公开(公告)号：US20060006462A1

公开(公告)日：2006-01-12

申请号：US11122635

申请日：2005-05-05

Applicant: Chi-Hsuen Chang ,  Jun Liu ,  Tsung-Yi Huang ,  Chung-I Chen ,  Tzu-Chiang Sung ,  Chih Huang ,  Rann Yeh

Inventor： Chi-Hsuen Chang ,  Jun Liu ,  Tsung-Yi Huang ,  Chung-I Chen ,  Tzu-Chiang Sung ,  Chih Huang ,  Rann Yeh

IPC: H01L29/76

CPC classification number: H01L21/76229 ,  H01L21/76232 ,  H01L21/82385 ,  H01L21/823857 ,  H01L29/0653 ,  H01L29/42368 ,  H01L29/66681 ,  H01L29/7391 ,  H01L29/7816

Abstract: Method and apparatus for a semiconductor device including high voltage MOS transistors is described. A substrate is provided with a low voltage and a high voltage region separated one from the other. Isolation regions containing an insulator are formed including at least one formed within one of said wells within the high voltage region. The angle of the transition from the active areas to the isolation regions in the high voltage device region is greater than a predetermined angle, in some embodiments it is greater than 40 degrees from vertical. In some embodiments the isolation regions are formed using shallow trench isolation techniques. In alternative embodiments the isolation regions are formed using field oxide formed by local oxidation of silicon techniques.

Abstract translation: 描述了包括高压MOS晶体管的半导体器件的方法和装置。 衬底设置有彼此分离的低电压和高电压区域。 形成包含绝缘体的隔离区，包括形成在高电压区域内的所述阱内的至少一个。 从高电压装置区域中的有源区域到隔离区域的转变角度大于预定角度，在一些实施例中，它与垂直方向大于40度。 在一些实施例中，使用浅沟槽隔离技术形成隔离区域。 在替代实施例中，使用通过硅技术的局部氧化形成的场氧化物形成隔离区。

公开(公告)号：US10745080B1

公开(公告)日：2020-08-18

申请号：US16677135

申请日：2019-11-07

Applicant: Chung-I Chen

Inventor： Chung-I Chen

IPC: B62M3/08

Abstract: A single-face clipless pedal structure includes a pedal body for a cleat to be disposed thereon. The axle portion of the pedal body is formed with a recessed stepped portion at the front end thereof The stepped portion is enclosed by a bottom wall and a lateral wall including a stopping face, a first and a second guiding faces at two ends of the stopping face. The first and the second guiding faces are arc concave-shaped. The cleat is formed with an abutting piece downward having an abutting face, a third and a fourth guiding faces at two ends of the abutting face. The abutting face abuts against the stopping face to prohibit the cleat from moving rearward and upward. The third and the fourth guiding faces correspond to the first and the second guiding faces respectively to facilitate the cleat to detach laterally.

公开(公告)号：US10272969B1

公开(公告)日：2019-04-30

申请号：US15894135

申请日：2018-02-12

Applicant: Chung-I Chen

Inventor： Chung-I Chen

IPC: B62M3/08 ,  F16B17/00 ,  F16B2/02 ,  F16B7/04 ,  F16B9/02

Abstract: An adjusted pedal is provided, including: a pedal body, having two clamp portions respectively configured to engage with a shoe; a pedal shaft, defining an axial direction; an engaging portion, disposed on the pedal body and movably engaged with the pedal shaft so that the pedal body is slidable positionly to the pedal shaft along the axial direction; wherein when the engaging portion is disengaged with the pedal shaft, the pedal body is slidable to the pedal shaft along the axial direction.

公开(公告)号：USD739313S1

公开(公告)日：2015-09-22

申请号：US29500463

申请日：2014-08-25

Applicant: Chung-I Chen

Designer： Chung-I Chen

公开(公告)号：US20110088508A1

公开(公告)日：2011-04-21

申请号：US12582705

申请日：2009-10-20

Applicant: Chung-I Chen

Inventor： Chung-I Chen

IPC: B62M3/08

CPC classification number: B62M3/08 ,  B62M3/086 ,  Y10T74/2168 ,  Y10T74/217

Abstract: A multipurpose pedal includes a spindle assembly and a pedal pivotally assembled with the spindle assembly. The spindle assembly includes a spindle adapting to assemble with a bicycle crank and a tube sleeved on the spindle. The pedal includes a first frame and a second frame mounted in the first frame. Multiple stubs are mounted between the first frame and the second frame. The multiple stubs are replaceable for providing multipurpose.

Abstract translation: 多功能踏板包括主轴组件和与主轴组件枢转组装的踏板。 主轴组件包括主轴，其适于与自行车曲柄组装，套筒套在主轴上。 踏板包括安装在第一框架中的第一框架和第二框架。 在第一框架和第二框架之间安装多个短柱。 多个存根可替换为提供多用途。

公开(公告)号：US20100098484A1

公开(公告)日：2010-04-22

申请号：US12254005

申请日：2008-10-19

Applicant: Chung-I Chen

Inventor： Chung-I Chen

IPC: F16B1/00

CPC classification number: B62M3/08 ,  Y10T403/59 ,  Y10T403/7092

Abstract: A quick release device for a pedal includes a spindle, a connecting unit connected to the spindle, and a quick release mechanism connected to the connecting unit. The spindle has a protrusion extending from one end thereof and an annular groove defined in an outer peripheral thereof. The connecting unit has a receiving hole defined therein, a guiding hole defined in a lateral thereof and communicated with the receiving hole, and a retaining hole defined therein and communicated with the receiving hole. The quick release mechanism includes a rod partially received in the guiding hole and a spring biased against the rod toward the receiving hole. In assembly the protrusion engages with the retaining hole and the rod engages with the annular groove.

Abstract translation: 用于踏板的快速释放装置包括主轴，连接到主轴的连接单元以及连接到连接单元的快速释放机构。 主轴具有从其一端延伸的突起和在其外周限定的环形槽。 连接单元具有限定在其中的接收孔，在其侧面限定并与接收孔连通的引导孔和限定在其中并与接收孔连通的保持孔。 快速释放机构包括部分地容纳在引导孔中的杆和朝向接收孔偏压的弹簧。 在组装时，突起与保持孔接合，杆与环形槽接合。

公开(公告)号：USD606458S1

公开(公告)日：2009-12-22

申请号：US29330469

申请日：2009-01-08

Applicant: Chung-I Chen

Designer： Chung-I Chen

公开(公告)号：US07509889B2

公开(公告)日：2009-03-31

申请号：US11605768

申请日：2006-11-29

Applicant: Chung-I Chen

Inventor： Chung-I Chen

IPC: B62M3/00

CPC classification number: B62M3/086 ,  Y10T74/2164 ,  Y10T74/2168 ,  Y10T74/217

Abstract: A bicycle pedal assembly includes a pedal body having a sleeve tube and front and rear protruding portions. A front clamping member is mounted rotatably on the front protruding portion, and is biased by a front biasing member to rotate toward the sleeve tube. A locking member is connected to the front protruding portion, and is operable to abut against the front clamping member so as to lock the latter against rotational movement. A rear clamping member is mounted rotatably on the rear protruding portion, and is biased by a rear biasing member to rotate toward the sleeve tube. An adjusting member is connected to the rear clamping member, and is operable to adjust the biasing force of the rear biasing member.

Abstract translation: 自行车踏板组件包括具有套筒管和前后突出部的踏板本体。 前夹紧构件可旋转地安装在前突出部分上，并被前偏压构件偏压以朝向套筒管旋转。 锁定构件连接到前突出部分，并且可操作以抵靠前夹紧构件，以将其锁定在旋转运动上。 后夹紧构件可旋转地安装在后突出部分上，并被后偏置构件偏压以朝向套筒管旋转。 调节构件连接到后夹紧构件，并且可操作以调节后偏置构件的偏置力。

公开(公告)号：US07498653B2

公开(公告)日：2009-03-03

申请号：US11273228

申请日：2005-11-12

Applicant: Chia-Wei Liu ,  Jun Xiu Liu ,  Chi-Hsuen Chang ,  Tzu-Chiang Sung ,  Chung-I Chen ,  Rann-Shyan Yeh

Inventor： Chia-Wei Liu ,  Jun Xiu Liu ,  Chi-Hsuen Chang ,  Tzu-Chiang Sung ,  Chung-I Chen ,  Rann-Shyan Yeh

IPC: H01L29/00

CPC classification number: H01L21/761 ,  H01L21/823481 ,  H01L27/088

Abstract: A semiconductor structure for isolating a first circuit and a second circuit of various operating voltages includes a first isolation ring surrounding the first and second circuits on a semiconductor substrate. A buried layer continuously extending underneath the first and second circuits is formed on the semiconductor substrate, wherein the buried layer interfaces with the first isolation ring for isolating the first and second circuits from a backside bias of the semiconductor substrate. An ion enhanced isolation layer is interposed between the buried layer and well regions on which devices of the first and second circuits are formed, wherein the ion enhanced isolation layer is doped with impurities of a polarity type different from that of the buried layer.

Abstract translation: 用于隔离各种工作电压的第一电路和第二电路的半导体结构包括围绕半导体衬底上的第一和第二电路的第一隔离环。 在第一和第二电路下连续延伸的掩埋层形成在半导体衬底上，其中掩埋层与第一隔离环接合，用于将第一和第二电路与半导体衬底的背面偏置隔离。 离子增强隔离层介于掩埋层和形成有第一和第二电路的器件的阱区之间，其中离子增强隔离层掺杂了与掩埋层不同的极性类型的杂质。

公开(公告)号：US07436043B2

公开(公告)日：2008-10-14

申请号：US11019753

申请日：2004-12-21

Applicant: Tzu-Chiang Sung ,  Chih Po Huang ,  Rann Shyan Yeh ,  Jun Xiu Liu ,  Chi-Hsuen Chang ,  Chung-I Chen

Inventor： Tzu-Chiang Sung ,  Chih Po Huang ,  Rann Shyan Yeh ,  Jun Xiu Liu ,  Chi-Hsuen Chang ,  Chung-I Chen

IPC: H01L21/74

CPC classification number: H01L21/761 ,  H01L21/823878 ,  H01L21/823892 ,  H01L27/0928

Abstract: A semiconductor device includes multiple low voltage N-well (LVNW) areas biased at different potentials and isolated from a substrate by a common N+ buried layer (NBL) and at least one high voltage N-well (HVNW) area. The LVNW areas are coupled to the common, subjacent NBL through a common P+ buried layer (PBL). The method for forming the substrate usable in a semiconductor device includes forming the NBL in a designated low voltage area of a negatively biased P-type semiconductor substrate, forming the PBL in a section of the NBL area by implanting P-type impurity ions such as indium into the PBL, and growing a P-type epitaxial layer over the PBL using conditions that cause the P-type impurity ions to diffuse into the P-type epitaxial layer such that the PBL extends into the NBL. Low-voltage P-well areas are also formed in the P-type epitaxial layer and contact the PBL.

Abstract translation: 半导体器件包括多个以不同电位偏置的低电压N阱（LVNW）区域，并且通过公共N + +掩埋层（NBL）和至少一个高压N阱（ HVNW）区域。 LVNW区域通过公共的P + SUPER +掩埋层（PBL）耦合到公共的下部NBL。 形成可用于半导体器件的衬底的方法包括在负偏压的P型半导体衬底的指定低电压区域中形成NBL，在NBL区的一部分中通过注入P型杂质离子形成PBL 铟化合到PBL中，并且通过使P型杂质离子扩散到P型外延层中使得PBL延伸到NBL中的条件在PBL上生长P型外延层。 在P型外延层中也形成低压P阱区，并与PBL接触。