公开(公告)号：US10651942B2

公开(公告)日：2020-05-12

申请号：US16275727

申请日：2019-02-14

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Cheng Li ,  Jim Huang ,  Ashkan Seyedi ,  Marco Fiorentino ,  Raymond G. Beausoleil

IPC: H04B10/00 ,  H04B10/50 ,  G02F1/225 ,  G02F1/01 ,  G02F1/21

Abstract: One example includes a bias-based Mach-Zehnder modulation (MZM) system. The system includes a Mach-Zehnder modulator to receive and split an optical input signal and to provide an intensity-modulated optical output signal based on a high-frequency data signal to modulate a relative phase of the split optical input signal to transmit data and based on a bias voltage to modulate the relative phase of the split optical input signal to tune the Mach-Zehnder modulator. The system also includes a bias feedback controller to compare a detection voltage associated with the intensity-modulated output signal with a reference voltage to measure an extinction ratio associated with an optical power of the intensity-modulated optical output signal and to adjust the bias voltage based on the comparison to substantially maximize the extinction ratio.

公开(公告)号：US20200067274A1

公开(公告)日：2020-02-27

申请号：US16108399

申请日：2018-08-22

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Geza Kurczveil ,  Chong Zhang ,  Di Liang ,  Raymond G. Beausoleil

IPC: H01S5/10 ,  H01S5/50 ,  H01S5/022 ,  H01S5/343 ,  H01S5/065 ,  H01S5/14 ,  H01S5/34

Abstract: A quantum dot comb laser includes a body defining a lasing cavity and an extension defining an external cavity, the FSR of the lasing cavity being an inverse of an integer multiple of the FSR of the external cavity.

公开(公告)号：US20200057198A1

公开(公告)日：2020-02-20

申请号：US16666053

申请日：2019-10-28

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Di Liang ,  Geza Kurczveil ,  Raymond G. Beausoleil

IPC: G02B6/122 ,  G02B6/124 ,  G02B5/18 ,  G02B6/13 ,  G02B6/12 ,  H01S5/02 ,  H01S5/20 ,  H01S5/10 ,  H01S3/23 ,  H01S3/063

Abstract: A hybrid grating comprises a first grating layer composed of a first solid-state material, and a second grating layer over the first grating layer and composed of a second solid-state material, the second solid state-material being different than the first solid-state material and having a monocrystalline structure.

公开(公告)号：US20190317286A1

公开(公告)日：2019-10-17

申请号：US15953765

申请日：2018-04-16

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Mir Ashkan Seyedi ,  Marco Fiorentino ,  Geza Kurczveil ,  Raymond G. Beausoleil

IPC: G02B6/43 ,  H01S3/13 ,  H01S3/131 ,  H01S3/23 ,  G02B6/42

Abstract: A photonic integrated circuit package includes two arrays or sets of integrated comb laser modules that are bonded to a silicon interposer. Each comb laser of an array has a common or overlapping spectral range, with each laser in the array being optically coupled to a local optical bus. The effective spectral range of the lasers in each array are different, or distinct, as to each array. An optical coupler is disposed within the silicon interposer and is optically coupled to each of the local optical buses. An ASIC (application specific integrated circuit) is bonded to the silicon interposer and provides control and operation of the comb laser modules.

公开(公告)号：US10431707B2

公开(公告)日：2019-10-01

申请号：US15560649

申请日：2015-04-30

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Cheng Li ,  Zhihong Huang ,  Marco Fiorentino ,  Raymond G. Beausoleil

IPC: H01L31/10 ,  H01L31/107 ,  H04B10/00 ,  H01L25/04 ,  H01L27/146 ,  H04B10/69

Abstract: An example device in accordance with an aspect of the present disclosure includes an avalanche photodetector to enable carrier multiplication for increased responsivity, and a receiver based on source-synchronous CMOS and including adaptive equalization. The photodetector and receiver are monolithically integrated on a single chip.

公开(公告)号：US20190190610A1

公开(公告)日：2019-06-20

申请号：US16275727

申请日：2019-02-14

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Cheng Li ,  Jim Huang ,  Ashkan Seyedi ,  Marco Fiorentino ,  Raymond G. Beausoleil

IPC: H04B10/50 ,  G02F1/01 ,  G02F1/225

CPC classification number: H04B10/503 ,  G02F1/0102 ,  G02F1/0123 ,  G02F1/225 ,  G02F2001/212

Abstract: One example includes a bias-based Mach-Zehnder modulation (MZM) system. The system includes a Mach-Zehnder modulator to receive and split an optical input signal and to provide an intensity-modulated optical output signal based on a high-frequency data signal to modulate a relative phase of the split optical input signal to transmit data and based on a bias voltage to modulate the relative phase of the split optical input signal to tune the Mach-Zehnder modulator. The system also includes a bias feedback controller to compare a detection voltage associated with the intensity-modulated output signal with a reference voltage to measure an extinction ratio associated with an optical power of the intensity-modulated optical output signal and to adjust the bias voltage based on the comparison to substantially maximize the extinction ratio.

公开(公告)号：US20190089466A1

公开(公告)日：2019-03-21

申请号：US16085364

申请日：2016-04-14

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Cheng Li ,  Kunzhi Yu ,  Marco Fiorentino ,  Raymond G. Beausoleil

IPC: H04B10/69 ,  H04B10/63 ,  H04B10/516 ,  H04L25/49

CPC classification number: H04B10/6931 ,  H04B10/5161 ,  H04B10/63 ,  H04B10/695 ,  H04L25/4917

Abstract: An example optical receiver may have an optical receiver front-end, four slicers, and a logic block. The optical receiver front-end may include a transimpedance amplifier to convert a photodiode output signal to a voltage signal. Three of the slicers may be data slicers, and one of the slicers may be an edge slicer. The slicers may each: shift the voltage signal based on an offset voltage set for the respective slicer, determine whether the shifted voltage signal is greater than a threshold value and generate a number of comparison signals based on the determining, and generate multiple digital signals by demuxing the comparison signals. The logic block may perform PAM-4 to binary decoding based on the data signals output by the data slicers and clock-and-data-recovery based on the digital signals output by the edge slicer.

公开(公告)号：US10209445B2

公开(公告)日：2019-02-19

申请号：US15976944

申请日：2018-05-11

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Di Liang ,  David A. Fattal ,  Marco Florentino ,  Zhen Peng ,  Charles M. Santori ,  Raymond G. Beausoleil

IPC: G02B6/34 ,  G02B6/122 ,  H01S5/10 ,  B82Y20/00 ,  G02B6/125 ,  H01S5/125 ,  G02B6/12 ,  H01S5/12

Abstract: Compact photonics platforms and methods of forming the same are provided. An example of a compact photonics platform includes a layered structure having an active region along a longitudinal axis, a facet having an angle no less than a critical angle formed at at least one longitudinal end of the active region, and a waveguide having at least one grating coupler positioned in alignment with the angled facet to couple light out to or in from the waveguide.

公开(公告)号：US20180294622A1

公开(公告)日：2018-10-11

申请号：US15483678

申请日：2017-04-10

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Geza Kurczveil ,  Di Liang ,  Raymond G. Beausoleil

IPC: H01S5/30 ,  H01S5/02 ,  H01S5/026 ,  H01S5/068 ,  H01S5/065 ,  H01S5/10

Abstract: Examples disclosed herein relate to multi-wavelength semiconductor comb lasers. In some examples disclosed herein, a multi-wavelength semiconductor comb laser may include a waveguide included in an upper silicon layer of a silicon-on-insulator (SOI) substrate. The comb laser may include a quantum dot (QD) active gain region above the SOI substrate defining an active section in a laser cavity of the comb laser and a dispersion tuning section included in the laser cavity to tune total cavity dispersion of the comb laser.

公开(公告)号：US20180261978A1

公开(公告)日：2018-09-13

申请号：US15335909

申请日：2016-10-27

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Geza Kurczveil ,  Di Liang ,  Raymond G. Beausoleil

IPC: H01S5/10 ,  H01S5/02 ,  H01S5/34 ,  H01S5/065 ,  H01S5/06 ,  H01S5/50 ,  H01S5/068

Abstract: Examples disclosed herein relate to multi-wavelength semiconductor lasers. In some examples disclosed herein, a multi-wavelength semiconductor laser may include a silicon-on-insulator (SOI) substrate and a quantum dot (QD) layer above the SOI substrate. The QD layer may include and active gain region and may have at least one angled junction at one end of the QD layer. The SOI substrate may include a waveguide in an upper silicon layer and a mode converter to facilitate optical coupling of a lasing mode to the waveguide.