公开(公告)号：US20060236920A1

公开(公告)日：2006-10-26

申请号：US11446135

申请日：2006-06-05

申请人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Jun Koyama ,  Yasushi Ogata ,  Masahiko Hayakawa ,  Mitsuaki Osame

发明人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Jun Koyama ,  Yasushi Ogata ,  Masahiko Hayakawa ,  Mitsuaki Osame

IPC分类号： C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC分类号： H01L21/02488 ,  H01L21/02532 ,  H01L21/02672 ,  H01L21/02675 ,  H01L21/3221 ,  H01L27/12 ,  H01L27/1277

摘要： Concentration of metal element which promotes crystallization of silicon and which exists within a crystal silicon film obtained by utilizing the metal element is reduced. A first heat treatment for crystallization is implemented after introducing nickel to an amorphous silicon film 103. Then, laser light is irradiated to diffuse the nickel element concentrated locally. After that, another heat treatment is implemented within an oxidizing atmosphere at a temperature higher than that of the previous heat treatment. A thermal oxide film 106 is formed in this step. At this time, the nickel element is gettered to the thermal oxide film 106. Then, the thermal oxide film 106 is removed. Thereby, a crystal silicon film 107 having low concentration of the metal element and a high crystallinity can be obtained.

公开(公告)号：US06744069B1

公开(公告)日：2004-06-01

申请号：US08785488

申请日：1997-01-17

申请人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Jun Koyama ,  Yasushi Ogata ,  Masahiko Hayakawa ,  Mitsuaki Osame ,  Hisashi Ohtani ,  Toshiji Hamatani

发明人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Jun Koyama ,  Yasushi Ogata ,  Masahiko Hayakawa ,  Mitsuaki Osame ,  Hisashi Ohtani ,  Toshiji Hamatani

IPC分类号： H01L2904

CPC分类号： H01L29/66757 ,  H01L21/0242 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/02686 ,  H01L21/28158 ,  H01L21/3221 ,  H01L21/3226 ,  H01L29/04 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78675

摘要： Nickel is selectively held in contact with a particular region of an amorphous silicon film. Crystal growth parallel with a substrate is effected by performing a heat treatment. A thermal oxidation film is formed by performing a heat treatment in an oxidizing atmosphere containing a halogen element. During this step, the crystallinity is improved and the gettering of nickel elements proceeds. A thin-film transistor is formed so that the direction connecting source and drain regions coincides with the above crystal growth direction. As a result, a TFT having superior characteristics such as a mobility larger than 200 cm2/Vs and an S value smaller than 100 mV/dec. can be obtained.

摘要翻译： 镍选择性地保持与非晶硅膜的特定区域接触。 通过进行热处理来实现与基板平行的晶体生长。 通过在含有卤素元素的氧化气氛中进行热处理而形成热氧化膜。 在此步骤中，结晶度得到改善，并且镍元素的吸除进行。 形成薄膜晶体管，使得连接源极和漏极区域的方向与上述晶体生长方向一致。 结果，具有诸如迁移率大于200cm 2 / Vs和S值小于100mV / dec的优异特性的TFT。 可以获得。

公开(公告)号：US06504174B1

公开(公告)日：2003-01-07

申请号：US09536801

申请日：2000-03-28

申请人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Jun Koyama ,  Yasushi Ogata ,  Masahiko Hayakawa ,  Mitsuaki Osame ,  Hisashi Ohtani ,  Toshiji Hamatani

发明人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Jun Koyama ,  Yasushi Ogata ,  Masahiko Hayakawa ,  Mitsuaki Osame ,  Hisashi Ohtani ,  Toshiji Hamatani

IPC分类号： H01L31036

CPC分类号： H01L21/02686 ,  H01L21/02532 ,  H01L21/2022 ,  H01L21/28158 ,  H01L21/3221 ,  H01L21/3226 ,  H01L27/12 ,  H01L27/1203 ,  H01L27/1277 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78675

摘要： A novel and very useful method for forming a crystal silicon film by introducing a metal element which promotes crystallization of silicon to an amorphous silicon film and for eliminating or reducing the metal element existing within the crystal silicon film thus obtained is provided. The method for fabricating a semiconductor device comprises steps of intentionally introducing the metal element which promotes crystallization of silicon to the amorphous silicon film and crystallizing the amorphous silicon film by a first heat treatment to obtain the crystal silicon film; eliminating or reducing the metal element existing within the crystal silicon film by implementing a second heat treatment within an oxidizing atmosphere; eliminating a thermal oxide film formed in the previous step; and forming another thermal oxide film on the surface of the region from which the thermal oxide film has been eliminated by implementing another thermal oxidation.

公开(公告)号：US06478263B1

公开(公告)日：2002-11-12

申请号：US09428471

申请日：1999-10-28

申请人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Jun Koyama ,  Yasushi Ogata ,  Masahiko Hayakawa ,  Mitsuaki Osame ,  Hisashi Ohtani ,  Toshiji Hamatani

发明人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Jun Koyama ,  Yasushi Ogata ,  Masahiko Hayakawa ,  Mitsuaki Osame ,  Hisashi Ohtani ,  Toshiji Hamatani

IPC分类号： H01L2904

CPC分类号： H01L21/02672 ,  H01L21/2022 ,  H01L21/28158 ,  H01L21/3221 ,  H01L21/3226 ,  H01L27/12 ,  H01L27/1277 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78675

摘要： Nickel is selectively held in contact with a particular region of an amorphous silicon film. Crystal growth parallel with a substrate is effected by performing a heat treatment. A thermal oxidation film is formed on the silicon film by performing a heat treatment in an oxidizing atmosphere containing a halogen element. During this step, in the silicon film, impurities included such as oxygen or chlorine, are segregated with extending along the crystal growth, the crystallinity is improved, and the gettering of nickel element proceeds. A thin-film transistor is formed so that the direction connecting source and drain regions coincides with the above crystal growth direction. As a result, a TFT having superior characteristics such as a mobility larger than 200 cm2/Vs and an S value smaller than 100 mV/dec. can be obtained.

摘要翻译： 镍选择性地保持与非晶硅膜的特定区域接触。 通过进行热处理来实现与基板平行的晶体生长。 通过在含有卤素元素的氧化气氛中进行热处理，在硅膜上形成热氧化膜。 在该步骤中，在硅膜中，包含的杂质如氧或氯的杂质沿着晶体生长延伸而分离，结晶度提高，并且镍元素的吸杂进行。 形成薄膜晶体管，使得连接源极和漏极区域的方向与上述晶体生长方向一致。 结果，具有诸如迁移率大于200cm2 / Vs和S值小于100mV / dec的优异特性的TFT。 可以获得。

公开(公告)号：US5888858A

公开(公告)日：1999-03-30

申请号：US784291

申请日：1997-01-16

申请人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Jun Koyama ,  Yasushi Ogata ,  Masahiko Hayakawa ,  Mitsuaki Osame

发明人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Jun Koyama ,  Yasushi Ogata ,  Masahiko Hayakawa ,  Mitsuaki Osame

IPC分类号： H01L21/20 ,  H01L21/322 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/49 ,  H01L29/786 ,  H01L21/00 ,  H01L21/326

CPC分类号： H01L29/66757 ,  H01L21/2022 ,  H01L21/3221 ,  H01L21/3226 ,  H01L27/12 ,  H01L27/1203 ,  H01L27/1277 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78675 ,  H01L29/4908

摘要： Concentration of metal element which promotes crystallization of silicon and which exists within a crystal silicon film obtained by utilizing the metal element is reduced. A first heat treatment for crystallization is implemented after introducing nickel to an amorphous silicon film. Then, after obtaining the crystal silicon film, another heat treatment is implemented within an oxidizing atmosphere at a temperature higher than that of the previous heat treatment. A thermal oxide film is formed in this step. At this time, gettering of the nickel element into the thermal oxide film takes place. Then, the thermal oxide film is removed. Thereby, a crystal silicon film having low concentration of the metal element and a high crystalinity can be obtained.

公开(公告)号：US09159291B2

公开(公告)日：2015-10-13

申请号：US11382408

申请日：2006-05-09

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Yoshifumi Tanada ,  Mitsuaki Osame ,  Hajime Kimura ,  Ryota Fukumoto ,  Hiromi Yanai

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Yoshifumi Tanada ,  Mitsuaki Osame ,  Hajime Kimura ,  Ryota Fukumoto ,  Hiromi Yanai

IPC分类号： G09G3/36 ,  G09G3/20

CPC分类号： G09G3/3688 ,  G09G3/20 ,  G09G2310/0294 ,  G09G2320/0271 ,  G09G2340/0428 ,  G09G2360/144 ,  G09G2370/08

摘要： The liquid crystal display device performs display by changing the number of gray scales depending on external light intensity, and switches the display mode in accordance with a content to be displayed on a display. By controlling a display mode-specific video signal generation circuit depending on external light intensity, an inputted video signal is outputted as an analog value, is outputted with a digital value of a binary, or is outputted with a multiple digital value. As a result, display gradation of a pixel changes timely. Accordingly, a clear image can be displayed. For example, a display device which secures visibility can be obtained in a wide range from under fluorescent light in a dark place or indoor to under outdoor sunlight.

摘要翻译： 液晶显示装置通过根据外部光强度改变灰度级数来执行显示，并且根据要显示在显示器上的内容来切换显示模式。 通过根据外部光强度控制显示模式特定的视频信号发生电路，输出的视频信号作为模拟值，以二进制数字值输出，或以多个数字值输出。 结果，像素的显示灰度随时变化。 因此，可以显示清晰的图像。 例如，可以在从黑暗的地方或室内的荧光灯到室外的阳光下的宽范围内获得确保可视性的显示装置。

公开(公告)号：US08723760B2

公开(公告)日：2014-05-13

申请号：US11832307

申请日：2007-08-01

申请人： Mitsuaki Osame ,  Aya Anzai ,  Jun Koyama ,  Makoto Udagawa ,  Masahiko Hayakawa ,  Shunpei Yamazaki

发明人： Mitsuaki Osame ,  Aya Anzai ,  Jun Koyama ,  Makoto Udagawa ,  Masahiko Hayakawa ,  Shunpei Yamazaki

IPC分类号： G09G3/30

CPC分类号： H01L33/08 ,  G09G3/3233 ,  G09G2300/0426 ,  G09G2300/0842 ,  G09G2310/0254 ,  G09G2320/043 ,  H01L27/3211 ,  H01L27/3262 ,  H01L27/3265 ,  H01L27/3295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A-light-emitting device which realizes a high aperture ratio and in which the quality of image is little affected by the variation in the characteristics of TFTs. A large holding capacitor Cs is not provided in the pixel portion but, instead, the channel length and the channel width of the driving TFTs are increased, and the channel capacitance is utilized as Cs. The channel length is selected to be very larger than the channel width to improve current characteristics in the saturated region, and a high VGS is applied to the driving TFTs to obtain a desired drain current. Therefore, the drain currents of the driving TFTs are little affected by the variation in the threshold voltage. In laying out the pixels, further, wiring is arranged under the partitioning wall and the driving TFTs are arranged under the wiring in order to avoid a decrease in the aperture ratio despite of an increase in the size of the driving TFT. In the case of the 3-transistor pixels, the switching TFT and the erasing TFT are linearly arranged to further increase the aperture ratio.

摘要翻译： 实现高开口率并且图像质量几乎不受TFT的特性变化影响的A发光器件。 在像素部分中不设置大的保持电容器Cs，而是增加了沟道长度和沟道宽度，并且将沟道电容用作Cs。 选择沟道长度非常大于沟道宽度以改善饱和区域中的电流特性，并且将高VGS施加到驱动TFT以获得期望的漏极电流。 因此，驱动TFT的漏极电流几乎不受阈值电压的变化的影响。 此外，在布置像素时，布线布置在分隔壁下方，并且驱动TFT布置在布线下方，以避免开口率的降低，尽管驱动TFT的尺寸增加。 在3晶体管像素的情况下，开关TFT和擦除TFT被线性布置以进一步增加开口率。

公开(公告)号：US08552933B2

公开(公告)日：2013-10-08

申请号：US10876714

申请日：2004-06-28

申请人： Jun Koyama ,  Mitsuaki Osame ,  Yu Yamazaki ,  Aya Anzai ,  Ryota Fukumoto

发明人： Jun Koyama ,  Mitsuaki Osame ,  Yu Yamazaki ,  Aya Anzai ,  Ryota Fukumoto

IPC分类号： G09G3/30

CPC分类号： G09G3/3225 ,  G09G3/2022 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2300/0866 ,  H01L27/3262 ,  H01L2251/5323

摘要： The invention provides a light emitting device and an element substrate in which a luminance variation of light emitting elements among pixels due to variation in characteristics of driving transistors can be suppressed even without suppressing the off-current of a switching transistor low or increasing the capacitance of a capacitor. A gate of a first transistor is connected to a first scan line, and a gate of a second transistor is connected to a second scan line. A connection between a signal line and a gate of a third transistor is controlled by the first transistor. The second transistor and the third transistor are connected in series between a pixel electrode of a light emitting element and a power supply line. The signal line, the second scan line and the power supply line are disposed in parallel, while the first scan line is crossed with the signal line, the second scan line and the power supply line.

摘要翻译： 本发明提供了一种发光器件和元件衬底，其中即使不抑制开关晶体管的截止电流低或增加电容的电容，也可以抑制由于驱动晶体管的特性的变化而导致的像素之中的发光元件的亮度变化 一个电容器。 第一晶体管的栅极连接到第一扫描线，第二晶体管的栅极连接到第二扫描线。 信号线和第三晶体管的栅极之间的连接由第一晶体管控制。 第二晶体管和第三晶体管串联连接在发光元件的像素电极和电源线之间。 当第一扫描线与信号线，第二扫描线和电源线交叉时，信号线，第二扫描线和电源线并联布置。

公开(公告)号：US20120218238A1

公开(公告)日：2012-08-30

申请号：US13407863

申请日：2012-02-29

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Satoshi Seo ,  Hiroko Abe ,  Mitsuaki Osame

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Satoshi Seo ,  Hiroko Abe ,  Mitsuaki Osame

IPC分类号： G09G5/10

CPC分类号： G09G3/3258 ,  G09G2320/029 ,  G09G2320/0295 ,  G09G2320/041 ,  G09G2320/045 ,  G09G2320/048

摘要： A display device includes a current source, a first transistor, a second transistor, and a light-emitting element. One electrode of the light-emitting element is electrically connected to the current source through a source and a drain of the first transistor. The same electrode of the light-emitting element is also electrically connected to a wiring through a source and a drain of the second transistor.

摘要翻译： 显示装置包括电流源，第一晶体管，第二晶体管和发光元件。 发光元件的一个电极通过第一晶体管的源极和漏极电连接到电流源。 发光元件的相同电极也通过第二晶体管的源极和漏极电连接到布线。

公开(公告)号：US20120181540A1

公开(公告)日：2012-07-19

申请号：US13432009

申请日：2012-03-28

申请人： Makoto Udagawa ,  Masahiko Hayakawa ,  Jun Koyama ,  Mitsuaki Osame ,  Aya Anzai

发明人： Makoto Udagawa ,  Masahiko Hayakawa ,  Jun Koyama ,  Mitsuaki Osame ,  Aya Anzai

IPC分类号： H01L33/08

CPC分类号： H01L27/3262 ,  H01L27/12 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/3276 ,  H01L29/78675 ,  H01L29/78696 ,  H01L51/52

摘要： The present invention provides a TFT that has a channel length particularly longer than that of an existing one, specifically, several tens to several hundreds times longer than that of the existing one, and thereby allowing turning to an on-state at a gate voltage particularly higher than the existing one and driving, and allowing having a low channel conductance gd. According to the present invention, not only the simple dispersion of on-current but also the normalized dispersion thereof can be reduced, and other than the reduction of the dispersion between the individual TFTs, the dispersion of the OLEDs themselves and the dispersion due to the deterioration of the OLED can be reduced.

摘要翻译： 本发明提供了一种具有特定长度的TFT的沟道长度，特别是比现有TFT长的几十到几百倍，特别是在栅极电压下变为导通状态 高于现有的和驾驶，并允许具有低通道电导gd。 根据本发明，不仅可以减小导通电流的简单分散，而且可以降低其归一化色散，并且除了各个TFT之间的色散的降低之外，OLED本身的分散和由于 可以降低OLED的劣化。