Lithographic Method and Apparatus
    10.
    发明申请
    Lithographic Method and Apparatus 有权
    平版印刷方法和装置

    公开(公告)号:US20150253679A1

    公开(公告)日:2015-09-10

    申请号:US14428023

    申请日:2013-09-17

    IPC分类号: G03F7/20

    摘要: A method of exposing a patterned area on a substrate using an EUV lithographic apparatus having a demagnification of about 5× and a numerical aperture of about 0.4 is disclosed. The method comprises exposing a first portion of the patterned area on the substrate using a first exposure, the first portion dimensions are significantly less than the dimensions of a conventional exposure, and exposing one or more additional portions of the patterned area on the substrate using one or more additional exposures, the additional portions having dimensions which are significantly less than the dimensions of a conventional exposure. The method further comprises repeating the above to expose a second patterned area on the substrate, the second patterned area being provided with the same pattern as the first patterned area, wherein a distance between centre points of the first and second patterned areas corresponds with a dimension of a conventional exposure.

    摘要翻译: 公开了一种使用EUV光刻设备将基板上的图案化区域曝光的方法,该光刻设备具有约5×的平均值和约0.4的数值孔径。 该方法包括使用第一曝光将基板上的图案化区域的第一部分曝光,第一部分尺寸明显小于常规曝光的尺寸,并且使用一个或多个曝光将基板上的图案化区域的一个或多个附加部分曝光 或更多额外的曝光,附加部分的尺寸明显小于常规曝光的尺寸。 该方法还包括重复上述步骤以暴露衬底上的第二图案化区域,第二图案化区域设置有与第一图案化区域相同的图案,其中第一和第二图案化区域的中心点之间的距离对应于尺寸 的常规曝光。