路径中的部件。 在一个实施方案中,复合材料包括无机陶瓷基体,其具有面向底表面的顶表面和顶表面与底表面之间的至少一个侧表面,第一开口编织织物,其包括多个布置在 所述基体接近所述基体的底表面,以及至少一个额外的开放编织织物,其包含布置在所述基质中的所述第一开口编织织物和所述基质的顶表面之间的多个纤维,其中所述至少一个另外的开放编织织物 位于比矩阵的顶表面更靠近底表面的位置。

    Polycrystalline diamond compact including a substrate having a raised interfacial surface bonded to a polycrystalline diamond table, and applications therefor
    5.
    发明授权
    Polycrystalline diamond compact including a substrate having a raised interfacial surface bonded to a polycrystalline diamond table, and applications therefor 有权
    包括具有结合到多晶金刚石台上的凸起界面的基底的多晶金刚石压块及其应用

    公开(公告)号:US08820442B2

    公开(公告)日:2014-09-02

    申请号:US13037548

    申请日:2011-03-01

    IPC分类号: E21B10/36

    摘要: In various embodiments, a polycrystalline diamond compact (“PDC”) comprises a substrate including an interfacial surface having a raised region. In an embodiment, a PDC comprises a substrate including an interfacial surface having a generally cylindrical raised region and a peripheral region extending about the generally cylindrical raised region. The generally cylindrical raised region extends to a height above the peripheral region of about 450 μm or less. The PDC includes a PCD table bonded to the interfacial surface of the substrate. The PCD table includes an upper surface and at least one peripheral surface, and includes a plurality of bonded diamond grains defining interstitial regions. At least a portion of the interstitial regions includes a metallic constituent therein. In another embodiment, instead of employing a generally cylindrical raised region, the interfacial surface may include a plurality of raised arms extending above the face. Each raised arm extends radially and circumferentially.

    摘要翻译: 在各种实施方案中,多晶金刚石复合体(“PDC”)包括包含具有凸起区域的界面的基材。 在一个实施例中,PDC包括基底,其包括具有大致圆柱形凸起区域的界面表面和围绕大致圆柱形凸起区域延伸的周边区域。 大致圆柱形的凸起区域延伸到高于约450μm或更小的周边区域的高度。 PDC包括结合到基板的界面的PCD台。 PCD台包括上表面和至少一个外围表面,并且包括限定间隙区域的多个结合金刚石颗粒。 间隙区域的至少一部分在其中包括金属成分。 在另一个实施例中,代替采用大致圆柱形的凸起区域,界面可以包括在面上方延伸的多个凸起臂。 每个凸起的臂都径向和圆周地延伸。

    Silicon nitride circuit board
    10.
    发明授权
    Silicon nitride circuit board 失效
    氮化硅电路板

    公开(公告)号:US5998000A

    公开(公告)日:1999-12-07

    申请号:US970813

    申请日:1997-11-14

    摘要: This invention provides a silicon nitride circuit board in which a metal circuit plate is bonded to a high thermal conductive silicon nitride substrate having a thermal conductivity of not less than 60 W/m K, wherein a thickness D.sub.s of the high thermal conductive silicon nitride substrate and a thickness D.sub.M of the metal circuit plate satisfy a relational formula D.sub.s .ltoreq.2D.sub.M. The silicon nitride circuit board is characterized in that, when a load acts on the central portion of the circuit board which is held at a support interval of 50 mm, a maximum deflection is not less than 0.6 mm until the silicon nitride substrate is broken. The silicon nitride circuit board is characterized in that, when an anti-breaking test is performed to the circuit board which is held at a support interval of 50 mm, an anti-breaking strength is not less than 500 MPa. The metal circuit plate or a circuit layer are integrally bonded on the silicon nitride substrate by a direct bonding method, an active metal brazing method, or an metalize method. According to the silicon nitride circuit board with the above arrangement, high thermal conductivity and excellent heat radiation characteristics can be obtained, and heat cycle resistance characteristics can be considerably improved.

    摘要翻译: 本发明提供了一种氮化硅电路板,其中金属电路板结合到导热率不小于60W / m K的高导热氮化硅衬底上,其中高导热氮化硅衬底的厚度Ds 并且金属电路板的厚度DM满足关系式Ds 2DM。 氮化硅电路板的特征在于,当负载作用在保持在50mm的支撑间隔的电路板的中心部分时,直到氮化硅衬底断裂为止,最大偏转不小于0.6mm。 氮化硅电路板的特征在于,当对以50mm的支撑间隔保持的电路板进行防破坏试验时,抗断强度不低于500MPa。 金属电路板或电路层通过直接接合法,活性金属钎焊法或金属化法一体接合在氮化硅衬底上。 根据具有上述结构的氮化硅电路板,可以获得高导热性和优异的散热特性,并且可以显着提高热循环电阻特性。