公开(公告)号：US20130073786A1

公开(公告)日：2013-03-21

申请号：US13234446

申请日：2011-09-16

申请人： Hanmant P. Belgal ,  Ning Wu ,  Paul D. Ruby ,  Andrew Vogan ,  Xin Guo ,  Ivan Kalastirsky ,  Mase J. Taub

发明人： Hanmant P. Belgal ,  Ning Wu ,  Paul D. Ruby ,  Andrew Vogan ,  Xin Guo ,  Ivan Kalastirsky ,  Mase J. Taub

IPC分类号： G06F12/02 ,  G06F12/00

CPC分类号： G06F12/0246 ,  G06F2212/7205 ,  G11C16/0483 ,  G11C16/3422

摘要： Described are an apparatus, system, and method for improving read endurance for a non-volatile memory (NVM). The method comprises: determining a read count corresponding to a block of NVM; identifying whether the block of NVM is a partially programmed block (PPB); comparing the read count with a first threshold when it is identified that the block is a PPB; and when identified otherwise, comparing the read count with a second threshold, wherein the first threshold is smaller than the second threshold. The method further comprises: identifying a block that is a PPB; determining a first word line corresponding to un-programmed page of the PPB; and sending the first word line to the NVM, wherein the NVM to apply: a first read voltage level to word lines corresponding to the un-programmed pages of the PPB, and a second read voltage level to word lines corresponding to programmed pages of the PPB.

摘要翻译： 描述了用于改善非易失性存储器（NVM）的读取耐久性的装置，系统和方法。 该方法包括：确定对应于NVM块的读取计数; 识别NVM的块是否是部分编程块（PPB）; 当识别出块是PPB时，将读取计数与第一阈值进行比较; 并且当另外标识时，将读取计数与第二阈值进行比较，其中第一阈值小于第二阈值。 该方法还包括：识别作为PPB的块; 确定对应于PPB的未编程页面的第一字线; 以及将所述第一字线发送到所述NVM，其中所述NVM应用：对应于所述PPB的未编程页面的字线的第一读取电压电平和对应于所述PPB的编程页面的字线的第二读取电压电平 PPB。

公开(公告)号：US20120122863A1

公开(公告)日：2012-05-17

申请号：US12673103

申请日：2008-08-12

申请人： Xin Guo ,  Ho Yin Lo ,  Chuk Chui Man ,  Hidenori Takahashi

发明人： Xin Guo ,  Ho Yin Lo ,  Chuk Chui Man ,  Hidenori Takahashi

IPC分类号： A61K31/517 ,  C07D417/06 ,  A61P9/10 ,  A61K31/5377 ,  A61P9/12 ,  A61P13/12 ,  A61P9/06 ,  C07D413/14 ,  C07D403/06 ,  A61P9/00

CPC分类号： C07D403/06 ,  C07D417/06

摘要： Disclosed are small molecule inhibitors which are useful in treating various diseases and conditions involving Chymase.

摘要翻译： 公开了可用于治疗涉及糜酶的各种疾病和病症的小分子抑制剂。

公开(公告)号：US08179627B2

公开(公告)日：2012-05-15

申请号：US12797963

申请日：2010-06-10

申请人： Dar-Der Chang ,  Ken Hong ,  Byeung Jun Lee ,  Xin Guo

发明人： Dar-Der Chang ,  Ken Hong ,  Byeung Jun Lee ,  Xin Guo

IPC分类号： G11B5/09

CPC分类号： G11B5/012 ,  G11B20/1217 ,  G11B2020/1277 ,  G11B2020/1297 ,  G11B2220/2516

摘要： A hard disk drive that includes a disk with data written onto a plurality of tracks, a spindle motor that rotates the disk, and a head that is coupled to the disk. The disk drive also includes a circuit that writes data onto a first writable shingle band of tracks if the first writable shingle band is adjacent to a guard band of tracks. The first writable shingle band includes a number of tracks that is a function of a head width. The guard band of tracks is capable of becoming a writable shingle band. Changing the designation of a shingle band between guard and writable creates floating guard bands. The creation of floating guard bands allows for the writing of a single band without having to move and restore adjacent tracks until reaching a fixed guard band as required in the prior art.

摘要翻译： 一种硬盘驱动器，其包括具有写入多个磁道的数据的磁盘，旋转该磁盘的主轴电机和耦合到该磁盘的磁头。 磁盘驱动器还包括一个电路，如果第一个可写入的瓦带与轨道的保护带相邻，则将数据写入轨道的第一可写入板带上。 第一可写入板带包括多个磁道，其是磁头宽度的函数。 轨道的守卫带能够成为一个可写的木瓦带。 改变防护和可写之间的瓦楞带的名称会创建浮动防护带。 浮动保护带的创建允许写入单个频带，而不必移动和恢复相邻轨道，直到达到现有技术中所需的固定保护频带。

公开(公告)号：US20120108597A1

公开(公告)日：2012-05-03

申请号：US13146765

申请日：2010-01-26

申请人： Xin Guo ,  Chuk Chui Man ,  Hidenori Takahashi

发明人： Xin Guo ,  Chuk Chui Man ,  Hidenori Takahashi

IPC分类号： A61K31/519 ,  C07D475/02 ,  C07D487/04 ,  A61P9/04 ,  A61P11/06 ,  A61P9/00 ,  A61P9/12 ,  A61P29/00 ,  A61P9/10 ,  A61P13/12 ,  A61P25/00 ,  C07D471/04 ,  A61P11/00

CPC分类号： C07D475/02 ,  C07D471/04

摘要： Disclosed are small molecule inhibitors of the formula (I), which are useful in treating various diseases and conditions involving chymase.

摘要翻译： 公开了式（I）的小分子抑制剂，其可用于治疗涉及糜酶的各种疾病和病症。

公开(公告)号：US07020022B1

公开(公告)日：2006-03-28

申请号：US10887782

申请日：2004-07-09

申请人： John Wang ,  Zhigang Wang ,  Xin Guo

发明人： John Wang ,  Zhigang Wang ,  Xin Guo

IPC分类号： G11C16/00

CPC分类号： G11C16/28

摘要： A method for standard reference cell design is herein disclosed. The method includes determining a first number of individual bits to be employed in a standard reference cell design based on the number of individual bits that are included in core memory cells that are to be measured using the standard reference cell. The method further includes determining a range of variation in the core memory cells to be measured that is due to process variation in the generation of the core memory cells. In addition, the method includes determining an additional number of individual bits to be included in the standard reference cell design based on the determined range of variation. A standard reference cell that includes a number of individual bits equal to the sum of both the first and the additional number of individual bits is generated.

摘要翻译： 本文公开了一种用于标准参考电池设计的方法。 该方法包括基于使用标准参考小区来测量的核心存储器单元中包含的各个比特的数量来确定在标准参考小区设计中采用的单个比特的第一数量。 该方法还包括确定由于核心存储器单元的产生中的过程变化而导致的要测量的核心存储器单元的变化范围。 此外，该方法包括基于所确定的变化范围来确定要包括在标准参考单元设计中的附加数量的单独位。 生成包括等于第一个和另外个数的个数之和的个别位数的标准参考单元。

公开(公告)号：US06606273B1

公开(公告)日：2003-08-12

申请号：US10121140

申请日：2002-04-11

申请人： Xin Guo ,  Nian Yang ,  Zhigang Wang

发明人： Xin Guo ,  Nian Yang ,  Zhigang Wang

IPC分类号： G11C700

CPC分类号： G11C29/50004 ,  G11C16/04 ,  G11C29/006 ,  G11C29/50

摘要： Methods are disclosed for determining tunnel oxide reliability of flash memory devices in a wafer prior to sorting and packaging without damaging or stressing the devices. The methods comprise measuring an initial threshold voltage of a test cell having the same tunnel oxide as other flash cells on the wafer, applying an erase stress to the test cell for a first time period and a program stress to the test cell for a second time period, and measuring the final threshold voltage of the test cell. The difference between the initial and final threshold voltages is then used to determine or estimate the tunnel oxide reliability of the flash memory cells on the wafer.

摘要翻译： 公开了用于在分选和包装之前确定晶片中闪存器件的隧道氧化物可靠性的方法，而不会损坏或强调器件。 该方法包括测量具有与晶片上的其它闪存单元相同的隧道氧化物的测试单元的初始阈值电压，将第一时间段的擦除应力施加到测试单元上，并且向测试单元施加程序应力第二次 周期，并测量测试单元的最终阈值电压。 然后使用初始阈值电压和最终阈值电压之间的差异来确定或估计晶片上闪存单元的隧道氧化物可靠性。

公开(公告)号：US10952080B2

公开(公告)日：2021-03-16

申请号：US16300061

申请日：2017-04-18

申请人： Xin Guo ,  Sony Corporation

发明人： Xin Guo ,  Chen Sun

IPC分类号： H04W16/14 ,  H04W72/04 ,  H04W48/16 ,  H04W72/08 ,  H04L27/00

摘要： Provided in the present disclosure are a spectrum management device and method, a geographic location database, a coexistence discovery device, and subsystems for use in a radio communication system comprising a main system and subsystems. The spectrum management device comprises: a processing circuit, which is configured to: acquire spectrum usage information and spectrum adjustment capability information of subsystems managed by the spectrum management device, the spectrum usage information corresponding to information related to used spectrums assigned to and used by each subsystem, the spectrum adjustment capability information corresponding to information related to whether the subsystems support a spectrum adjustment operation, and an adjustment of the spectrums of the subsystems managed by the spectrum management device is determined on the basis of the spectrum usage information and the spectrum adjustment capability information, thus the interference caused by the subsystems as a result of spectrum usage to the main system is limited within a permissible range of the main system. The spectrum management device and method, the geographic location database, the coexistence discovery device, and the subsystems of the present disclosure achieve highly efficient use of spectrum resources.

公开(公告)号：US10667139B2

公开(公告)日：2020-05-26

申请号：US16346545

申请日：2017-12-13

申请人： Sony Corporation ,  Chen Sun ,  Xin Guo

发明人： Chen Sun ,  Xin Guo

IPC分类号： H04W16/10 ,  H04L5/00 ,  H04W16/14

摘要： A frequency spectrum management device includes a processing circuit and is configured so that: a first subsystem manages the frequency spectrum management device, an allocation coefficient between other subsystems and the first subsystem is determined on the basis of the distances from the first subsystem and the other subsystems to a main system, the allocation coefficient expresses the degree of interference of aggregated interference that the other subsystems and the first subsystem produce with respect to the main system; and a frequency spectrum resource is allocated to the first subsystem on the basis of the allocation coefficient. The use of the frequency spectrum management device, the electronic device, and the method executed thereby of the present disclosure increases the degree of rationality of frequency spectrum resource allocation for the subsystems.

公开(公告)号：US09164836B2

公开(公告)日：2015-10-20

申请号：US13976007

申请日：2011-12-28

申请人： Xin Guo ,  Kiran Pangal ,  Yogesh B. Wakchaure ,  Paul D. Ruby ,  Ravi J. Kumar

发明人： Xin Guo ,  Kiran Pangal ,  Yogesh B. Wakchaure ,  Paul D. Ruby ,  Ravi J. Kumar

IPC分类号： G06F11/00 ,  G06F11/10 ,  G11C11/56 ,  G11C16/06 ,  G11C16/26 ,  G11C16/34

CPC分类号： G06F11/1068 ,  G11C11/5642 ,  G11C16/06 ,  G11C16/26 ,  G11C16/3409

摘要： Examples are disclosed for cycling endurance extending for memory cells of a non-volatile memory array. The examples include implementing one or more endurance extending schemes based on program/erase cycle counts or a failure trigger. The one or more endurance extending schemes may include a gradual read window expansion, a gradual read window shift, an erase blank check algorithm, a dynamic soft-program or a dynamic pre-program.

摘要翻译： 公开了用于对非易失性存储器阵列的存储器单元进行扩展的循环耐久性的示例。 这些示例包括基于程序/擦除循环计数或故障触发来实现一个或多个耐力扩展方案。 一个或多个耐力扩展方案可以包括逐渐读取窗口扩展，逐渐读取窗口移位，擦除空白校验算法，动态软程序或动态预编程。

公开(公告)号：US09150577B2

公开(公告)日：2015-10-06

申请号：US13513954

申请日：2010-11-30

申请人： Stephen J. Boyer ,  Donghong Amy Gao ,  Xin Guo ,  Thomas Martin Kirrane, Jr. ,  Christopher Ronald Sarko ,  Roger John Snow ,  Fariba Soleymanzadeh ,  Yunlong Zhang

发明人： Stephen J. Boyer ,  Donghong Amy Gao ,  Xin Guo ,  Thomas Martin Kirrane, Jr. ,  Christopher Ronald Sarko ,  Roger John Snow ,  Fariba Soleymanzadeh ,  Yunlong Zhang

IPC分类号： C07D487/04 ,  C07D487/20 ,  C07D491/20

CPC分类号： C07D487/04 ,  C07D487/20 ,  C07D491/20

摘要： Disclosed are novel compounds which inhibit RSK, methods of making such compounds and pharmaceutical compositions comprising such compounds. Also disclosed are methods of treating RSK2 regulated disorders using compounds of the invention.

摘要翻译： 公开了抑制RSK的新化合物，制备这些化合物的方法和包含这些化合物的药物组合物。 还公开了使用本发明化合物治疗RSK2调节性疾病的方法。