Wire for a display device, a method for manufacturing the same, a thin film transistor array panel including the wire, and a method for manufacturing the same
    52.
    发明授权
    Wire for a display device, a method for manufacturing the same, a thin film transistor array panel including the wire, and a method for manufacturing the same 失效
    用于显示装置的线,其制造方法,包括该线的薄膜晶体管阵列面板及其制造方法

    公开(公告)号:US07638800B2

    公开(公告)日:2009-12-29

    申请号:US10501597

    申请日:2002-07-29

    IPC分类号: H01L21/84

    摘要: First, a Cr film and a CrOx film are deposited and patterned using an etchant including 8-12% Ce(NH4)2(NO3)6, 10-20% NH3 and remaining ultra pure water to form a gate wire including a plurality of gate lines, a plurality of gate electrodes and a plurality of gate pads. Next, a gate insulating film, a semiconductor layer and an ohmic contact layer are formed in sequence. A Cr film and CrOx film are deposited in sequence and patterned using an etchant including 8-12% Ce(NH4)2(NO3)6, 10-20% NH3 and remaining ultra pure water to form a data wire including a plurality of data lines, a plurality of source electrodes, a plurality of drain electrodes and a plurality of data pads. A passivation layer is deposited and patterned to form a plurality of contact holes respectively exposing the drain electrodes, the gate pads and the data pads. A transparent conductive material or a reflective conductive material is deposited and patterned to form a plurality of pixel electrodes, a plurality of subsidiary gate pads and a plurality of subsidiary data pads electrically connected to the drain electrodes, the gate pads and the data pads, respectively. The gate lines and the data lines with low reflectance are used as a light-blocking film for blocking the light leakage between the pixel areas, and do not increase the black brightness. Accordingly, a separate black matrix need not be provided on the color filter panel, thereby securing both aperture ratio of the pixel and high contrast ratio.

    摘要翻译: 首先,使用包括8-12%Ce(NH 4)2(NO 3)6,10-20%NH 3和剩余的超纯水的蚀刻剂沉积和图案化Cr膜和CrOx膜,以形成包括多个 栅极线,多个栅电极和多个栅极焊盘。 接下来,依次形成栅极绝缘膜,半导体层和欧姆接触层。 依次沉积Cr膜和CrOx膜,并使用包括8-12%Ce(NH 4)2(NO 3)6,10-20%NH 3和剩余的超纯水的蚀刻剂进行图案化以形成包括多个数据的数据线 线,多个源电极,多个漏电极和多个数据焊盘。 钝化层被沉积并图案化以形成分别暴露漏电极,栅极焊盘和数据焊盘的多个接触孔。 沉积透明导电材料或反射导电材料以形成多个像素电极,分别与漏电极,栅极焊盘和数据焊盘电连接的多个辅助栅极焊盘和多个辅助数据焊盘 。 栅极线和低反射率的数据线被用作阻挡像素区域之间的漏光的遮光膜,并且不增加黑色亮度。 因此,不需要在滤色器面板上设置单独的黑矩阵,从而确保像素的开口率和高对比度。

    Display device and manufacturing method thereof
    53.
    发明授权
    Display device and manufacturing method thereof 失效
    显示装置及其制造方法

    公开(公告)号:US07638358B2

    公开(公告)日:2009-12-29

    申请号:US11601086

    申请日:2006-11-17

    IPC分类号: H01L21/00

    摘要: According to an embodiment of the present invention, a manufacturing method of a display device includes forming a plurality of gate wires comprising a gate electrode on an insulating substrate, forming an electrode layer comprising a source electrode and a drain electrode spaced apart from each other to define a channel region on the gate electrode interposed therebetween, forming a first barrier wall having a first opening for exposing the channel region, a portion of the source electrode, and a portion of the drain electrode on the electrode layer where the first barrier wall has a surface, forming a shielding film to cover the channel region inside the first opening, treating the surface of the first barrier wall, removing the shielding film, and forming an organic semiconductor layer inside the first opening.

    摘要翻译: 根据本发明的实施例,显示装置的制造方法包括在绝缘基板上形成包括栅电极的多条栅极线,形成包括彼此间隔开的源电极和漏极的电极层, 在所述栅极电极之间限定沟道区,形成第一阻挡壁,所述第一阻挡壁具有用于暴露所述沟道区的第一开口,所述源极的一部分以及所述第一阻挡壁具有的所述电极层上的所述漏电极的一部分 形成屏蔽膜以覆盖第一开口内的沟道区域,处理第一阻挡壁的表面,去除屏蔽膜,以及在第一开口内部形成有机半导体层。

    THIN FILM TRANSISTOR SUBSTRATE AND METHOD FOR FABRICATING THE SAME
    54.
    发明申请
    THIN FILM TRANSISTOR SUBSTRATE AND METHOD FOR FABRICATING THE SAME 有权
    薄膜晶体管基板及其制造方法

    公开(公告)号:US20090317942A1

    公开(公告)日:2009-12-24

    申请号:US12553780

    申请日:2009-09-03

    IPC分类号: H01L51/40 H01L21/336

    CPC分类号: H01L51/0533 H01L51/107

    摘要: A thin film transistor substrate includes an insulating substrate, a gate electrode formed on the insulating substrate, a first gate insulating film formed on the gate electrode and having an opening for exposing at least part of the gate electrode, a second gate insulating film covering the gate electrode exposed by the opening and having a larger dielectric constant than the first gate insulating film, a source electrode and a drain electrode disposed apart from each other in a central area of the second gate insulating film and defining a channel region there between, and an organic semiconductor layer formed in the channel region. A method for forming the TFT substrate is also provided. Thus, the present invention provides a TFT substrate in which a characteristic of a TFT is improved.

    摘要翻译: 薄膜晶体管基板包括绝缘基板,形成在绝缘基板上的栅极电极,形成在栅电极上并具有用于暴露栅电极的至少一部分的开口的第一栅极绝缘膜,覆盖 栅电极由开口暴露并且具有比第一栅极绝缘膜更大的介电常数,在第二栅极绝缘膜的中心区域彼此分开设置的源电极和漏电极,并在其间限定沟道区域, 形成在沟道区域中的有机半导体层。 还提供了一种用于形成TFT基板的方法。 因此,本发明提供了TFT的特性提高的TFT基板。

    Electrophoretic display device
    55.
    发明授权
    Electrophoretic display device 有权
    电泳显示装置

    公开(公告)号:US07619608B2

    公开(公告)日:2009-11-17

    申请号:US10829294

    申请日:2004-04-22

    IPC分类号: G09G3/34

    摘要: An electrophoretic display (EPD) shows a high contrast and a color display. The EPD blocks a channel of a thin film transistor from an incident light in order to prevent a current leakage. The color display may also include a white, black, red, green, blue, yellow, cyan, magenta or other color pigment in a micro-capsule.

    摘要翻译: 电泳显示器(EPD)显示高对比度和彩色显示。 EPD阻挡来自入射光的薄膜晶体管的通道,以防止电流泄漏。 彩色显示器还可以包括微胶囊中的白色,黑色,红色,绿色,蓝色,黄色,青色,品红色或其他彩色颜料。

    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    56.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
    半导体器件及其制造方法

    公开(公告)号:US20090026575A1

    公开(公告)日:2009-01-29

    申请号:US12243823

    申请日:2008-10-01

    申请人: Bo-sung Kim

    发明人: Bo-sung Kim

    IPC分类号: H01L23/525 H01L21/768

    摘要: Provided are a semiconductor device which substantially prevents repair failure and a method of manufacturing the same. The semiconductor device includes a plurality of first fuses formed apart from each other on a semiconductor substrate, and on which a protective layer is formed; a first insulating layer filled in between the first fuses and configured to expose the protective layer; a plurality of second fuses formed between the first fuses and on the first insulating layer; and a second insulating layer formed on the first insulating layer, wherein the second insulating layer includes a fuse window configured to fully expose the second fuses and the protective layer formed on the first fuses.

    摘要翻译: 提供了基本上防止修复故障的半导体器件及其制造方法。 半导体器件包括在半导体衬底上彼此分开形成并在其上形成有保护层的多个第一熔丝; 第一绝缘层,填充在所述第一保险丝之间并且被配置为暴露所述保护层; 形成在所述第一保险丝和所述第一绝缘层之间的多个第二保险丝; 以及形成在所述第一绝缘层上的第二绝缘层,其中所述第二绝缘层包括构造成完全暴露所述第二熔丝和形成在所述第一熔丝上的所述保护层的熔丝窗。

    Semiconductor device and method of manufacturing the same
    58.
    发明授权
    Semiconductor device and method of manufacturing the same 失效
    半导体装置及其制造方法

    公开(公告)号:US07449764B2

    公开(公告)日:2008-11-11

    申请号:US11649484

    申请日:2007-01-04

    申请人: Bo-sung Kim

    发明人: Bo-sung Kim

    IPC分类号: H01L29/00

    摘要: Provided are a semiconductor device which substantially prevents repair failure and a method of manufacturing the same. The semiconductor device includes a plurality of first fuses formed apart from each other on a semiconductor substrate, and on which a protective layer is formed; a first insulating layer filled in between the first fuses and configured to expose the protective layer; a plurality of second fuses formed between the first fuses and on the first insulating layer; and a second insulating layer formed on the first insulating layer, wherein the second insulating layer includes a fuse window configured to fully expose the second fuses and the protective layer formed on the first fuses.

    摘要翻译: 提供了基本上防止修复故障的半导体器件及其制造方法。 半导体器件包括在半导体衬底上彼此分开形成并在其上形成有保护层的多个第一熔丝; 第一绝缘层,填充在所述第一保险丝之间并且被配置为暴露所述保护层; 形成在所述第一保险丝和所述第一绝缘层之间的多个第二保险丝; 以及形成在所述第一绝缘层上的第二绝缘层,其中所述第二绝缘层包括构造成完全暴露所述第二熔丝和形成在所述第一熔丝上的所述保护层的熔丝窗。

    ORGANIC THIN FILM TRANSISTOR ARRAY AND MANUFACTURING METHOD THEREOF
    59.
    发明申请
    ORGANIC THIN FILM TRANSISTOR ARRAY AND MANUFACTURING METHOD THEREOF 有权
    有机薄膜晶体管阵列及其制造方法

    公开(公告)号:US20080131986A1

    公开(公告)日:2008-06-05

    申请号:US12015297

    申请日:2008-01-16

    IPC分类号: H01L21/70

    摘要: An organic thin film transistor array panel is provided, which includes: a substrate; a data line formed on the substrate and including a source electrode; a drain electrode formed on the substrate and separated from the data line; an organic semiconductor disposed on the source electrode and the drain electrode; a gate insulator formed on the organic semiconductor; a gate line including a gate electrode disposed on the gate insulator; a passivation layer formed on the gate line and having a first contact hole on the drain electrode; a pixel electrode connected to the drain electrode through the first contact hole; and an opaque light blocking member disposed under the organic semiconductor.

    摘要翻译: 提供有机薄膜晶体管阵列面板,其包括:基板; 数据线,形成在所述基板上并且包括源电极; 漏极,形成在基板上并与数据线分离; 设置在源电极和漏电极上的有机半导体; 形成在有机半导体上的栅极绝缘体; 栅极线,包括设置在栅极绝缘体上的栅电极; 钝化层,形成在所述栅极线上,并且在所述漏极上具有第一接触孔; 通过所述第一接触孔与所述漏电极连接的像素电极; 以及设置在所述有机半导体下方的不透明遮光构件。

    ELECTROPHORETIC DISPLAY AND THE MANUFACTURING METHOD THEREOF
    60.
    发明申请
    ELECTROPHORETIC DISPLAY AND THE MANUFACTURING METHOD THEREOF 有权
    电泳显示及其制造方法

    公开(公告)号:US20080100565A1

    公开(公告)日:2008-05-01

    申请号:US11923035

    申请日:2007-10-24

    IPC分类号: G09G3/34

    摘要: An elecotrophoretic display device includes a first substrate, a gate line formed on the first substrate, a data line crossing the gate line to form a defined area, a source electrode connected to the data line, a drain electrode facing the source electrode to define a channel area, a color filter formed on the first substrate, a first electrode formed on the color filter, the first electrode electrically connected to the drain electrode, a second substrate facing the first substrate, a second electrode formed on the second substrate and a fluid and a plurality of charged particles interposed between the first electrode and the second electrode.

    摘要翻译: 电泳显示装置包括第一基板,形成在第一基板上的栅极线,与栅极线交叉以形成限定区域的数据线,连接到数据线的源电极,面对源电极的漏电极, 通道区域,形成在第一基板上的滤色器,形成在滤色器上的第一电极,电连接到漏电极的第一电极,面对第一基板的第二基板,形成在第二基板上的第二电极和流体 以及插入在第一电极和第二电极之间的多个带电粒子。