公开(公告)号：US20130043457A1

公开(公告)日：2013-02-21

申请号：US13459635

申请日：2012-04-30

Applicant: Dong Hun KANG ,  Sang Hyun Lee ,  Sung Yi Jung ,  Jong Pil Jeong

Inventor： Dong Hun KANG ,  Sang Hyun Lee ,  Sung Yi Jung ,  Jong Pil Jeong

IPC: H01L33/04

CPC classification number: H01L33/06 ,  H01L33/32 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: Provided are a light emitting device, a method of manufacturing the same, a light emitting device package, and a lighting system. The light emitting device includes: a first conductive semiconductor layer; a superlattice layer on the first conductive semiconductor layer; an active layer on the superlattice layer; and a second conductive semiconductor layer on the active layer. The superlattice layer comprises InxGa(1−x)N(0

Abstract translation: 提供了发光器件，其制造方法，发光器件封装和照明系统。 发光器件包括：第一导电半导体层; 在第一导电半导体层上的超晶格层; 在超晶格层上的活性层; 以及在所述有源层上的第二导电半导体层。 超晶格层包括掺杂有n型掺杂剂的In x Ga（1-x）N（0

公开(公告)号：US20120133275A1

公开(公告)日：2012-05-31

申请号：US13240760

申请日：2011-09-22

Applicant: Jae-Ho Lee ,  Dong-Won Han ,  Seung-Yong Song ,  Jin-Ho Kwack ,  Dae-Beom Shin ,  Dong-Hun Kang ,  Hyo-Jin Kim

Inventor： Jae-Ho Lee ,  Dong-Won Han ,  Seung-Yong Song ,  Jin-Ho Kwack ,  Dae-Beom Shin ,  Dong-Hun Kang ,  Hyo-Jin Kim

IPC: H01J5/10 ,  H01J9/26

CPC classification number: H01L51/5256 ,  H01L2251/5369

Abstract: In a flat panel display device and a method of manufacturing the same, the flat panel display device is manufactured by forming a display unit on a substrate, forming a hydrophobic barrier layer for preventing a material of an organic layer from flowing around the display unit, and forming a thin film sealing layer by alternately stacking an inorganic layer and the organic layer on the display unit. Accordingly, formation of an edge tail of the organic layer is prevented, thereby preventing penetration of external moisture.

Abstract translation: 在平板显示装置及其制造方法中，通过在基板上形成显示单元，形成用于防止有机层的材料流过显示单元的疏水性阻隔层来制造平板显示装置， 以及通过在显示单元上交替地堆叠无机层和有机层来形成薄膜密封层。 因此，防止有机层的边缘尾部的形成，从而防止外部水分的渗透。

公开(公告)号：US20110291116A1

公开(公告)日：2011-12-01

申请号：US13049795

申请日：2011-03-16

Applicant: Dong-Hun Kang ,  Min-Chul Suh ,  Dong-Won Han ,  Jin-Ho Kwack ,  Dae-Beom Shin ,  Hyo-Jin Kim

Inventor： Dong-Hun Kang ,  Min-Chul Suh ,  Dong-Won Han ,  Jin-Ho Kwack ,  Dae-Beom Shin ,  Hyo-Jin Kim

IPC: H01L51/52 ,  H01L51/56

CPC classification number: H01L51/56 ,  H01L27/3244 ,  H01L51/0011 ,  H01L51/5253

Abstract: An organic light emitting diode (OLED) display is disclosed. In one embodiment, the display includes i) a substrate, ii) a driving circuit formed on the substrate, iii) an organic light emitting diode formed on the substrate and electrically connected to the driving circuit, iv) an encapsulation thin film formed on the driving circuit and organic light emitting diode and v) a spacer formed on the substrate and surrounding the encapsulation thin film.

Abstract translation: 公开了一种有机发光二极管（OLED）显示器。 在一个实施例中，显示器包括i）衬底，ii）形成在衬底上的驱动电路，iii）形成在衬底上并电连接到驱动电路的有机发光二极管，iv）形成在衬底上的封装薄膜 驱动电路和有机发光二极管，以及v）形成在衬底上并围绕封装薄膜的间隔物。

公开(公告)号：US20110101343A1

公开(公告)日：2011-05-05

申请号：US12929324

申请日：2011-01-14

Applicant: Chang-jung Kim ,  I-hun Song ,  Dong-hun Kang ,  Young-soo Park

Inventor： Chang-jung Kim ,  I-hun Song ,  Dong-hun Kang ,  Young-soo Park

IPC: H01L29/12 ,  H01L33/16

CPC classification number: H01L29/7869

Abstract: A semiconductor device may include a composite represented by Formula 1 below as an active layer. x(Ga2O3).y(In2O3).z(ZnO)  Formula 1 wherein, about 0.75≦x/z≦about 3.15, and about 0.55≦y/z≦about 1.70.Switching characteristics of displays and driving characteristics of driving transistors may be improved by adjusting the amounts of a gallium (Ga) oxide and an indium (In) oxide mixed with a zinc (Zn) oxide and improving optical sensitivity.

Abstract translation: 半导体器件可以包括由下面的式1表示的复合物作为有源层。 x（Ga 2 O 3）y（In 2 O 3）z（ZnO）式1其中约0.75＆lt; lE; x / z＆nlE;约3.15和约0.55≤n1E; y /z≤n1E;约1.70。 可以通过调节与锌（Zn）氧化物混合的镓（Ga）氧化物和铟（In））的量来提高驱动晶体管的开关特性并提高光学灵敏度。

公开(公告)号：US20110101342A1

公开(公告)日：2011-05-05

申请号：US12929323

申请日：2011-01-14

Applicant: Chang-jung Kim ,  I-hun Song ,  Dong-hun Kang ,  Young-soo Park

Inventor： Chang-jung Kim ,  I-hun Song ,  Dong-hun Kang ,  Young-soo Park

IPC: H01L29/12 ,  H01L21/34 ,  H01L33/16

CPC classification number: H01L29/7869

Abstract: A semiconductor device may include a composite represented by Formula 1 below as an active layer. x(Ga2O3).y(In2O3).z(ZnO)  Formula 1 wherein, about 0.75≦x/z≦about 3.15, and about 0.55≦y/z≦about 1.70. Switching characteristics of displays and driving characteristics of driving transistors may be improved by adjusting the amounts of a gallium (Ga) oxide and an indium (In) oxide mixed with a zinc (Zn) oxide and improving optical sensitivity.

公开(公告)号：US07639524B2

公开(公告)日：2009-12-29

申请号：US11335618

申请日：2006-01-20

Applicant: Dong-Hun Kang ,  Jeong-Hee Han ,  Wan-Jun Park ,  Won-Joo Kim ,  Jae-Woong Hyun

Inventor： Dong-Hun Kang ,  Jeong-Hee Han ,  Wan-Jun Park ,  Won-Joo Kim ,  Jae-Woong Hyun

IPC: G11C11/34

CPC classification number: G11C13/025 ,  B82Y10/00 ,  G11C11/56 ,  G11C2213/17 ,  H01L29/42332 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7887 ,  H01L29/7923 ,  H01L51/0048 ,  H01L51/0554 ,  Y10S977/938 ,  Y10S977/943

Abstract: A memory device may include a channel including at least one carbon nanotube. A source and a drain may be arranged at opposing ends of the channel and may contact different parts of the channel. A first storage node may be formed under the channel, and a second storage node may be formed on the channel. A first gate electrode may be formed under the first storage node and a second gate electrode may be formed on the second storage node.

Abstract translation: 存储器件可以包括包括至少一个碳纳米管的通道。 源极和漏极可以布置在通道的相对端处并且可以接触通道的不同部分。 可以在信道下形成第一存储节点，并且可以在信道上形成第二存储节点。 第一栅电极可以形成在第一存储节点下方，并且第二栅电极可以形成在第二存储节点上。

公开(公告)号：US20090068782A1

公开(公告)日：2009-03-12

申请号：US12289192

申请日：2008-10-22

Applicant: Joo-han Chang ,  Dong-hun Kang ,  Young-kwan Cha ,  Wan-jun Park

Inventor： Joo-han Chang ,  Dong-hun Kang ,  Young-kwan Cha ,  Wan-jun Park

IPC: H01L21/00

CPC classification number: H01L27/115 ,  B82Y10/00 ,  G11C13/025 ,  G11C23/00 ,  G11C2213/16 ,  Y10S977/742 ,  Y10S977/743 ,  Y10S977/842

Abstract: A nano-elastic memory device and a method of manufacturing the same. The nano-elastic memory device may include a substrate, a plurality of lower electrodes arranged in parallel on the substrate, a support unit formed of an insulating material to a desired or predetermined thickness on the substrate having cavities that expose the lower electrodes, a nano-elastic body extending perpendicular from a surface of the lower electrodes in the cavities, and a plurality of upper electrodes formed on the support unit and perpendicularly crossing the lower electrodes over the nano-elastic bodies.

Abstract translation: 纳米弹性记忆装置及其制造方法。 纳米弹性存储装置可以包括基板，在基板上平行布置的多个下电极，在基板上具有期望或预定厚度的绝缘材料形成的支撑单元，该基板具有露出下电极的空腔， 在空腔中从下电极的表面垂直延伸的弹性体，以及形成在支撑单元上并与纳米弹性体上的下电极垂直交叉的多个上电极。

公开(公告)号：US07453085B2

公开(公告)日：2008-11-18

申请号：US11505970

申请日：2006-08-18

Applicant: Joo-han Chang ,  Dong-hun Kang ,  Young-kwan Cha ,  Wan-jun Park

Inventor： Joo-han Chang ,  Dong-hun Kang ,  Young-kwan Cha ,  Wan-jun Park

IPC: H01L29/06 ,  H01L29/08 ,  H01L31/0352

CPC classification number: H01L27/115 ,  B82Y10/00 ,  G11C13/025 ,  G11C23/00 ,  G11C2213/16 ,  Y10S977/742 ,  Y10S977/743 ,  Y10S977/842

Abstract: A nano-elastic memory device and a method of manufacturing the same. The nano-elastic memory device may include a substrate, a plurality of lower electrodes arranged in parallel on the substrate, a support unit formed of an insulating material to a desired or predetermined thickness on the substrate having cavities that expose the lower electrodes, a nano-elastic body extending perpendicular from a surface of the lower electrodes in the cavities, and a plurality of upper electrodes formed on the support unit and perpendicularly crossing the lower electrodes over the nano-elastic bodies.

Abstract translation: 纳米弹性记忆装置及其制造方法。 纳米弹性存储装置可以包括基板，在基板上平行布置的多个下电极，在基板上具有期望或预定厚度的绝缘材料形成的支撑单元，该基板具有露出下电极的空腔， 在空腔中从下电极的表面垂直延伸的弹性体，以及形成在支撑单元上并与纳米弹性体上的下电极垂直交叉的多个上电极。

公开(公告)号：US20080142796A1

公开(公告)日：2008-06-19

申请号：US11980454

申请日：2007-10-31

Applicant: Dong-hun Kang ,  I-hun Song ,  Chang-Jung Kim ,  Young-soo Park

Inventor： Dong-hun Kang ,  I-hun Song ,  Chang-Jung Kim ,  Young-soo Park

IPC: H01L29/10 ,  H01L21/16

CPC classification number: H01L29/22 ,  H01L29/26 ,  H01L29/47 ,  H01L29/872

Abstract: A zinc oxide (ZnO) group and method of forming the same are provided. The ZnO group diode may include a first electrode and a second electrode that are separated from each other, and an active layer formed of MxIn1-xZnO (wherein “M” is a Group III metal) between the first electrode and the second electrode. The first electrode may have a work function lower than the active layer. The second electrode may have a work function higher than the active layer.

Abstract translation: 提供氧化锌（ZnO）基团及其形成方法。 ZnO族二极管可以包括彼此分离的第一电极和第二电极，以及由M 1 x In 1 x x ZnO形成的有源层（其中“ M“是第III族金属）。 第一电极可具有低于有源层的功函数。 第二电极可具有比有源层高的功函数。

公开(公告)号：US20070252147A1

公开(公告)日：2007-11-01

申请号：US11785269

申请日：2007-04-17

Applicant: Chang-jung Kim ,  I-hun Song ,  Dong-hun Kang ,  Young-soo Park

Inventor： Chang-jung Kim ,  I-hun Song ,  Dong-hun Kang ,  Young-soo Park

IPC: H01L29/04

CPC classification number: H01L29/7869

Abstract: A semiconductor device may include a composite represented by Formula 1 below as an active layer. x(Ga2O3)·y(In2O3)·z(ZnO)  Formula 1wherein, about 0.75≦x/z≦about 3.15, and about 0.55≦y/z≦about 1.70. Switching characteristics of displays and driving characteristics of driving transistors may be improved by adjusting the amounts of a gallium (Ga) oxide and an indium (In) oxide mixed with a zinc (Zn) oxide and improving optical sensitivity.

Abstract translation: 半导体器件可以包括由下面的式1表示的复合物作为有源层。 <？in-line-formula description =“In-line Formulas”end =“lead”？> x（Ga 2 2 O 3 3）y（In < z（ZnO）式1 <？in-line-formula description =“In-line Formulas”end =“tail”？>其中，约0.75 <= x / z <=约3.15，约0.55≤y/z≤约1.70。 可以通过调节与锌（Zn）氧化物混合的镓（Ga）氧化物和铟（In））的量来提高驱动晶体管的开关特性并提高光学灵敏度。