公开(公告)号：US07639457B1

公开(公告)日：2009-12-29

申请号：US10788765

申请日：2004-02-27

申请人： Yingjian Chen ,  Wei Zhang ,  Jinqiu Zhang ,  Haifeng Wang ,  Satoru Araki ,  Mohamad T. Krounbi

发明人： Yingjian Chen ,  Wei Zhang ,  Jinqiu Zhang ,  Haifeng Wang ,  Satoru Araki ,  Mohamad T. Krounbi

IPC分类号： G11B5/39 ,  G11B5/127

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/3163 ,  G11B5/3932 ,  G11B2005/3996 ,  H01F10/3272

摘要： A magnetic sensor is disclosed comprising an antiferromagnetic layer; a first ferromagnetic layer disposed over the antiferromagnetic layer, the first ferromagnetic layer having a magnetization that is pinned by the antiferromagnetic layer; a second ferromagnetic layer disposed over the first ferromagnetic layer, the second ferromagnetic layer having a magnetization that rotates due to an applied magnetic field; a third ferromagnetic layer disposed adjacent to an end of the second ferromagnetic layer, the third ferromagnetic layer having a primarily in-plane magnetization providing a magnetic field to stabilize the end of the second ferromagnetic layer; an amorphous, metallic, nonmagnetic underlayer disposed adjacent to the antiferromagnetic layer; and a crystalline seed layer disposed between the underlayer and the third ferromagnetic layer, the seed layer having a crystalline structure that promotes the in-plane magnetization of the third ferromagnetic layer.

摘要翻译： 公开了一种磁传感器，其包括反铁磁层; 设置在所述反铁磁层上的第一铁磁层，所述第一铁磁层具有由所述反铁磁层固定的磁化; 设置在所述第一铁磁层上的第二铁磁层，所述第二铁磁层具有由施加的磁场旋转的磁化; 与所述第二铁磁层的端部相邻设置的第三铁磁层，所述第三铁磁层具有主要的面内磁化，提供磁场以稳定所述第二铁磁层的端部; 邻近反铁磁层设置的无定形金属非磁性底层; 以及设置在所述底层和所述第三铁磁层之间的结晶种子层，所述种子层具有促进所述第三铁磁层的平面内磁化的晶体结构。

公开(公告)号：US07522377B1

公开(公告)日：2009-04-21

申请号：US11009753

申请日：2004-12-10

申请人： Hai Jiang ,  Kyusik Sin ,  Yingjian Chen

发明人： Hai Jiang ,  Kyusik Sin ,  Yingjian Chen

IPC分类号： G11B5/147

CPC分类号： G11B5/1278 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/313 ,  G11B5/3909 ,  G11B5/3967 ,  G11B2005/3996 ,  Y10T428/1193

摘要： A magnetic write head includes a seed layer and a magnetic layer on the seed layer. The seed layer includes seed-layer grains having either a face-centered cubic (fcc) crystalline structure with a surface plane substantially oriented in a [111] direction or a hexagonal-close-packed (hcp) crystalline structure with a surface plane substantially oriented in a [0001] direction. The magnetic layer includes magnetic-layer grains having a body-centered-cubic (bcc) crystalline structure with a surface plane substantially oriented in a [110] direction.

摘要翻译： 磁写头包括种子层和种子层上的磁性层。 种子层包括种子层晶粒，其具有表面平面（fcc）晶体结构，其表面平面大体上沿[111]方向取向或六方密堆积（hcp）结晶结构，表面平面基本取向 沿[0001]方向。 磁性层包括具有以[110]方向大致取向的表面的体心立方（bcc）晶体结构的磁性层晶粒。

公开(公告)号：US07466523B1

公开(公告)日：2008-12-16

申请号：US10617015

申请日：2003-07-10

申请人： Yingjian Chen

发明人： Yingjian Chen

IPC分类号： G11B5/39 ,  B05D3/00 ,  D01F9/12 ,  G11C11/02

CPC分类号： G11B5/3906 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B2005/3996 ,  G11C11/54 ,  G11C13/025 ,  H01F10/3254 ,  H01F41/307 ,  Y10S977/742

摘要： Present invention discloses novel designs of carbon nanotube spin valve structures for incorporation into magnetic storage and magnetic sensing devices, such as magnetic read head, MRAM, and magnetic field sensor. One of the designs is an in-stack carbon nanotube spin valve, which consists of a ferromagnetic free layer and a ferromagnetic pinned layer. The two layers are physically separated, although they reside in parallel planes. A single or plurality of vertically aligned carbon nanotubes are in between the two layers, and in electrical contact with both. The other design is a planar carbon nanotube spin valve, which consists of ferromagnetic free layer and pinned layer in substantially the same plane. They are electrically connected by in-plane aligned carbon nanotubes, which reside in between. The methods of fabricating the magnetic read head and MRAM devices utilizing these types of carbon nanotube spin valves are also described.

摘要翻译： 本发明公开了用于结合到磁存储器中的碳纳米管自旋阀结构的新颖设计和诸如磁读头，MRAM和磁场传感器的磁感测装置。 其中一种设计是叠层碳纳米管自旋阀，其由铁磁性自由层和铁磁性钉扎层组成。 两层物理分离，尽管它们位于平行的平面上。 单个或多个垂直排列的碳纳米管位于两层之间，并与两者电接触。 另一种设计是平面碳纳米管自旋阀，其由基本相同的平面内的铁磁性自由层和钉扎层组成。 它们通过位于其间的面内对准的碳纳米管电连接。 还描述了使用这些类型的碳纳米管旋转阀制造磁读头和MRAM器件的方法。

公开(公告)号：US07375926B1

公开(公告)日：2008-05-20

申请号：US11779785

申请日：2007-07-18

申请人： Kroum S. Stoev ,  Francis H. Liu ,  Yugang Wang ,  Yingjian Chen

发明人： Kroum S. Stoev ,  Francis H. Liu ,  Yugang Wang ,  Yingjian Chen

IPC分类号： G11B5/187

CPC分类号： G11B5/1871 ,  G11B5/3116 ,  G11B5/3146 ,  G11B5/3967

摘要： A magnetic head for writing information on a relatively-moving medium includes a first substantially flat soft magnetic pole layer and a second substantially flat pole layer with at least one coil layer between them. The pole layers are magnetically coupled in a core region and spaced by more than one micron from one other. A soft magnetic pedestal adjoins the first pole layer adjacent to a medium-facing surface of the head, and a first high magnetic saturation layer adjoins the pedestal. A second high magnetic saturation layer adjoins the second pole layer. The first high magnetic saturation layer has a first throat height and the second high magnetic saturation layer extends from the medium-facing surface only to a second throat height. The first and second throat heights are within about one and one-half microns from the medium-facing surface and are essentially equal.

摘要翻译： 用于在相对移动的介质上写入信息的磁头包括第一基本平坦的软磁极层和在它们之间具有至少一个线圈层的第二基本平坦的极性层。 磁极层磁芯耦合在磁芯区域并彼此间隔超过一微米。 软磁座与第一磁极层相邻，与磁头的介质表面相邻，第一高磁饱和层邻接基座。 第二高磁饱和层邻接第二极层。 第一高磁饱和层具有第一喉部高度，而第二高磁饱和层从介质中的表面延伸到第二喉部高度。 第一和第二喉部高度距离面向介质的表面大约一个半微米，并且基本相等。

公开(公告)号：US07296339B1

公开(公告)日：2007-11-20

申请号：US10936921

申请日：2004-09-08

申请人： Danning Yang ,  Yingjian Chen ,  Brant Nease ,  Kyusik Sin

发明人： Danning Yang ,  Yingjian Chen ,  Brant Nease ,  Kyusik Sin

IPC分类号： G11B5/127 ,  H04R31/00

CPC分类号： G11B5/3116 ,  G11B5/1278 ,  G11B5/3163 ,  G11B5/3169 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A method and system for manufacturing a perpendicular magnetic recording head is disclosed. The method and system include providing a chemical mechanical planarization (CMP) uniformity structure having an aperture therein and forming a perpendicular magnetic recording pole within the aperture. The CMP uniformity structure may include a CMP barrier layer. The method and system further include fabricating an insulator after formation of the perpendicular magnetic recording pole and performing a CMP to remove a portion of the insulator, expose a portion of the perpendicular magnetic recording pole and planarize an exposed surface of the perpendicular magnetic recording head.

摘要翻译： 公开了用于制造垂直磁记录头的方法和系统。 该方法和系统包括提供其中具有孔的化学机械平面化（CMP）均匀性结构，并在孔内形成垂直的磁记录极。 CMP均匀性结构可以包括CMP阻挡层。 所述方法和系统还包括在形成垂直磁记录极之后制造绝缘体，并执行CMP以去除绝缘体的一部分，暴露垂直磁记录极的一部分并平面化垂直磁记录头的暴露表面。

公开(公告)号：US06958885B1

公开(公告)日：2005-10-25

申请号：US09745708

申请日：2000-12-21

申请人： Yingjian Chen ,  Kyusik Sin ,  Ronald Barr

发明人： Yingjian Chen ,  Kyusik Sin ,  Ronald Barr

IPC分类号： G11B5/127 ,  G11B5/147 ,  G11B5/31 ,  G11B5/39

CPC分类号： G11B5/3967 ,  G11B5/3106 ,  G11B5/313 ,  Y10T29/49032

摘要： A computer disk drive (22) having a write head (52) which includes a coil (38), a photoresist insulation layer (66) formed on the coil (38), and an insulation shell layer (102) which is formed on the photoresist insulation layer (66). In the first preferred embodiment (100), the top pole (42) of the write head (52) is formed on the insulation shell layer (102).In the second preferred embodiment (200), the disk drive write gap (76) is formed on the insulation shell layer (102) and the top pole (42) of the write head (52) is formed on the write gap (76).The insulation shell layers (102) in both embodiments are preferably made of dielectric materials (103).Methods of fabrication for these embodiments are also disclosed.

摘要翻译： 一种具有写入头（52）的计算机磁盘驱动器（22），包括线圈（38），形成在线圈（38）上的光致抗蚀剂绝缘层（66）和形成在线圈上的绝缘外壳层 光刻胶绝缘层（66）。 在第一优选实施例（100）中，写头（52）的顶极（42）形成在绝缘壳层（102）上。 在第二优选实施例（200）中，磁盘驱动器写入间隙（76）形成在绝缘外壳层（102）上，写入头（52）的顶极（42）形成在写入间隙（76）上， 。 两个实施例中的绝缘壳层（102）优选地由电介质材料（103）制成。 还公开了这些实施例的制造方法。

公开(公告)号：US06906894B2

公开(公告)日：2005-06-14

申请号：US10903977

申请日：2004-07-29

申请人： Yingjian Chen ,  Xiaozhong Dang ,  Francis H. Liu ,  Kroum Stoev ,  Hai Jiang ,  Yugang Wang ,  Xizeng Shi

发明人： Yingjian Chen ,  Xiaozhong Dang ,  Francis H. Liu ,  Kroum Stoev ,  Hai Jiang ,  Yugang Wang ,  Xizeng Shi

IPC分类号： G11B5/127 ,  G11B5/31 ,  G11B5/147

CPC分类号： G11B5/1278 ,  G11B5/3109 ,  Y10T29/49034 ,  Y10T29/49044

摘要： A read/write head and method of making the same are used in a data storage system, such as a disk drive, for perpendicular magnetic recording of data. The head employs a two-layer pole design with a main pole made of sputtered high moment magnetic material, and an adjunct pole made of electroplated soft magnetic film. The main pole is used to write data onto the medium, and is formed over the write coil. The adjunct pole is substantially recessed from the air bearing surface and is formed over the main pole. The present head design significantly enhances the magnetic write field, and substantially reduces side-writing that result in accidental erasure of data in adjacent tracks on the magnetic recording medium.

摘要翻译： 读/写头及其制造方法用于数据存储系统，例如磁盘驱动器，用于数据的垂直磁记录。 头部采用双层极设计，其主极由溅射高磁矩材料制成，电极由电镀软磁膜制成。 主极用于将数据写入介质，并形成在写入线圈上。 辅助杆从空气轴承表面基本上凹入并且形成在主极上。 本头设计显着增强了磁写入场，并且基本上减少了导致磁记录介质上的相邻轨道中的数据的意外擦除的侧写。

公开(公告)号：US06809899B1

公开(公告)日：2004-10-26

申请号：US10751215

申请日：2003-12-31

申请人： Yingjian Chen ,  Yugang Wang ,  Francis Liu ,  Xizeng Shi ,  Kyusik Sin ,  Hugh Craig Hiner

发明人： Yingjian Chen ,  Yugang Wang ,  Francis Liu ,  Xizeng Shi ,  Kyusik Sin ,  Hugh Craig Hiner

IPC分类号： G11B5147

CPC分类号： G11B5/1278 ,  Y10S977/934

摘要： Electromagnetic transducers are disclosed having write poles with a leading edge that is smaller than a trailing edge, which can reduce erroneous writing for perpendicular recording systems. The write poles may have a trapezoidal shape when viewed from a direction of an associated medium. The write poles may be incorporated in heads or sliders that also contain read elements such as magnetoresistive sensors, and may be employed with information storage systems such as disk drives.

摘要翻译： 公开了具有写入极的电磁换能器，其前缘小于后缘，这可以减少用于垂直记录系统的错误写入。 当从相关联的介质的方向观察时，写入极可以具有梯形形状。 写入极可以并入还包含诸如磁阻传感器的读取元件的磁头或滑块中，并且可以用于诸如磁盘驱动器的信息存储系统。

公开(公告)号：US06801408B1

公开(公告)日：2004-10-05

申请号：US09705420

申请日：2000-11-02

申请人： Yingjian Chen ,  Ronald A. Barr ,  Hau-Ching Tong

发明人： Yingjian Chen ,  Ronald A. Barr ,  Hau-Ching Tong

IPC分类号： G11B539

CPC分类号： G11B5/3916

摘要： In at least one embodiment, the apparatus of the invention is a read sensor which includes a shield, a sensor element, a read gap positioned between the shield and the sensor element, and an extra gap positioned between the shield and the sensor element and adjacent the read gap. The sensor element is positioned in a sensor layer. With the sensor element and the shield separated by only the relatively thin gap layer, high sensitivity of the sensor element is obtained. Further, by placing the relatively thick extra gap between the shield and the sensor layer and about the sensor element, the potential for shorting is minimized. The shield can be planarized to keep the read gap and the sensor layer at, and about, the sensor element substantially planar. This, in turn, results in improved control of sensor track widths and greatly reduces the potential for pooling of photoresist. In at least one embodiment, the method of the invention is for fabricating a read sensor and includes depositing a read gap onto a planarized shield, depositing an extra gap adjacent an exposed portion of the read gap, and depositing a sensor element onto the exposed portion of the first gap and adjacent to the extra gap.

摘要翻译： 在至少一个实施例中，本发明的装置是读取传感器，其包括屏蔽件，传感器元件，位于屏蔽件和传感器元件之间的读取间隙，以及位于屏蔽件和传感器元件之间的相邻的间隙 读差距。 传感器元件位于传感器层中。 传感器元件和屏蔽仅由相对薄的间隙层隔开，可以获得传感器元件的高灵敏度。 此外，通过在屏蔽和传感器层之间以及传感器元件周围放置相对较厚的额外间隙，使短路的可能性最小化。 可以将屏蔽层平坦化，以将读取的间隙和传感器层保持在传感器元件的基本平面上并且围绕其传播。 这反过来导致传感器轨道宽度的改进的控制，并且大大降低了光致抗蚀剂的集合的潜力。 在至少一个实施例中，本发明的方法用于制造读取传感器，并且包括将读取间隙沉积在平坦化屏蔽上，在读取间隙的暴露部分附近沉积额外的间隙，以及将传感器元件沉积到暴露部分上 的第一个间隙并且与额外的间隙相邻。

公开(公告)号：US06410170B1

公开(公告)日：2002-06-25

申请号：US09315863

申请日：1999-05-20

申请人： Yingjian Chen ,  Chester Qian

发明人： Yingjian Chen ,  Chester Qian

IPC分类号： G11B566

CPC分类号： G11B5/851 ,  Y10S428/90

摘要： A preferred method of the present invention provides an improved thin film for carrying magnetic flux. With the preferred method, the magnetic thin film may be formed by depositing Fe by reactive sputtering using N2 to form a thin film comprising &agr;-Fe and &ggr;-Fe4N. With this method, the relative percentage of &ggr;-Fe4N in the deposited film is increased to provide expanding lattice constants for both the &agr;-Fe and the &ggr;-Fe4N. Increasing &ggr;-Fe4N increases resistivity while expanding lattice constants to provide improved coercivity at higher resistivity. Increasing the percentage of &ggr;-Fe4N to provide expanding lattice constants for both the &agr;-Fe and the &ggr;-Fe4N may be accomplished by adjusting sputtering power, N2 gas percentage, a flow rate of N2, and substrate bias. In some embodiments, high sputtering power of about 3-4 kW with about 15-30 percent of N2 may be used to sputter FeX, where X is selected from the group consisting of Rh, Ta, Hf, Al, Zr, Ti, Ru, Si, Cr, V, Si, Sr, Nb, Mo, Ru, and Pd, to provide expanding &agr;-Fe and &ggr;-Fe2N lattice constants. In some embodiments, FeXN films having resistivity values greater than about 50 &mgr;&OHgr;cm, 80 &mgr;&OHgr;cm, 100 &mgr;&OHgr;cm, 115 &mgr;&OHgr;cm, or more, for coercivity values less than about 10 Oe, 5 Oe, or 3 Oe are possible, for values of Bs greater than around 12 kG to 17 kG. Embodiments may be used for pole or shield structures in magnetic heads for data storage and retrieval apparatuses to improve high frequency performance.

摘要翻译： 本发明的优选方法提供了用于承载磁通量的改进的薄膜。 利用优选的方法，可以通过使用N 2的反应溅射沉积Fe以形成包含α-Fe和γ-Fe 4 N的薄膜来形成磁性薄膜。 利用该方法，沉积膜中的γ-Fe 4 N的相对百分比增加，以提供α-Fe和γ-Fe4N两者的扩展晶格常数。 增加的γ-Fe4N增加电阻率同时扩大晶格常数以提供更高的电阻率的矫顽力。 通过调整溅射功率，N 2气体百分比，N2的流量和衬底偏压，可以提高γ-Fe 4 N的比例以提供α-Fe和γ-Fe 4 N的扩展晶格常数。 在一些实施例中，可以使用约3-4kW的高溅射功率，约15-30％的N 2溅射FeX，其中X选自Rh，Ta，Hf，Al，Zr，Ti，Ru ，Si，Cr，V，Si，Sr，Nb，Mo，Ru和Pd，以提供扩展的α-Fe和γ-Fe2N晶格常数。 在一些实施方案中，对于低于约10Oe，5Oe或3Oe的矫顽力值，具有大于约50μOMEGAcm，80mΩEGcm，100μOMEGAcm，115μOMEGAcm或更大的电阻率值的FeXN膜是可能的， 大约12 kG到17 kG。 实施例可以用于磁头中的磁极或屏蔽结构，用于数据存储和检索装置，以改善高频性能。