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164 条记录 (耗时 0.056 秒)

    Method for fabricating semiconductor film and semiconductor device and laser processing apparatus
    51.
    发明授权
    Method for fabricating semiconductor film and semiconductor device and laser processing apparatus 有权
    半导体膜和半导体器件的制造方法以及激光加工装置

    公开(公告)号：US07232715B2

    公开(公告)日：2007-06-19

    申请号：US10706978

    申请日：2003-11-14

    申请人： Tatsuya Arao ,  Shunpei Yamazaki

    发明人： Tatsuya Arao ,  Shunpei Yamazaki

    IPC分类号： H01L21/84

    CPC分类号： H01L21/02686 ,  B23K26/0732 ,  B23K26/0738 ,  B23K26/0838 ,  H01L21/02672 ,  H01L21/2026 ,  H01L21/67017 ,  H01L21/67253

    摘要： A technique to control segregation of impurities when reforming crystallinity and crystallization of a semiconductor film by using a laser beam irradiation is provided. The present invention is to irradiate the substrate with applying ultrasonic vibration while keeping the end portion of the substrate in space. The substrate on which a semiconductor film is formed is kept onto the stage provided with opening pores, and floated by spouting gas from opening pores. Supersonic vibration can be efficiently provided to the substrate by irradiating with a laser beam with ultrasonic vibration while keeping the end portion of the substrate.

    摘要翻译： 提供了通过使用激光束照射来改变结晶度和半导体膜的结晶时的杂质偏析的技术。 本发明是在保持基板的端部空间的同时照射基板施加超声波振动。 其上形成有半导体膜的基板保持在具有开口孔的台上，并且通过从开孔喷射气体而浮起。 通过在保持基板的端部的同时用超声波振动照射激光，可以有效地向基板提供超音速振动。

    Light emitting device
    53.
    发明授权
    Light emitting device 有权

    公开(公告)号：US08546825B2

    公开(公告)日：2013-10-01

    申请号：US13555292

    申请日：2012-07-23

    申请人： Shunpei Yamazaki ,  Jun Koyama ,  Tatsuya Arao ,  Munehiro Azami

    发明人： Shunpei Yamazaki ,  Jun Koyama ,  Tatsuya Arao ,  Munehiro Azami

    IPC分类号： H01L33/00

    CPC分类号： H01L27/3265 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/3246 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/78633

    摘要： A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving.

    Method for fabricating semiconductor film and semiconductor device and laser processing apparatus
    54.
    发明授权
    Method for fabricating semiconductor film and semiconductor device and laser processing apparatus 有权
    半导体膜和半导体器件的制造方法以及激光加工装置

    公开(公告)号：US08106330B2

    公开(公告)日：2012-01-31

    申请号：US11808043

    申请日：2007-06-06

    申请人： Tatsuya Arao ,  Shunpei Yamazaki

    发明人： Tatsuya Arao ,  Shunpei Yamazaki

    IPC分类号： B23K26/02

    CPC分类号： H01L21/02686 ,  B23K26/0732 ,  B23K26/0738 ,  B23K26/0838 ,  H01L21/02672 ,  H01L21/2026 ,  H01L21/67017 ,  H01L21/67253

    摘要： A technique to control segregation of impurities when reforming crystallinity and crystallization of a semiconductor film by using a laser beam irradiation is provided. The present invention is to irradiate the substrate with applying ultrasonic vibration while keeping the end portion of the substrate in space. The substrate on which a semiconductor film is formed is kept onto the stage provided with opening pores, and floated by spouting gas from opening pores. Supersonic vibration can be efficiently provided to the substrate by irradiating with a laser beam with ultrasonic vibration while keeping the end portion of the substrate.

    摘要翻译： 提供了通过使用激光束照射来改变结晶度和半导体膜的结晶时的杂质偏析的技术。 本发明是在保持基板的端部空间的同时照射基板施加超声波振动。 其上形成有半导体膜的基板保持在具有开口孔的台上，并且通过从开孔喷射气体而浮起。 通过在保持基板的端部的同时用超声波振动照射激光，可以有效地向基板提供超音速振动。

    LIGHT EMITTING DEVICE
    55.
    发明申请
    LIGHT EMITTING DEVICE 有权
    发光装置

    公开(公告)号：US20110006306A1

    公开(公告)日：2011-01-13

    申请号：US12879032

    申请日：2010-09-10

    申请人： Shunpei Yamazaki ,  Jun Koyama ,  Tatsuya Arao ,  Munehiro Azami

    发明人： Shunpei Yamazaki ,  Jun Koyama ,  Tatsuya Arao ,  Munehiro Azami

    IPC分类号： H01L33/00

    CPC分类号： H01L27/3265 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/3246 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/78633

    摘要： A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving.

    摘要翻译： 提供一种可以防止由于泄漏或其它原因引起的栅极电压变化并且同时可以防止开口率降低的发光器件。 电容器存储器由连接布线，绝缘膜和电容布线形成。 连接布线形成在栅电极和像素的TFT的有源层上，并与有源层连接。 绝缘膜形成在连接布线上。 电容布线形成在绝缘膜上。 这种结构使得电容器存储与TFT重叠，从而在保持开口率降低的同时增加电容器存储的容量。 因此，可以避免由于泄漏或其他原因导致的栅极电压的变化，以防止OLED的亮度变化和模拟驱动中屏幕的闪烁。

    Semiconductor device and manufacturing method thereof
    58.
    发明授权
    Semiconductor device and manufacturing method thereof 有权
    半导体装置及其制造方法

    公开(公告)号：US07151015B2

    公开(公告)日：2006-12-19

    申请号：US09852672

    申请日：2001-05-11

    申请人： Hideomi Suzawa ,  Koji Ono ,  Toru Takayama ,  Tatsuya Arao ,  Shunpei Yamazaki

    发明人： Hideomi Suzawa ,  Koji Ono ,  Toru Takayama ,  Tatsuya Arao ,  Shunpei Yamazaki

    IPC分类号： H01L21/00 ,  H01L21/84

    CPC分类号： H01L27/124 ,  H01L21/32136 ,  H01L27/1214 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78684 ,  H01L2029/7863

    摘要： There has been a problem that the manufacturing process is complicated and the number of processes is increased when a TFT with an LDD structure or a TFT with a GOLD structure is formed. In a method of manufacturing a semiconductor device, after low concentration impurity regions (24, 25) are formed in a second doping process, a width of the low concentration impurity region which is overlapped with the third electrode (18c) and a width of the low concentration impurity region which is not overlapped with the third electrode can be freely controlled by a fourth etching process. Thus, in a region overlapped with the third electrode, a relaxation of electric field concentration is achieved and then a hot carrier injection can be prevented. And, in the region which is not overlapped with the third electrode, the off-current value can be suppressed.

    摘要翻译： 当形成具有LDD结构的TFT或具有GOLD结构的TFT时，存在制造过程复杂并且处理次数增加的问题。 在制造半导体器件的方法中，在第二掺杂工艺中形成低浓度杂质区（24,25）之后，与第三电极（18c）重叠的低浓度杂质区的宽度和 可以通过第四蚀刻工艺来自由地控制不与第三电极重叠的低浓度杂质区域。 因此，在与第三电极重叠的区域中，实现电场浓度的松弛，然后可以防止热载流子注入。 并且，在不与第三电极重叠的区域中，可以抑制截止电流值。

    Light emitting device
    60.
    发明授权
    Light emitting device 有权
    发光装置

    公开(公告)号：US08039853B2

    公开(公告)日：2011-10-18

    申请号：US12879032

    申请日：2010-09-10

    申请人： Shunpei Yamazaki ,  Jun Koyama ,  Tatsuya Arao ,  Munehiro Azami

    发明人： Shunpei Yamazaki ,  Jun Koyama ,  Tatsuya Arao ,  Munehiro Azami

    IPC分类号： H01L33/00

    CPC分类号： H01L27/3265 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/3246 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/78633

    摘要： A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving.

    摘要翻译： 提供一种可以防止由于泄漏或其它原因引起的栅极电压变化并且同时可以防止开口率降低的发光器件。 电容器存储器由连接布线，绝缘膜和电容布线形成。 连接布线形成在栅电极和像素的TFT的有源层上，并与有源层连接。 绝缘膜形成在连接布线上。 电容布线形成在绝缘膜上。 这种结构使得电容器存储与TFT重叠，从而在保持开口率降低的同时增加电容器存储的容量。 因此，可以避免由于泄漏或其他原因导致的栅极电压的变化，以防止OLED的亮度变化和模拟驱动中屏幕的闪烁。