公开(公告)号：US08133360B2

公开(公告)日：2012-03-13

申请号：US11961921

申请日：2007-12-20

申请人： Keith A. Miller ,  Daniel C. Lubben

发明人： Keith A. Miller ,  Daniel C. Lubben

IPC分类号： C23C14/00 ,  C23C14/32

CPC分类号： C23C14/35 ,  H01J37/3408 ,  H01J37/3482

摘要： When a magnetron is scanned about the back of a target in a selected complex path having radial components, the erosion profile has a form depending upon the selection of paths. A radial erosion rate profile for a given magnetron is measured. Periodically during scanning, an erosion profile is calculated from the measured erosion rate profile, the time the magnetron spends at different radii, and the target power. The calculated erosion profile may be used to indicate when erosion has become excessive at any location prompting target replacement or to adjust the height of the magnetron above the target for repeated scans. In another aspect of the invention, the magnetron height is dynamically adjusted during a scan to compensate for erosion. The compensation may be based on the calculated erosion profile or on feedback control of the present value of the target voltage for a constant-power target supply.

摘要翻译： 当在选定的具有径向分量的复合路径中围绕目标的背面扫描磁控管时，侵蚀曲线具有取决于路径选择的形式。 测量给定磁控管的径向侵蚀速率曲线。 在扫描期间，从测量的侵蚀速率曲线，磁控管在不同半径处花费的时间和目标功率计算出侵蚀曲线。 计算的侵蚀曲线可用于指示在任何位置的侵蚀已经变得过大，促使目标更换，或者调整靶上方磁控管的高度以重复扫描。 在本发明的另一方面，在扫描期间磁控管高度被动态地调节以补偿侵蚀。 补偿可以基于所计算的侵蚀曲线或对于恒定功率目标电源的目标电压的当前值的反馈控制。

公开(公告)号：US20100065216A1

公开(公告)日：2010-03-18

申请号：US12623324

申请日：2009-11-20

申请人： Jennifer Tiller ,  Allen K. Lau ,  Marc O'Donnell Schweitzer ,  Steven V. Sansoni ,  Keith A. Miller ,  Christopher Boitnott

发明人： Jennifer Tiller ,  Allen K. Lau ,  Marc O'Donnell Schweitzer ,  Steven V. Sansoni ,  Keith A. Miller ,  Christopher Boitnott

IPC分类号： C23F1/08 ,  C23C16/458

CPC分类号： C23C14/564 ,  H01J37/32623 ,  H01J37/32642 ,  H01L21/68735

摘要： An isolator ring is provided for a substrate support used in a substrate processing chamber. The substrate support comprises an annular ledge having a circumferential edge, and an inner perimeter sidewall. The isolator ring comprises an L-shaped dielectric ring comprising a laser textured surface; a horizontal leg capable of resting on the annular ledge of the support, and having a length that extends radially outward and stops short of the circumferential edge of the annular ledge; and a vertical leg abutting the inner perimeter sidewall of the support. A ring assembly includes the isolator ring and a deposition ring.

摘要翻译： 为衬底处理室中使用的衬底支架提供隔离环。 衬底支撑件包括具有圆周边缘和内周边侧壁的环形凸缘。 隔离环包括包括激光纹理表面的L形介电环; 一个能够搁置在支撑件的环形凸缘上的水平支腿，并且具有径向向外延伸的长度并且不止于环形凸缘的圆周边缘的长度; 以及邻接支撑件的内周侧壁的垂直腿。 环组件包括隔离环和沉积环。

公开(公告)号：US20100055298A1

公开(公告)日：2010-03-04

申请号：US12200141

申请日：2008-08-28

申请人： Joseph F. Sommers ,  Keith A. Miller

发明人： Joseph F. Sommers ,  Keith A. Miller

IPC分类号： B05D5/12

CPC分类号： H01J37/32495 ,  C23C14/35 ,  C23C14/564 ,  C23C16/4404 ,  C23C16/4407 ,  H01J37/32477 ,  H01J37/32504 ,  H01J37/3408

摘要： Process kit shields for use in a process chamber and methods of use thereof are provided herein. In some embodiments, the process kit shield may include a body having a wall comprising a first layer and a second layer bonded to the first layer, wherein the first layer comprises a first material resistant to a cleaning chemistry utilized to remove material disposed on the first layer during processing, and wherein the second layer comprises a second material different than the first material and having a coefficient of thermal expansion substantially similar to that of the first material. In some embodiments, the process kit shield may be disposed in a process chamber having a processing volume and a non-processing volume. The process kit shield may be disposed between the processing volume and the non-processing volume

摘要翻译： 在处理室中使用的工艺组件护罩及其使用方法在本文中提供。 在一些实施例中，处理套件屏蔽件可以包括具有壁的主体，该主体包括第一层和结合到第一层的第二层，其中第一层包含耐洗涤化学物质的第一材料，用于去除设置在第一层上的材料 层，并且其中第二层包括与第一材料不同的第二材料，并且具有基本上类似于第一材料的热膨胀系数。 在一些实施例中，处理套件屏蔽可以设置在具有处理量和非处理量的处理室中。 处理套件屏蔽可以设置在处理量和非处理量之间

公开(公告)号：US20090308732A1

公开(公告)日：2009-12-17

申请号：US12482713

申请日：2009-06-11

申请人： Yong Cao ,  Maurice E. Ewert ,  Xianmin Tang ,  Keith A. Miller ,  Daniel C. Lubben ,  Umesh M. Kelkar ,  Tza-Jing Gung ,  Anantha K. Subramani

发明人： Yong Cao ,  Maurice E. Ewert ,  Xianmin Tang ,  Keith A. Miller ,  Daniel C. Lubben ,  Umesh M. Kelkar ,  Tza-Jing Gung ,  Anantha K. Subramani

IPC分类号： C23C14/34

CPC分类号： C23C14/35 ,  C23C14/046 ,  H01J37/34 ,  H01J37/3447

摘要： Embodiments of the present invention generally relate to an apparatus and method for uniform sputter depositing of materials into the bottom and sidewalls of high aspect ratio features on a substrate. In one embodiment, a sputter deposition system includes a collimator that has apertures having aspect ratios that decrease from a central region of the collimator to a peripheral region of the collimator. In one embodiment, the collimator is coupled to a grounded shield via a bracket member that includes a combination of internally and externally threaded fasteners. In another embodiment, the collimator is integrally attached to a grounded shield. In one embodiment, a method of sputter depositing material includes pulsing the bias on the substrate support between high and low values.

摘要翻译： 本发明的实施例一般涉及用于均匀溅射沉积到衬底上的高纵横比特征的底部和侧壁中的装置和方法。 在一个实施例中，溅射沉积系统包括准直器，其具有从准直器的中心区域到准直器的外围区域的纵横比减小的孔。 在一个实施例中，准直器经由包括内螺纹紧固件和外螺纹紧固件的组合的支架构件联接到接地屏蔽件。 在另一个实施例中，准直器一体地附接到接地屏蔽。 在一个实施例中，溅射沉积材料的方法包括在高和低值之间使衬底支撑上的偏压脉动。

公开(公告)号：US20090260982A1

公开(公告)日：2009-10-22

申请号：US12423444

申请日：2009-04-14

申请人： Martin Lee Riker ,  Keith A. Miller ,  Anantha Subramani

发明人： Martin Lee Riker ,  Keith A. Miller ,  Anantha Subramani

IPC分类号： C23C14/34

CPC分类号： C23C16/4585 ,  C23C14/34 ,  C23C14/50 ,  C23C14/564 ,  H01J37/32623 ,  H01J37/32633 ,  H01J37/3408 ,  H01J37/3441

摘要： Embodiments described herein generally relate to components for a semiconductor processing chamber, a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a process kit. In one embodiment a lower shield for encircling a sputtering target and a substrate support is provided. The lower shield comprises a cylindrical outer band having a first diameter dimensioned to encircle the sputtering surface of the sputtering target and the substrate support, the cylindrical band comprising a top wall that surrounds a sputtering surface of a sputtering target and a bottom wall that surrounds the substrate support, a support ledge comprising a resting surface and extending radially outward from the cylindrical outer band, a base plate extending radially inward from the bottom wall of the cylindrical band, and a cylindrical inner band coupled with the base plate and partially surrounding a peripheral edge of the substrate support.

摘要翻译： 本文描述的实施例通常涉及用于半导体处理室的部件，用于半导体处理室的处理套件和具有处理套件的半导体处理室。 在一个实施例中，提供了用于环绕溅射靶的底部屏蔽件和衬底支撑件。 下屏蔽包括具有第一直径的圆柱形外带，其尺寸被设计成围绕溅射靶的溅射表面和衬底支撑件，该圆柱形带包括围绕溅射靶的溅射表面的顶壁和围绕溅射靶的底壁 衬底支撑件，包括搁置表面并从圆柱形外带径向向外延伸的支撑凸缘，从圆柱形带的底壁径向向内延伸的底板，以及与基板耦合并部分围绕外围的圆柱形内带 基板支撑的边缘。

公开(公告)号：US07418186B1

公开(公告)日：2008-08-26

申请号：US11801802

申请日：2007-05-11

申请人： Christopher S. Grubish ,  Keith A. Miller ,  George Dudash ,  John L. Hornsby ,  Mark A. Stransky ,  Randy G. Cloud

发明人： Christopher S. Grubish ,  Keith A. Miller ,  George Dudash ,  John L. Hornsby ,  Mark A. Stransky ,  Randy G. Cloud

IPC分类号： G02B6/00

CPC分类号： G02B6/4477 ,  G02B6/4453 ,  G02B6/4471

摘要： A fiber retention device is provided for retention of fibers such as optical fibers, tubing, cables, buffer tubes and other elongate objects. The retention device includes, generally, a mounting retainer and a resilient sleeve. The mounting retainer is formed of a resilient material and defines one or more generally U-shaped support channels. The resilient sleeve is positioned in the U-shaped support channel and defines at least one expandable passageway for receiving a fiber therein. The passageway diameter is less than the fiber diameter in a pre-load orientation or relaxed condition prior to inserting the fiber into the passageway. The support channel selectively includes a plurality of tabs for locating the sleeve therein including tabs on a bottom wall for resisting relative horizontal movement and tabs on a side wall for resisting relative vertical movement of the sleeve within the channel. The sleeve is positively located by the channel, and the fiber is retained and strain relieved by the elastomer sleeve. A mounting flange is provided for coupling a plurality of mounting retainers in a coupled orientation as desired.

摘要翻译： 提供纤维保持装置用于保持诸如光纤，管道，电缆，缓冲管和其它细长物体之类的纤维。 保持装置通常包括安装保持器和弹性套筒。 安装保持器由弹性材料形成并且限定一个或多个大体上U形的支撑通道。 弹性套筒定位在U形支撑通道中，并且限定了用于在其中容纳纤维的至少一个可扩张通道。 在将纤维插入通道之前，通道直径小于预加载取向或松弛状态下的纤维直径。 支撑通道选择性地包括多个用于将套筒定位在其中的突出部，其中包括用于抵抗相对水平运动的底壁上的突片和侧壁上的突片，以抵抗套管在通道内的相对垂直运动。 套筒由通道确定地定位，并且纤维被弹性体套筒保持和应变释放。 提供了安装法兰，用于根据需要以联接方向联接多个安装保持器。

公开(公告)号：US20080099326A1

公开(公告)日：2008-05-01

申请号：US11778648

申请日：2007-07-17

申请人： MENGQI YE ,  Keith A. Miller ,  Peijun Ding ,  Goichi Yoshidome ,  Rong Tao

发明人： MENGQI YE ,  Keith A. Miller ,  Peijun Ding ,  Goichi Yoshidome ,  Rong Tao

IPC分类号： C23C14/35

CPC分类号： C23C14/0623 ,  C23C14/351 ,  C23C14/541

摘要： A plasma sputtering method for metal chalcogenides, such as germanium antimony telluride (GST), useful in forming phase-change memories. The substrate is held at a selected temperature at which the material deposits in either an amorphous or crystalline form. GST has a low-temperature amorphous range and a high-temperature crystalline range separated by a transition band of 105-120° C. Bipolar pulsed sputtering with less than 50% positive pulses of less than 10:s pulse width cleans the target while maintain the sputtering plasma. The temperature of chamber shields is maintained at a temperature favoring crystalline deposition or they may be coated with arc-spray aluminum or with crystallographically aligned copper or aluminum.

摘要翻译： 用于形成相变存储器的金属硫族化物的等离子体溅射方法，例如锗锑碲化物（GST）。 将基材保持在选定的温度，在该温度下，材料以无定形或结晶形式沉积。 GST具有低温无定形范围和105-120°C的过渡带隔离的高温结晶范围。具有小于10s脉冲宽度的小于50％正脉冲的双极脉冲溅射清洁目标，同时保持 溅射等离子体。 室屏蔽的温度保持在有利于结晶沉积的温度下，或者它们可以用电弧喷涂铝或用结晶取向的铜或铝涂覆。

公开(公告)号：US07130519B2

公开(公告)日：2006-10-31

申请号：US11126740

申请日：2005-05-11

申请人： Christopher S. Grubish ,  Randy G. Cloud ,  Keith A. Miller

发明人： Christopher S. Grubish ,  Randy G. Cloud ,  Keith A. Miller

IPC分类号： G02B6/00

CPC分类号： G02B6/445

摘要： An optical fiber splice case particularly adapted for providing fiber optic links directly to a home, business, et al. is provided wherein at least one enclosure base has at least one cover member selectively sealingly engaged with at least one side of the at least one enclosure base. The at least one enclosure base includes at least one bulkhead having a selective plurality of optical fiber ports therethrough.

摘要翻译： 一种特别适用于将光纤链路直接提供给家庭，商业等的光纤接头盒。 其中至少一个外壳底座具有至少一个盖构件，所述至少一个盖构件选择性地密封地与所述至少一个外壳基座的至少一个侧面接合。 所述至少一个外壳基座包括至少一个具有穿过其中的选择性多个光纤端口的隔板。

公开(公告)号：US4457329A

公开(公告)日：1984-07-03

申请号：US327323

申请日：1981-12-04

申请人： Barry L. Werley ,  Richard H. Snyder ,  Joseph E. McQuillen ,  Keith A. Miller

发明人： Barry L. Werley ,  Richard H. Snyder ,  Joseph E. McQuillen ,  Keith A. Miller

IPC分类号： F16K17/38 ,  F16K13/04

CPC分类号： F16K17/383 ,  G05D16/0663 ,  Y10T137/1804 ,  Y10T137/1819 ,  Y10T137/7826

摘要： A safety pressure regulator employing a diaphragm actuator that upon exposure to high temperature an element melts to release the valve from the actuator to effect its automatic closing.

摘要翻译： 一种使用隔膜致动器的安全压力调节器，当暴露于高温时，元件熔化以将阀从致动器释放以实现其自动关闭。

公开(公告)号：US4175396A

公开(公告)日：1979-11-27

申请号：US907428

申请日：1978-05-19

申请人： Keith A. Miller ,  Eric C. Osmundson

发明人： Keith A. Miller ,  Eric C. Osmundson

IPC分类号： F25D3/11 ,  F25D13/06

CPC分类号： B29B17/02 ,  F25D3/11 ,  B29B2017/0416 ,  B29L2030/00 ,  Y02W30/622 ,  Y02W30/625

摘要： A cryogenic freezer is disclosed for embrittling scrap material, such as random size pieces of automobile tires, prior to fragmentation of the embrittled scrap material in an impact mill. The freezer includes a product discharge gas lock which is designed to minimize the loss of cryogenic refrigerant while, at the same time, accomodating unusually large pieces of scrap material.

摘要翻译： 公开了一种低温冷冻机，用于在冲击式磨机中脆化的废料碎裂之前，使脆化的废料（如随机大小的汽车轮胎）变脆。 冷冻器包括一个产品排放气体锁，其设计用于最大限度地减少低温制冷剂的损失，而同时容纳异常大块的废料。