In-plane switching liquid crystal display array
    52.
    发明授权
    In-plane switching liquid crystal display array 有权
    平面切换液晶显示阵列

    公开(公告)号:US06506617B1

    公开(公告)日:2003-01-14

    申请号:US10109795

    申请日:2002-03-27

    Inventor: Jia-Shyong Cheng

    CPC classification number: G02F1/134363

    Abstract: A TFT array substrate and a process for manufacturing the same are provided. A plurality of TFTs in array are formed on a substrate. A gate insulating layer and a protection layer are sequentially formed to cover a pixel region of the substrate. A plurality of openings each of which has an undercut profile are formed in the gate insulating layer and the protection layer. Then, a transparent conductive layer is formed over the substrate. One of the two parts separated is located in a bottom of the opening and the other is on the protection layer, such that two parts of the transparent conductive layer disconnect and no junction there between occurs. The part of the transparent conductive layer in the bottom of the opening is referred to as a transparent pixel electrode. The part of the transparent conductive layer on the protection layer is connected to a common metal line to form a transparent common electrode. The transparent pixel electrode disconnects to but overlaps the protection layer.

    Abstract translation: 提供TFT阵列基板及其制造方法。 阵列上的多个TFT形成在基板上。 依次形成栅极绝缘层和保护层以覆盖基板的像素区域。 在栅绝缘层和保护层中形成有多个开口,每个开口具有底切轮廓。 然后,在衬底上形成透明导电层。 分离的两个部件中的一个位于开口的底部,另一个位于保护层上,使得透明导电层的两个部分断开并且不发生连接。 将开口底部的透明导电层的一部分称为透明像素电极。 保护层上的透明导电层的一部分连接到公共金属线以形成透明公共电极。 透明像素电极断开,但与保护层重叠。

    Tri-layer process for forming TFT matrix of LCD with gate metal layer around pixel electrode as black matrix
    53.
    发明授权
    Tri-layer process for forming TFT matrix of LCD with gate metal layer around pixel electrode as black matrix 有权
    用于形成具有围绕像素电极的栅极金属层作为黑矩阵的LCD的TFT矩阵的三层工艺

    公开(公告)号:US06448117B1

    公开(公告)日:2002-09-10

    申请号:US09656093

    申请日:2000-09-06

    Abstract: A simplified tri-layer process for forming a thin film transistor matrix for a liquid crystal display is disclosed. By forming a pixel electrode layer before a gate metal layer, a remaining portion of the gate metal layer surrounding the pixel electrode can function as a black matrix after properly patterning and etching the gate metal layer. The in-situ black matrix exempts from an additional step of providing a black matrix and solves the problem in alignment.

    Abstract translation: 公开了用于形成用于液晶显示器的薄膜晶体管矩阵的简化三层工艺。 通过在栅极金属层之前形成像素电极层,围绕像素电极的栅极金属层的剩余部分在适当地构图和蚀刻栅极金属层之后可以用作黑色矩阵。 原位黑矩阵免除了提供黑矩阵的额外步骤,并解决了对准中的问题。

    Tri-layer process for forming TFT matrix of LCD with reduced masking steps

    公开(公告)号:US06436740B1

    公开(公告)日:2002-08-20

    申请号:US09615919

    申请日:2000-07-13

    CPC classification number: H01L29/66765

    Abstract: A simplified tri-layer process for forming a thin film transistor matrix for a liquid crystal display is disclosed. By using a backside exposure technique, the masking step for patterning an etch stopper layer can be omitted. After forming an active region including a gate electrode and a scan line on the front side of a substrate, and sequentially applying an etch stopper layer and a photoresist layer over the resulting structure, the backside exposure is performed by exposing from the back side of the substrate. A portion of photoresist is shielded by the active region from exposure so that an etch stopper structure having a shape similar to the shape of the active region is formed without any photo-masking and lithographic procedure. Therefore, the above self-aligned effect allows one masking step to be reduced so as to simplify the process.

    Method of fabricating capacitor plate
    55.
    发明授权
    Method of fabricating capacitor plate 失效
    制造电容器板的方法

    公开(公告)号:US5966610A

    公开(公告)日:1999-10-12

    申请号:US2675

    申请日:1998-01-05

    CPC classification number: H01L28/92 H01L28/91 H01L27/10814 H01L27/10852

    Abstract: A method of fabricating a capacitor plate constitutes first providing a substrate. Then, first insulating layer is formed over the substrate. Sequentially, a buffering layer and a second insulating layer, both of which constitute a stacked structure, are formed over the first insulating layer. Next, the stacked structure is patterned into an opening thereby exposing a portion of the first insulating layer therethrough. Subsequently, conducting spacers are formed on the sidewalls of the opening. The second insulating layer is thereafter removed, and simultaneously a portion of the first insulating layer not covered by the buffering layer and the conducting spacers are removed to form a contact window, thereby exposing a portion of the substrate therethrough. Then, a conducting layer is conformably deposited over the substrate, and thereafter etched away until a portion of the buffering layer is exposed. Finally, the exposed buffering layer is removed. The remaining conducting layer and the conducting spacers constitute the capacitor's bottom electrode plate.

    Abstract translation: 构成电容器板的方法首先构成基板。 然后,在基板上形成第一绝缘层。 顺序地,在第一绝缘层上形成缓冲层和构成堆叠结构的第二绝缘层。 接下来,将堆叠结构图案化成开口,从而使第一绝缘层的一部分暴露于其中。 随后,在开口的侧壁上形成导电间隔物。 此后除去第二绝缘层,同时将不被缓冲层和导电间隔物覆盖的第一绝缘层的一部分移除以形成接触窗,从而使基板的一部分暴露。 然后,将导电层顺应地沉积在衬底上,然后蚀刻掉直到缓冲层的一部分露出。 最后,暴露的缓冲层被去除。 剩余的导电层和导电间隔物构成电容器的底部电极板。

    Method for fabricating a storage plate of a semiconductor capacitor
    56.
    发明授权
    Method for fabricating a storage plate of a semiconductor capacitor 失效
    制造半导体电容器的存储板的方法

    公开(公告)号:US5960295A

    公开(公告)日:1999-09-28

    申请号:US009160

    申请日:1998-01-20

    CPC classification number: H01L28/92

    Abstract: The present invention provides a method for fabricating a storage plate of a semiconductor capacitor. A conductive layer is first formed on a semiconductor substrate. A glue layer is formed on the conductive layer. A plurality of micro masking-balls are then spread onto the surface of the glue layer. Using these micro masking-balls as masks, the glue layer is etched to expose a portion surface of the conductive layer. Using the remaining glue layer as a mask, the conductive layer is etched to form a bristle-shaped conductive layer. After that, the glue layer and micro masking-balls are removed, thereby allowing the remaining bristle-shaped conductive layer to form a storage plate of a semiconductor capacitor.

    Abstract translation: 本发明提供一种制造半导体电容器的存储板的方法。 首先在半导体衬底上形成导电层。 在导电层上形成胶层。 然后将多个微掩模球展开到胶层的表面上。 使用这些微掩模球作为掩模,蚀刻胶层以暴露导电层的部分表面。 使用剩余的胶层作为掩模,蚀刻导电层以形成刷毛状导电层。 之后,去除胶层和微掩模球,由此使残留的刷毛状导电层形成半导体电容器的存储板。

    Method for forming high performance thin film transistor structure
    57.
    发明授权
    Method for forming high performance thin film transistor structure 失效
    用于形成高性能薄膜晶体管结构的方法

    公开(公告)号:US5834344A

    公开(公告)日:1998-11-10

    申请号:US680687

    申请日:1996-07-17

    Inventor: Jia-Shyong Cheng

    CPC classification number: H01L29/78633 G02F1/1368

    Abstract: A high performance thin film transistor structure which includes a pixel electrode layer formed after a passivation step such that electrical connections can be made to a source electrode and to overlap a channel length of the transistor. As a result, the effective channel length can be reduced and the occurrence of short-circuiting is also minimized in densely packed devices. The pixel electrode can be formed of a non-transparent metallic material to serve as a light shield such that the thin film transistor can be most suitably used in a liquid crystal display device.

    Abstract translation: 一种高性能薄膜晶体管结构,其包括在钝化步骤之后形成的像素电极层,使得可以对源电极进行电连接并与晶体管的沟道长度重叠。 结果,可以减少有效的通道长度,并且密集装置中的短路的发生也被最小化。 像素电极可以由非透明金属材料形成以用作遮光板,使得薄膜晶体管最适合用于液晶显示装置。

    Touch panel and electronic device including the same
    58.
    发明授权
    Touch panel and electronic device including the same 有权
    触摸面板和电子设备包括相同

    公开(公告)号:US08350727B2

    公开(公告)日:2013-01-08

    申请号:US12826580

    申请日:2010-06-29

    CPC classification number: G06F3/045

    Abstract: A touch panel comprises: a first conductive plate including a first substrate having a surface, a first conductive layer disposed on the surface of the first substrate and exhibiting an anisotropic resistivity, and at least one conductive first connecting line, the surface of the first substrate having a peripheral edge, a sensing region covered by the first conductive layer, and a marginal region extending from the sensing region to the peripheral edge, the first connecting line being disposed on the marginal region; and a second conductive plate including a second substrate and a second conductive layer disposed on the second substrate, facing the first conductive layer, and exhibiting anisotropic resistivity. An electronic device including the touch panel is also disclosed.

    Abstract translation: 触摸面板包括:第一导电板,包括具有表面的第一基板,设置在第一基板的表面上并呈现各向异性电阻率的第一导电层,以及至少一个导电第一连接线,第一基板的表面 具有外围边缘,由第一导电层覆盖的感测区域和从感测区域延伸到周边边缘的边缘区域,第一连接线路设置在边缘区域上; 以及第二导电板,其包括第二基板和布置在所述第二基板上的面向所述第一导电层的第二导电层,并且具有各向异性的电阻率。 还公开了包括触摸面板的电子设备。

    Electro-wetting display device
    60.
    发明授权
    Electro-wetting display device 有权
    电润湿显示装置

    公开(公告)号:US08115709B2

    公开(公告)日:2012-02-14

    申请号:US12220525

    申请日:2008-07-25

    CPC classification number: G09G3/3433 G02B26/005 G09G3/348 G09G2300/08

    Abstract: An exemplary electro-wetting display (EWD) device includes an upper substrate, a lower substrate opposite to the upper substrate, a plurality of side walls interposed between the upper and lower substrates and cooperating with the upper and lower substrates to form a plurality of pixel units, a first polar liquid disposed in the pixel units, a second, colored, non-polar liquid disposed in the pixel units and being immiscible with the first liquid, and a plurality of scanning lines disposed on the lower substrate and parallel to and spaced apart from each other for providing scanning signals to the pixel units. Each of the pixel units corresponds to at least part of a corresponding previous scanning line.

    Abstract translation: 示例性电润湿显示器(EWD)装置包括上基板,与上基板相对的下基板,插入在上基板和下基板之间的多个侧壁,并与上基板和下基板配合以形成多个像素 单元,设置在像素单元中的第一极性液体,设置在像素单元中并与第一液体不混溶的第二有色非极性液体,以及设置在下基板上并平行并间隔开的多个扫描线 彼此之间用于向像素单元提供扫描信号。 每个像素单元对应于对应的先前扫描线的至少一部分。

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