公开(公告)号：US08199303B2

公开(公告)日：2012-06-12

申请号：US12274775

申请日：2008-11-20

申请人： Liu-Chung Lee ,  Hsiang-Lin Lin ,  Kuo-Yu Huang

发明人： Liu-Chung Lee ,  Hsiang-Lin Lin ,  Kuo-Yu Huang

IPC分类号： G02F1/1343 ,  G02F1/136 ,  G02F1/13

CPC分类号： G02F1/13458 ,  G02F1/136227 ,  G02F2001/136218 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1288

摘要： A liquid crystal display unit structure and the manufacturing method thereof are provided. The method comprises the following steps: forming a patterned first metal layer with a first data line segment and a lower gate pad on a substrate; forming a patterned dielectric layer covering the first data line and the lower gate pad having a plurality of first openings and a second opening therein, forming a patterned second metal layer including a common line, a second data line segment and a upper gate pad, wherein the upper gate pad is electrically connected to the lower gate pad through the first openings, and the second data line segment is electrically connected to the first data line segment through the first openings; finally forming a patterned passivation layer and a patterned transparent conductive layer.

摘要翻译： 提供了一种液晶显示单元结构及其制造方法。 该方法包括以下步骤：在衬底上形成具有第一数据线段和下栅极焊盘的图案化第一金属层; 形成覆盖所述第一数据线的图案化电介质层和所述下栅极焊盘，其中具有多个第一开口和第二开口，形成包括公共线，第二数据线段和上栅极焊盘的图案化第二金属层，其中 所述上栅极焊盘通过所述第一开口电连接到所述下栅极焊盘，并且所述第二数据线段通过所述第一开口电连接到所述第一数据线段; 最后形成图案化的钝化层和图案化的透明导电层。

公开(公告)号：US08199287B2

公开(公告)日：2012-06-12

申请号：US12499801

申请日：2009-07-09

申请人： Shih-Chia Hsu ,  Hsiang-Lin Lin ,  Ching-Huan Lin

发明人： Shih-Chia Hsu ,  Hsiang-Lin Lin ,  Ching-Huan Lin

IPC分类号： G02F1/1335

CPC分类号： G02F1/133555 ,  G02F1/1368 ,  H01L27/1248

摘要： A pixel structure of a transflective liquid crystal display panel. The pixel structure has single cell gap design, but a coupling capacitor and a modulating capacitor are properly connected to the reflection electrode so as to modulate the voltage of the reflection electrode. Consequently, the transmission region and reflection region of the pixel structure have substantially consistent gamma curves.

摘要翻译： 半透射型液晶显示面板的像素结构。 像素结构具有单电池间隙设计，但是耦合电容器和调制电容器适当地连接到反射电极，以便调制反射电极的电压。 因此，像素结构的透射区域和反射区域具有基本一致的伽马曲线。

公开(公告)号：US08059236B2

公开(公告)日：2011-11-15

申请号：US11707577

申请日：2007-02-15

申请人： Hsiang-Lin Lin ,  Chun-Chieh Tsao

发明人： Hsiang-Lin Lin ,  Chun-Chieh Tsao

IPC分类号： G02F1/1335 ,  G02F1/1333

CPC分类号： G03F7/40 ,  G02F1/133504 ,  G02F1/133555 ,  G02F2201/123 ,  G03F7/0007 ,  H01R13/6675 ,  H02J7/0068 ,  Y10T307/625 ,  Y10T428/1068

摘要： A method for producing a light reflecting structure in a transflective or reflective liquid crystal display uses one or two masks for masking a photoresist layer in a back-side exposing process. The pattern on the masks is designed to produce rod-like structures or crevices and holes on exposed and developed photoresist layer. After the exposed photoresist is developed, a heat treatment process or a UV curing process is used to soften the photoresist layer so that the reshaped surface is more or less contiguous but uneven. A reflective coating is then deposited on the uneven surface. One or more intermediate layers can be made between the masks, between the lower mask and the substrate, and between the upper masks and the photoresist layers. The masks and the intermediate layers can be made in conjunction with the fabrication of the liquid crystal display panel.

摘要翻译： 在半反射或反射型液晶显示器中制造光反射结构的方法使用一个或两个掩模来掩模背面曝光工艺中的光致抗蚀剂层。 掩模上的图案被设计成在曝光和显影的光致抗蚀剂层上产生棒状结构或缝隙和孔。 曝光的光致抗蚀剂显影后，使用热处理工艺或UV固化工艺来软化光致抗蚀剂层，使得整形表面或多或少地连续但不均匀。 然后将反射涂层沉积在不平坦表面上。 可以在掩模之间，下掩模和基板之间以及上掩模和光致抗蚀剂层之间形成一个或多个中间层。 掩模和中间层可以与液晶显示面板的制造相结合。

公开(公告)号：US08048698B2

公开(公告)日：2011-11-01

申请号：US12436221

申请日：2009-05-06

申请人： Hsiang-Lin Lin

发明人： Hsiang-Lin Lin

IPC分类号： H01L21/00

CPC分类号： H01L27/124 ,  H01L27/1248 ,  H01L27/1288

摘要： A thin film transistor array structure and a method for manufacturing the same are provided. The thin film transistor array structure comprises a substrate, including a transition area and a pad area. A patterned first metal layer is formed on the substrate, wherein the patterned first metal layer includes a data connecting line disposed in the transition area, and a data pad and a gate pad disposed in the pad area. A patterned first insulation layer is formed on the patterned first metal layer. The patterned first insulation layer at least defines a first opening on the gate pad, a second opening on the data pad, and a third opening in the transition area, so as to simplify following processes to increase the yield.

摘要翻译： 提供薄膜晶体管阵列结构及其制造方法。 薄膜晶体管阵列结构包括基板，其包括过渡区域和焊盘区域。 图案化的第一金属层形成在基板上，其中图案化的第一金属层包括设置在过渡区域中的数据连接线，以及设置在焊盘区域中的数据焊盘和栅极焊盘。 图案化的第一绝缘层形成在图案化的第一金属层上。 图案化的第一绝缘层至少限定了栅极焊盘上的第一开口，数据焊盘上的第二开口和过渡区域中的第三开口，以便简化后续处理以提高产量。

公开(公告)号：US20110165725A1

公开(公告)日：2011-07-07

申请号：US13047610

申请日：2011-03-14

申请人： Hsiang-Lin Lin ,  Liu-Chung Lee ,  Kuo-Yu Huang

发明人： Hsiang-Lin Lin ,  Liu-Chung Lee ,  Kuo-Yu Huang

IPC分类号： H01L33/08

CPC分类号： G02F1/136213 ,  G02F2001/136218

摘要： A pixel structure is disclosed. The pixel structure includes a substrate, a first data line having at least one end formed on the substrate, a first insulation layer overlying the first data line and exposing a part of the end of the first data line, a shielding electrode disposed on the first insulation layer and overlapped with the first data line, a second data line formed on the first insulation layer and electrically connected to the exposed end of the first data line, a second insulation layer overlying the shielding electrode and the second data line, and a pixel electrode formed on the second insulation layer and overlapped with the shielding electrode. The invention also provides a method for fabricating the pixel structure.

摘要翻译： 公开了像素结构。 像素结构包括基板，具有至少一个端部形成在基板上的第一数据线，覆盖第一数据线并暴露第一数据线的端部的一部分的第一绝缘层，设置在第一数据线上的屏蔽电极 绝缘层并且与第一数据线重叠，形成在第一绝缘层上并电连接到第一数据线的暴露端的第二数据线，覆盖屏蔽电极和第二数据线的第二绝缘层，以及像素 电极，形成在第二绝缘层上并与屏蔽电极重叠。 本发明还提供了一种用于制造像素结构的方法。

公开(公告)号：US07928450B2

公开(公告)日：2011-04-19

申请号：US11692248

申请日：2007-03-28

申请人： Hsiang-Lin Lin ,  Liu-Chung Lee ,  Kuo-Yu Huang

发明人： Hsiang-Lin Lin ,  Liu-Chung Lee ,  Kuo-Yu Huang

IPC分类号： H01L29/72

CPC分类号： G02F1/136213 ,  G02F2001/136218

摘要： A pixel structure is disclosed. The pixel structure includes a substrate, a first data line having at least one end formed on the substrate, a first insulation layer overlying the first data line and exposing a part of the end of the first data line, a shielding electrode disposed on the first insulation layer and overlapped with the first data line, a second data line formed on the first insulation layer and electrically connected to the exposed end of the first data line, a second insulation layer overlying the shielding electrode and the second data line, and a pixel electrode formed on the second insulation layer and overlapped with the shielding electrode. The invention also provides a method for fabricating the pixel structure.

摘要翻译： 公开了像素结构。 像素结构包括基板，具有至少一个端部形成在基板上的第一数据线，覆盖第一数据线并暴露第一数据线的端部的一部分的第一绝缘层，设置在第一数据线上的屏蔽电极 绝缘层并与第一数据线重叠，形成在第一绝缘层上并电连接到第一数据线的暴露端的第二数据线，覆盖屏蔽电极和第二数据线的第二绝缘层，以及像素 电极，形成在第二绝缘层上并与屏蔽电极重叠。 本发明还提供了一种用于制造像素结构的方法。

公开(公告)号：US07872262B2

公开(公告)日：2011-01-18

申请号：US12700678

申请日：2010-02-04

申请人： Hsiang-Lin Lin ,  Sung-Kao Liu

发明人： Hsiang-Lin Lin ,  Sung-Kao Liu

IPC分类号： H01L29/04 ,  H01L29/10 ,  H01L31/00

CPC分类号： G02F1/136227 ,  G02F1/136213 ,  G02F2001/13606 ,  G02F2001/136218

摘要： A method of manufacturing a pixel structure is provided. A first patterned conductive layer including a gate and a data line is formed on a substrate. A gate insulating layer is formed to cover the first patterned conductive layer and a semiconductor channel layer is formed on the gate insulating layer above the gate. A second patterned conductive layer including a scan line, a common line, a source and a drain is formed on the gate insulating layer and the semiconductor channel layer. The scan line is connected to the gate and the common line is located above the data line. The source and drain are located on the semiconductor channel layer, and the source is connected to the data line. A passivation layer is formed on the substrate to cover the second patterned conductive layer. A pixel electrode connected to the drain is formed on the passivation layer.

公开(公告)号：US20100315569A1

公开(公告)日：2010-12-16

申请号：US12483390

申请日：2009-06-12

申请人： Hsiang-Lin Lin ,  Ching-Huan Lin ,  Chih-Hung Shih ,  Wei-Ming Huang

发明人： Hsiang-Lin Lin ,  Ching-Huan Lin ,  Chih-Hung Shih ,  Wei-Ming Huang

IPC分类号： G02F1/1368 ,  H01L21/28

CPC分类号： G02F1/136213 ,  G02F1/136209 ,  G02F1/136286 ,  G02F2001/13606 ,  G02F2201/40 ,  H01L27/124 ,  H01L27/1255

摘要： This invention in one aspect relates to a pixel structure. In one embodiment, the pixel structure includes a scan line formed on a substrate and a data line formed over the substrate defining a pixel area, a switch formed inside the pixel area on the substrate, a shielding electrode having a first portion and a second portion extending from the first portion, and formed over the scan line, the data line and the switch, where the first portion is overlapped with the switch and the second portion is overlapped with the data line, and a pixel electrode having a first portion and a second portion extending from the first portion, and formed over the shielding electrode in the pixel area, where the first portion is overlapped with the first portion of the shielding electrode so as to define a storage capacitor therebetween and the second portion has no overlapping with the second portion of the shielding electrode.

摘要翻译： 本发明在一个方面涉及像素结构。 在一个实施例中，像素结构包括形成在衬底上的扫描线和形成在衬底上的限定像素区域的数据线，形成在衬底上的像素区域内的开关，具有第一部分和第二部分的屏蔽电极 从第一部分延伸并且在扫描线上形成数据线和开关，其中第一部分与开关重叠，并且第二部分与数据线重叠，并且具有第一部分和第二部分的像素电极 第二部分从第一部分延伸并且形成在像素区域中的屏蔽电极之上，其中第一部分与屏蔽电极的第一部分重叠，以便在其间限定存储电容器，并且第二部分与第二部分不重叠 屏蔽电极的第二部分。

公开(公告)号：US20100301345A1

公开(公告)日：2010-12-02

申请号：US12623497

申请日：2009-11-23

申请人： Hsiang-Lin Lin ,  Ching-Huan Lin ,  Chih-Hung Shih ,  Wei-Ming Huang

发明人： Hsiang-Lin Lin ,  Ching-Huan Lin ,  Chih-Hung Shih ,  Wei-Ming Huang

IPC分类号： H01L27/06 ,  H01L21/8234

CPC分类号： H01L27/124

摘要： An array substrate and method for manufacturing the same is provided, wherein a data line is composed of first and second segments connected by a contact pad. First and second insulation layers are disposed between the first segment of the data line and a shielding electrode. In addition, the first insulation layer is disposed between the second segment of the data line and a gate line in their overlapping area. Accordingly, the coupling effect between the conductive layers can be reduced. For example, the RC delay problem due to parasitic capacitance between the shielding electrode and the data line is solved. As a result of the design of the two insulator layers between the first segment of the data line and the shielding electrode, the shorting between the conductive layers can also be simultaneously solved and the product yield can be increased.

摘要翻译： 提供阵列基板及其制造方法，其中数据线由通过接触焊盘连接的第一和第二部分组成。 第一和第二绝缘层设置在数据线的第一段和屏蔽电极之间。 此外，第一绝缘层设置在数据线的第二段和其重叠区域中的栅极线之间。 因此，可以降低导电层之间的耦合效应。 例如，解决了由于屏蔽电极和数据线之间的寄生电容引起的RC延迟问题。 作为数据线的第一段与屏蔽电极之间的两个绝缘体层的设计的结果，导电层之间的短路也可以同时解决，并且可以提高产品的产率。

公开(公告)号：US07842954B2

公开(公告)日：2010-11-30

申请号：US12775493

申请日：2010-05-07

申请人： Wei-Sheng Yu ,  Kuo-Lung Fang ,  Hsiang-Lin Lin ,  Hsien-Chieh Tseng ,  Han-Tu Lin

发明人： Wei-Sheng Yu ,  Kuo-Lung Fang ,  Hsiang-Lin Lin ,  Hsien-Chieh Tseng ,  Han-Tu Lin

IPC分类号： H01L33/00

CPC分类号： H01L27/124 ,  H01L27/1248 ,  H01L27/1288

摘要： An active matrix array structure, disposed on a substrate, includes a first patterned conductive layer, a patterned gate insulating layer, a patterned semiconductor layer, a second patterned conductive layer, a patterned overcoat layer and a transparent conductive layer. The patterned gate insulating layer has first openings that expose a part of the first patterned conductive layer. The patterned semiconductor layer is disposed on the patterned gate insulating layer. The second patterned conductive layer is disposed on the patterned semiconductor layer. The patterned overcoat layer has second openings that expose a part of the first patterned conductive layer and a part of the second patterned conductive layer. The transparent conductive layer is completely disposed on the substrate. The transparent conductive layer disposed in the first openings and the second openings is broken off at a position that is in between the substrate and the patterned overcoat layer.

摘要翻译： 设置在基板上的有源矩阵阵列结构包括第一图案化导电层，图案化栅极绝缘层，图案化半导体层，第二图案化导电层，图案化外涂层和透明导电层。 图案化栅极绝缘层具有暴露第一图案化导电层的一部分的第一开口。 图案化的半导体层设置在图案化的栅极绝缘层上。 第二图案化导电层设置在图案化的半导体层上。 图案化的外涂层具有暴露第一图案化导电层的一部分和第二图案化导电层的一部分的第二开口。 透明导电层完全设置在基板上。 设置在第一开口和第二开口中的透明导电层在基板和图案化外涂层之间的位置处断开。