公开(公告)号：US20130137842A1

公开(公告)日：2013-05-30

申请号：US13479036

申请日：2012-05-23

Applicant: Bang Lin Lee ,  Jeong il Park ,  Jong Won Chung

Inventor： Bang Lin Lee ,  Jeong il Park ,  Jong Won Chung

IPC: C08G75/32 ,  C07D417/14

CPC classification number: H01L51/0036 ,  C07D417/14 ,  C07D421/14 ,  C08G61/122 ,  C08G61/123 ,  C08G61/126 ,  C08G75/32 ,  C08G2261/1412 ,  C08G2261/1424 ,  C08G2261/226 ,  C08G2261/3223 ,  C08G2261/3229 ,  C08G2261/3243 ,  C08G2261/411 ,  C08G2261/92 ,  H01L51/0043 ,  H01L51/0069 ,  H01L51/0074

Abstract: An organic semiconductor compound may be represented by the above Chemical Formula 1 or Chemical Formula 2, and an organic thin film may include the organic semiconductor compound according to Chemical Formula 1 or 2.

Abstract translation: 有机半导体化合物可以由上述化学式1或化学式2表示，有机薄膜可以包括根据化学式1或2的有机半导体化合物。

公开(公告)号：US20120126207A1

公开(公告)日：2012-05-24

申请号：US13166425

申请日：2011-06-22

Applicant: Jong Won Chung ,  Do-Hwan Kim ,  Bang Lin Lee ,  Jeong il Park ,  Yong Wan Jin ,  Sang Yoon Lee

Inventor： Jong Won Chung ,  Do-Hwan Kim ,  Bang Lin Lee ,  Jeong il Park ,  Yong Wan Jin ,  Sang Yoon Lee

IPC: H01L51/10 ,  C08F228/06 ,  H01B1/12

CPC classification number: H01L51/0036 ,  C08G2261/162 ,  C08G2261/1646 ,  C08G2261/3223 ,  C08G2261/3229 ,  C08G2261/3243 ,  C08G2261/91 ,  C08G2261/92 ,  C08G2261/94 ,  C08G2261/95 ,  C08K3/10 ,  C08K3/16 ,  H01L51/0069 ,  H01L51/0541 ,  H01L51/0545 ,  C08L65/00

Abstract: An organic composition for a semiconductor device includes a compound for an organic semiconductor device including a structural unit; and a metal-containing compound selected from a transition element-containing compound, a lanthanide-containing compound, and a combination thereof, which results in improved charge mobility due to a reduced grain boundary.

Abstract translation: 用于半导体器件的有机组合物包括用于包括结构单元的有机半导体器件的化合物; 以及选自含过渡金属元素的化合物，含镧系元素的化合物及其组合的含金属化合物，由于晶界降低而导致电荷迁移率提高。

公开(公告)号：US20120104377A1

公开(公告)日：2012-05-03

申请号：US13346119

申请日：2012-01-09

Applicant: Do Hwan KIM ,  Hyun Sik Moon ,  Byung Wook Yoo ,  Sang Yoon Lee ,  Bang Lin Lee ,  Jeong Il Park ,  Eun Jeong Jeong

Inventor： Do Hwan KIM ,  Hyun Sik Moon ,  Byung Wook Yoo ,  Sang Yoon Lee ,  Bang Lin Lee ,  Jeong Il Park ,  Eun Jeong Jeong

IPC: H01L51/10

CPC classification number: H01L51/0533

Abstract: Disclosed herein are a method for fabricating an organic thin film transistor, including treating the surfaces of a gate insulating layer and source/drain electrodes with a self-assembled monolayer (SAM)-forming compound through a one-pot reaction, and an organic thin film transistor fabricated by the method. According to example embodiments, the surface-treatment of the gate insulating layer and the source/drain electrodes may be performed in a single vessel through a single process.

Abstract translation: 本文公开了一种用于制造有机薄膜晶体管的方法，包括通过一锅反应用自组装单层（SAM）形成化合物处理栅极绝缘层和源极/漏极的表面，以及有机薄膜 通过该方法制造的薄膜晶体管。 根据示例实施例，栅极绝缘层和源极/漏极的表面处理可以通过单个工艺在单个容器中进行。

公开(公告)号：US08026369B2

公开(公告)日：2011-09-27

申请号：US12007307

申请日：2008-01-09

Applicant: Bang Lin Lee ,  Eun Kyung Lee ,  Joo Young Kim ,  Kook Min Han

Inventor： Bang Lin Lee ,  Eun Kyung Lee ,  Joo Young Kim ,  Kook Min Han

IPC: C07D277/20 ,  H01L51/30

CPC classification number: C07D417/04 ,  C07D417/14 ,  C07D421/14 ,  H01L51/0036 ,  H01L51/0512 ,  Y02E10/549

Abstract: Disclosed herein is a composition containing hetero arylene or arylene showing a p-type semiconductor property in addition to thiophene showing a p-type semiconductor property and thiazole rings showing a n-type semiconductor property at a polymer main chain, an organic semiconductor polymer containing the composition, an organic active layer containing the organic semiconductor polymer, an organic thin film transistor (OTFT) containing the organic active layer, an electronic device containing the OTFT, and a method of preparing the same. The composition of example embodiments, which is used in an organic semiconductor polymer and contains thiazole rings, may exhibit increased solubility to an organic solvent, coplanarity, processibility and an improved thin film property.

Abstract translation: 本文公开了含有异亚芳基或亚芳基的组合物，除了显示p型半导体性质的噻吩外还显示p型半导体性质，在聚合物主链上显示出n型半导体性质的噻唑环，含有 含有有机半导体聚合物的有机活性层，含有机活性层的有机薄膜晶体管（OTFT），含OTFT的电子器件及其制备方法。 用于有机半导体聚合物并含有噻唑环的示例性实施方案的组成可以表现出对有机溶剂的增加的溶解性，共面性，可加工性和改善的薄膜性质。

公开(公告)号：US07829373B2

公开(公告)日：2010-11-09

申请号：US11270472

申请日：2005-11-10

Applicant: Eun Kyung Lee ,  Joo Young Kim ,  Bang Lin Lee ,  Sang-Yoon Lee ,  Eun Jeong Jeong

Inventor： Eun Kyung Lee ,  Joo Young Kim ,  Bang Lin Lee ,  Sang-Yoon Lee ,  Eun Jeong Jeong

IPC: H01L51/00 ,  C08G61/12

CPC classification number: H01L51/0036 ,  C08G61/122 ,  C08G61/126 ,  H01L51/0035 ,  H01L51/0545

Abstract: Disclosed herein is an organic polymer semiconductor compound, a method of forming an organic polymer semiconductor thin film using the same, and an organic thin film transistor using the same. Example embodiments of this invention pertain to an organic polymer semiconductor having a side chain including a removable substituent, and to an organic thin film transistor using the organic polymer semiconductor for an organic active layer, which has lower leakage current, higher charge mobility, and/or a higher on/off ratio.

Abstract translation: 本文公开了有机聚合物半导体化合物，使用其的有机聚合物半导体薄膜的形成方法和使用其的有机高分子半导体薄膜晶体管。 本发明的示例性实施方案涉及具有包含可除去取代基的侧链的有机聚合物半导体以及使用有机有机层的有机聚合物半导体的有机薄膜晶体管，其具有较低的漏电流，较高的电荷迁移率和/ 或更高的开/关比。

公开(公告)号：US07777221B2

公开(公告)日：2010-08-17

申请号：US12219273

申请日：2008-07-18

Applicant: Bang-lin Lee ,  Kook-min Han ,  Eun-kyung Lee ,  Do-hwan Kim ,  Hyun-sik Moon

Inventor： Bang-lin Lee ,  Kook-min Han ,  Eun-kyung Lee ,  Do-hwan Kim ,  Hyun-sik Moon

IPC: C08G61/00

CPC classification number: C08G61/126 ,  C08G61/123 ,  H01B1/127 ,  H01L51/0036 ,  H01L51/0043 ,  H01L51/0545 ,  Y02E10/549 ,  Y02P70/521

Abstract: An organic semiconducting copolymer according to example embodiments may be represented by Formula 1 below: An organic electronic device may include the above organic semiconducting copolymer. The organic semiconducting copolymer according to example embodiments may provide improved solubility, processability, and thin film properties. Consequently, the organic semiconducting copolymer may be used in a variety of electronic devices. A suitable electronic device may be an organic thin film transistor. When an active layer of an organic thin film transistor includes the organic semiconducting copolymer, higher charge mobility and lower breaking leakage current may be achieved.

Abstract translation: 根据示例性实施方案的有机半导体共聚物可以由下式1表示：有机电子器件可以包括上述有机半导体共聚物。 根据示例性实施方案的有机半导体共聚物可以提供改善的溶解度，可加工性和薄膜性质。 因此，有机半导体共聚物可用于各种电子器件中。 合适的电子器件可以是有机薄膜晶体管。 当有机薄膜晶体管的有源层包括有机半导体共聚物时，可实现较高的电荷迁移率和较低的断开漏电流。

公开(公告)号：US07750342B2

公开(公告)日：2010-07-06

申请号：US11655181

申请日：2007-01-19

Applicant: Joo Young Kim ,  Eun Kyung Lee ,  Sang-Yoon Lee ,  Bang Lin Lee

Inventor： Joo Young Kim ,  Eun Kyung Lee ,  Sang-Yoon Lee ,  Bang Lin Lee

IPC: H01L35/24 ,  H01L51/00

CPC classification number: H01L51/052 ,  C08G61/124 ,  C08G73/0611 ,  H01L51/0545

Abstract: Disclosed is an insulating organic polymer having side chains that enable the formation of a highly hydrophobic insulating layer with decreased surface energy. Decreased surface energy of an organic insulating layer formed using the insulating organic polymer may lead to an increase in the degree of alignment of a semiconductor material. Therefore, the insulating organic polymer may be used to fabricate an organic thin film transistor having improved characteristics, e.g., decreased threshold voltage and increased charge carrier mobility. Further disclosed are an organic insulating layer formed using the insulating polymer, an organic thin film transistor comprising the insulating layer and a method of fabricating the same, and an electronic device comprising the organic thin film transistor.

Abstract translation: 公开了具有侧链的绝缘有机聚合物，其能够形成具有降低的表面能的高疏水性绝缘层。 使用绝缘性有机聚合物形成的有机绝缘层的表面能的降低可能导致半导体材料的取向度的增加。 因此，绝缘有机聚合物可用于制造具有改进的特性的有机薄膜晶体管，例如降低的阈值电压和增加的电荷载流子迁移率。 还公开了使用绝缘聚合物形成的有机绝缘层，包括该绝缘层的有机薄膜晶体管及其制造方法，以及包含该有机薄膜晶体管的电子器件。

公开(公告)号：US07692021B2

公开(公告)日：2010-04-06

申请号：US11508925

申请日：2006-08-24

Applicant: Eun Jeong Jeong ,  Joo Young Kim ,  Hyun Sik Moon ,  Bang Lin Lee ,  Kook Min Han ,  Eun Kyung Lee

Inventor： Eun Jeong Jeong ,  Joo Young Kim ,  Hyun Sik Moon ,  Bang Lin Lee ,  Kook Min Han ,  Eun Kyung Lee

IPC: C07D277/20 ,  C07D277/60

CPC classification number: C07D495/04 ,  C07D417/14 ,  H01L51/0545 ,  H01L51/5048

Abstract: Disclosed herein are NPN-type low molecular aromatic ring compounds, organic semiconductor layers formed from such compounds that exhibit improved electrical stability and methods of forming such layers using solution-based processes, for example, spin coating processes performed at or near room temperature. These NPN-type compounds may be used, either singly or in combination, for fabricating organic semiconductor layers in electronic devices. The NPN-type aromatic ring compounds according to example embodiments may be deposited as a solution on a range of substrates to form a coating film that is then subjected to a thermal treatment to form a semiconductor thin film across large substrate surfaces that exhibits reduced leakage currents relative to conventional PNP-type organic semiconductor materials, thus improving the electrical properties of the resulting devices.

Abstract translation: 本文公开了NPN型低分子芳环化合物，由这些化合物形成的有机半导体层，其表现出改进的电稳定性，并且使用基于溶液的方法形成这种层的方法，例如在室温或室温附近进行的旋涂方法。 这些NPN型化合物可以单独或组合地用于制造电子器件中的有机半导体层。 根据示例性实施方案的NPN型芳环化合物可以作为溶液沉积在一系列基底上以形成涂膜，然后对其进行热处理以在跨越大的衬底表面形成半导体薄膜，该衬底表面具有减小的漏电流 相对于常规PNP型有机半导体材料，从而改善所得器件的电性能。

公开(公告)号：US20090256143A1

公开(公告)日：2009-10-15

申请号：US12390841

申请日：2009-02-23

Applicant: Eun Jeong Jeong ,  Chang Ju Kim ,  Bang Lin Lee ,  Sang Yoon Lee ,  Kook Min Han

Inventor： Eun Jeong Jeong ,  Chang Ju Kim ,  Bang Lin Lee ,  Sang Yoon Lee ,  Kook Min Han

IPC: H01L51/30 ,  H01L51/10

CPC classification number: H01L51/0068 ,  C08G61/12 ,  C08G61/126 ,  H01L51/0036 ,  H01L51/0072 ,  H01L51/0545

Abstract: An oligothiophene-arylene derivative wherein an arylene having n-type semiconductor characteristics is introduced into an oligothiophene having p-type semiconductor characteristics, thereby simultaneously exhibiting both p-type and n-type semiconductor characteristics. Further, an organic thin film transistor using the oligothiophene-arylene derivative.

Abstract translation: 将具有n型半导体特性的亚芳基引入具有p型半导体特性的低聚噻吩中的低聚噻吩 - 亚芳基衍生物，同时具有p型和n型半导体特性。 另外，使用低聚噻吩 - 亚芳基衍生物的有机薄膜晶体管。

公开(公告)号：US07368510B2

公开(公告)日：2008-05-06

申请号：US11073691

申请日：2005-03-08

Applicant: Bang Lin Lee ,  Kook Min Han ,  Jung Han Shin ,  Sang Yoon Lee ,  Eun Jeong Jeong

Inventor： Bang Lin Lee ,  Kook Min Han ,  Jung Han Shin ,  Sang Yoon Lee ,  Eun Jeong Jeong

IPC: C08F8/18 ,  H01L29/08 ,  H01L29/02 ,  H01L51/30 ,  H01B1/12

CPC classification number: H01L51/0043 ,  H01L51/0036 ,  H01L51/0512 ,  Y10T428/31533

Abstract: An exemplary organic semiconductor copolymer includes a polymeric repeat structure having a polythiophene structure and an electron accepting unit. The electron accepting unit has at least one electron-accepting heteroaromatic structure with at least one electron-withdrawing imine nitrogen in the heteroaromatic structure or a thiophene-arylene comprising a C2-30 heteroaromatic structure. Methods of synthesis and electronic devices incorporating the disclosed organic semiconductors, e.g., as a channel layer, are also disclosed.

Abstract translation: 示例性的有机半导体共聚物包括具有聚噻吩结构的聚合物重复结构和电子接受单元。 电子接受单元具有在杂芳族结构中具有至少一个吸电子亚胺氮的至少一个电子接受性杂芳族结构或包含C 2〜2-30杂芳族结构的噻吩 - 亚芳基。 还公开了合成方法和结合所公开的有机半导体的电子器件，例如作为沟道层。