公开(公告)号：US20080199783A1

公开(公告)日：2008-08-21

申请号：US11677142

申请日：2007-02-21

Applicant: Shih-Ming Chang ,  Hung-Chang Hsieh ,  Burn Jeng Lin

Inventor： Shih-Ming Chang ,  Hung-Chang Hsieh ,  Burn Jeng Lin

IPC: G03F1/00

CPC classification number: G03F1/64 ,  G03F1/48 ,  G03F1/62

Abstract: A pellicle-mask assembly includes a mask substrate having an absorber pattern, and a hard pellicle held against movement with respect to the mask substrate by gas pressure.

Abstract translation: 防护薄膜组件包括具有吸收体图案的掩模基板和通过气体压力保持相对于掩模基板移动的硬膜组件。

公开(公告)号：US07091502B2

公开(公告)日：2006-08-15

申请号：US10844178

申请日：2004-05-12

Applicant: Tsai Sheng Gau ,  Chun-Kuang Chen ,  Ru-Gun Liu ,  Burn Jeng Lin

Inventor： Tsai Sheng Gau ,  Chun-Kuang Chen ,  Ru-Gun Liu ,  Burn Jeng Lin

IPC: H01L21/027 ,  G03F7/20

CPC classification number: G03F7/70341

Abstract: An immersion lithography system for semiconductor manufacturing provides a lens assembly that moves relative to a wafer surface and includes a nozzle and drain assembly that is coupled to, and moves along, the lens assembly. The nozzle and drain assemblies may be disposed circumferentially opposite each other about the lens or an annular ring may be provided that surrounds the lens and includes a plurality of selectable alternating nozzles and drains. The nozzle and drain assemblies may rotatably surround the lens. At least a portion of the wafer being patterned is immersed in a liquid provided by the nozzle assembly and a flow direction is controlled by manipulating the nozzle and drain assemblies. Flow direction may be advantageously directed outwardly to reduce particulate contamination.

Abstract translation: 用于半导体制造的浸没式光刻系统提供了相对于晶片表面移动的透镜组件，并且包括联接到透镜组件并沿着透镜组件移动的喷嘴和排出组件。 喷嘴和排出组件可以围绕透镜周向地相对设置，或者可以设置围绕透镜的环形环，并且包括多个可选择的交替喷嘴和排水沟。 喷嘴和排出组件可旋转地围绕透镜。 将被图案化的晶片的至少一部分浸入由喷嘴组件提供的液体中，并且通过操纵喷嘴和排出组件来控制流动方向。 可以有利地向外指向流动方向以减少颗粒污染。

公开(公告)号：US06492073B1

公开(公告)日：2002-12-10

申请号：US09839926

申请日：2001-04-23

Applicant: Burn Jeng Lin ,  Ru-Gun Liu ,  Shih-Ying Chen ,  Shinn-Sheng Yu ,  Hua-Tai Lin ,  Anthony Yen ,  Yao-Ching Ku

Inventor： Burn Jeng Lin ,  Ru-Gun Liu ,  Shih-Ying Chen ,  Shinn-Sheng Yu ,  Hua-Tai Lin ,  Anthony Yen ,  Yao-Ching Ku

IPC: G03F900

CPC classification number: G03F1/36 ,  G03F1/70 ,  G03F7/70433 ,  G03F7/70441

Abstract: A mask set of two masks and a method of using these masks in a double exposure to avoid line shortening due to optical proximity effects is described. A pattern having pattern elements comprising a number of line segments, wherein each of the line segments has one or two free ends which are not connected to other mask pattern elements is to be transferred to a layer of resist. A first mask is formed by adding line extensions to each of the free ends of the line segments. A cutting mask is formed comprising rectangles enclosing each of the line extensions wherein one of the sides of said rectangles is coincident with the corresponding free end of said line segment. The first mask has opaque regions corresponding to the extended line segments. The cutting mask has transparent regions corresponding to the cutting pattern. In another embodiment a pattern having pattern openings comprising a number of line segments. In this embodiment the cutting pattern comprises rectangles having the same width as said line segments and add length to the line segments.

Abstract translation: 描述了两个掩模的掩模组和在双重曝光中使用这些掩模以避免由于光学邻近效应引起的线缩短的方法。 具有包括多个线段的图形元素的图案，其中每个线段具有未连接到其它掩模图案元件的一个或两个自由端将被转移到抗蚀剂层。 通过向线段的每个自由端添加线延伸来形成第一掩模。 形成切割掩模，其包括围绕每个线延伸的矩形，其中所述矩形的一个侧面与所述线段的对应的自由端重合。 第一掩模具有对应于延伸线段的不透明区域。 切割掩模具有对应于切割图案的透明区域。 在另一个实施例中，具有包括多个线段的图案开口的图案。 在该实施例中，切割图案包括具有与所述线段相同宽度的矩形，并且对线段增加长度。

公开(公告)号：US5795685A

公开(公告)日：1998-08-18

申请号：US783631

申请日：1997-01-14

Applicant: Lars W. Liebmann ,  Burn Jeng Lin ,  Mark O. Neisser

Inventor： Lars W. Liebmann ,  Burn Jeng Lin ,  Mark O. Neisser

IPC: G03F1/26 ,  G03F1/72 ,  H01L21/027 ,  G03F9/00

CPC classification number: G03F1/26 ,  G03F1/72

Abstract: A method and apparatus for correcting defects in a phase shift mask to be used in photolithography. More specifically, the method of the invention includes creating a second repair mask which contains phase shifters. Regions surrounding the defects on the first mask are made opaque. The design circuitry located in these defective regions is copied onto the second mask. During a second exposure the design circuitry is placed onto the semiconductor wafer. Therefore, this method and apparatus provides an inexpensive solution to a difficult problem.

Abstract translation: 一种用于校正用于光刻中的相移掩模中的缺陷的方法和装置。 更具体地，本发明的方法包括创建包含移相器的第二修复掩模。 围绕第一掩模上的缺陷的区域变得不透明。 位于这些缺陷区域中的设计电路被复制到第二掩模上。 在第二曝光期间，将设计电路放置在半导体晶片上。 因此，该方法和装置为困难的问题提供了便宜的解决方案。

公开(公告)号：US4054383A

公开(公告)日：1977-10-18

申请号：US654428

申请日：1976-02-02

Applicant: Burn Jeng Lin ,  John Sebastian Mentesana ,  William Godfrey Santy ,  Janusz Stanislaw Wilczynski

Inventor： Burn Jeng Lin ,  John Sebastian Mentesana ,  William Godfrey Santy ,  Janusz Stanislaw Wilczynski

IPC: H01L21/027 ,  G03B27/20 ,  G03F7/20 ,  H01L21/683

CPC classification number: G03F7/70691 ,  G03B27/20 ,  G03F7/2014 ,  G03F7/24

Abstract: A jig for positioning an image mask and image receiving medium which includes a housing having a central bore, first means within the bore for supporting a mask or image receiving medium, a flexible diaphragm, second means for drawing vacuum, and a third means for applying superatmospheric pressure on one side of the diaphragm to deform it towards the first means to ensure proper positioning of the mask and image receiving medium. Also, the process for positioning the mask and image receiving medium is provided.

Abstract translation: 一种用于定位图像掩模和图像接收介质的夹具，其包括具有中心孔的壳体，用于支撑掩模或图像接收介质的孔内的第一装置，柔性膜片，用于抽真空的第二装置，以及用于施加的第三装置 在隔膜的一侧上的超大气压力使其朝向第一装置变形，以确保掩模和图像接收介质的适当定位。 此外，提供了用于定位掩模和图像接收介质的处理。

公开(公告)号：US3965299A

公开(公告)日：1976-06-22

申请号：US575909

申请日：1975-05-09

Applicant: Burn Jeng Lin

Inventor： Burn Jeng Lin

IPC: G02F1/09 ,  G03H1/00 ,  G09F9/30 ,  G09G3/00 ,  G09G3/34 ,  G11C13/04 ,  H04N5/66

CPC classification number: G11C13/043 ,  G02F1/09 ,  G09G3/00

Abstract: A dynamic pattern display and optical data processing system is provided including magnetic bubble devices which may be operated in real-time to produce two and three dimensional patterns such as holograms, kinoform lenses and complex filters. Th display pattern is obtained by directing a linearly polarized light beam through a combination including a one-quarter waveplate, a plurality of two-dimensional magnetic bubble arrays and another one-quarter wave plate, all combined in a stack arrangement. In one embodiment a combination is provided which functions as a phase filter and in another embodiment including more bubble arrays, the combination functions as a phase and intensity filter. The display patterns are multi-phase or multi-tone (gray scale) and multi-phase in character. Each magnetic bubble array in the phase and phase and intensity filter embodiments constitutes a layer which differs in thickness from the other magnetic bubble layers. Each magnetic bubble array is also electronically driven by its own bubble propagating circuit which produces, in most embodiments, a different "local phase" or "local transmissivity" which is a function of whether a bubble or an empty space is propagated to the location. The number of levels of transmitted phase or intensity and phase is an exponential function of the number of magnetic bubble layers, thus n layers provides 2.sup.n steps of transmitted phase or intensity and phase modification and a four layer structure provides a sixteen level phase or phase and intensity display. The electronic portion of the structure may be driven by signals representing mathematical expressions, patterns, manual inputs and the like to generate holograms, kineform lenses, complex filters, three-dimensional television pictures, and other display and optical information processing applications.

Abstract translation: 提供动态图案显示和光学数据处理系统，其包括可以实时操作以产生诸如全息图，kinoform透镜和复杂滤光器两种和三维图案的磁性气泡装置。 通过将线性偏振光束引导通过包括四分之一波片，多个二维磁气泡阵列和另一四分之一波片的组合来获得Th显示图案，其全部以堆叠布置组合。 在一个实施例中，提供了用作相位滤波器的组合，并且在包括更多气泡阵列的另一实施例中，该组合用作相位和强度滤波器。 显示图案是多相或多色（灰度）和多相的特征。 相位和相位和强度滤波器实施例中的每个磁气泡阵列构成厚度与其它磁性气泡层不同的层。 每个磁性气泡阵列也由其自身的气泡传播电路进行电子驱动，在大多数实施例中，其产生不同的“局部相位”或“局部透射率”，这是气泡还是空间传播到该位置的函数。 透射相位或强度和相位的数量是磁性气泡层数量的指数函数，因此n层提供了2n个阶段的透射相位或强度和相位修正，而四层结构提供了十六级的相位或相位， 强度显示。 结构的电子部分可以由表示数学表达式，图案，手动输入等的信号驱动，以产生全息图，运动形状透镜，复合滤波器，三维电视图像以及其他显示和光学信息处理应用。

公开(公告)号：US09001308B2

公开(公告)日：2015-04-07

申请号：US13757477

申请日：2013-02-01

Applicant: Chen-Hua Yu ,  Tien-I Bao ,  Chih Wei Lu ,  Jaw-Jung Shin ,  Shy-Jay Lin ,  Burn Jeng Lin

Inventor： Chen-Hua Yu ,  Tien-I Bao ,  Chih Wei Lu ,  Jaw-Jung Shin ,  Shy-Jay Lin ,  Burn Jeng Lin

IPC: G03F7/20

CPC classification number: G03F7/702 ,  H01J37/00 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2237/0435 ,  H01J2237/31789

Abstract: A pattern generator includes a minor array plate having a mirror, at least one electrode plate disposed over the minor array plate, a lens let disposed over the minor, and at least one insulator layer sandwiched between the mirror array plate and the electrode plate. The electrode plate includes a first conducting layer and a second conducting layer. The lens let has a non-straight sidewall formed in the electrode plate. The pattern generator further includes at least one insulator sandwiched between two electrode plates. The non-straight sidewall can be a U-shaped sidewall or an L-shaped sidewall.

Abstract translation: 图案发生器包括具有反射镜的次阵列板，设置在次阵列板上的至少一个电极板，设置在副镜上的透镜，以及夹在反射镜阵列板和电极板之间的至少一个绝缘体层。 电极板包括第一导电层和第二导电层。 透镜让具有形成在电极板中的非直的侧壁。 图案发生器还包括夹在两个电极板之间的至少一个绝缘体。 非直的侧壁可以是U形侧壁或L形侧壁。

公开(公告)号：US08730473B2

公开(公告)日：2014-05-20

申请号：US12892403

申请日：2010-09-28

Applicant: Ming-Feng Shieh ,  Ya Hui Chang ,  Ru-Gun Liu ,  Tsong-Hua Ou ,  Ken-Hsien Hsieh ,  Burn Jeng Lin

Inventor： Ming-Feng Shieh ,  Ya Hui Chang ,  Ru-Gun Liu ,  Tsong-Hua Ou ,  Ken-Hsien Hsieh ,  Burn Jeng Lin

IPC: G01B11/00 ,  H01L21/76 ,  H01L23/58

CPC classification number: H01L23/544 ,  G03F1/42 ,  G03F9/7076 ,  H01L21/0337 ,  H01L21/0338 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided is an alignment mark having a plurality of sub-resolution elements. The sub-resolution elements each have a dimension that is less than a minimum resolution that can be detected by an alignment signal used in an alignment process. Also provided is a semiconductor wafer having first, second, and third patterns formed thereon. The first and second patterns extend in a first direction, and the third pattern extend in a second direction perpendicular to the first direction. The second pattern is separated from the first pattern by a first distance measured in the second direction. The third pattern is separated from the first pattern by a second distance measured in the first direction. The third pattern is separated from the second pattern by a third distance measured in the first direction. The first distance is approximately equal to the third distance. The second distance is less than twice the first distance.

Abstract translation: 提供具有多个次分辨率元素的对准标记。 子分辨率元素各自具有小于可由对准过程中使用的对准信号检测的最小分辨率的维度。 还提供了其上形成有第一，第二和第三图案的半导体晶片。 第一和第二图案在第一方向上延伸，并且第三图案沿垂直于第一方向的第二方向延伸。 第二图案与第一图案分离在第二方向上测量的第一距离。 第三图案与第一图案分离在第一方向上测量的第二距离。 第三图案与第二图案分离在第一方向上测量的第三距离。 第一距离近似等于第三距离。 第二距离小于第一距离的两倍。

公开(公告)号：US20130293858A1

公开(公告)日：2013-11-07

申请号：US13464325

申请日：2012-05-04

Applicant: Burn Jeng Lin ,  Hoi-Tou Ng ,  Ken-Hsien Hsieh ,  Shou-Yen Chou

Inventor： Burn Jeng Lin ,  Hoi-Tou Ng ,  Ken-Hsien Hsieh ,  Shou-Yen Chou

IPC: G03F1/26 ,  G03F7/20 ,  G03B27/42

CPC classification number: G03F1/28

Abstract: The present disclosure provides a photomask. The photomask includes a substrate. The photomask also includes a plurality of patterns disposed on the substrate. Each pattern is phase shifted from adjacent patterns by different amounts in different directions. The present disclosure also includes a method for performing a lithography process. The method includes forming a patternable layer over a wafer. The method also includes performing an exposure process to the patternable layer. The exposure process is performed at least in part through a phase shifted photomask. The phase shifted photomask contains a plurality of patterns that are each phase shifted from adjacent patterns by different amounts in different directions. The method includes patterning the patternable layer.

Abstract translation: 本公开提供了一种光掩模。 光掩模包括基底。 光掩模还包括设置在基板上的多个图案。 每个图案在不同方向上从相邻图案相移不同的量。 本公开还包括用于执行光刻工艺的方法。 该方法包括在晶片上形成可图案化层。 该方法还包括对可图案层进行曝光处理。 曝光过程至少部分通过相移光掩模进行。 相移的光掩模包含多个图案，每个图案在不同方向上从相邻图案相移不同的量。 该方法包括图案化图案化层。

公开(公告)号：US20120235063A1

公开(公告)日：2012-09-20

申请号：US13051507

申请日：2011-03-18

Applicant: Wen-Chuan Wang ,  Shy-Jay Lin ,  Jaw-Jung Shin ,  Burn Jeng Lin

Inventor： Wen-Chuan Wang ,  Shy-Jay Lin ,  Jaw-Jung Shin ,  Burn Jeng Lin

IPC: G21K5/00

CPC classification number: G03F7/2059 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3007 ,  H01J37/317 ,  H01J37/3177 ,  H01J2237/31761 ,  H01J2237/31774

Abstract: A method for electron-beam writing to a medium includes positioning the medium within an e-beam writing machine so that the medium is supported by a stage and is exposed to an e-beam source. The method also includes writing a pattern to the medium using a plurality of independently-controllable beams of the e-beam source, in which the pattern comprises a plurality of parallel strips. Each of the parallel strips is written using multiple ones of the independently-controllable beams.

Abstract translation: 用于电子束写入介质的方法包括将介质定位在电子束写入机内，使得介质由载物台支撑并暴露于电子束源。 该方法还包括使用电子束源的多个可独立控制的光束将介质写入介质，其中图案包括多个平行条带。 使用多个可独立控制的光束来写入每个平行条带。