摘要:
An integrated circuit (IC) includes at least one memory array having a plurality of memory cells arranged in a plurality of rows and columns, the array also having a plurality of word lines for accessing rows of cells and a plurality bit lines for accessing columns of cells. A voltage differential generating circuit is operable to provide a differential wordline voltage (VWL) relative to an array supply voltage, wherein the differential is a function of the array supply voltage.
摘要:
Performance matching devices in SOI are improved by thermally isolating matched devices within a continuous body of active material. Matched devices are isolated by an insulating wall of silicon dioxide (which surrounds the devices) and the oxide layer beneath, and are arranged to minimize effects from external thermal sources.
摘要:
The present invention provides an integrated virtual voltage circuit for use with a sub-circuit. In one embodiment, the integrated virtual voltage circuit includes a MOS transistor switch coupled to a supply voltage and configured to employ a drain to provide an operating voltage for the sub-circuit during switch activation. Additionally, the integrated virtual voltage circuit also includes a connection unit coupled to the MOS transistor switch and configured to provide a standby voltage for the sub-circuit during deactivation of the MOS transistor switch wherein the standby voltage is based on a static coupling of the drain to a body region of the MOS transistor switch. In an alternative embodiment, the connection unit is further configured to connect a voltage reference between the supply voltage and the drain of the MOS transistor switch to determine the standby voltage.
摘要:
The present invention provides a thermostatic biasing controller for use with an integrated circuit. In one embodiment, the thermostatic biasing controller includes a temperature sensing unit configured to determine an operating temperature of the integrated circuit. Additionally, the thermostatic biasing controller also includes a voltage controlling unit coupled to the temperature sensing unit and configured to provide a back-bias voltage corresponding to the operating temperature based on reducing a quiescent current of the integrated circuit.
摘要:
Systems and methods are provided for maintaining performance of an integrated circuit at a reduced power. The systems and methods employ a performance monitor that generates a signal indicative of at least one performance characteristic of at least a portion of a critical path associated with the integrated circuit. The system further comprises a supply control that adjusts a supply voltage of the integrated circuit to maintain performance at a reduced power based on the signal. A temperature adjustment component can be provided to adjust the signal to compensate for temperature offsets associated with performance of the performance monitor relative to performance of the critical path over different operating temperatures. A performance measurement of the performance monitor can be determined based on the concurrent triggering of the performance monitor and the critical path.
摘要:
A novel technique for translating a string displayable on a user interface element in a graphical user interface provides a reliable translation without the use of a dictionary. In an embodiment of the invention, an identification is obtained, wherein the identification identifies the user interface element on which the string is displayed. A list is accessed, comprising the identification and a string in the second language. The list is searched to find the identification for the user interface element. Finally, a string is ascertained in the second language corresponding with the found identification in the list. In another embodiment, a string displayable on a user interface element is translated when the location of a user interface selection device on a display is at a location shared by the user interface element.
摘要:
In one aspect of the invention, a semiconductor die includes a plurality of resistive elements operable to receive a voltage differential between at least two of the resistive elements. The semiconductor die also includes a test circuit coupled to at least three tap points along the resistive elements. The test circuit is operable to measure a voltage at at least two of the tap points. A difference in the voltages between the at least two tap points is proportional to a resistance of the one or more resistive elements between the at least two tap points.
摘要:
A capacitor circuit and method to reduce layout area, leakage current, and to improve yield is disclosed. The circuit includes an output terminal (100), a plurality of circuit elements (322, 326, 330), and a plurality of transistors (320, 324, 328). Each transistor has a control terminal (314, 316, 318) and a current path coupled between the output terminal and a respective circuit element of the plurality of circuit elements. A control circuit (300) has a plurality of output terminals (314, 316, 318). Each output terminal is coupled to the control terminal of a respective transistor of the plurality of transistors. The control circuit produces control signals at respective output terminals to selectively turn off at least one transistor and turn on at least other transistors of the plurality of transistors at a first time.
摘要:
An electronic device (10), comprising a plurality of data storage cells (12), collectively operable in a data access mode and separately in a sleep mode. The sleep mode comprises a period of time during which the plurality of data cells are not accessed and during which a data state stored in each cell in the plurality of data cells is to be maintained at a valid state. The electronic device further comprises circuitry (18′) for providing at least one temperature-dependent voltage to at least one storage device in each cell in the plurality of data storage cells during the sleep mode.
摘要:
The circuit and method for turning on an internal voltage rail includes: coupling a first transistor between a power supply node and an internal voltage rail node; mirroring a current from a second transistor to the first transistor during a turn-on time period; and coupling a control node of the first transistor to a bias voltage node after the turn-on time period. This solution permits current controlled turn-on of the first transistor, but a fully switched-on first transistor once turn-on is complete.