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公开(公告)号：US07581140B1
公开(公告)日：2009-08-25
申请号：US10323529
申请日：2002-12-18
IPC分类号： G06F11/00
CPC分类号： G05B19/41875 , G05B2219/37224 , H01L22/20 , Y02P90/22 , Y02P90/86
摘要： A method and apparatus are provided for initiating test runs based on a fault detection result. The method comprises receiving operational data associated with processing of a workpiece by a processing tool, processing the operational data to determine fault detection results; and causing a test run to be performed based on at least a portion of the fault detection results.
摘要翻译： 提供了一种基于故障检测结果启动测试运行的方法和装置。 该方法包括：通过处理工具接收与工件相关的操作数据，处理操作数据以确定故障检测结果; 并且基于所述故障检测结果的至少一部分进行测试运行。
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公开(公告)号：US07067333B1
公开(公告)日：2006-06-27
申请号：US10186145
申请日：2002-06-28
CPC分类号： G05B17/02
摘要： A method for controlling a process includes determining incoming state information associated with the process. A plurality of control models associated with the process is provided. A confidence metric is determined for each of the control models based on the incoming state information. The one of the plurality of control models having the highest associated confidence metric is selected. A control action for determining at least one parameter in an operating recipe used to implement the process is generated using the selected control model. A system includes a process tool and a process controller. The process tool is configured to process a workpiece in accordance with an operating recipe. The process controller is configured to determine incoming state information associated with processing the workpiece, determine a confidence metric for each of a plurality of control models based on the incoming state information, select the one of the plurality of control models having the highest associated confidence metric, and generate a control action for determining at least one parameter in the operating recipe using the selected control model.
摘要翻译： 用于控制过程的方法包括确定与该过程相关联的传入状态信息。 提供与该过程相关联的多个控制模型。 基于传入状态信息为每个控制模型确定置信度量度。 选择具有最高相关置信度度量的多个控制模型中的一个。 使用所选择的控制模型来生成用于确定用于实现该过程的操作配方中的至少一个参数的控制动作。 系统包括处理工具和过程控制器。 处理工具被配置为根据操作配方处理工件。 过程控制器被配置为确定与处理工件相关联的进入状态信息，基于输入状态信息确定多个控制模型中的每一个的置信度量度，选择具有最高相关置信度度量的多个控制模型中的一个 并且使用所选择的控制模型生成用于确定操作配方中的至少一个参数的控制动作。
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53.发明授权公开(公告)号：US06738682B1
公开(公告)日：2004-05-18
申请号：US10210753
申请日：2002-07-31
申请人： Alexander J. Pasadyn
发明人： Alexander J. Pasadyn
IPC分类号： G06F1900
CPC分类号： G05B19/41865 , G05B13/04 , G05B2219/32297 , G06Q10/06311 , Y02P80/114 , Y02P90/20
摘要： A method for scheduling activities in a manufacturing system includes defining a plurality of observed states associated with the manufacturing system. State estimates are generated for the observed states. Uncertainty values for the state estimates are generated. A plurality of candidate schedules for performing activities in the manufacturing system is identified. Changes to the uncertainty values are predicted based on the candidate schedules. One of the candidate schedules is selected based on the predicted changes to the uncertainty values.
摘要翻译： 一种用于在制造系统中调度活动的方法包括定义与制造系统相关联的多个观察状态。 对观察到的状态产生状态估计。 生成状态估计的不确定性值。 识别用于在制造系统中执行活动的多个候选时间表。 根据候选人时间表预测不确定性值的变化。 基于对不确定性值的预测变化来选择候选日程之一。
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54.发明授权Use of slurry waste composition to determine the amount of metal removed during chemical mechanical polishing, and system for accomplishing same 失效使用浆料废料组合物来确定在化学机械抛光过程中去除的金属量，以及完成相同的系统公开(公告)号：US06764868B1
公开(公告)日：2004-07-20
申请号：US09909112
申请日：2001-07-19
IPC分类号： H01L2166
CPC分类号： B24B37/013 , B24B37/042 , B24B49/00
摘要： In general, the present invention is directed to a method of using slurry waste composition to determine the amount of metal removed during chemical mechanical polishing processes, and a system for accomplishing same. In one embodiment, the method comprises providing a substrate having a metal layer formed thereabove, performing a chemical mechanical polishing process on the layer of metal in the presence of a polishing slurry, measuring at least a concentration of a material comprising the metal layer in the polishing slurry used during said polishing process after at least some of said polishing process has been performed, and determining a thickness of the layer of metal removed during the polishing process based upon at least the measured concentration of the material comprising the metal layer. In another embodiment, the present invention is directed to a system that is comprised of a chemical mechanical polishing tool for performing a chemical mechanical polishing process on a metal layer in the presence of a polishing slurry, a concentration monitor for measuring a concentration of a material comprising the metal layer in the polishing slurry after at least one of the polishing process has been performed, and a controller for receiving the measured concentration and determining a thickness of the layer of metal removed during the polishing process based upon at least the measured concentration of the material comprising the layer of metal.
摘要翻译： 通常，本发明涉及一种使用浆料废料组合物来确定在化学机械抛光过程中去除的金属的量的方法和用于实现其的系统。 在一个实施方案中，该方法包括提供具有在其上形成的金属层的基材，在抛光浆料存在下对该金属层进行化学机械抛光工艺，测量至少一种包含金属层的材料的浓度 在至少一些所述抛光工艺已经进行之后，在抛光过程中使用的抛光浆料，以及至少基于所测量的包括金属层的材料的浓度，确定在抛光过程中去除的金属层的厚度。 在另一个实施例中，本发明涉及一种系统，该系统包括用于在抛光浆料存在下对金属层进行化学机械抛光工艺的化学机械抛光工具，用于测量材料浓度的浓度监测器 在至少一次抛光处理之后，在抛光浆料中包括金属层，以及控制器，用于接收测量的浓度并确定在抛光过程中除去的金属层的厚度，至少基于所测量的浓度 该材料包括金属层。
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55.发明授权公开(公告)号：US06588007B1
公开(公告)日：2003-07-01
申请号：US09753705
申请日：2001-01-03
IPC分类号： G06F1750
CPC分类号： H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： A technique for processing a wafer in a semiconductor manufacturing process are disclosed. The method comprises first collecting a set of processing rate data from a multi-station processing tool, the set including process rate data from at least two stations in the processing tool. The collected processing rate data is then communicated to a controller that autonomously compares the processing rate data to determine whether to adjust a process parameter. The method then adjusts the process parameter for at least one station to match the process endpoint for the at least one station.
摘要翻译： 公开了一种在半导体制造工艺中处理晶片的技术。 该方法包括首先从多工位处理工具收集一组处理速率数据，该组包括处理工具中至少两个站的处理速率数据。 然后将收集的处理速率数据传送到控制器，该控制器自主地比较处理速率数据以确定是否调整过程参数。 该方法然后调整至少一个站的过程参数以匹配至少一个站的过程端点。
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56.发明授权Method of modeling and controlling the endpoint of chemical mechanical polishing operations performed on a process layer, and system for accomplishing same 有权对在工艺层上进行的化学机械抛光操作的终点进行建模和控制的方法以及用于实现其的系统公开(公告)号：US06534328B1
公开(公告)日：2003-03-18
申请号：US09909162
申请日：2001-07-19
IPC分类号： H01L2100
CPC分类号： B24B37/013 , B24B37/042 , B24B49/05 , H01L21/67253
摘要： The present invention is generally directed to a method of modeling and controlling the endpoint of chemical mechanical polishing operations performed on a process layer, and a system for accomplishing same. In one illustrative embodiment, the method comprises providing a first wafer having a process layer formed thereabove, determining a duration of an endpoint polishing process performed on the process layer on the wafer, providing a second wafer having a process layer formed thereabove, and modifying at least one parameter of the endpoint polishing process to be performed on the process layer formed above the second wafer based upon a variance between the determined duration of the endpoint polishing process performed on the process layer on the first wafer and a target value for the duration of the endpoint polishing process.
摘要翻译： 本发明一般涉及建模和控制在处理层上执行的化学机械抛光操作的终点的方法，以及用于实现其的系统。 在一个说明性实施例中，该方法包括提供具有在其上形成的处理层的第一晶片，确定在晶片上对处理层执行的端点抛光工艺的持续时间，提供具有形成在其上的处理层的第二晶片， 基于在所确定的在第一晶片上的处理层上执行的端点抛光工艺的持续时间与在第一晶片上的处理层的持续时间之间的差异，在第二晶片上形成的处理层上执行的端点抛光工艺的至少一个参数 端点抛光工艺。
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57.发明授权Method and apparatus for using a dynamic control model to compensate for a process interrupt 有权用于使用动态控制模型来补偿过程中断的方法和装置公开(公告)号：US06725121B1
公开(公告)日：2004-04-20
申请号：US09864692
申请日：2001-05-24
IPC分类号： G06F1900
CPC分类号： G05B19/41865 , G05B2219/32237 , G05B2219/32249 , Y02P90/20 , Y02P90/86
摘要： A method for processing an interrupted workpiece includes providing a dynamic control model defining the processing characteristics of a processing tool throughout a processing run; providing a partially processed workpiece; determining an extent of processing metric for the partially processed workpiece; and determining at least one operating recipe parameter of the processing tool based on the dynamic control model and the extent of processing metric. A manufacturing system includes a processing tool and a process controller. The processing tool is adapted to process a partially processed workpiece in accordance with an operating recipe. The process controller is adapted to determine an extent of processing metric for the partially processed workpiece and determine at least one parameter of the operating recipe based on a dynamic control model defining the processing characteristics of the processing tool throughout a processing run and the extent of processing metric.
摘要翻译： 一种用于处理中断的工件的方法包括提供定义整个处理过程中处理工具的处理特性的动态控制模型; 提供部分加工的工件; 确定部分加工的工件的加工度量的程度; 以及基于所述动态控制模型和所述处理度量的程度来确定所述处理工具的至少一个操作配方参数。 制造系统包括处理工具和过程控制器。 处理工具适于根据操作配方处理部分处理的工件。 过程控制器适于确定部分处理的工件的处理度量的程度，并且基于在整个处理运行中定义处理工具的处理特性的动态控制模型以及处理程度来确定操作配方的至少一个参数 度量。
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58.发明授权Method and apparatus for wafer-to-wafer control with partial measurement data 有权具有部分测量数据的晶圆到晶片控制的方法和装置公开(公告)号：US06708129B1
公开(公告)日：2004-03-16
申请号：US10023225
申请日：2001-12-13
IPC分类号： G06F1900
CPC分类号： H01L21/67253
摘要： A method and an apparatus for performing a process control using partial measurement data. A process operation is performed on a semiconductor wafer. Inline metrology data related to the process of the semiconductor wafer is acquired. A partial measurement data acquisition process is performed based upon the inline metrology data, the partial measurement data acquisition process comprising determining a time period for acquiring the inline metrology data, determining a number of wafers to be sampled based upon the time period, and determining a number of wafer sites for data acquisition. At least one of a feedback adjustment on a second semiconductor wafer and a feed-forward adjustment relating to a subsequent processing of the first semiconductor wafer based upon the partial measurement data acquisition process is performed.
摘要翻译： 一种使用部分测量数据执行过程控制的方法和装置。 在半导体晶片上进行处理操作。 获取与半导体晶片的工艺相关的内联测量数据。 基于内联计量数据执行部分测量数据获取过程，部分测量数据获取过程包括确定用于获取在线测量数据的时间段，基于该时间段确定要采样的晶片数量，以及确定 用于数据采集的晶圆站点数。 执行基于部分测量数据获取处理的第二半导体晶片上的反馈调整和与第一半导体晶片的后续处理有关的前馈调整中的至少一个。
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公开(公告)号：US06540591B1
公开(公告)日：2003-04-01
申请号：US09837606
申请日：2001-04-18
IPC分类号： B24B100
CPC分类号： B24B37/013 , B24B21/10 , B24B37/042 , B24B49/04
摘要： A method for polishing wafers includes providing a wafer having a process layer formed thereon; providing a polishing tool having a plurality of control zones and being adapted to polish the process layer based on an operating recipe, the operating recipe having a control variable corresponding to each of the control zones; measuring a pre-polish thickness profile of the process layer; comparing the pre-polish thickness profile to a target thickness profile to determine a desired removal profile; determining values for the control variables associated with the control zones based on the desired removal profile; and modifying the operating recipe of the polishing tool based on the values determined for the control variables. A processing line includes a polishing tool, a metrology tool, and a process controller. The polishing tool is adapted to polish a wafer having a process layer formed thereon based on an operating recipe. The polishing tool includes a plurality of control zones and the operating recipe includes a control variable corresponding to each of the control zones. The metrology tool is adapted to measure a pre-polish thickness profile of the process layer. The process controller is adapted to compare the pre-polish thickness profile to a target thickness profile to determine a desired removal profile, determine values for the control variables associated with the control zones based on the desired removal profile, and modify the operating recipe of the polishing tool based on the values determined for the control variables.
摘要翻译： 抛光晶片的方法包括提供其上形成有工艺层的晶片; 提供具有多个控制区域并且适于基于操作配方抛光所述处理层的抛光工具，所述操作配方具有对应于每个所述控制区域的控制变量; 测量处理层的预抛光厚度轮廓; 将预抛光厚度轮廓与目标厚度轮廓进行比较以确定期望的移除轮廓; 基于期望的移除轮廓来确定与控制区域相关联的控制变量的值; 并且基于为控制变量确定的值来修改抛光工具的操作配方。 处理线包括抛光工具，计量工具和过程控制器。 抛光工具适于基于操作配方抛光其上形成有工艺层的晶片。 抛光工具包括多个控制区，操作配方包括对应于每个控制区的控制变量。 测量工具适用于测量工艺层的预抛光厚度轮廓。 过程控制器适于将预抛光厚度分布与目标厚度分布进行比较以确定期望的去除曲线，基于期望的去除曲线来确定与控制区域相关联的控制变量的值，并修改其中的操作配方 基于为控制变量确定的值的抛光工具。
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