公开(公告)号：US20140039104A1

公开(公告)日：2014-02-06

申请号：US14009486

申请日：2012-07-27

Applicant: Hyun Seok Yang ,  Dae Woo Lee ,  Han Jong You ,  Chang Hun Han ,  Seong Lyong Kim

Inventor： Hyun Seok Yang ,  Dae Woo Lee ,  Han Jong You ,  Chang Hun Han ,  Seong Lyong Kim

IPC: C08L33/12 ,  C08F220/10

CPC classification number: C08L33/12 ,  C08F220/10 ,  C08F279/02 ,  C08F279/04 ,  C08L33/16 ,  C08L51/04 ,  C08L55/02 ,  C08F220/14

Abstract: Disclosed are an alkyl(meth)acrylate-based thermoplastic resin composition and a thermoplastic resin with modified scratch resistance and yellowness. The alkyl(meth)acrylate-based thermoplastic resin composition provides improved scratch resistance and low yellowness index while maintaining transparency, flowability, and impact strength, even when the total content of the vinyl cyan-based monomer contained in the resin composition is reduced to a level unattainable by conventional techniques, and the content of the alkyl(meth)acrylate-based monomer is increased.

Abstract translation: 公开了（甲基）丙烯酸烷基酯类热塑性树脂组合物和具有改善的耐划伤性和黄色性的热塑性树脂。 （甲基）丙烯酸烷基酯类热塑性树脂组合物，即使将树脂组合物中所含的乙烯基类青色系单体的总含量降低至一种（甲基）丙烯酸烷基酯类热塑性树脂组合物的总含量，也能够保持透明性，流动性，冲击强度， 通过常规技术难以达到的水平，并且（甲基）丙烯酸烷基酯类单体的含量增加。

公开(公告)号：US08623960B2

公开(公告)日：2014-01-07

申请号：US13355156

申请日：2012-01-20

Applicant: Eun-Jung Choi ,  Byoung-Il Kang ,  Chang-Hun Han ,  Jae-Bum Seo

Inventor： Eun-Jung Choi ,  Byoung-Il Kang ,  Chang-Hun Han ,  Jae-Bum Seo

IPC: C08L69/00 ,  C08L33/10 ,  C08L33/08 ,  G02B5/30 ,  C08J5/18

CPC classification number: C08L33/08 ,  Y10T428/10 ,  C08L69/00

Abstract: Provided are a resin composition including an acryl-based copolymer resin including an alkyl(meth)acrylate-based monomer and an imide-based monomer, additionally copolymerizable with a styrene-based monomer, and a polycarbonate-based resin having a melt index (MI) of 30 g/10 min or more under conditions of a load of 1.2 kg and a temperature of 300° C., a polarizer protective film including the resin composition, and a liquid crystal display including the polarizer protective film. The polarizer protective film according to the present invention has excellent heat resistance, transparency, and optical properties.

Abstract translation: 本发明提供一种树脂组合物，其包括可与苯乙烯类单体共聚的（甲基）丙烯酸烷基酯单体和酰亚胺系单体的丙烯酸类共聚物树脂和熔融指数（MI）的聚碳酸酯类树脂 ）在负载为1.2kg，温度为300℃的条件下为30g / 10分钟以上，含有该树脂组合物的偏振片保护膜，以及包含该偏振片保护膜的液晶显示装置。 根据本发明的偏振片保护膜具有优异的耐热性，透明性和光学性质。

公开(公告)号：US08568624B2

公开(公告)日：2013-10-29

申请号：US13202068

申请日：2010-02-18

Applicant: Su-Kyung Kim ,  Byoung-Il Kang ,  Dae-Woo Lee ,  Byoung-Kue Chun ,  Chang-Hun Han ,  Da-Eun Sung

Inventor： Su-Kyung Kim ,  Byoung-Il Kang ,  Dae-Woo Lee ,  Byoung-Kue Chun ,  Chang-Hun Han ,  Da-Eun Sung

IPC: F21V9/14 ,  G02B5/30 ,  G02C7/12 ,  G02B5/23 ,  C08L35/00 ,  C08L39/04

CPC classification number: G02F1/13363 ,  C08F220/18 ,  C08F220/30 ,  C08F220/52 ,  G02B1/04 ,  G02B1/105 ,  G02B1/14 ,  G02B5/305 ,  C08L33/10 ,  C08L33/08

Abstract: The present invention relates to an acrylic copolymer resin containing: 1) an alklyl (meth)acrylate-based monomer; 2) a (meth)acrylate-based monomer containing an aliphatic ring and/or an aromatic ring; and 3) at least an imide-based monomer or a styrene-based monomer, to a resin composition containing said acrylic copolymer resin and a resin containing an aromatic ring and/or an aliphatic ring in the main chain thereof, to an optical film comprising said resin composition, and to a liquid crystal display device comprising said optical film. The optical film according to the present invention has excellent heat resistance, optical transparency, etc.

Abstract translation: 本发明涉及丙烯酸共聚物树脂，其含有：（1）（甲基）丙烯酸烷基酯单体; 2）含有脂肪族环和/或芳香环的（甲基）丙烯酸酯类单体; 和3）至少一种酰亚胺类单体或苯乙烯类单体与含有所述丙烯酸共聚物树脂的树脂组合物和在其主链中含有芳香环和/或脂族环的树脂反应到光学膜，所述光学膜包含 所述树脂组合物和包含所述光学膜的液晶显示装置。 根据本发明的光学膜具有优异的耐热性，光学透明性等。

公开(公告)号：US08228409B2

公开(公告)日：2012-07-24

申请号：US12574785

申请日：2009-10-07

Applicant: Chang Hun Han

Inventor： Chang Hun Han

IPC: H04N5/335 ,  H01L21/00 ,  H01L31/062

CPC classification number: H01L27/14636 ,  H01L27/14632 ,  H01L27/14643

Abstract: Disclosed are an image sensor and a method for manufacturing the same. The image sensor includes readout circuitry and an inter-layer dielectric layer on a first substrate, a metal line in the inter-layer dielectric layer and electrically connected with the readout circuitry, a plurality of contact plugs on the metal line, and an image sensing device on the contact plugs. The image sensing device is electrically connected to the metal line through the plurality of contact plugs. The method for manufacturing an image sensor includes forming a readout circuitry on a first substrate, forming an inter-layer dielectric layer on the first substrate, forming a metal line in the inter-layer dielectric layer such that the metal line is electrically connected with the readout circuitry, forming a plurality of contact plugs on the metal line per unit pixel, and forming an image sensing device on the plurality of contact plugs.

Abstract translation: 公开了一种图像传感器及其制造方法。 图像传感器包括读出电路和第一衬底上的层间电介质层，层间电介质层中的金属线并与读出电路电连接，金属线上的多个接触插塞和图像感测 设备接触插头。 图像感测装置通过多个接触插塞电连接到金属线。 图像传感器的制造方法包括在第一基板上形成读出电路，在第一基板上形成层间电介质层，在层间电介质层中形成金属线，使金属线与 读出电路，在每单位像素的金属线上形成多个接触塞，以及在多个接触插塞上形成图像感测装置。

公开(公告)号：US08202757B2

公开(公告)日：2012-06-19

申请号：US12501341

申请日：2009-07-10

Applicant: Chang Hun Han

Inventor： Chang Hun Han

IPC: H01L21/00 ,  H01L21/44 ,  H01L21/311 ,  H01L31/062 ,  H01L31/113

CPC classification number: H01L27/14634 ,  H01L27/14603

Abstract: An image sensor includes readout circuitry on a first substrate, a metal line electrically connected with the readout circuitry, a dielectric on the metal line, an image sensing device on the dielectric, including first and second conductivity type layers, a contact plug in a via hole penetrating the image sensing device to connect the first conductivity type layer with the metal line, and a sidewall dielectric in the via hole at a sidewall of the second conductivity type layer.

Abstract translation: 图像传感器包括在第一基板上的读出电路，与读出电路电连接的金属线，金属线上的电介质，介质上的图像感测装置，包括第一和第二导电类型的层， 穿过图像感测装置的孔，以将第一导电类型层与金属线连接，以及在第二导电类型层的侧壁处的通孔中的侧壁电介质。

公开(公告)号：US08080825B2

公开(公告)日：2011-12-20

申请号：US12344438

申请日：2008-12-26

Applicant: Chang-Hun Han

Inventor： Chang-Hun Han

IPC: H01L31/02 ,  H01L31/0376 ,  H01L21/04

CPC classification number: H01L27/14634 ,  H01L27/14643 ,  H01L27/14683 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An image sensor may include a first substrate having circuitry including wires and a silicon layer formed on and/or over the first substrate to selectively contact the wires. The image sensor may include photodiodes bonded to the first substrate while contacting the silicon layer and electrically connected to the wires. Each unit pixel may be implemented having complicated circuitry without a reduction in photosensitivity. Additional on-chip circuitry may also be implanted in the design.

Abstract translation: 图像传感器可以包括具有包括导线的电路的第一基板和形成在第一基板上和/或上方的硅层，以选择性地接触导线。 图像传感器可以包括在与硅层接触并且电连接到电线时结合到第一衬底的光电二极管。 可以实现每个单位像素具有复杂的电路而不降低光敏性。 还可以在设计中植入附加的片上电路。

公开(公告)号：US07994554B2

公开(公告)日：2011-08-09

申请号：US12437373

申请日：2009-05-07

Applicant: Chang Hun Han

Inventor： Chang Hun Han

IPC: H01L23/02

CPC classification number: H01L27/14683 ,  H01L27/14603

Abstract: Disclosed are a CMOS image sensor and a manufacturing method thereof. The method includes the steps of: forming an isolation layer on a semiconductor substrate, defining an active region that includes a photo diode region and a transistor region; forming a gate in the transistor region, the gate including a gate electrode and a gate insulating layer; forming a first low-concentration diffusion region in the photo diode region; forming a second low-concentration diffusion region in the transistor region; forming a buffer layer over the substrate, the buffer layer covering the photo diode region; forming first and second insulating layers over the entire surface of the substrate, the first and second insulating layer having a different etching selectivity from each other; forming an insulating sidewall on sides of the gate electrode by selective removal of the second insulating layer; removing the first insulating layer from the transistor region; forming a high-concentration diffusion region in the exposed transistor region, partially overlapping the second low-concentration diffusion region; and forming a metal silicide layer on the high-concentration diffusion region.

Abstract translation: 公开了CMOS图像传感器及其制造方法。 该方法包括以下步骤：在半导体衬底上形成隔离层，限定包括光电二极管区域和晶体管区域的有源区域; 在所述晶体管区域中形成栅极，所述栅极包括栅极电极和栅极绝缘层; 在所述光电二极管区域中形成第一低浓度扩散区域; 在所述晶体管区域中形成第二低浓度扩散区域; 在所述衬底上形成缓冲层，所述缓冲层覆盖所述光电二极管区域; 在衬底的整个表面上形成第一和第二绝缘层，第一和第二绝缘层彼此具有不同的蚀刻选择性; 通过选择性地去除所述第二绝缘层在所述栅电极的侧面上形成绝缘侧壁; 从晶体管区域去除第一绝缘层; 在所述暴露的晶体管区域中形成高浓度扩散区域，部分地与所述第二低浓度扩散区域重叠; 在高浓度扩散区上形成金属硅化物层。

公开(公告)号：US20100110247A1

公开(公告)日：2010-05-06

申请号：US12610452

申请日：2009-11-02

Applicant: CHANG HUN HAN

Inventor： CHANG HUN HAN

IPC: H04N5/335 ,  H01L31/18

CPC classification number: H01L27/14632 ,  H01L27/14634 ,  H01L27/14636 ,  H04N5/369

Abstract: Provided are an image sensor and a method for manufacturing the same. The image sensor comprises a readout circuitry, an electrical junction region, a poly contact, an interconnection, and an image sensing device. The readout circuitry is formed on a first substrate. The electrical junction region is formed in the first substrate. The electrical junction region is electrically connected to the readout circuitry. The poly contact is formed on the electrical junction region. The interconnection is formed on the poly contact. The image sensing device is formed on the interconnection. The image sensing device is electrically connected to the readout circuitry through the interconnection, the poly contact, and the electrical junction region.

Abstract translation: 提供了一种图像传感器及其制造方法。 图像传感器包括读出电路，电接合区域，多接点，互连和图像感测设备。 读出电路形成在第一基板上。 电连接区形成在第一基板中。 电连接区域电连接到读出电路。 聚电接触形成在电连接区域上。 互连形成在聚触点上。 图像感测装置形成在互连上。 图像感测装置通过互连，多接触和电连接区域电连接到读出电路。

公开(公告)号：US20100103298A1

公开(公告)日：2010-04-29

申请号：US12574785

申请日：2009-10-07

Applicant: Chang Hun Han

Inventor： Chang Hun Han

IPC: H04N5/335 ,  H01L31/18

CPC classification number: H01L27/14636 ,  H01L27/14632 ,  H01L27/14643

Abstract: Disclosed are an image sensor and a method for manufacturing the same. The image sensor includes readout circuitry and an inter-layer dielectric layer on a first substrate, a metal line in the inter-layer dielectric layer and electrically connected with the readout circuitry, a plurality of contact plugs on the metal line, and an image sensing device on the contact plugs. The image sensing device is electrically connected to the metal line through the plurality of contact plugs. The method for manufacturing an image sensor includes forming a readout circuitry on a first substrate, forming an inter-layer dielectric layer on the first substrate, forming a metal line in the inter-layer dielectric layer such that the metal line is electrically connected with the readout circuitry, forming a plurality of contact plugs on the metal line per unit pixel, and forming an image sensing device on the plurality of contact plugs.

Abstract translation: 公开了一种图像传感器及其制造方法。 图像传感器包括读出电路和第一衬底上的层间电介质层，层间电介质层中的金属线并与读出电路电连接，金属线上的多个接触插塞和图像感测 设备接触插头。 图像感测装置通过多个接触插塞电连接到金属线。 图像传感器的制造方法包括在第一基板上形成读出电路，在第一基板上形成层间电介质层，在层间电介质层中形成金属线，使金属线与 读出电路，在每单位像素的金属线上形成多个接触塞，以及在多个接触插塞上形成图像感测装置。

公开(公告)号：US20100025801A1

公开(公告)日：2010-02-04

申请号：US12501341

申请日：2009-07-10

Applicant: Chang Hun HAN

Inventor： Chang Hun HAN

IPC: H01L31/101 ,  H01L31/18

CPC classification number: H01L27/14634 ,  H01L27/14603

Abstract: An image sensor includes readout circuitry on a first substrate, a metal line electrically connected with the readout circuitry, a dielectric on the metal line, an image sensing device on the dielectric, including first and second conductivity type layers, a contact plug in a via hole penetrating the image sensing device to connect the first conductivity type layer with the metal line, and a sidewall dielectric in the via hole at a sidewall of the second conductivity type layer.

Abstract translation: 图像传感器包括在第一基板上的读出电路，与读出电路电连接的金属线，金属线上的电介质，介质上的图像感测装置，包括第一和第二导电类型的层， 穿过图像感测装置的孔，以将第一导电类型层与金属线连接，以及在第二导电类型层的侧壁处的通孔中的侧壁电介质。