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公开(公告)号：US11550200B2
公开(公告)日：2023-01-10
申请号：US16808613
申请日：2020-03-04
IPC分类号： G02F1/313
摘要： One illustrative device disclosed herein includes a lower waveguide structure and an upper body structure positioned above at least a portion of the lower waveguide structure. In this example, the device also includes a grating structure positioned in the upper body structure, wherein the grating structure comprises a plurality of grating elements that comprise a tunable material whose index of refraction may be changed by application of energy to the tunable material.
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2.发明授权公开(公告)号：US11381053B2
公开(公告)日：2022-07-05
申请号：US16718329
申请日：2019-12-18
摘要： Embodiments of the disclosure provide a waveguide-confining layer, a photonic integrated circuit (PIC) die with embodiments of a waveguide-confining layer, and methods to form the same. The waveguide-confining layer may include an oxide layer over a buried insulator layer, a silicon-based optical confinement structure embedded within or positioned on the oxide layer, and first and second blocking layers over the oxide layer and separated from each other by a horizontal slot. The first and second blocking layers include a metal or an oxide. A gain medium is positioned on the oxide layer and within the horizontal slot between the first and second blocking layers, and has a lower refractive index than each of the first and second blocking layers. The gain medium is vertically aligned with the silicon-based optical confinement structure, and a portion of the oxide layer separates the gain medium from the silicon-based optical confinement structure.
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公开(公告)号：US11374143B2
公开(公告)日：2022-06-28
申请号：US16740664
申请日：2020-01-13
IPC分类号： H01L31/103 , G02B6/13 , H01L31/0392 , G02B6/12
摘要： One illustrative photodetector disclosed herein includes an N-doped waveguide structure defined in a semiconductor material, the N-doped waveguide structure comprising a plurality of first fins, and a detector structure positioned on the N-doped waveguide structure, wherein a portion of the detector structure is positioned laterally between the plurality of first fins. In this example, the photodetector also includes at least one N-doped contact region positioned in the semiconductor material and a P-doped contact region positioned in the detector structure.
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公开(公告)号：US11275207B2
公开(公告)日：2022-03-15
申请号：US16989214
申请日：2020-08-10
摘要： Structures for a waveguide bend and methods of fabricating a structure for a waveguide bend. A waveguide core has a first section, a second section, and a waveguide bend connecting the first section with the second section. The waveguide core includes a first side surface extending about an inner radius of the waveguide bend and a second side surface extending about an outer radius of the waveguide bend. A curved strip is arranged over the waveguide bend adjacent to the first side surface or the second side surface.
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公开(公告)号：US11239633B2
公开(公告)日：2022-02-01
申请号：US16794330
申请日：2020-02-19
IPC分类号： H01S5/042 , H03K7/02 , G02F1/03 , H04L25/49 , H03K19/00 , H03K19/0175 , H03K19/0185 , H04L25/03
摘要： A driver circuit includes digital inputs, such as a first digital input and a second digital input. The digital inputs receive voltages at either a digital high-voltage or a digital low-voltage. The driver circuit has a clock input, an analog output, a first differential pair of transistors connected to the analog output, second differential pairs of transistors connected to the analog output, and voltage limiters connected to the clock input and the second differential pairs of transistors. The voltage limiters supply different voltages to the second differential pairs of transistors, which results in the second differential pairs of transistors providing analog signals to the analog output that are at different voltage steps at, and between, the digital high-voltage and the digital low-voltage.
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公开(公告)号：US11226231B1
公开(公告)日：2022-01-18
申请号：US16911950
申请日：2020-06-25
摘要： An image sensor includes an array of optically switchable magnetic tunnel junctions (MTJs) arranged in columns and rows. The image sensor has first lines of transparent conductive material and second lines of conductive material. Each first line is in contact with the free layers of the MTJs in a corresponding row. Each second line is electrically connected to the fixed layers MTJs in a corresponding column. The first lines are concurrently exposable to radiation. The first and second lines are selectively biasable. In a global reset operation, biasing conditions are such that all MTJs are switched to an anti-parallel state. In a global sense operation, biasing conditions are such that, depending upon the intensity of radiation received at those portions of the first lines in contact with MTJs, the MTJs may switch to a parallel state. In selective read operations, biasing conditions are such that stored data values in the MTJs can be read.
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公开(公告)号：US11163114B2
公开(公告)日：2021-11-02
申请号：US16549466
申请日：2019-08-23
摘要： The present disclosure relates to semiconductor structures and, more particularly, to waveguide structures with metamaterial structures and methods of manufacture. The structure includes: at least one waveguide structure; and metamaterial structures separated from the at least one waveguide structure by an insulator material, the metamaterial structures being structured to decouple the at least one waveguide structure to simultaneously reduce insertion loss and crosstalk of the at least one waveguide structure.
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公开(公告)号：US11145348B1
公开(公告)日：2021-10-12
申请号：US16871129
申请日：2020-05-11
摘要： The disclosure provides a circuit structure and method for memory storage using a memory cell and magnetic random access memory (MRAM) stack. A circuit structure includes a memory cell having a first latch configured to store a digital bit, a first diode coupled to the first latch, and a first magnetic random access memory (MRAM) stack coupled to the first latch of the memory cell through the first diode. The first MRAM stack includes a first layer and a second layer each having a respective magnetic moment. The magnetic moment of the second layer is adjustable between a parallel orientation and an antiparallel orientation with respect to the magnetic moment of the first layer. Further, the magnetic anisotropy of the second layer can be modified through application of an applied voltage (VCMA effect). A spin Hall electrode is directly coupled to the first MRAM stack.
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公开(公告)号：US20210305290A1
公开(公告)日：2021-09-30
申请号：US16829553
申请日：2020-03-25
IPC分类号： H01L27/146 , H01L31/0232 , H01L31/101
摘要： Structures for a photodetector and methods of fabricating a structure for a photodetector. The structure includes a light-absorbing region having a side edge, an anode adjacent to the side edge of the light-absorbing region, and a cathode adjacent to the side edge of the light-absorbing region.
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公开(公告)号：US20210302651A1
公开(公告)日：2021-09-30
申请号：US16836047
申请日：2020-03-31
摘要： Structures for a polarizer and methods of fabricating a structure for a polarizer. A waveguide crossing includes a first arm and a second arm. A waveguide loop couples the first arm of the waveguide crossing to the second arm of the waveguide crossing. The waveguide crossing and the waveguide loop provide a structure for the polarizer.
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