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    Method of manufacturing an amplifying solid-state imaging device
    51.
    发明授权
    Method of manufacturing an amplifying solid-state imaging device 失效
    制造放大固态成像装置的方法

    公开(公告)号：US5869352A

    公开(公告)日：1999-02-09

    申请号：US926646

    申请日：1997-09-10

    Applicant: Yasushi Maruyama ,  Hideshi Abe ,  Kazuya Yonemoto ,  Takahisa Ueno ,  Junji Yamane

    Inventor： Yasushi Maruyama ,  Hideshi Abe ,  Kazuya Yonemoto ,  Takahisa Ueno ,  Junji Yamane

    IPC: H01L27/08 ,  H01L27/146 ,  H01L31/0352 ,  H04N5/335 ,  H04N5/355 ,  H04N5/359 ,  H04N5/369 ,  H04N5/372 ,  H04N5/3745 ,  H04N5/378 ,  H01L31/18

    CPC classification number: H01L27/14654 ,  H01L27/14609 ,  H01L27/14689 ,  H01L31/035236

    Abstract: In an amplifying type solid-state imaging device having a pixel MOS transistor, the occurrence of blooming can be suppressed and an amount of signal charges can be increased. A second conductivity-type overflow-barrier region (23) and a first conductivity-type semiconductor region (24) are sequentially formed on a first conductivity-type semiconductor substrate (22). A pixel MOS transistor (29) comprising a source region (27), a drain region (28) and a gate portion (26) is formed on the first conductivity-type semiconductor region (24), and a second conductivity-type channel stopper region (41) for signal charges accumulated in the first conductivity-type semiconductor region (24) of the gate portion (26) is formed within the first conductivity-type semiconductor region (24) formed just below the drain region (28).

    Abstract translation: 在具有像素MOS晶体管的放大型固态成像器件中，可以抑制发光，并且可以增加信号电荷量。 在第一导电型半导体衬底（22）上依次形成第二导电型溢出阻挡区（23）和第一导电型半导体区（24）。 在第一导电型半导体区域（24）上形成包括源极区域（27），漏极区域（28）和栅极部分（26）的像素MOS晶体管（29），第二导电型沟道阻挡层 在栅极部分（26）的第一导电型半导体区域（24）中累积的信号电荷的区域（41）形成在形成在漏区（28）正下方的第一导电类型半导体区域（24）内。

    Solid-state imaging device and method for manufacturing the same
    52.
    发明授权
    Solid-state imaging device and method for manufacturing the same 有权
    固态成像装置及其制造方法

    公开(公告)号：US08993369B2

    公开(公告)日：2015-03-31

    申请号：US13181630

    申请日：2011-07-13

    Applicant: Yasushi Maruyama ,  Hideshi Abe ,  Hiroyuki Mori

    Inventor： Yasushi Maruyama ,  Hideshi Abe ,  Hiroyuki Mori

    IPC: H01L21/00 ,  H01L27/146

    CPC classification number: H01L27/14645 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14658 ,  H01L27/14683 ,  H01L27/14685 ,  H01L27/14689

    Abstract: A method for manufacturing a solid-state imaging device in which: photo sensor portions are formed in a silicon layer over a substrate, a first conductivity type region being included in the photo sensor portions and a second conductivity type region being formed in the silicon layer implanted from a rear-surface of the solid-state imaging device by ion implantation; a wiring portion is formed above the silicon layer; and a supporting substrate is bonded to the wiring portion, wherein, the solid-state imaging device is configured for receiving incident light via the rear-surface of the solid-state imaging device.

    Abstract translation: 一种固体摄像装置的制造方法，其特征在于，在基板上形成有硅传感器部，在所述光传感器部中包含第一导电型区域，在所述硅层中形成第二导电型区域 通过离子注入从固态成像装置的后表面注入; 在硅层上形成配线部分; 并且支撑基板被接合到布线部分，其中，固态成像装置被配置为经由固态成像装置的后表面接收入射光。

    Solid state image device having multiple PN junctions in a depth direction, each of which provides an output signal
    54.
    发明授权
    Solid state image device having multiple PN junctions in a depth direction, each of which provides an output signal 有权
    固态图像装置在深度方向具有多个PN结，每个PN结提供输出信号

    公开(公告)号：US08253830B2

    公开(公告)日：2012-08-28

    申请号：US12771925

    申请日：2010-04-30

    Applicant: Hiroki Endo ,  Hideshi Abe

    Inventor： Hiroki Endo ,  Hideshi Abe

    IPC: H04N9/083 ,  H04N5/335 ,  H01L31/00 ,  H01L27/00 ,  H01L31/062

    CPC classification number: H01L27/14627 ,  H01L27/14621 ,  H01L27/14647 ,  H04N9/045 ,  H04N2209/045

    Abstract: A solid-state image device is provided which has a semiconductor substrate, pixels A each containing a photoelectric conversion portion in which at least two PN junction parts are provide in a depth direction of the semiconductor substrate, pixels B each containing a photoelectric conversion portion in which at least one PN junction part is provided, first color filters provided above the pixels A, second color filters provided above the pixels B; and a detection mechanism for detecting a first color signal and a second color signal from the two PN junction parts of each of the pixels A and a third color signal from the PN junction part of each of the pixels B. According to the above solid-state image device, light can be more efficiently used than a color filter separation method, and superior color reproducibility to that of a three-well structure can be realized.

    Abstract translation: 提供一种具有半导体衬底的固态图像器件，每个像素A包含其中在半导体衬底的深度方向上提供至少两个PN结部分的光电转换部分，每个像素B包含光电转换部分 提供至少一个PN结部分，设置在像素A上方的第一滤色器，设置在像素B上方的第二滤色器; 以及用于从每个像素A的两个PN结部分检测第一颜色信号和第二颜色信号的检测机构，以及来自每个像素B的PN结部分的第三颜色信号。根据上述固体 - 可以比滤色器分离方法更有效地使用光，并且可以实现与三孔结构的颜色再现性优异的颜色再现性。

    SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THE SAME
    55.
    发明申请
    SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    固态成像装置及其制造方法

    公开(公告)号：US20110269258A1

    公开(公告)日：2011-11-03

    申请号：US13181630

    申请日：2011-07-13

    Applicant: Yasushi Maruyama ,  Hideshi Abe ,  Hiroyuki Mori

    Inventor： Yasushi Maruyama ,  Hideshi Abe ,  Hiroyuki Mori

    IPC: H01L31/18

    CPC classification number: H01L27/14645 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14658 ,  H01L27/14683 ,  H01L27/14685 ,  H01L27/14689

    Abstract: A method for manufacturing a solid-state imaging device in which: photo sensor portions are formed in a silicon layer over a substrate, a first conductivity type region being included in the photo sensor portions and a second conductivity type region being formed in the silicon layer implanted from a rear-surface of the solid-state imaging device by ion implantation; a wiring portion is formed above the silicon layer; and a supporting substrate is bonded to the wiring portion, wherein, the solid-state imaging device is configured for receiving incident light via the rear-surface of the solid-state imaging device.

    Abstract translation: 一种固体摄像装置的制造方法，其特征在于，在基板上形成有硅传感器部，在所述光传感器部中包含第一导电型区域，在所述硅层中形成第二导电型区域 通过离子注入从固态成像装置的后表面注入; 在硅层上形成配线部分; 并且支撑基板被接合到布线部分，其中，固态成像装置被配置为经由固态成像装置的后表面接收入射光。

    Solid-state imaging device
    56.
    发明授权
    Solid-state imaging device 有权
    固态成像装置

    公开(公告)号：US08017984B2

    公开(公告)日：2011-09-13

    申请号：US12323006

    申请日：2008-11-25

    Applicant: Yoshiaki Kitano ,  Hideshi Abe ,  Jun Kuroiwa ,  Kiyoshi Hirata ,  Hiroaki Ohki ,  Nobuhiro Karasawa ,  Ritsuo Takizawa ,  Mitsuru Yamashita ,  Mitsuru Sato ,  Katsunori Kokubun

    Inventor： Yoshiaki Kitano ,  Hideshi Abe ,  Jun Kuroiwa ,  Kiyoshi Hirata ,  Hiroaki Ohki ,  Nobuhiro Karasawa ,  Ritsuo Takizawa ,  Mitsuru Yamashita ,  Mitsuru Sato ,  Katsunori Kokubun

    IPC: H01L31/113 ,  H01L27/146

    CPC classification number: H01L27/14601 ,  H01L27/14689 ,  H01L27/14806 ,  H04N5/335

    Abstract: A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area is formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area is formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.

    Abstract translation: 具有这样一种结构的固态成像装置，该结构使得用于读取信号电荷的电极设置在构成像素的光接收传感器部分的一侧; 将预定的电压信号V施加到形成为覆盖除了光接收传感器部分之外的图像拾取区域的遮光膜; 第二导电型半导体区域形成在构成光接收传感器部分的光电转换区域的第一导电型半导体区域的表面上的中心; 并且在第一导电型半导体区域的电极侧的端部的表面上形成比第二导电型半导体区域的杂质浓度低的区域， 像素分离区域。

    Solid-state imaging device and method for manufacturing the same
    60.
    发明授权
    Solid-state imaging device and method for manufacturing the same 有权
    固态成像装置及其制造方法

    公开(公告)号：US07659183B2

    公开(公告)日：2010-02-09

    申请号：US11466523

    申请日：2006-08-23

    Applicant: Yasushi Maruyama ,  Hideshi Abe ,  Hiroyuki Mori

    Inventor： Yasushi Maruyama ,  Hideshi Abe ,  Hiroyuki Mori

    IPC: H01L21/30

    CPC classification number: H01L27/14645 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14658 ,  H01L27/14683 ,  H01L27/14685 ,  H01L27/14689

    Abstract: A solid-state imaging device having a high sensitivity and a structure in which a miniaturized pixel is obtained, and a method for manufacturing the solid-state imaging device in which an interface is stable, a spectroscopic characteristic is excellent and which can be manufactured with a high yield ratio are provided.The solid-state imaging device includes at least a silicon layer formed with a photo sensor portion and a wiring layer formed on the front-surface side of the silicon layer, and in which light L is made to enter from the rear-surface side opposite to the front-surface side of the silicon layer and the thickness of the silicon layer 4 is 10 μm or less. Also, the method for manufacturing the solid-state imaging device at least includes the steps of: forming a semiconductor region of a photo sensor portion in a silicon layer of a layered substrate in which a silicon substrate, an intermediate layer and a silicon layer are laminated; bonding a first supporting substrate onto the silicon layer; removing the silicon substrate and the intermediate layer; forming thereafter a wiring portion above the silicon layer; bonding a second supporting substrate onto the wiring portion, and removing the first supporting substrate to make the silicon layer exposed.

    Abstract translation: 具有高灵敏度的固态成像装置和获得小型化像素的结构，以及其中界面稳定的固态成像装置的制造方法，光谱特性优异并且可以用 提供高产率。 固态成像装置至少包括形成有光传感器部分的硅层和形成在硅层的表面侧的布线层，并且使光L从相对的背面侧进入 到硅层的表面侧，硅层4的厚度为10μm以下。 此外，制造固态成像装置的方法至少包括以下步骤：在硅衬底，中间层和硅层的层叠衬底的硅层中形成光电传感器部分的半导体区域 层压; 将第一支撑衬底接合到所述硅层上; 去除硅衬底和中间层; 然后形成硅层上方的布线部分; 将第二支撑基板接合到布线部分上，并且移除第一支撑基板以使硅层暴露。

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