LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD
    51.
    发明申请
    LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD 有权
    LITHOGRAPHIC装置和装置制造方法

    公开(公告)号:US20150131067A1

    公开(公告)日:2015-05-14

    申请号:US14398047

    申请日:2013-05-07

    CPC classification number: G03F7/70058 G03F7/70266 G03F7/70308 G03F9/7026

    Abstract: A field manipulator to provide high resolution control of position in the XY plane and/or focus control. The field manipulator includes a plate located between the patterning device and the substrate. Control of the XY position is provided by tilting of the plate, while control of the focus position may be provided by localized deformation of the plate. Both adjustments may be performed by one or more actuators that act upon one or more edges of the plate. In an embodiment, two substantially parallel plates are provided and focus control can be provided by changing the spacing between them. A liquid may be provided between the plates which may be temperature controlled to adjust the focus by changing the refractive index of the liquid.

    Abstract translation: 场操纵器,用于提供XY平面和/或聚焦控制中位置的高分辨率控制。 场操纵器包括位于图案形成装置和基板之间的板。 通过板的倾斜来提供XY位置的控制,同时可以通过板的局部变形来提供对焦位置的控制。 两个调整可以由作用于板的一个或多个边缘的一个或多个致动器执行。 在一个实施例中,提供两个基本上平行的板,并且可以通过改变它们之间的间距来提供焦点控制。 可以在板之间设置液体,其可以被温度控制以通过改变液体的折射率来调节焦点。

    Lithographic method and apparatus
    55.
    发明授权

    公开(公告)号:US09989864B2

    公开(公告)日:2018-06-05

    申请号:US15325406

    申请日:2015-06-11

    Abstract: A measurement method including using multiple radiation poles to illuminate a diffraction grating on a mask at a mask side of a projection system of a lithographic apparatus, coupling at least two different resulting diffraction orders per illumination pole through the projection system, using the projection system to project the diffraction orders onto a grating on a wafer such that a pair of combination diffraction orders is formed by diffraction of the diffraction orders, coupling the combination diffraction orders back through the projection system to detectors configured to measure the intensity of the combination diffraction orders, and using the measured intensity of the combination diffraction orders to measure the position of the wafer grating.

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