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    Method of making a fuse in a semiconductor device and a semiconductor device having a fuse
    54.
    发明授权
    Method of making a fuse in a semiconductor device and a semiconductor device having a fuse 有权
    在半导体器件中制造熔丝的方法和具有熔丝的半导体器件

    公开(公告)号：US06175145B1

    公开(公告)日：2001-01-16

    申请号：US09163826

    申请日：1998-09-30

    申请人： Dong-Hun Lee ,  Jong-Hyon Ahn

    发明人： Dong-Hun Lee ,  Jong-Hyon Ahn

    IPC分类号： H01L2900

    CPC分类号： H01L23/5258 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The present invention provides a fuse of a semiconductor device and a method of forming a fuse of a semiconductor device. The method of the invention includes forming an underlying metal conductor on a semiconductor substrate, forming an insulating film over the underlying metal conductor, and selectively etching regions of the insulating film. One of the regions of the insulating film is etched to form a via contact region exposing the underlying metal conductor. A second region is etched to form a groove in the insulating film for the fuse metal. Metal is buried within the second etched region of the insulating film and the via contact region to respectively form a fuse metal pattern and a via contact metal layer. The fuse metal pattern can be formed from copper and/or tungsten.

    摘要翻译： 本发明提供一种半导体器件的熔丝和形成半导体器件的熔丝的方法。 本发明的方法包括在半导体衬底上形成下面的金属导体，在下面的金属导体上形成绝缘膜，并选择性地蚀刻绝缘膜的区域。 蚀刻绝缘膜的一个区域以形成暴露下面的金属导体的通孔接触区域。 蚀刻第二区域以在用于熔丝金属的绝缘膜中形成凹槽。 金属被埋在绝缘膜和通孔接触区域的第二蚀刻区域内，以分别形成熔丝金属图案和通孔接触金属层。 熔丝金属图案可以由铜和/或钨形成。

    Method of making a fuse in a semiconductor device and a semiconductor device having a fuse
    55.
    发明授权
    Method of making a fuse in a semiconductor device and a semiconductor device having a fuse 失效
    在半导体器件中制造熔丝的方法和具有熔丝的半导体器件

    公开(公告)号：US6074940A

    公开(公告)日：2000-06-13

    申请号：US122501

    申请日：1998-07-24

    申请人： Dong-Hun Lee ,  Jong-Hyon Ahn

    发明人： Dong-Hun Lee ,  Jong-Hyon Ahn

    IPC分类号： H01L21/82 ,  H01L23/525 ,  H01L21/44

    CPC分类号： H01L23/5258 ,  H01L2924/0002 ,  Y10S148/055

    摘要： The present invention provides a fuse of a semiconductor device and a method of forming a fuse of a semiconductor device. The method of the invention includes forming an underlying metal conductor on a semiconductor substrate, forming an insulating film over the underlying metal conductor, and selectively etching regions of the insulating film. One of the regions of the insulating film is etched to form a via contact region exposing the underlying metal conductor. A second region is etched to form a groove in the insulating film for the fuse metal. Metal is buried within the second etched region of the insulating film and the via contact region to respectively form a fuse metal pattern and a via contact metal layer.

    摘要翻译： 本发明提供一种半导体器件的熔丝和形成半导体器件的熔丝的方法。 本发明的方法包括在半导体衬底上形成下面的金属导体，在下面的金属导体上形成绝缘膜，并选择性地蚀刻绝缘膜的区域。 蚀刻绝缘膜的一个区域以形成暴露下面的金属导体的通孔接触区域。 蚀刻第二区域以在用于熔丝金属的绝缘膜中形成凹槽。 金属被埋在绝缘膜和通孔接触区域的第二蚀刻区域内，以分别形成熔丝金属图案和通孔接触金属层。

    DUAL-PORT SRAM DEVICES AND METHODS OF MANUFACTURING THE SAME
    56.
    发明申请
    DUAL-PORT SRAM DEVICES AND METHODS OF MANUFACTURING THE SAME 有权
    双端口SRAM设备及其制造方法

    公开(公告)号：US20160190141A1

    公开(公告)日：2016-06-30

    申请号：US14965316

    申请日：2015-12-10

    申请人： KYO-WOOK LEE ,  Dong-Hun Lee ,  Hee-Bum Hong ,  Yong-Rae Cho

    发明人： KYO-WOOK LEE ,  Dong-Hun Lee ,  Hee-Bum Hong ,  Yong-Rae Cho

    IPC分类号： H01L27/11 ,  H01L29/78 ,  H01L23/48

    CPC分类号： H01L27/1104 ,  H01L29/7851 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A dual-port SRAM device includes a substrate having a field region and first to fourth active fins extending in a first direction, and a unit cell having first to eighth gate structures. The first and second gate structures are on the first, second and fourth active fins, and extend in a second direction crossing the first direction. The third and fourth gate structures are on the first, second and third active fins, and extend in the second direction. The fifth and sixth gate structures are on the third active fin, and extend in the second direction. The seventh and eighth gate structures are on the fourth active fin, and extend in the second direction. The sixth gate structure is electrically connected to the third gate structure through the first contact plug, and the seventh gate structure is electrically connected to the second gate structure through a second contact plug.

    摘要翻译： 双端口SRAM器件包括具有场区域和在第一方向上延伸的第一至第四活性鳍片的衬底和具有第一至第八栅极结构的单元电池。 第一和第二栅极结构在第一，第二和第四活性鳍片上，并且沿与第一方向交叉的第二方向延伸。 第三和第四栅极结构在第一，第二和第三活性鳍片上，并且在第二方向上延伸。 第五和第六栅极结构在第三活性鳍上，并且在第二方向上延伸。 第七和第八栅极结构在第四活性鳍上，并沿第二方向延伸。 第六栅极结构通过第一接触插塞电连接到第三栅极结构，并且第七栅极结构通过第二接触插塞电连接到第二栅极结构。

    Method for preparing polyacrylonitrile-based polymer for preparation of carbon fiber using microwave and method for preparing carbon fiber using the same
    57.
    发明授权
    Method for preparing polyacrylonitrile-based polymer for preparation of carbon fiber using microwave and method for preparing carbon fiber using the same 有权
    使用微波制备用于制备碳纤维的聚丙烯腈类聚合物的方法及使用其制备碳纤维的方法

    公开(公告)号：US08685361B2

    公开(公告)日：2014-04-01

    申请号：US13461241

    申请日：2012-05-01

    申请人： Kap-Seung Yang ,  Sung-Ho Lee ,  Hyang-Hoon Chae ,  Dong-Hun Lee

    发明人： Kap-Seung Yang ,  Sung-Ho Lee ,  Hyang-Hoon Chae ,  Dong-Hun Lee

    IPC分类号： D01F9/12

    CPC分类号： D01F9/225 ,  C08L33/18 ,  C08L2203/12

    摘要： Disclosed therein is a method for preparing a polyacrylonitrile-based polymer for preparation of carbon fiber having a melting point controlled by selecting an optimal energy of microwave, and a method for preparing a carbon fiber through melt spinning using the preparation method for polyacrylonitrile-based polymer. The present invention uses microwave to control the properties of the polyacrylonitrile-based polymer in a simplified way and prepare the polymer optimized for preparation of carbon fiber precursor through melt spinning for a short polymerization time, and provides a means for mass production of the polyacrylonitrile-based polymer being suitable for melt spinning at a temperature lower than the stabilization temperature and acquiring properties adequate to preparation of carbon fiber through stabilization. Hence, the present invention is expected to contribute to mass production of high-performance carbon fibers at reduced cost.

    摘要翻译： 本发明公开了一种制备通过选择微波最佳能量来控制熔点的碳纤维的聚丙烯腈系聚合物的制造方法以及使用聚丙烯腈类聚合物的制备方法通过熔融纺丝制备碳纤维的方法 。 本发明使用微波以简单的方式控制聚丙烯腈类聚合物的性能，并通过熔融纺丝制备优化用于制备碳纤维前体的聚合物，聚合时间短，并提供了用于大量生产聚丙烯腈 - 基于聚合物适合于在低于稳定温度的温度下熔融纺丝，并通过稳定性获得足以制备碳纤维的性能。 因此，本发明预期有助于以低成本大量生产高性能碳纤维。

    THIN FILM TYPE SOLAR CELL AND FABRICATION METHOD THEREOF
    58.
    发明申请
    THIN FILM TYPE SOLAR CELL AND FABRICATION METHOD THEREOF 有权
    薄膜型太阳能电池及其制造方法

    公开(公告)号：US20130228218A1

    公开(公告)日：2013-09-05

    申请号：US13560951

    申请日：2012-07-27

    申请人： Sung-Chul Lee ,  Doo-Youl Lee ,  Young-Jin Kim ,  Young-Su Kim ,  Young-Soo Kim ,  Dong-Hun Lee

    发明人： Sung-Chul Lee ,  Doo-Youl Lee ,  Young-Jin Kim ,  Young-Su Kim ,  Young-Soo Kim ,  Dong-Hun Lee

    IPC分类号： H01L31/0224 ,  H01L31/18

    CPC分类号： H01L31/065 ,  H01L31/02168 ,  H01L31/022441 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： A method of fabricating a solar cell includes forming a doped portion having a first conductive type on a semiconductor substrate, growing an oxide layer on the semiconductor substrate, forming a plurality of recess portions in the oxide layer, further growing the oxide layer on the semiconductor substrate, forming a doped portion having a second conductive type on areas of the semiconductor substrate corresponding to the recess portions, forming a first conductive electrode electrically coupled to the doped portion having the first conductive type, and forming a second conductive electrode on the semiconductor substrate and electrically coupled to the doped portion having the second conductive type, wherein a gap between the doped portions having the first and second conductive types corresponds to a width of the oxide layer formed by further growing the oxide layer.

    摘要翻译： 一种制造太阳能电池的方法包括在半导体衬底上形成具有第一导电类型的掺杂部分，在半导体衬底上生长氧化物层，在氧化物层中形成多个凹陷部分，在半导体上进一步生长氧化物层 在所述半导体衬底的与所述凹部对应的区域上形成具有第二导电类型的掺杂部分，形成与所述第一导电类型的所述掺杂部分电耦合的第一导电电极，以及在所述半导体衬底上形成第二导电电极 并且电耦合到具有第二导电类型的掺杂部分，其中具有第一和第二导电类型的掺杂部分之间的间隙对应于通过进一步生长氧化物层形成的氧化物层的宽度。

    Inverter driver and lamp driver using the same
    59.
    发明授权
    Inverter driver and lamp driver using the same 失效
    逆变器驱动器和灯驱动器使用相同

    公开(公告)号：US08305009B2

    公开(公告)日：2012-11-06

    申请号：US12398030

    申请日：2009-03-04

    申请人： Dong-Hun Lee ,  Jae-Soon Choi

    发明人： Dong-Hun Lee ,  Jae-Soon Choi

    IPC分类号： H05B41/36

    CPC分类号： H05B41/2825

    摘要： An inverter driver controls an inverter that supplies driving voltages to a plurality of discharge lamps. The inverter driver includes a first amplifier having an output terminal, a second amplifier having an output terminal connected to the output terminal of the first amplifier, and a capacitor connected between the output terminal and a ground source. The first amplifier outputs only a negative current corresponding to the maximum value among the driving voltages supplied to the plurality of discharge lamps, and the second amplifier outputs a current corresponding to the maximum value among the driving currents flowing through the plurality of discharge lamps. Such inverter driver controls the inverter according to a voltage of the capacitor.

    摘要翻译： 逆变器驱动器控制向多个放电灯提供驱动电压的逆变器。 逆变器驱动器包括具有输出端的第一放大器，具有连接到第一放大器的输出端的输出端的第二放大器和连接在输出端和地源之间的电容器。 第一放大器仅输出与提供给多个放电灯的驱动电压中的最大值对应的负电流，并且第二放大器输出对应于流过多个放电灯的驱动电流中的最大值的电流。 这种逆变器驱动器根据电容器的电压来控制逆变器。

    Method of and apparatus for analyzing ions adsorbed on surface of mask
    60.
    发明授权
    Method of and apparatus for analyzing ions adsorbed on surface of mask 有权
    用于分析吸附在面罩表面上的离子的方法和装置

    公开(公告)号：US07842916B2

    公开(公告)日：2010-11-30

    申请号：US12197052

    申请日：2008-08-22

    申请人： Dong-Hun Lee ,  Hae-Young Jeong ,  Byung-Cheol Cha ,  Sung-Jae Han

    发明人： Dong-Hun Lee ,  Hae-Young Jeong ,  Byung-Cheol Cha ,  Sung-Jae Han

    IPC分类号： G01N33/00

    CPC分类号： G01N1/4055 ,  G01N30/96 ,  G01N2001/4061 ,  G03F1/84 ,  Y10T436/25125

    摘要： A method of analyzing ions adsorbed on a surface of a mask for pattern formation of a semiconductor device, and an apparatus using the same are disclosed. The ion analyzing method includes: filling a heating container within a main chamber with a predetermined amount of a solvent; immersing a mask in the solvent-filled heating container; raising an internal pressure of the chamber to a predetermined level by supplying gas into the chamber; separating ions from a surface of the mask by heating the solvent within the heating container at a predetermined temperature for a predetermined period; and analyzing the ions by collecting the solvent.

    摘要翻译： 公开了分析吸附在掩模的表面上用于图案形成半导体器件的离子的方法和使用其的装置。 离子分析方法包括：用预定量的溶剂填充主室内的加热容器; 将掩模浸入溶剂填充的加热容器中; 通过将气体供应到室中来将室的内部压力提高到预定水平; 通过在预定温度下将加热容器内的溶剂加热预定的时间，从而将掩模与掩模的表面分离; 并通过收集溶剂分析离子。