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61 条记录 (耗时 0.015 秒)

    Surface-emitting laser device
    52.
    发明授权
    Surface-emitting laser device 失效
    表面发射激光器件

    公开(公告)号：US5883911A

    公开(公告)日：1999-03-16

    申请号：US742160

    申请日：1996-11-01

    申请人： Bun Lee ,  Jong-Hyeob Baek ,  Sung-Woo Choi ,  Jin-Hong Lee

    发明人： Bun Lee ,  Jong-Hyeob Baek ,  Sung-Woo Choi ,  Jin-Hong Lee

    IPC分类号： H01S3/00 ,  H01S5/183 ,  H01S5/32 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19

    CPC分类号： B82Y20/00 ,  H01S5/183 ,  H01S2301/173 ,  H01S5/1053 ,  H01S5/18319 ,  H01S5/3205 ,  H01S5/3215 ,  H01S5/3406 ,  H01S5/34313

    摘要： An improved surface-emitting laser device by which the light emitting wave length can be easily varied since the electric potential grown using the thin film material having a desired lattice rate uses a very small portion of activation layers, and by which the continuous oscillation is made at room temperature by using the reflector having high reflective index. Thus, optical characteristics are increased, which includes a GaAs substrate; a lower reflector is formed of multiple layers of AlAs/GaAs heterogenous thin films having a reflective index of 1 on the GaAs substrate; a tooth-shaped grading layer is formed of a lower reflector on the lower reflector and an In.sub.x Ga.sub.1-x As thin film having a large lattice rate in a compositional grading method; a tooth-shaped InGaAs grading well is formed on the In.sub.x Ga.sub.1-x As grading layer as an In composition of which reduced rather than the grading layer; a buffer layer is formed on the In.sub.x Ga.sub.1-x As thin film and formed of a lattice-bonded InP; and an upper semiconductor reflector is formed on a multilayer of an InAlAs/InAlGaAs heterogenous thin film on the buffer layer, which has a reflective index of 1, in which a laser beam is emitted from the surface of the same.

    摘要翻译： 由于使用具有期望晶格率的薄膜材料生长的电位使用非常小部分的活化层，并且由此产生连续振荡，因此改进的表面发射激光器件可以容易地改变发光波长 通过使用具有高反射率的反射器在室温下进行。 因此，增加了包括GaAs衬底的光学特性; 在GaAs衬底上由反射率为1的多层AlAs / GaAs异质薄膜形成下反射体; 在下反射器上由下反射器形成的齿形分级层和在组成分级方法中具有大晶格率的In x Ga 1-x As薄膜; 在In x Ga 1-x As分级层上形成一个齿形的InGaAs分级阱，作为In组成减少而不是分级层; 在In x Ga 1-x As薄膜上形成缓冲层，由晶格键合的InP形成; 并且在缓冲层上的反射率为1的InAlAs / InAlGaAs异质薄膜的多层上形成上半导体反射器，其中从其表面发射激光束。

    Method for sensing complete removal of oxide layer from substrate by thermal etching with real time
    53.
    发明授权
    Method for sensing complete removal of oxide layer from substrate by thermal etching with real time 失效
    用于通过热蚀刻实时感测从衬底完全去除氧化物层的方法

    公开(公告)号：US5748319A

    公开(公告)日：1998-05-05

    申请号：US671842

    申请日：1996-06-28

    申请人： Jong-Hyeob Baek ,  Bun Lee ,  Sung-Woo Choi ,  Jin-Hong Lee

    发明人： Jong-Hyeob Baek ,  Bun Lee ,  Sung-Woo Choi ,  Jin-Hong Lee

    IPC分类号： H01L21/302 ,  G01B11/06 ,  H01L21/3065

    CPC分类号： G01B11/0683

    摘要： A method for sensing the completion of removal of an oxide layer from a semiconductor substrate or a super conductor by a thermal etching in real time. In the method, the time of removal of the oxide layer on the semiconductor substrate or the super conductor can ben accurately sensed. According to the method, when an oxide layer which is different from the semiconductor substrate in the refractive index is being thermally etched at a high temperature, the reflected signals of the laser beams forms a periodicity, and this periodicity is utilized so as to determine the etching rate and the time of the completion of the etching.

    摘要翻译： 一种用于通过热蚀刻实时地感测从半导体衬底或超导体去除氧化物层的完成的方法。 在该方法中，可以准确地感测去除半导体衬底或超导体上的氧化物层的时间。 根据该方法，当在高温下热蚀刻与折射率不同的半导体衬底的氧化物层时，激光束的反射信号形成周期性，并且利用该周期性来确定 蚀刻速率和蚀刻完成的时间。

    Hybrid error-control algorithm
    55.
    发明授权
    Hybrid error-control algorithm 有权
    混合误差控制算法

    公开(公告)号：US08539317B2

    公开(公告)日：2013-09-17

    申请号：US12768479

    申请日：2010-04-27

    申请人： Jack Yiu-bun Lee

    发明人： Jack Yiu-bun Lee

    IPC分类号： H03M13/00

    CPC分类号： H04L1/1819 ,  H04L1/1809 ,  H04L1/1812 ,  H04L12/1863

    摘要： An embodiment of the invention includes an efficient error-control system and method for recovering packet losses, especially losses in distributing multicast video over broadband residential networks. Preferably, unlike most existing error-control algorithms designed for Internet multicast, the system and method does not employ substantial feedback suppression. Preferably, the system and method does not employ substantial multicasted retransmission. Preferably, the system and method does not employ substantial parity retransmission. Preferably, the system and method does not employ substantial local loss recovery. The system and method integrates two existing classes of error-control algorithms: Automatic Repeat Request (ARQ) and Forward Error Correction (FEC), to reduce traffic overhead and achieve scalability.

    摘要翻译： 本发明的一个实施例包括一种用于恢复分组丢失的有效的误差控制系统和方法，特别是在宽带住宅网络上分发多播视频的损失。 优选地，与大多数现有用于因特网多播的错误控制算法不同，系统和方法不采用实质的反馈抑制。 优选地，系统和方法不采用实质的多播重传。 优选地，该系统和方法不采用实质的奇偶校验重传。 优选地，该系统和方法不采用大量的本地损耗恢复。 系统和方法集成了两种现有的错误控制算法：自动重传请求（ARQ）和前向纠错（FEC），以减少流量开销并实现可扩展性。

    APPARATUS AND METHOD FOR IDENTIFYING OBJECT MOVEMENT AND LOCATION WITH RFID DEVICE
    56.
    发明申请
    APPARATUS AND METHOD FOR IDENTIFYING OBJECT MOVEMENT AND LOCATION WITH RFID DEVICE 审中-公开
    使用RFID设备识别物体移动和位置的装置和方法

    公开(公告)号：US20100052867A1

    公开(公告)日：2010-03-04

    申请号：US12523979

    申请日：2008-01-15

    申请人： Siu Keung Kwok ,  Chi Fai Cheung ,  Hing Choi Tsang ,  Wing Bun Lee ,  Burly K. Tan ,  Jay Lee ,  Pui Him Ng ,  Sze Kit Ho

    发明人： Siu Keung Kwok ,  Chi Fai Cheung ,  Hing Choi Tsang ,  Wing Bun Lee ,  Burly K. Tan ,  Jay Lee ,  Pui Him Ng ,  Sze Kit Ho

    IPC分类号： H04Q5/22

    CPC分类号： G01V15/00

    摘要： An apparatus for identifying object movement and location with RFID device comprises two RFID gateways constructed by at least one RFID interrogator located inside and outside an entrance of a monitored zone independently, a portable RFID tag carried by the object capable of receiving and responding said signals emitted by said RFID interrogator, and a data processor connected with said RFID gateways capable of receiving said responses to identify said object movement as leaving or entering said entrance and said object location as outside or inside said monitored zone. There is also a corresponding method for identifying object movement and location with RFID device.

    摘要翻译： 一种利用RFID装置识别物体运动和位置的装置包括由至少一个RFID询问器构成的两个RFID网关，该至少一个RFID询问器独立地位于被监视区域的入口的内部和外部，该对象携带的便携式RFID标签能够接收并响应所发射的所述信号 以及与所述RFID网关连接的能够接收所述响应的数据处理器，以识别所述对象移动，作为离开或进入所述入口和所述对象位置，作为所述监视区域的外部或内部。 还有一种用于识别物体移动和使用RFID设备的位置的相应方法。

    Method for sensing etch of distributed bragg reflector in real time
    59.
    发明授权
    Method for sensing etch of distributed bragg reflector in real time 有权
    用于实时感测分布式布拉格反射器的蚀刻的方法

    公开(公告)号：US06193900B1

    公开(公告)日：2001-02-27

    申请号：US09143484

    申请日：1998-08-28

    申请人： Jong Hyeob Baek ,  Bun Lee

    发明人： Jong Hyeob Baek ,  Bun Lee

    IPC分类号： B24B4900

    CPC分类号： G02B5/1857 ,  G02B2006/12104 ,  G02B2006/12176

    摘要： A method for sensing the etch of distributed Bragg reflector (called DBR below) in a real time is provided. More particularly, a method for searching informations of etch speed and etch stop step by monitoring the etching procedure in the wet etching method which is a post-process in the semiconductor device manufacturing process. A laser beam is irradiated on the sample sunk in the etching solution during the etching process is on the way. Then, computer measures the intensity of laser beam reflected on the sample, analyzes the periodic signals occurred by its interference and obtains the etching speed of the sample in a real time. The laser provides thermal energy on the sample during wet etching and occurs irregular etching speed on a beam contacting part of sample and non contacting part. Uniform etching speed can be obtained in the entire sample using a convex lens having a suitable focal distance.

    摘要翻译： 提供了用于实时感测分布式布拉格反射器（以下称为DBR）的蚀刻的方法。 更具体地，涉及一种用于通过在半导体器件制造过程中通过监视作为后处理的湿式蚀刻方法中的蚀刻步骤来搜索蚀刻速度和蚀刻停止步骤的信息的方法。 在蚀刻过程中，激光束被照射在蚀刻溶液中沉没的样品上。 然后，计算机测量样品反射的激光束的强度，分析其干涉产生的周期信号，实时获取样品的蚀刻速度。 激光在湿蚀刻期间在样品上提供热能，并在样品和非接触部分的光束接触部分上发生不规则的蚀刻速度。 使用具有合适焦距的凸透镜可以在整个样品中获得均匀的蚀刻速度。