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    Methods of forming semiconductor constructions
    51.
    发明申请
    Methods of forming semiconductor constructions 有权
    形成半导体结构的方法

    公开(公告)号：US20070148982A1

    公开(公告)日：2007-06-28

    申请号：US11319328

    申请日：2005-12-27

    申请人： David Keller

    发明人： David Keller

    IPC分类号： H01L21/302 ,  H01L21/461

    CPC分类号： H01L21/32136 ,  H01L21/32137 ,  H01L21/823842 ,  H01L21/823864

    摘要： The invention includes methods of forming semiconductor constructions in which a single etch is utilized to penetrate through a titanium-containing layer and partially into a silicon-containing layer beneath the titanium-containing layer. The etch can utilize CH2F2. The silicon-containing layer can contain an n-type doped region and a p-type doped region. In some methods, the silicon-containing layer can contain an n-type doped region laterally adjacent a p-type doped region, and the processing can be utilized to form a transistor gate containing n-type doped silicon simultaneously with the formation of a transistor gate containing p-type doped silicon.

    摘要翻译： 本发明包括形成半导体结构的方法，其中使用单个蚀刻来穿透含钛层并部分地进入含钛层下面的含硅层。 蚀刻可以利用CH 2 2 F 2 N 2。 含硅层可以包含n型掺杂区域和p型掺杂区域。 在一些方法中，含硅层可以包含横向邻近p型掺杂区域的n型掺杂区域，并且该处理可用于形成包含n型掺杂硅的晶体管栅极，同时形成晶体管 栅极包含p型掺杂硅。

    Etching processes and methods of forming semiconductor constructions
    52.
    发明申请
    Etching processes and methods of forming semiconductor constructions 审中-公开
    蚀刻工艺和形成半导体结构的方法

    公开(公告)号：US20070029283A1

    公开(公告)日：2007-02-08

    申请号：US11196681

    申请日：2005-08-02

    申请人： David Keller

    发明人： David Keller

    IPC分类号： C23F1/00 ,  C03C15/00 ,  B44C1/22

    CPC分类号： H01L21/3065

    摘要： The invention includes a method of processing a substrate. A substrate is provided within a high-density plasma reactor. A low-density plasma is generated and the substrate is plasma etched under low-density plasma conditions. The invention includes a method of forming a gate stack. A substrate having a plurality of layers is provided. A layer of nitride material is formed over the plurality of layers. The substrate is positioned within a high-density plasma reactor and a composition is flowed into the reactor while maintaining a mass flow within the reactor of at least 200 sccm. A plasma is generated and utilized to etch the nitride material. The invention includes a method of forming a plurality of features over a semiconductive wafer. A layer of nitride material is provided over a wafer surface. The nitride material is etched within a high-density plasma reactor utilizing low-density plasma conditions.

    摘要翻译： 本发明包括一种处理衬底的方法。 在高密度等离子体反应器内提供衬底。 产生低密度等离子体，并且在低密度等离子体条件下对衬底进行等离子体蚀刻。 本发明包括形成栅叠层的方法。 提供具有多层的基板。 在多个层上形成氮化物层。 衬底位于高密度等离子体反应器内，并将组合物流入反应器，同时保持反应器内的质量流量至少为200sccm。 产生等离子体并用于蚀刻氮化物材料。 本发明包括在半导体晶片上形成多个特征的方法。 在晶片表面上提供一层氮化物材料。 使用低密度等离子体条件在高密度等离子体反应器内蚀刻氮化物材料。

    Electrostatic sensing chuck using area matched electrodes
    53.
    发明授权
    Electrostatic sensing chuck using area matched electrodes 失效
    静电感测卡盘使用区域匹配电极

    公开(公告)号：US06370005B1

    公开(公告)日：2002-04-09

    申请号：US09417736

    申请日：1999-10-14

    申请人： Hoi Cheong Sun ,  Nitin V. Desai ,  William R. Roach ,  David Norman Ludington ,  Timothy Allen Pletcher ,  David Keller ,  Frank B. Lang ,  Peter D. Southgate ,  Joseph T. McGinn

    发明人： Hoi Cheong Sun ,  Nitin V. Desai ,  William R. Roach ,  David Norman Ludington ,  Timothy Allen Pletcher ,  David Keller ,  Frank B. Lang ,  Peter D. Southgate ,  Joseph T. McGinn

    IPC分类号： H02N1300

    CPC分类号： H01L21/6833 ,  H02N13/00

    摘要： Provided is an electrostatic sensing chuck for attracting particles to a portion of a particle contact surface near a deposition electrode, the electrostatic sensing chuck comprising a pixel comprising: a deposition electrode (DE) for selectively establishing an attraction field (Ea) at the particle contact surface; a shield electrode (SE) oppositely biased with respect to the deposition electrode; a charge sensing circuit to measure charge accumulated on each of the deposition electrode and the shield electrode, wherein the charge sensing circuit subtracts a second charge it senses at the shield electrode from a first charge it senses at the deposition electrode, thereby determining accumulated charge at the deposition electrode balanced by accumulated charge at the shield electrode.

    摘要翻译： 提供一种静电感测卡盘，用于将颗粒吸引到沉积电极附近的一部分颗粒接触表面，该静电感测卡盘包括一个像素，该像素包括：沉积电极（DE），用于选择性地在颗粒接触处建立吸引场（Ea） 表面; 相对于沉积电极相对偏置的屏蔽电极（SE）; 电荷感测电路，用于测量在每个沉积电极和屏蔽电极上累积的电荷，其中电荷感测电路在屏蔽电极处从其在沉积电极处感测到的第一电荷中减去其感测的第二电荷，由此确定累积电荷 沉积电极由屏蔽电极处的累积电荷平衡。

    Method of forming contact plugs
    55.
    发明授权
    Method of forming contact plugs 失效
    形成接触塞的方法

    公开(公告)号：US5858865A

    公开(公告)日：1999-01-12

    申请号：US569838

    申请日：1995-12-07

    申请人： Werner Juengling ,  Kirk Prall ,  Gordon Haller ,  David Keller ,  Tyler Lowrey

    发明人： Werner Juengling ,  Kirk Prall ,  Gordon Haller ,  David Keller ,  Tyler Lowrey

    IPC分类号： H01L21/28 ,  H01L21/60 ,  H01L21/768 ,  H01L21/8242 ,  H01L23/485 ,  H01L21/3205

    CPC分类号： H01L27/10888 ,  H01L21/28 ,  H01L21/768 ,  H01L21/76897 ,  H01L23/485 ,  H01L2924/0002 ,  Y10S438/978

    摘要： Within an integrated circuit, a contact plug with a height not extending above the level of the gate/wordline nitride is nonetheless provided with a relatively large contact area or landing pad, significantly larger than the source/drain region to which the contact plug is electrically connected. Methods for producing the inventive contact plug include (1) use of a nitride facet etch, either (a) during a nitride spacer formation etch or (b) during a BPSG etch; (2) using at least one of (a) an isotropic photoresist etch or partial descum to narrow BPSG spacers above the gate/wordline nitride, and (b) a nitride step etch to etch the shoulder area of the gate/wordline nitride exposed by a BPSG etch; and (3) polishing a BPSG layer down to the top of a gate/wordline nitride before any doped polysilicon plug fill, masking for BPSG etch and performing a BPSG etch, etching the photoresist layer through a partial descum, and etching the shoulder area of the gate/wordline nitride exposed thereby.

    摘要翻译： 在集成电路中，具有不延伸在栅极/字线氮化物的高度之上的高度的接触插塞仍然设置有相对较大的接触面积或着陆焊盘，其明显大于接触插塞电接触的源极/漏极区域 连接的。 用于制造本发明接触塞的方法包括（1）在氮化物间隔物形成蚀刻期间使用氮化物刻面蚀刻（a）或（b）在BPSG蚀刻期间; （2）使用（a）各向同性光致抗蚀剂蚀刻或部分除去中的至少一种来窄化栅极/字线氮化物之上的BPSG间隔区，以及（b）氮化物步骤蚀刻以蚀刻暴露于栅极/字线氮化物的肩部区域 BPSG蚀刻; 并且（3）在任何掺杂的多晶硅插塞填充之前将BPSG层向下抛光到栅极/字线氮化物的顶部，掩蔽用于BPSG蚀刻和执行BPSG蚀刻，通过部分除去蚀刻光致抗蚀剂层，并蚀刻 栅极/字线氮化物被曝光。

    Optical fiber cable and device for manufacturing a cable of this kind
    56.
    发明授权
    Optical fiber cable and device for manufacturing a cable of this kind 失效
    用于制造这种电缆的光纤电缆和设备

    公开(公告)号：US5621842A

    公开(公告)日：1997-04-15

    申请号：US532144

    申请日：1995-09-22

    申请人： David Keller

    发明人： David Keller

    IPC分类号： G02B6/44

    CPC分类号： G02B6/4411 ,  G02B6/4403 ,  G02B6/448

    摘要： An optical fiber cable comprises a stacked plurality of optical fiber ribbons each including a plurality of optical fibers disposed side by side in substantially the same plane and all embedded in a common covering or matrix of the ribbon. A protective outer sheath protects the cable against radial compression loads. Reinforcing members withstand traction loads applied to the cable, which further comprises filler members of a material based on reinforcing fibers and having a coefficient of expansion similar to that of the optical fibers embedded in a connecting matrix. The filler members occupy all or part of a volume delimited by the outside surface of the stacked ribbons and by the inside surface of the outer sheath so that the combination of the stack and the filler members has an external contour in cross-section that is substantially circular. The filler members protect the ribbons against radial and longitudinal loads applied to the cable and oppose contraction of the cable by more than 0.2%.

    摘要翻译： 光纤电缆包括堆叠的多个光纤带，每个光纤带包括并排布置在基本上相同的平面中并且全部嵌入带的公共覆盖物或矩阵中的多根光纤。 保护外护套可保护电缆免受径向压缩载荷的影响。 加强构件承受施加到电缆的牵引负载，该负载进一步包括基于增强纤维的材料的填充构件，并且其膨胀系数与嵌入连接矩阵中的光纤类似。 填料构件占据由层叠带的外表面和外护套的内表面限定的体积的全部或一部分，使得堆叠和填充构件的组合具有基本上在横截面上的外部轮廓 圆。 填料构件保护带免受施加到电缆的径向和纵向载荷，并且电缆的收缩反而超过0.2％。

    Apparatus for the automated processing of bulk mail having varied characteristics
    57.
    发明授权
    Apparatus for the automated processing of bulk mail having varied characteristics 失效
    用于自动处理具有不同特征的散装邮件的装置

    公开(公告)号：US5460273A

    公开(公告)日：1995-10-24

    申请号：US175719

    申请日：1993-12-29

    申请人： Albert F. Stevens ,  Robert R. DeWitt ,  Michael E. York ,  David Keller ,  William R. Lile

    发明人： Albert F. Stevens ,  Robert R. DeWitt ,  Michael E. York ,  David Keller ,  William R. Lile

    IPC分类号： B07C1/00 ,  B07C3/02 ,  B43M7/02 ,  B07C5/02

    CPC分类号： B07C3/02 ,  B07C1/00 ,  B43M7/02 ,  B65H2553/41 ,  Y10S209/90

    摘要： An apparatus for the automated processing of bulk mail which incorporates a number of operating stations that serve to accomplish the various aspects of mail extraction, as well as the subsequent processing of extracted documents, and which are operatively associated with one another to serially process envelopes and extracted documents in continuous fashion and substantially independent of their characteristic features. To this end, the operating stations of the apparatus are configured to be as independent as possible of the characteristics of the envelopes and their contents so that envelopes and contents of varied characteristics can be effectively handled by the apparatus without requiring any significant adjustments. As a result, the apparatus is made capable of processing (as a single job if desired) envelopes and contents of varied characteristics, reducing the need to remove non-conforming envelopes and contents from further processing, and increasing the versatility and productivity of the apparatus.

    摘要翻译： 一种用于批量邮件的自动处理的装置，其包括用于完成邮件提取的各个方面的多个操作站以及随后的提取的文档的处理，并且彼此可操作地相关联以串行处理信封和 以连续的方式提取文件，并且基本上独立于其特征。 为此，设备的操作站被配置为尽可能独立于信封及其内容的特征，使得可以由设备有效地处理不同特征的信封和内容，而不需要任何重大的调整。 结果，该设备能够处理（如果需要，作为单个工作）包络和不同特征的内容，减少了从不进一步处理中去除不合格的信封和内容的需要，并且增加了设备的通用性和生产率 。

    Construction and reconstruction of probe microscope images by function envelope methods
    58.
    发明授权
    Construction and reconstruction of probe microscope images by function envelope methods 失效
    通过功能包络方法构建和重建探针显微镜图像

    公开(公告)号：US5450505A

    公开(公告)日：1995-09-12

    申请号：US972703

    申请日：1992-11-06

    申请人： David Keller

    发明人： David Keller

    IPC分类号： G01Q70/10 ,  G06K9/64 ,  G06T5/00 ,  G06K9/00

    CPC分类号： G01Q40/00 ,  B82Y35/00 ,  G06K9/6206 ,  G06T5/002 ,  Y10S977/85

    摘要： An invention provides an arrangement for accomplishing three objects. The first is correcting distortions caused by probe geometry in probe microscope or profilometer data. The second is calculating apparent probe data from models. The third is deducing the shape of the probe tip from a standard or reference sample. The correction of distorted images data is done by mathematically placing one or more known or hypothetical tip surfaces at one or more points of the distorted image surface to provide a reconstructed surface, which is the envelope surface formed by all such tip surfaces. The calculation of probe microscope image data from one or more mathematical models of sample surfaces is done by mathematically placing one or more known or hypothetical inverted probe tip surface at one or more points on the mathematical model surface, and taking the image surface to be the envelope formed by all such tip surfaces. The deduction of probe tip shape from an image of a known standard or reference surface at one or more points of the image surface, and taking the probe tip surface to be the envelope of all such standard or reference surfaces.

    摘要翻译： 本发明提供了一种用于完成三个物体的装置。 第一个是在探针显微镜或轮廓仪数据中校正由探针几何形状引起的扭曲。 第二个是从模型中计算表观探针数据。 第三个是从标准样品或参考样品中推导出探针尖端的形状。 扭曲图像数据的校正是通过将失真图像表面的一个或多个点上的一个或多个已知或假想的尖端表面数学地放置以提供重建的表面来实现的，该重建表面是由所有这些尖端表面形成的包络面。 通过在数学模型表面上的一个或多个点上数学地放置一个或多个已知或假设的倒置探针尖端表面，并将图像表面作为图像表面来进行从样本表面的一个或多个数学模型计算探针显微镜图像数据 由所有这些尖端表面形成的信封。 从图像表面的一个或多个点处的已知标准或参考表面的图像中减去探针尖端形状，并将探针尖端表面作为所有这些标准或参考表面的包络线。