公开(公告)号：US07390611B2

公开(公告)日：2008-06-24

申请号：US11265734

申请日：2005-11-02

Applicant: Geun Su Lee

Inventor： Geun Su Lee

IPC: G03C1/76 ,  G03C1/492 ,  G03C1/494 ,  G03C5/00

CPC classification number: G03F7/40

Abstract: A photoresist coating composition that includes a compound represented by Formula 1 and an aqueous solvent, and a method for forming a fine pattern by coating the composition on a photoresist pattern to effectively reduce a size of a photoresist contact hole and a space, which can be applied to all of the semiconductor processes.

Abstract translation: 包括由式1表示的化合物和水性溶剂的光致抗蚀剂涂料组合物，以及通过在光致抗蚀剂图案上涂覆该组合物以有效地减小光致抗蚀剂接触孔的尺寸和空间来形成精细图案的方法，其可以 适用于所有的半导体工艺。

公开(公告)号：US07364837B2

公开(公告)日：2008-04-29

申请号：US11835082

申请日：2007-08-07

Applicant: Won Wook Lee ,  Geun Su Lee ,  Sam Young Kim

Inventor： Won Wook Lee ,  Geun Su Lee ,  Sam Young Kim

IPC: G03F7/00 ,  G03F7/38

CPC classification number: G03F7/38 ,  G03F7/168

Abstract: Photoresist cleaning solutions are used to clean semiconductor substrates before or after an exposing step when photoresist patterns are formed. The cleaning solutions include H2O and a nonionic surfactant compound represented by Formula 1. By spraying the disclosed cleaning solutions on a surface of the semiconductor substrate before or after exposing step to form a photoresist pattern, the desired pattern only is obtained and unnecessary patterns generated in undesired regions by ghost images are avoided as excess acid generated by the photoacid generator is neutralized and removed and damage to unexposed portions of the photoresist polymer is avoided. wherein R1 and R2 are independently H, C1-C20 alkyl, C5-C25 alkyl aryl or C1-C10 ester; m is 1 or 2; n is an integer ranging from 10 to 300; and o is 0 or 1.

Abstract translation: 当形成光致抗蚀剂图案时，光刻胶清洁溶液用于在曝光步骤之前或之后清洁半导体衬底。 清洗溶液包括H 2 O 2和由式1表示的非离子表面活性剂化合物。通过在暴露步骤之前或之后将所公开的清洁溶液喷涂在半导体衬底的表面上以形成光致抗蚀剂图案，所需的 避免了图案，并且避免了由不想要的区域产生的重影图像产生的不必要的图案，因为光致酸发生器产生的过量酸被中和和去除，并且避免了光致抗蚀剂聚合物的未曝光部分的损坏。 其中R 1和R 2独立地为H，C 1 -C 20烷基，C 5 烷基芳基或C 1 -C 10烷基酯; C 1 -C 15烷基芳基或C 1 -C 10烷基酯; m为1或2; n为10〜300的整数。 o为0或1。

公开(公告)号：US20070154838A1

公开(公告)日：2007-07-05

申请号：US11421897

申请日：2006-06-02

Applicant: Geun Su Lee

Inventor： Geun Su Lee

IPC: G03C1/00

CPC classification number: G03F7/0752 ,  G03F7/11

Abstract: Disclosed herein is a cross-linking polymer that includes a silicon compound and a hydroxyl compound. Also disclosed herein is a composition that includes the cross-linking polymer and an organic solvent. The composition can be used as a part of hard mask film applied over an underlying layer during the manufacture of a semiconductor device. The hard mask film is useful in the formation of a uniform pattern on the device.

Abstract translation: 本文公开了包含硅化合物和羟基化合物的交联聚合物。 本文还公开了包含交联聚合物和有机溶剂的组合物。 该组合物可用作在制造半导体器件期间施加在下层上的硬掩模膜的一部分。 硬掩模膜在器件上形成均匀图案是有用的。

公开(公告)号：US07238653B2

公开(公告)日：2007-07-03

申请号：US10723029

申请日：2003-11-26

Applicant: Geun Su Lee ,  Cheol Kyu Bok ,  Young Sun Hwang ,  Sung Koo Lee ,  Seung Chan Moon ,  Ki Soo Shin

Inventor： Geun Su Lee ,  Cheol Kyu Bok ,  Young Sun Hwang ,  Sung Koo Lee ,  Seung Chan Moon ,  Ki Soo Shin

IPC: C11D1/72

CPC classification number: G03F7/322 ,  C11D1/345 ,  C11D3/30 ,  C11D11/0047

Abstract: Cleaning solutions for photoresist are disclosed which are useful for cleaning a semiconductor substrate in the last step of development when photoresist patterns are formed. Also, methods for forming photoresist patterns using the same are disclosed. The disclosed cleaning solution comprises H2O as a solution, a surfactant which is phosphate-alcoholamine salt represented by Formula 1, and an alcohol compound. The disclosed cleaning solution has lower surface tension than that of distilled water which has been used for conventional cleaning solutions, thereby improving resistance to photoresist pattern collapse and stabilizing the photoresist pattern formation. wherein R, x, y, z, a and b are as defined in the specification.

Abstract translation: 公开了用于光致抗蚀剂的清洁溶液，其在形成光致抗蚀剂图案时在开发的最后步骤中用于清洁半导体衬底。 此外，公开了使用其形成光致抗蚀剂图案的方法。 所公开的洗涤溶液包含作为溶液的H 2 O 2，作为由式1表示的磷酸 - 醇胺盐的表面活性剂和醇化合物。 所公开的清洗溶液具有比用于常规清洁溶液的蒸馏水低的表面张力，从而提高抗光刻胶图案的崩溃和稳定光致抗蚀剂图案形成。 其中R，x，y，z，a和b如说明书中所定义。

公开(公告)号：US07033732B2

公开(公告)日：2006-04-25

申请号：US10903076

申请日：2004-07-30

Applicant: Geun Su Lee

Inventor： Geun Su Lee

IPC: G03C1/76 ,  C08G79/02

CPC classification number: C08F230/02 ,  C08F216/06 ,  G03F7/091

Abstract: Disclosed are an organic anti-reflective coating polymer having a structure represented by the following formula I which is introduced to the top portion of photoresist, its preparation method and an anti-reflective coating composition, in a process for forming ultra-fine patterns of photoresist for photolithography by using 193 nm ArF or 157 nm VUV light source. More particularly, the present invention provides an organic anti-reflective coating polymer capable of protecting a photoresist from amine to improve the stability of a post exposure delay and to minimize pattern distortion caused by a swing phenomenon during a patterning process, its preparation method and an anti-reflective coating composition comprising the same. [formula I] wherein each of m and n is an integer ranging from 5 to 5,000.

Abstract translation: 公开了一种有机抗反射涂层聚合物，其具有由下式I表示的结构，其被引入到光致抗蚀剂的顶部，其制备方法和抗反射涂层组合物，用于形成光致抗蚀剂超细图案的工艺 用于通过使用193nm ArF或157nm VUV光源进行光刻。 更具体地说，本发明提供了一种能够保护光致抗蚀剂不受胺的有机抗反射涂层聚合物，以提高后曝光延迟的稳定性，并且使图案化过程中由摆动现象引起的图案变形最小化，其制备方法和 抗反射涂料组合物。 [式I]其中m和n各自为5至5,000的整数。

公开(公告)号：US07011924B2

公开(公告)日：2006-03-14

申请号：US10865731

申请日：2004-06-10

Applicant: Geun Su Lee

Inventor： Geun Su Lee

IPC: G03F7/004

CPC classification number: G03F7/0395 ,  G03F7/0046

Abstract: Photoresist polymers and photoresist compositions containing the same are disclosed that comprise a chain linking compound including an alcohol group and a boron compound represented by Formula 1 as a moiety. As a result, the photoresist polymer and the photoresist composition containing the same have excellent transmissivity, etching resistance, thermal resistance and adhesive property, low light absorbance and high affinity to an developing solution at a wavelength of 13 nm as well as 248 nm and 157 nm, thereby reducing line edge roughness (LER). wherein R1, R2, R3, R4 and R5 are as defined in the specification.

Abstract translation: 公开了含有它们的光致抗蚀剂聚合物和光致抗蚀剂组合物，其包含链烷基化合物，其包括醇基和由式1表示的硼化合物作为部分。 结果，含有该光致抗蚀剂的光致抗蚀剂聚合物和含有该光致抗蚀剂的光致抗蚀剂组合物具有优异的透光率，耐蚀刻性，耐热性和粘合性，低的吸光度和对于在波长13nm以及248nm和157的显影溶液的高亲和力 nm，从而减少线边缘粗糙度（LER）。 其中R 1，R 2，R 3，R 4和R 5， 如说明书中所定义。

公开(公告)号：US06984482B2

公开(公告)日：2006-01-10

申请号：US10174497

申请日：2002-06-17

Applicant: Jae Chang Jung ,  Keun Kyu Kong ,  Hyeong Soo Kim ,  Jin Soo Kim ,  Cha Won Koh ,  Sung Eun Hong ,  Geun Su Lee ,  Min Ho Jung ,  Ki Ho Baik

Inventor： Jae Chang Jung ,  Keun Kyu Kong ,  Hyeong Soo Kim ,  Jin Soo Kim ,  Cha Won Koh ,  Sung Eun Hong ,  Geun Su Lee ,  Min Ho Jung ,  Ki Ho Baik

IPC: G03F7/11 ,  G03F7/09 ,  G03F7/00

CPC classification number: G03F7/11 ,  G03F7/0045

Abstract: The present invention provides an over-coating composition comprising a basic compound for coating a photoresist composition to provide a vertical photoresist pattern.

Abstract translation: 本发明提供一种包覆组合物，其包含用于涂覆光致抗蚀剂组合物以提供垂直光致抗蚀剂图案的碱性化合物。

公开(公告)号：US06858371B2

公开(公告)日：2005-02-22

申请号：US10080335

申请日：2002-02-21

Applicant: Geun Su Lee ,  Jae Chang Jung ,  Min Ho Jung ,  Cha Won Koh ,  Ki Soo Shin

Inventor： Geun Su Lee ,  Jae Chang Jung ,  Min Ho Jung ,  Cha Won Koh ,  Ki Soo Shin

IPC: G03F7/033 ,  C08F210/04 ,  C08F220/10 ,  C08F222/40 ,  C08F232/08 ,  G03F7/004 ,  G03F7/039 ,  H01L21/027 ,  C08F26/06

CPC classification number: G03F7/0046 ,  G03F7/0395 ,  Y10S430/106 ,  Y10S430/108

Abstract: Photoresist monomers, photoresist polymers prepared thereof, and photoresist compositions using the polymer are disclosed. More specifically, photoresist polymers comprising maleimide monomer represented by Formula 1, and a composition comprising the polymer thereof are disclosed. The photoresist composition has excellent etching resistance, heat resistance and adhesiveness, and can be developed in an aqueous tetramethylammonium hydroxide (TMAH) solution. As the composition has low light absorbance at 193 nm and 157 nm wavelength, and it is suitable for a process using ultraviolet light source such as VUV (157 nm) wherein, X1, X2, R1, R2 and R3 are defined in the specification.

Abstract translation: 公开了光致抗蚀剂单体，其制备的光致抗蚀剂聚合物和使用该聚合物的光致抗蚀剂组合物。 更具体地，公开了包含由式1表示的马来酰亚胺单体的光致抗蚀剂聚合物和包含其聚合物的组合物。 光致抗蚀剂组合物具有优异的耐蚀刻性，耐热性和粘合性，并且可以在四甲基氢氧化铵（TMAH）水溶液中显影。 由于组合物在193nm和157nm波长处具有低吸光度，并且适用于使用紫外光源如VUV（157nm）的方法，其中X1，X2，R1，R2和R3在本说明书中定义。

公开(公告)号：US06770414B2

公开(公告)日：2004-08-03

申请号：US09878803

申请日：2001-06-11

Applicant: Min Ho Jung ,  Sung Eun Hong ,  Jae Chang Jung ,  Geun Su Lee ,  Ki Ho Baik

Inventor： Min Ho Jung ,  Sung Eun Hong ,  Jae Chang Jung ,  Geun Su Lee ,  Ki Ho Baik

IPC: G03F700

CPC classification number: G03F7/0395 ,  C07J9/00 ,  G03F7/0045 ,  Y10S430/106 ,  Y10S430/111 ,  Y10S430/115 ,  Y10T428/24802

Abstract: The present invention provides an additive for a photoresist composition for a resist flow process. A compound of following Formula 1 having low glass transition temperature is added to a photoresist composition containing a polymer which is not suitable for the resist flow process due to its high glass transition temperature, thus improving a flow property of the photoresist composition. As a result, the photoresist composition comprising an additive of Formula 1 can be used for the resist flow process. wherein, A, B, R and R′ are as defined in the specification of the invention.

Abstract translation: 本发明提供了用于抗蚀剂流动方法的光致抗蚀剂组合物的添加剂。 将具有低玻璃化转变温度的下述式1化合物加入含有聚合物的光致抗蚀剂组合物中，该聚合物由于其玻璃化转变温度高而不适于抗蚀剂流动过程，从而改善光致抗蚀剂组合物的流动性能。 结果，包含式1的添加剂的光致抗蚀剂组合物可用于抗蚀剂流动过程。其中A，B，R和R'如本发明的说明书中所定义。

公开(公告)号：US06753128B2

公开(公告)日：2004-06-22

申请号：US10272072

申请日：2002-10-16

Applicant: Geun Su Lee ,  Jae Chang Jung ,  Ki Soo Shin

Inventor： Geun Su Lee ,  Jae Chang Jung ,  Ki Soo Shin

IPC: G03F7038

CPC classification number: G03F7/0045 ,  G03F7/0395

Abstract: Photoresist additives for preventing the acid generated in the exposed area during the course of a photolithography process from being diffused to the unexposed area, photoresist compositions containing the same, and a process for forming a photoresist pattern using the same. Photoresist compositions comprising the disclosed additive can prevent acid diffusion effectively even if the additive is used in low concentrations, thereby improving LER, resulting in excellent profiles and lowering optimum irradiation energies. wherein, R1, R2, R3, R4 and k are as defined herein.

Abstract translation: 用于防止在光刻工艺过程中在曝光区域产生的酸扩散到未曝光区域的光刻胶添加剂，含有该光致抗蚀剂组合物的光致抗蚀剂组合物和使用其形成光致抗蚀剂图案的方法。 包含所公开的添加剂的光致抗蚀剂组合物即使以低浓度使用添加剂也能有效地防止酸扩散，从而改善LER，导致优异的轮廓并降低最佳照射能量。其中R1，R2，R3，R4和k如本文所定义 。