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38 条记录 (耗时 0.024 秒)

    Method for producing a fiber for an artificial hair by polyvinyl chloride/acryl-copolymer blends
    4.
    发明申请
    Method for producing a fiber for an artificial hair by polyvinyl chloride/acryl-copolymer blends 审中-公开
    通过聚氯乙烯/丙烯酸 - 共聚物共混物制造人造毛发纤维的方法

    公开(公告)号：US20060237869A1

    公开(公告)日：2006-10-26

    申请号：US11407410

    申请日：2006-04-19

    申请人： Hyun-Sik Moon ,  Jee-Won Park

    发明人： Hyun-Sik Moon ,  Jee-Won Park

    IPC分类号： D01D5/30

    CPC分类号： D01F6/48 ,  A41G3/0083 ,  D01D5/088 ,  D01D5/098 ,  D01F1/10 ,  D01F6/54

    摘要： The present invention relates to a method for producing a fiber for an artificial hair comprising: (a) pre-mixing a polyvinyl chloride resin mixture which contain 90 to 96% by weight of a polyvinyl chloride resin, 3 to 7% by weight of a stabilizer and 1 to 3% by weight of a lubricant at 90 to 140° C., mixing 20 to 80% by weight of a polyvinyl chloride resin mixture and 20 to 80% by weight of acryl-copolymer to obtain a polyvinyl chloride/acryl-copolymer blends composition; (b) melt-extruding said mixed resin composition through an extruder at 100 to 210° C. to obtain a pellet; (c) inputting said pellet into an spinning machine, melt-spinning at 150 to 220° C. to obtain filament; (d) drawing said melt-spinned filament to have a fineness of 20 to 100 denier; and (e) passing said drawn filament through heat-setting machine of 100 to 150° C. to fix the property of the filament.

    摘要翻译： 本发明涉及一种人造毛发纤维的制造方法，其特征在于：（a）预先混合含有90〜96重量％的聚氯乙烯树脂的聚氯乙烯树脂混合物，3〜7重量％ 稳定剂和1至3重量％的润滑剂，在90至140℃下，混合20至80重量％的聚氯乙烯树脂混合物和20至80重量％的丙烯酸共聚物，得到聚氯乙烯/丙烯酸酯 - 共聚物混合物组成; （b）通过挤出机在100-210℃熔融挤出所述混合树脂组合物以获得颗粒; （c）将所述颗粒输入纺丝机中，在150-220℃熔融纺丝以获得长丝; （d）拉伸熔融纺丝的细丝，其细度为20至100旦尼尔; 和（e）将所拉伸的细丝通过热定型机100至150℃以固定丝的性质。

    Organic thin film transistor
    5.
    发明授权
    Organic thin film transistor 有权
    有机薄膜晶体管

    公开(公告)号：US08373161B2

    公开(公告)日：2013-02-12

    申请号：US13346119

    申请日：2012-01-09

    申请人： Do Hwan Kim ,  Hyun Sik Moon ,  Byung Wook Yoo ,  Sang Yoon Lee ,  Bang Lin Lee ,  Jeong Il Park ,  Eun Jeong Jeong

    发明人： Do Hwan Kim ,  Hyun Sik Moon ,  Byung Wook Yoo ,  Sang Yoon Lee ,  Bang Lin Lee ,  Jeong Il Park ,  Eun Jeong Jeong

    IPC分类号： H01L35/24 ,  H01L51/00

    CPC分类号： H01L51/0533

    摘要： Disclosed herein are a method for fabricating an organic thin film transistor, including treating the surfaces of a gate insulating layer and source/drain electrodes with a self-assembled monolayer (SAM)-forming compound through a one-pot reaction, and an organic thin film transistor fabricated by the method. According to example embodiments, the surface-treatment of the gate insulating layer and the source/drain electrodes may be performed in a single vessel through a single process.

    摘要翻译： 本文公开了一种用于制造有机薄膜晶体管的方法，包括通过一锅反应用自组装单层（SAM）形成化合物处理栅极绝缘层和源极/漏极的表面，以及有机薄膜 通过该方法制造的薄膜晶体管。 根据示例实施例，栅极绝缘层和源极/漏极的表面处理可以通过单个工艺在单个容器中进行。

    Organic semiconductor thin films using aromatic enediyne derivatives and manufacturing methods thereof, and electronic devices incorporating such films
    6.
    发明授权
    Organic semiconductor thin films using aromatic enediyne derivatives and manufacturing methods thereof, and electronic devices incorporating such films 有权
    使用芳香族烯二炔衍生物的有机半导体薄膜及其制造方法以及包含这种膜的电子器件

    公开(公告)号：US08097694B2

    公开(公告)日：2012-01-17

    申请号：US12382033

    申请日：2009-03-06

    申请人： Eun Jeong Jeong ,  Hyun Sik Moon ,  Kook Min Han

    发明人： Eun Jeong Jeong ,  Hyun Sik Moon ,  Kook Min Han

    IPC分类号： C08F38/00 ,  H01L51/40 ,  C08G83/00

    CPC分类号： H01L51/0545 ,  C07D333/18 ,  H01L51/0003 ,  H01L51/0068 ,  Y02E10/549 ,  Y02P70/521

    摘要： Disclosed are organic semiconductor thin films using aromatic enediyne derivatives, manufacturing methods thereof, and methods of fabricating electronic devices incorporating such organic semiconductor thin films. Aromatic enediyne derivatives according to example embodiments provide improved chemical and/or electrical stability which may improve the reliability of the resulting semiconductor devices. Aromatic enediyne derivatives according to example embodiments may also be suitable for deposition on various substrates via solution-based processes, for example, spin coating, at temperatures at or near room temperature to form a coating film that is then heated to form an organic semiconductor thin film. The availability of this reduced temperature processing allows the use of the aromatic enediynes derivatives on large substrate surfaces and/or on substrates not suitable for higher temperature processing. Accordingly, the organic semiconductor thin films according to example embodiments may be incorporated in thin film transistors, electroluminescent devices, solar cells, and memory devices.

    摘要翻译： 公开了使用芳族烯二炔衍生物的有机半导体薄膜，其制造方法，以及制造结合有机半导体薄膜的电子器件的制造方法。 根据示例性实施方案的芳族烯二炔衍生物提供改善的化学和/或电稳定性，其可以提高所得半导体器件的可靠性。 根据示例性实施方案的芳族烯二炔衍生物还可适用于通过基于溶液的方法例如旋涂，在室温或接近室温的温度下沉积在各种基材上，以形成涂膜，然后将其加热形成有机半导体薄膜 电影。 这种降低温度处理的可用性允许在大衬底表面上和/或不适于较高温度处理的衬底上使用芳族烯二炔衍生物。 因此，根据示例性实施例的有机半导体薄膜可以结合在薄膜晶体管，电致发光器件，太阳能电池和存储器件中。

    Multi-layered bipolar field-effect transistor and method of manufacturing the same
    8.
    发明申请
    Multi-layered bipolar field-effect transistor and method of manufacturing the same 有权
    多层双极场效应晶体管及其制造方法

    公开(公告)号：US20090101891A1

    公开(公告)日：2009-04-23

    申请号：US11976090

    申请日：2007-10-19

    申请人： Hyun Sik Moon ,  Sang Yoon Lee ,  Bon Won Koo ,  Alan J. Heeger ,  Kwang Hee Lee

    发明人： Hyun Sik Moon ,  Sang Yoon Lee ,  Bon Won Koo ,  Alan J. Heeger ,  Kwang Hee Lee

    IPC分类号： H01L51/05 ,  H01L51/40

    CPC分类号： H01L51/0545 ,  B82Y10/00 ,  H01L51/0036 ,  H01L51/0047 ,  H01L51/0508 ,  H01L51/0562 ,  H01L51/4226

    摘要： Disclosed herein is a multi-layered bipolar field-effect transistor, including a gate electrode, a gate insulating layer, an electron transport layer, a hole transport layer, a source electrode, and a drain electrode, in which an intermediate separating layer is formed between the electron transport layer and the hole transport layer, and a method of manufacturing the same. The multi-layered bipolar field-effect transistor has advantages in that, since a P-channel and a N-channel are effectively separated, the electrical properties thereof, such as current ON/OFF ratio, electron mobility, hole mobility, and the like, are improved, and, since a device can be manufactured through a solution process without damaging layers, the processability thereof is improved.

    摘要翻译： 本文公开了一种多层双极场效应晶体管，其包括栅电极，栅极绝缘层，电子传输层，空穴传输层，源电极和漏电极，其中形成中间分离层 在电子传输层和空穴传输层之间，以及其制造方法。 多层双极场效应晶体管的优点在于，由于P沟道和N沟道被有效地分离，所以其电特性如电流ON / OFF比，电子迁移率，空穴迁移率等 ，并且由于可以通过溶液方法制造装置而不损坏层，因此其加工性得到改善。

    Organic thin film transistor and method of manufacturing the same
    9.
    发明申请
    Organic thin film transistor and method of manufacturing the same 审中-公开
    有机薄膜晶体管及其制造方法

    公开(公告)号：US20090032809A1

    公开(公告)日：2009-02-05

    申请号：US12078748

    申请日：2008-04-04

    申请人： Do Hwan Kim ,  Jung Seok Hahn ,  Sang Yoon Lee ,  Bon Won Koo ,  Hyun Sik Moon

    发明人： Do Hwan Kim ,  Jung Seok Hahn ,  Sang Yoon Lee ,  Bon Won Koo ,  Hyun Sik Moon

    IPC分类号： H01L51/05 ,  H01L51/40

    CPC分类号： H01L51/0512 ,  H01L51/0012 ,  H01L51/0037 ,  H01L51/0529

    摘要： Disclosed are an organic thin film transistor and a method of manufacturing the same, in which a crystalline organic binder layer is on the surface of an organic insulating layer and source/drain electrodes or on the surface of the source/drain electrodes. The organic thin film transistor may be improved in two-dimensional geometric lattice matching and interface stability at the interface between the organic semiconductor and the insulating layer or at the interface between the organic semiconductor layer and the electrode, thereby improving the electrical properties of the device.

    摘要翻译： 公开了一种有机薄膜晶体管及其制造方法，其中结晶有机粘合剂层位于有机绝缘层和源/漏电极的表面上或源/漏电极的表面上。 有机薄膜晶体管可以在有机半导体和绝缘层之间的界面处或在有机半导体层和电极之间的界面处的二维几何晶格匹配和界面稳定性得到改善，从而改善了器件的电性能 。