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    Array of integrated pixel and memory cells for deep in-sensor, in-memory computing
    53.
    发明授权
    Array of integrated pixel and memory cells for deep in-sensor, in-memory computing 有权

    公开(公告)号：US11468146B2

    公开(公告)日：2022-10-11

    申请号：US16705434

    申请日：2019-12-06

    Applicant: GLOBALFOUNDRIES U.S. Inc.

    Inventor： Akhilesh Jaiswal ,  Ajey Poovannummoottil Jacob

    IPC: G11C11/408 ,  G06F17/16 ,  H01L27/108 ,  H01L27/146 ,  G11C11/4094 ,  G11C17/06 ,  G11C13/00 ,  G06N3/063

    Abstract: Disclosed are embodiments of an integrated circuit structure (e.g., a processing chip), which includes an array of integrated pixel and memory cells configured for deep in-sensor, in-memory computing (e.g., of neural networks). Each cell incorporates a memory structure (e.g., DRAM structure or a ROM structure) with a storage node, which stores a first data value (e.g., a binary weight value), and a sensor connected to a sense node, which outputs a second data value (e.g., an analog input value). Each cell is selectively operable in a functional computing mode during which the voltage level on a bit line is adjusted as a function of both the first data value and the second data value. Each cell is further selectively operable in a storage node read mode. Furthermore, depending upon the type of memory structure (e.g., a DRAM structure), each cell is selectively operable in a storage node write mode.

    Photonic component with distributed Bragg reflectors
    54.
    发明授权
    Photonic component with distributed Bragg reflectors 有权

    公开(公告)号：US11340403B2

    公开(公告)日：2022-05-24

    申请号：US16807942

    申请日：2020-03-03

    Applicant: GLOBALFOUNDRIES U.S. Inc.

    Inventor： Yusheng Bian ,  Ajey Poovannummoottil Jacob

    IPC: G02B6/35 ,  G02B6/293 ,  G02B6/36 ,  G02B6/42 ,  G02B6/12 ,  G02B6/122

    Abstract: One illustrative device disclosed herein includes a layer of semiconductor material and a first Bragg reflector structure positioned in the layer of semiconductor material, wherein the first Bragg reflector structure comprises a plurality of dielectric elements and a first internal area defined by an innermost of the first plurality of dielectric elements. In this example, the device also includes an optical component positioned above the layer of semiconductor material, wherein at least a portion of the optical component is positioned within a vertical projection of the first internal area.

    IMAGE SENSOR INCORPORATING AN ARRAY OF OPTICALLY SWITCHABLE MAGNETIC TUNNEL JUNCTIONS
    56.
    发明申请
    IMAGE SENSOR INCORPORATING AN ARRAY OF OPTICALLY SWITCHABLE MAGNETIC TUNNEL JUNCTIONS 有权

    公开(公告)号：US20210404867A1

    公开(公告)日：2021-12-30

    申请号：US16911950

    申请日：2020-06-25

    Applicant: GLOBALFOUNDRIES U.S. Inc.

    Inventor： Akhilesh R. Jaiswal ,  Ajey Poovannummoottil Jacob ,  Yusheng Bian ,  David C. Pritchard

    IPC: G01J1/44 ,  H01L27/22 ,  H01L43/04 ,  H01L43/06 ,  H04N5/374 ,  H04N5/359

    Abstract: An image sensor includes an array of optically switchable magnetic tunnel junctions (MTJs) arranged in columns and rows. The image sensor has first lines of transparent conductive material and second lines of conductive material. Each first line is in contact with the free layers of the MTJs in a corresponding row. Each second line is electrically connected to the fixed layers MTJs in a corresponding column. The first lines are concurrently exposable to radiation. The first and second lines are selectively biasable. In a global reset operation, biasing conditions are such that all MTJs are switched to an anti-parallel state. In a global sense operation, biasing conditions are such that, depending upon the intensity of radiation received at those portions of the first lines in contact with MTJs, the MTJs may switch to a parallel state. In selective read operations, biasing conditions are such that stored data values in the MTJs can be read.

    Fin-based photodetector structure
    57.
    发明授权
    Fin-based photodetector structure 有权

    公开(公告)号：US11177404B2

    公开(公告)日：2021-11-16

    申请号：US16740719

    申请日：2020-01-13

    Applicant: GLOBALFOUNDRIES U.S. Inc.

    Inventor： Ajey Poovannummoottil Jacob ,  Yusheng Bian ,  Steven Shank

    IPC: H01L31/0352 ,  H01L31/0232 ,  H01L31/18 ,  H01L31/028 ,  H01L31/103

    Abstract: A photodetector disclosed herein includes an N-doped waveguide structure defined in a semiconductor material, wherein the N-doped waveguide structure comprises a plurality of first fins. Each adjacent pair of the plurality of first fins is separated by a trench formed in the semiconductor material. The photodetector also includes a detector structure positioned on the N-doped waveguide structure, wherein a portion of the detector structure is positioned laterally between the plurality of first fins. The detector structure comprises a single crystal semiconductor material. The photodetector also includes a first diffusion region that extends from the bottom surface of the trench into the semiconductor material, wherein the first diffusion region comprises atoms of the single crystal semiconductor material of the detector structure.

    Laser with a gain medium layer doped with a rare earth metal with upper and lower light-confining features
    59.
    发明授权
    Laser with a gain medium layer doped with a rare earth metal with upper and lower light-confining features 有权

    公开(公告)号：US11088503B2

    公开(公告)日：2021-08-10

    申请号：US16525878

    申请日：2019-07-30

    Applicant: GLOBALFOUNDRIES U.S. Inc.

    Inventor： Yusheng Bian ,  Ajey Poovannummoottil Jacob

    IPC: H01S3/16 ,  H01S3/063

    Abstract: One illustrative laser disclosed herein includes a gain medium layer having a first width in a transverse direction that is orthogonal to a laser emitting direction of the laser, and an upper light-confining structure positioned above an upper surface of the gain medium layer, wherein the upper light-confining structure has a second width in the transverse direction that is equal to or less than the first width and comprises at least one material having an index of refraction that is at least 2.0. The laser also includes a lower light-confining structure positioned below a lower surface of the gain medium layer, wherein the lower light-confining structure has a third width in the transverse direction that is equal to or less than the first width and comprises at least one material having an index of refraction that is at least 2.0.

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