System and method for photolithography in semiconductor manufacturing
    51.
    发明授权
    System and method for photolithography in semiconductor manufacturing 有权
    半导体制造中的光刻系统和方法

    公开(公告)号:US07371671B2

    公开(公告)日:2008-05-13

    申请号:US11050312

    申请日:2005-02-03

    IPC分类号: H01L21/3205 H01L21/4763

    CPC分类号: H01L21/76802 H01L21/31144

    摘要: A method for forming a semiconductor device includes forming a photoresist layer over a substrate and patterning the photoresist layer to form photoresist portions. A second layer is formed over the substrate in areas not covered by the photoresist portions and the photoresist portions are removed. After removing the photoresist portions, the second layer is used to modify the substrate to create at least a portion of the semiconductor device.

    摘要翻译: 一种用于形成半导体器件的方法包括在衬底上形成光致抗蚀剂层并图案化光致抗蚀剂层以形成光致抗蚀剂部分。 在不被光致抗蚀剂部分覆盖的区域中的衬底上形成第二层,并去除光致抗蚀剂部分。 在去除光致抗蚀剂部分之后,第二层用于修改基板以产生半导体器件的至少一部分。

    Process control method
    52.
    发明授权
    Process control method 有权
    过程控制方法

    公开(公告)号:US07356380B2

    公开(公告)日:2008-04-08

    申请号:US11027412

    申请日:2004-12-30

    IPC分类号: G06F19/00

    CPC分类号: G05D23/24 G05D23/1934

    摘要: A methodology for doing process control by using a heating apparatus comprising heating zones is revealed. First, a target CD (critical dimension) map is assigned. A baseline CD map corresponding to a substrate processed with the heating apparatus at a baseline setting is also obtained. An original CD map corresponding to a substrate processed at an original setting is obtained. For each heating zone, a perturbed CD map corresponding to a substrate processed at a perturbed setting is also obtained. The temperature distribution of the heating apparatus is adjusted according to the error CD map defined by the baseline CD map and the target CD map, basis functions defined by the original CD map and perturbed CD maps, and expansion coefficients expanding the error CD map with basis functions.

    摘要翻译: 揭示了通过使用包括加热区域的加热装置进行过程控制的方法。 首先,分配目标CD(关键尺寸)图。 还获得了对应于在加热装置处理的基板在基线设置处的基线CD图。 获得与以原始设置处理的基板对应的原始CD图。 对于每个加热区域,也获得对应于在扰动设置处理的基板的扰动的CD图。 根据由基准CD映射和目标CD映射定义的误差CD映射,由原始CD映射和扰动CD映射定义的基函数以及扩展系数扩展错误CD映射的基础来调节加热设备的温度分布 功能。

    Apparatus and method for mounting a hard pellicle
    53.
    发明申请
    Apparatus and method for mounting a hard pellicle 有权
    用于安装硬膜的装置和方法

    公开(公告)号:US20060187440A1

    公开(公告)日:2006-08-24

    申请号:US11412555

    申请日:2006-04-27

    申请人: Burn Jeng Lin

    发明人: Burn Jeng Lin

    IPC分类号: G03B27/62

    摘要: An apparatus for mounting at least one hard pellicle to a mask which includes an enclosure having an interior cavity, demounting means for removing a protective cover from a mask, mounting means for mounting at least one hard pellicle to the mask and conduit means for pumping a light-transmitting gas into the interior cavity between the hard pellicle and the mask.

    摘要翻译: 一种用于将至少一个硬膜安装到掩模上的装置,其包括具有内腔的外壳,用于从掩模移除保护盖的拆卸装置,用于将至少一个硬膜安装到所述掩模的安装装置和用于泵送 透光气体进入硬膜和面罩之间的内腔。

    Step and repeat apparatus having enhanced accuracy and increased
throughput
    54.
    发明授权
    Step and repeat apparatus having enhanced accuracy and increased throughput 失效
    步进和重复装置具有增强的精度和增加的产量

    公开(公告)号:US5715064A

    公开(公告)日:1998-02-03

    申请号:US261630

    申请日:1994-06-17

    申请人: Burn Jeng Lin

    发明人: Burn Jeng Lin

    IPC分类号: G03F7/20 H01L21/027 G01B11/00

    摘要: A multi-station Step and Repeat Apparatus (Stepper) for imaging semiconductor wafers. The stepper has at least 2 stations, at least one of which is for imaging. The second station may be used for image field characterization, or image defect correction, or for Phase Shift Mask (PSM) loop cutting. Multiple laser beams directed in orthogonal directions provide interferometric monitoring to track wafer locations for wafers on the stepper.

    摘要翻译: 用于对半导体晶片进行成像的多工位步进和重复装置(步进)。 步进电机至少有2个电台,其中至少有一个用于成像。 第二站可用于图像场表征或图像缺陷校正,或用于相移掩模(PSM)循环切割。 在正交方向上引导的多个激光束提供干涉测量以跟踪步进器上的晶片的晶片位置。

    Dynamic magnetic bubble display system
    55.
    发明授权
    Dynamic magnetic bubble display system 失效
    动态磁性气泡显示系统

    公开(公告)号:US3971887A

    公开(公告)日:1976-07-27

    申请号:US575908

    申请日:1975-05-09

    CPC分类号: G09G3/34 G02F1/09 G11C13/043

    摘要: A dynamic pattern display and optical data processing system is provided including magnetic bubble devices which may be operated in real-time to produce a multi-tone (gray scale) two dimensional pattern. The display pattern is obtained by directing a light beam, which in certain applications may be linearly polarized, through a plurality of two-dimensional magnetic bubble arrays combined in a stack arrangement. Each magnetic bubble array constitutes a layer which differs in thickness from the other magnetic bubble layers. Each magnetic bubble array is also electronically driven by its own bubble propagating circuit which produces, in most embodiments, a different "local transmissivity" which is determined by whether a bubble or an empty space is propagated to the location. The degree of transmitted intensity is an exponential function of the number of magnetic bubble layers, thus n layers provides 2.sup.n steps of transmitted intensity and a four layer structure provides a sixteen tone gray scale display. The electronic portion of the structure may be driven by signals representing mathematical expressions, patterns, manual inputs and the like to generate holograms, holographic complex filters, three-dimensional television pictures, spatial intensity filters, or ordinary two-dimensional multi-tone television pictures.

    摘要翻译: 提供动态图案显示和光学数据处理系统,其包括可以实时操作以产生多色调(灰度)二维图案的磁性气泡装置。 显示图案是通过在堆叠布置中组合的多个二维磁性气泡阵列来引导在某些应用中可以是线偏振的光束而获得的。 每个磁气泡阵列构成厚度与其它磁性气泡层不同的层。 每个磁性气泡阵列也由其自身的气泡传播电路进行电子驱动,在大多数实施例中,其产生不同的“局部透射率”,其由气泡或空白空间传播到该位置来确定。 透射强度的程度是磁泡层数量的指数函数,因此n层提供了传输强度的2n个步长,而四层结构提供了十六色灰度显示。 结构的电子部分可以由表示数学表达式,图案,手动输入等的信号驱动,以产生全息图,全息复合滤波器,三维电视图像,空间强度滤波器或普通的二维多色调电视图像 。

    Photoresist materials and photolithography processes
    56.
    发明授权
    Photoresist materials and photolithography processes 有权
    光刻胶材料和光刻工艺

    公开(公告)号:US08848163B2

    公开(公告)日:2014-09-30

    申请号:US13050251

    申请日:2011-03-17

    IPC分类号: G03B27/52 G03B27/42

    摘要: A lithography apparatus generates a tunable magnetic field to facilitate processing of photoresist. The lithography apparatus includes a chamber and a substrate stage in the chamber operable to hold a substrate. A magnetic module provides a magnetic field to the substrate on the substrate stage. The magnetic module is configured to provide the magnetic field in a tunable and alternating configuration with respect to its magnitude and frequency. The magnetic field is provided to have a gradient in magnitude along a Z-axis that is perpendicular to the substrate stage to cause magnetically-charged particles disposed over the substrate stage to move up and down along the Z-axis. The lithography apparatus also includes a radiation energy source and an objective lens configured to receive radiation energy from the radiation energy source and direct the radiation energy toward the substrate positioned on the substrate stage.

    摘要翻译: 光刻设备产生可调磁场以便于光致抗蚀剂的加工。 光刻设备包括腔室和腔室中的衬底台,其可操作以保持衬底。 磁性模块为衬底台上的衬底提供磁场。 磁模块被配置为相对于其幅度和频率提供可调和交替配置的磁场。 磁场被提供为具有沿垂直于衬底台的Z轴的幅度梯度,以使得设置在衬底台上的带磁性颗粒沿Z轴上下移动。 光刻设备还包括辐射能量源和物镜,其被配置为从辐射能量源接收辐射能量并将辐射能量引向位于衬底台上的衬底。

    Immersion lithography system using direction-controlling fluid inlets
    57.
    发明授权
    Immersion lithography system using direction-controlling fluid inlets 有权
    浸入光刻系统采用方向控制流体入口

    公开(公告)号:US08767178B2

    公开(公告)日:2014-07-01

    申请号:US13482879

    申请日:2012-05-29

    IPC分类号: G03B27/42

    CPC分类号: G03B27/52 G03F7/70341

    摘要: Immersion lithography system and method using direction-controlling fluid inlets are described. According to one embodiment of the present disclosure, an immersion lithography apparatus includes a lens assembly having an imaging lens disposed therein and a wafer stage configured to retain a wafer beneath the lens assembly. The apparatus also includes a plurality of direction-controlling fluid inlets disposed adjacent to the lens assembly, each direction-controlling fluid inlet in the plurality of direction-controlling fluid inlets being configured to direct a flow of fluid beneath the lens assembly and being independently controllable with respect to the other fluid inlets in the plurality of direction-controlling fluid inlets.

    摘要翻译: 描述了使用方向控制流体入口的浸渍光刻系统和方法。 根据本公开的一个实施例,浸没式光刻设备包括具有设置在其中的成像透镜的透镜组件和被配置为将晶片保持在透镜组件下方的晶片台。 该装置还包括多个方向控制流体入口,其邻近透镜组件设置,多个方向控制流体入口中的每个方向控制流体入口构造成将透镜流体下方的流体引导到透镜组件的下方并且可独立控制 相对于多个方向控制流体入口中的其它流体入口。

    Method for metal correlated via split for double patterning
    58.
    发明授权
    Method for metal correlated via split for double patterning 有权
    用于双重图案化的金属相互分离的方法

    公开(公告)号:US08381139B2

    公开(公告)日:2013-02-19

    申请号:US13006608

    申请日:2011-01-14

    IPC分类号: G06F17/50

    摘要: The embodiments of via mask splitting methods for double patterning technology described enable via patterning to align to a metal layer underneath or overlying to reduce overlay error and to increase via landing. If adjacent vias violate the G0-mask-split-rule for space or pitch (or both) between vias, the mask assignment of end vias are given higher priority to ensure good landing of end vias, since they are at higher risk of mislanding. The metal correlated via mask splitting methods enable better via performance, such as lower via resistance, and higher via yield.

    摘要翻译: 所描述的用于双重图案化技术的通孔掩模分裂方法的实施例使得能够经由图案化以对准下面的金属层或覆盖以减少覆盖误差并增加通过着陆。 如果相邻的通孔违反了通孔之间的空间或间距(或两者)的G0-掩模分割规则,则优先考虑末端通孔的掩模分配,以确保最终通孔的良好着陆,因为它们具有较高的误放置风险。 通过掩模分离方法相关的金属能够实现更好的通过性能,例如较低的通孔电阻和较高的通孔产量。

    Immersion lithography system using a sealed wafer bath
    59.
    发明授权
    Immersion lithography system using a sealed wafer bath 有权
    浸没光刻系统使用密封晶圆槽

    公开(公告)号:US08208116B2

    公开(公告)日:2012-06-26

    申请号:US11670860

    申请日:2007-02-02

    IPC分类号: G03B27/52

    CPC分类号: G03B27/52 G03F7/70341

    摘要: Immersion lithography system and method using a sealed wafer bottom are described. One embodiment is an immersion lithography apparatus including a lens assembly comprising an imaging lens and a wafer stage for retaining a wafer beneath the lens assembly and comprising a seal ring for sealing a gap between a bottom edge of a wafer retained on the wafer stage and the wafer stage. The apparatus further includes a fluid tank for retaining immersion fluid, the fluid tank situated with respect to the wafer stage for enabling full immersion of the wafer retained on the wafer stage in the immersion fluid; a cover disposed over at least a portion of the fluid tank for providing a temperature-controlled, fluid-rich environment within the fluid tank; and at least one directional flow control fluid inlet surrounding the imaging lens for directing immersion fluid toward an edge of the wafer retained on the wafer stage closest to the imaging lens.

    摘要翻译: 描述了浸没光刻系统和使用密封晶片底部的方法。 一个实施例是一种浸没光刻设备,其包括透镜组件,该透镜组件包括成像透镜和用于将晶片保持在透镜组件下方的晶片台,并且包括密封环,用于密封保留在晶片台上的晶片的底部边缘与 晶圆台。 该装置还包括用于保持浸没流体的流体箱,相对于晶片台定位的流体箱,用于使保留在晶片台上的晶片能够完全浸入浸没流体中; 设置在所述流体箱的至少一部分上的盖,用于在所述流体箱内提供温度控制的,富含流体的环境; 以及围绕成像透镜的至少一个方向流量控制流体入口,用于将浸没流体引向保持在最靠近成像透镜的晶片台上的晶片的边缘。

    Apparatus for Method for Immersion Lithography
    60.
    发明申请
    Apparatus for Method for Immersion Lithography 有权
    浸没光刻方法的设备

    公开(公告)号:US20110261334A1

    公开(公告)日:2011-10-27

    申请号:US13176587

    申请日:2011-07-05

    申请人: Burn Jeng Lin

    发明人: Burn Jeng Lin

    IPC分类号: G03B27/52

    摘要: An apparatus for immersion lithography that includes an imaging lens which has a front surface, a fluid-containing wafer stage for supporting a wafer that has a top surface to be exposed positioned spaced-apart and juxtaposed to the front surface of the imaging lens, and a fluid that has a refractive index between about 1.0 and about 2.0 filling a gap formed in-between the front surface of the imaging lens and the top surface of the wafer. A method for immersion lithography can be carried out by flowing a fluid through a gap formed in-between the front surface of an imaging lens and a top surface of a wafer. The flow rate and temperature of the fluid can be controlled while particulate contaminants are filtered out by a filtering device.

    摘要翻译: 一种用于浸没式光刻的装置,其包括具有前表面的成像透镜,用于支撑晶片的含流体的晶片台,所述晶片载台具有被间隔开并与所述成像透镜的前表面并置的待暴露的顶表面;以及 具有约1.0至约2.0的折射率的流体填充在成像透镜的前表面和晶片的顶表面之间形成的间隙。 可以通过使流体流过形成在成像透镜的前表面和晶片的顶表面之间的间隙来进行浸没式光刻的方法。 可以控制流体的流速和温度,同时通过过滤装置将颗粒污染物过滤掉。