公开(公告)号：US20090308732A1

公开(公告)日：2009-12-17

申请号：US12482713

申请日：2009-06-11

申请人： Yong Cao ,  Maurice E. Ewert ,  Xianmin Tang ,  Keith A. Miller ,  Daniel C. Lubben ,  Umesh M. Kelkar ,  Tza-Jing Gung ,  Anantha K. Subramani

发明人： Yong Cao ,  Maurice E. Ewert ,  Xianmin Tang ,  Keith A. Miller ,  Daniel C. Lubben ,  Umesh M. Kelkar ,  Tza-Jing Gung ,  Anantha K. Subramani

IPC分类号： C23C14/34

CPC分类号： C23C14/35 ,  C23C14/046 ,  H01J37/34 ,  H01J37/3447

摘要： Embodiments of the present invention generally relate to an apparatus and method for uniform sputter depositing of materials into the bottom and sidewalls of high aspect ratio features on a substrate. In one embodiment, a sputter deposition system includes a collimator that has apertures having aspect ratios that decrease from a central region of the collimator to a peripheral region of the collimator. In one embodiment, the collimator is coupled to a grounded shield via a bracket member that includes a combination of internally and externally threaded fasteners. In another embodiment, the collimator is integrally attached to a grounded shield. In one embodiment, a method of sputter depositing material includes pulsing the bias on the substrate support between high and low values.

摘要翻译： 本发明的实施例一般涉及用于均匀溅射沉积到衬底上的高纵横比特征的底部和侧壁中的装置和方法。 在一个实施例中，溅射沉积系统包括准直器，其具有从准直器的中心区域到准直器的外围区域的纵横比减小的孔。 在一个实施例中，准直器经由包括内螺纹紧固件和外螺纹紧固件的组合的支架构件联接到接地屏蔽件。 在另一个实施例中，准直器一体地附接到接地屏蔽。 在一个实施例中，溅射沉积材料的方法包括在高和低值之间使衬底支撑上的偏压脉动。

公开(公告)号：US20120231633A1

公开(公告)日：2012-09-13

申请号：US13046261

申请日：2011-03-11

申请人： Maurice E. Ewert ,  Anantha K. Subramani ,  Umesh M. Kelkar ,  Chandrasekhar Balasubramanyam ,  Joseph M. Ranish

发明人： Maurice E. Ewert ,  Anantha K. Subramani ,  Umesh M. Kelkar ,  Chandrasekhar Balasubramanyam ,  Joseph M. Ranish

IPC分类号： H01L21/30 ,  H01L21/00

CPC分类号： C23C14/5806 ,  C23C14/34 ,  C23C14/3435 ,  C23C14/541 ,  C23C16/4581 ,  C23C16/481 ,  H01J37/3411 ,  H01J37/3488 ,  H01L21/02104 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/324 ,  H01L21/67115 ,  H01L21/67248 ,  H01L21/68742 ,  H01L21/76882

摘要： Disclosed are method and apparatus for treating a substrate. The apparatus is a dual-function process chamber that may perform both a material process and a thermal process on a substrate. The chamber has an annular radiant source disposed between a processing location and a transportation location of the chamber. Lift pins have length sufficient to maintain the substrate at the processing location while the substrate support is lowered below the radiant source plane to afford radiant heating of the substrate. A method of processing a substrate having apertures formed in a first surface thereof includes depositing material on the first surface in the apertures and reflowing the material by heating a second surface of the substrate opposite the first surface. A second material can then be deposited, filling the apertures partly or completely. Alternately, a cyclical deposition/reflow process may be performed.

摘要翻译： 公开了用于处理基材的方法和装置。 该装置是双功能处理室，其可以在基板上进行材料处理和热处理。 该室具有设置在处理位置和室的输送位置之间的环形辐射源。 提升销具有足够的长度以将衬底保持在处理位置，同时衬底支撑件降低到辐射源平面下方以提供衬底的辐射加热。 一种处理在其第一表面中形成的孔的衬底的方法包括在孔的第一表面上沉积材料并通过加热衬底的与第一表面相对的第二表面来回流材料。 然后可以沉积第二种材料，部分地或完全地填充孔。 或者，可以执行循环沉积/回流工艺。

公开(公告)号：US08404048B2

公开(公告)日：2013-03-26

申请号：US13046261

申请日：2011-03-11

申请人： Maurice E. Ewert ,  Anantha K. Subramani ,  Umesh M. Kelkar ,  Chandrasekhar Balasubramanyam ,  Joseph M. Ranish

发明人： Maurice E. Ewert ,  Anantha K. Subramani ,  Umesh M. Kelkar ,  Chandrasekhar Balasubramanyam ,  Joseph M. Ranish

IPC分类号： C23C16/46 ,  C23C16/00 ,  H01L21/306

CPC分类号： C23C14/5806 ,  C23C14/34 ,  C23C14/3435 ,  C23C14/541 ,  C23C16/4581 ,  C23C16/481 ,  H01J37/3411 ,  H01J37/3488 ,  H01L21/02104 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/324 ,  H01L21/67115 ,  H01L21/67248 ,  H01L21/68742 ,  H01L21/76882

摘要： Disclosed are method and apparatus for treating a substrate. The apparatus is a dual-function process chamber that may perform both a material process and a thermal process on a substrate. The chamber has an annular radiant source disposed between a processing location and a transportation location of the chamber. Lift pins have length sufficient to maintain the substrate at the processing location while the substrate support is lowered below the radiant source plane to afford radiant heating of the substrate. A method of processing a substrate having apertures formed in a first surface thereof includes depositing material on the first surface in the apertures and reflowing the material by heating a second surface of the substrate opposite the first surface. A second material can then be deposited, filling the apertures partly or completely. Alternately, a cyclical deposition/reflow process may be performed.

摘要翻译： 公开了用于处理基材的方法和装置。 该装置是双功能处理室，其可以在基板上进行材料处理和热处理。 该室具有设置在处理位置和室的输送位置之间的环形辐射源。 提升销具有足够的长度以将衬底保持在处理位置，同时衬底支撑件降低到辐射源平面下方以提供衬底的辐射加热。 一种处理在其第一表面中形成的孔的衬底的方法包括在孔的第一表面上沉积材料并通过加热衬底的与第一表面相对的第二表面来回流材料。 然后可以沉积第二种材料，部分地或完全地填充孔。 或者，可以执行循环沉积/回流工艺。

公开(公告)号：US20160068958A1

公开(公告)日：2016-03-10

申请号：US14785009

申请日：2014-04-10

申请人： Umesh M KELKAR ,  Kallol BERA ,  Karthik RAMANATHAN ,  Garry K KWONG ,  Joseph YUDOVSKY ,  Applied Materials, Inc.

发明人： Umesh M. Kelkar ,  Kallol Bera ,  Karthik Ramanathan ,  Garry K Kwong ,  Joseph Yudovsky

IPC分类号： C23C16/46 ,  C23C16/458 ,  C23C16/455

CPC分类号： C23C16/46 ,  C23C16/45544 ,  C23C16/4584 ,  C23C16/481 ,  C23C16/52 ,  H01L21/67115

摘要： Apparatus and methods for processing a plurality of semiconductor wafers on a susceptor assembly so that the temperature across the susceptor assembly is uniform are described. A plurality of linear lamps are positioned and controlled in zones to provide uniform heating.

摘要翻译： 描述了在基座组件上处理多个半导体晶片的装置和方法，使得基座组件上的温度是均匀的。 多个线性灯被定位和控制在区域中以提供均匀的加热。

公开(公告)号：US09520267B2

公开(公告)日：2016-12-13

申请号：US14467806

申请日：2014-08-25

申请人： Ludovic Godet ,  Jun Xue ,  Prashanth Kothnur ,  Umesh M. Kelkar ,  Matthew D. Scotney-Castle

发明人： Ludovic Godet ,  Jun Xue ,  Prashanth Kothnur ,  Umesh M. Kelkar ,  Matthew D. Scotney-Castle

IPC分类号： H01J37/317 ,  H01L21/3065 ,  H01J37/32

CPC分类号： H01J37/3172 ,  H01J37/32422 ,  H01J37/32623 ,  H01J37/32706 ,  H01L21/3065

摘要： The angular ion distribution in plasma processing is controlled using a bias voltage frequency. In one example, a plasma containing gas ions is generated in a plasma chamber. The plasma sheath is modified using an aperture disposed between the plasma sheath and the workpiece so that the plasma sheath takes a shape above the aperture. An oscillating radio frequency bias voltage is generated and applied to a workpiece holder. The workpiece holder applies the bias voltage to the workpiece to generate a workpiece bias voltage with respect to the plasma to attract ions across the plasma sheath toward the workpiece. The aperture and the frequency of the bias voltage control an angle at which the ions are attracted toward the workpiece.

摘要翻译： 使用偏置电压频率来控制等离子体处理中的角度离子分布。 在一个实例中，在等离子体室中产生含有气体离子的等离子体。 使用设置在等离子体护套和工件之间的孔来改变等离子体护套，使得等离子体护套在孔的上方具有形状。 产生振荡射频偏置电压并将其施加到工件保持器。 工件保持器将偏置电压施加到工件以产生相对于等离子体的工件偏置电压，以将等离子体护套上的离子吸引到工件。 偏压的孔径和频率控制离子被吸引到工件的角度。

公开(公告)号：US20150371827A1

公开(公告)日：2015-12-24

申请号：US14467806

申请日：2014-08-25

申请人： Ludovic Godet ,  Jun Xue ,  Prashanth Kothnur ,  Umesh M. Kelkar ,  Matthew D. Scotney-Castle

发明人： Ludovic Godet ,  Jun Xue ,  Prashanth Kothnur ,  Umesh M. Kelkar ,  Matthew D. Scotney-Castle

IPC分类号： H01J37/32 ,  H01J37/317

CPC分类号： H01J37/3172 ,  H01J37/32422 ,  H01J37/32623 ,  H01J37/32706 ,  H01L21/3065

摘要： The angular ion distribution in plasma processing is controlled using a bias voltage frequency. In one example, a plasma containing gas ions is generated in a plasma chamber. The plasma sheath is modified using an aperture disposed between the plasma sheath and the workpiece so that the plasma sheath takes a shape above the aperture. An oscillating radio frequency bias voltage is generated and applied to a workpiece holder. The workpiece holder applies the bias voltage to the workpiece to generate a workpiece bias voltage with respect to the plasma to attract ions across the plasma sheath toward the workpiece. The aperture and the frequency of the bias voltage control an angle at which the ions are attracted toward the workpiece.

摘要翻译： 使用偏置电压频率来控制等离子体处理中的角度离子分布。 在一个实例中，在等离子体室中产生含有气体离子的等离子体。 使用设置在等离子体护套和工件之间的孔来改变等离子体护套，使得等离子体护套在孔的上方具有形状。 产生振荡射频偏置电压并将其施加到工件保持器。 工件保持器将偏置电压施加到工件以产生相对于等离子体的工件偏置电压，以将等离子体护套上的离子吸引到工件。 偏压的孔径和频率控制离子被吸引到工件的角度。