利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

82 条记录 (耗时 0.028 秒)

    Optical recording material, and optical recording medium
    52.
    发明授权
    Optical recording material, and optical recording medium 失效
    光学记录材料和光学记录介质

    公开(公告)号：US5891542A

    公开(公告)日：1999-04-06

    申请号：US982499

    申请日：1997-12-02

    申请人： Junji Tominaga ,  Takashi Kikukawa ,  Isamu Kuribayashi ,  Makoto Takahashi

    发明人： Junji Tominaga ,  Takashi Kikukawa ,  Isamu Kuribayashi ,  Makoto Takahashi

    IPC分类号： B41M5/26 ,  C03C17/22 ,  C23C14/06 ,  G11B7/243 ,  B32B3/00

    CPC分类号： G11B7/243 ,  C03C17/22 ,  C03C2217/289 ,  G11B2007/24308 ,  G11B2007/24314 ,  G11B2007/24316 ,  G11B7/252 ,  G11B7/254 ,  G11B7/258 ,  Y10S428/913 ,  Y10S430/146 ,  Y10T428/21

    摘要： One object of the invention is to achieve a phase change type optical recording medium having high degree of modulation and recording sensitivity, and another object of the invention is to achieve a phase change type optical recording medium having already stable write/read characteristics at the time of the first overwriting. The optical recording medium comprises a recording layer made up of an optical recording material containing given amounts of In, Ag, Te and Sb. In one Raman spectrum embodiment of the optical recording there are a scattering peak I-1 having a Raman shift in a range of 113 to 117 cm.sup.-1 and a scattering peak I-2 having a Raman shift in a range of 123 to 127 cm.sup.-1, said scattering peak I-2 being larger in half-width than said scattering peak I-1. In another Raman spectrum embodiment, there are a scattering peak II-1 having a Raman shift in a range of 105 to 125 cm.sup.-1 and a scattering peak II-2 having a Raman shift in a range of 140 to 160 cm.sup.-1, said scattering peak II-1 being higher in intensity than said scattering peak II-2.

    摘要翻译： 本发明的一个目的是实现具有高调制度和记录灵敏度的相变型光学记录介质，并且本发明的另一个目的是实现当时具有稳定的写入/读取特性的相变型光学记录介质 的第一次覆盖。 光记录介质包括由含有给定量的In，Ag，Te和Sb的光记录材料构成的记录层。 在光记录的一个拉曼光谱实施例中，存在拉曼位移在113至117cm -1范围内的散射峰I-1和拉曼位移在123至127cm的范围内的散射峰I-2 -1，所述散射峰I-2的半宽度大于所述散射峰I-1。 在另一个拉曼光谱实施例中，存在拉曼位移在105至125cm -1范围内的散射峰II-1和拉伸位移在140至160cm -1范围内的散射峰II-2， 所述散射峰II-1的强度高于所述散射峰II-2。

    Method for preparing phase change optical recording medium
    53.
    发明授权
    Method for preparing phase change optical recording medium 失效
    制备相变光记录介质的方法

    公开(公告)号：US5627012A

    公开(公告)日：1997-05-06

    申请号：US598913

    申请日：1996-02-09

    申请人： Junji Tominaga ,  Ryo Inaba ,  Susumu Haratani

    发明人： Junji Tominaga ,  Ryo Inaba ,  Susumu Haratani

    IPC分类号： B41M5/26 ,  C23C14/06 ,  G11B7/0045 ,  G11B7/243 ,  G11B7/26 ,  C23C14/34

    CPC分类号： C23C14/0623 ,  G11B7/243 ,  G11B7/26 ,  G11B2007/24308 ,  G11B2007/2431 ,  G11B2007/24314 ,  G11B2007/24316 ,  G11B7/00454 ,  Y10S430/146

    摘要： An optical recording medium is prepared by forming on a substrate a phase change recording layer comprising elements A, B, C and optional D wherein A is silver and/or gold, B is antimony and/or bismuth, C is tellurium and/or selenium, D is indium or a mixture of indium and aluminum and/or phosphorus. Formation of the recording layer is carried out by the step of sputtering an A--C base metal and the step of sputtering a B base metal optionally containing D in this successive order or reverse order; or by the step of sputtering an A--C base metal, the step of sputtering a B base metal, and the step of sputtering a D base metal in this successive order or reverse order. Since the resulting recording layer is already crystallized, the method eliminates a need for extra initialization.

    摘要翻译： 通过在基板上形成包含元素A，B，C和任选D的相变记录层来制备光记录介质，其中A是银和/或金，B是锑和/或铋，C是碲和/或硒 ，D是铟或铟和铝和/或磷的混合物。 记录层的形成通过溅射A-C基体金属的步骤和以任选地含有D的B基底金属以相继的顺序或相反的顺序溅射的步骤进行; 或通过溅射A-C基底金属的步骤，溅射B母材的步骤，以及以相继的顺序或相反顺序溅射D母材的步骤。 由于所得记录层已经结晶，所以该方法消除了对额外的初始化的需要。

    Solid-state memory and semiconductor device
    55.
    发明授权
    Solid-state memory and semiconductor device 失效
    固态存储器和半导体器件

    公开(公告)号：US08396335B2

    公开(公告)日：2013-03-12

    申请号：US12690711

    申请日：2010-01-20

    申请人： Junji Tominaga ,  Takayuki Shima ,  Alexander Kolobov ,  Paul Fons ,  Robert Simpson

    发明人： Junji Tominaga ,  Takayuki Shima ,  Alexander Kolobov ,  Paul Fons ,  Robert Simpson

    IPC分类号： H01L45/00

    CPC分类号： H01L45/1625 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144

    摘要： A solid memory may include a recording layer including Ge, Sb and Te as major components. The recording layer may include a superlattice. The recording layer may include multi-layers each having a parent phase showing a phase transformation in solid-states, the phase transformation causing change in electrical property of the recording layer. The recording layer may include an Sb2Te3 layer that includes at least one period of a first lamination of a first Te-atomic layer, a first Sb-atomic layer, a second Te-atomic layer, a second Sb-atomic layer, and a third Te-atomic layer in these order, a GeTe layer that includes at least one period of a second lamination of a fourth Te-atomic layer and a Ge-atomic layer, and an Sb layer that includes a plurality of Sb-atomic layers.

    摘要翻译： 固体存储器可以包括包括Ge，Sb和Te作为主要成分的记录层。 记录层可以包括超晶格。 记录层可以包括多层，每层具有显示固态相变的母相，该相变引起记录层的电性能的变化。 记录层可以包括Sb2Te3层，其包括第一Te原子层，第一Sb原子层，第二Te原子层，第二Sb原子层和第三Te原子层的第一层叠的至少一个周期 Te原子层，包括第四Te原子层和Ge原子层的第二层叠的至少一个周期的GeTe层和包括多个Sb原子层的Sb层。

    Superlattice device, manufacturing method thereof, solid-state memory including superlattice device, data processing system, and data processing device
    56.
    发明授权
    Superlattice device, manufacturing method thereof, solid-state memory including superlattice device, data processing system, and data processing device 失效
    超晶格器件及其制造方法，包括超晶格器件，数据处理系统和数据处理器件的固态存储器

    公开(公告)号：US08335106B2

    公开(公告)日：2012-12-18

    申请号：US12772340

    申请日：2010-05-03

    申请人： Kazuo Aizawa ,  Isamu Asano ,  Junji Tominaga ,  Alexander Kolobov ,  Paul Fons ,  Robert Simpson

    发明人： Kazuo Aizawa ,  Isamu Asano ,  Junji Tominaga ,  Alexander Kolobov ,  Paul Fons ,  Robert Simpson

    IPC分类号： G11C11/34

    CPC分类号： G11C13/0004 ,  G11C2213/55 ,  G11C2213/72 ,  G11C2213/79 ,  H01L45/065 ,  H01L45/144 ,  H01L45/1625

    摘要： To include a superlattice laminate having laminated thereon a first crystal layer of which crystal lattice is a cubic crystal and in which positions of constituent atoms are reversibly replaced by application of energy, and a second crystal layer having a composition different from that of the first crystal layer, and an orientation layer that is an underlaying layer of the superlattice laminate and causes a laminated surface of the first crystal layer to be (111)-orientated. According to the present invention, the laminated surface of the first crystal layer can be (111)-orientated by using the orientation layer as an underlaying layer. In the first crystal layer of which laminated surface is (111)-orientated, a crystal structure reversibly changes when a relatively low energy is applied. Therefore, characteristics of a superlattice device having this crystal layer can be enhanced.

    摘要翻译： 为了包括其上层压有晶格为立方晶的第一晶体层，其中构成原子的位置被能量可逆地替代的超晶格层压体，以及具有与第一晶体不同的组成的第二晶体层 层，以及作为超晶格层叠体的垫层的取向层，使第一结晶层的层叠表面（111）取向。 根据本发明，通过使用取向层作为底层，第一晶体层的层叠表面可以是（111）取向的。 在层叠表面为（111）取向的第一晶体层中，当施加相对低的能量时，晶体结构可逆地变化。 因此，可以提高具有该晶体层的超晶格器件的特性。

    Mold for optical device with anti-reflection structure, method for producing the same, and optical device
    57.
    发明授权
    Mold for optical device with anti-reflection structure, method for producing the same, and optical device 有权
    具有防反射结构的光学装置用模具及其制造方法以及光学装置

    公开(公告)号：US08226837B2

    公开(公告)日：2012-07-24

    申请号：US12515188

    申请日：2007-10-02

    申请人： Kazuma Kurihara ,  Takayuki Shima ,  Junji Tominaga

    发明人： Kazuma Kurihara ,  Takayuki Shima ,  Junji Tominaga

    IPC分类号： B29D11/00

    CPC分类号： G02B1/118 ,  B29C33/42 ,  B29C45/00 ,  Y10T428/24355

    摘要： A process for producing through simple operations a molding die for optical device having an antireflective structure of nano-order microscopic uneven plane on a substratum surface. The molding die for optical device having microscopic uneven plane (antireflective structure die plane) on a surface of substratum is produced by a process comprising forming one or more etching transfer layers on substratum; forming thin film for formation of semispherical microparticles on the etching transfer layers; causing the thin film to undergo aggregation, or decomposition, or nucleation of the material by the use of any of thermal reaction, photoreaction and gas reaction or a combination of these reactions so as to form multiple semispherical islandlike microparticles; and using the multiple islandlike microparticles as a protective mask, carrying out sequential etching of the etching transfer layers and substratum by reactive gas to thereby form a conical pattern on the microscopic surface of the substratum.

    摘要翻译： 一种用于通过简单操作生产用于在基底表面上具有纳米级微观不平坦面的抗反射结构的光学装置的模具的方法。 通过包括在基底上形成一个或多个蚀刻转移层的方法，制备在基底表面上具有微观不平坦平面（抗反射结构裸片平面）的光学器件用成型模具。 在蚀刻转印层上形成用于形成半球形微粒的薄膜; 通过使用任何热反应，光反应和气体反应或这些反应的组合，使薄膜发生聚集，分解或成核，从而形成多个半球状的岛状微粒; 并使用多岛状微粒作为保护掩模，通过反应性气体进行蚀刻转移层和底层的顺序蚀刻，从而在基底的微观表面上形成圆锥形图案。

    Pattern forming materials and pattern formation method using the materials
    58.
    发明授权
    Pattern forming materials and pattern formation method using the materials 有权
    图案形成材料和图案形成方法使用材料

    公开(公告)号：US08187786B2

    公开(公告)日：2012-05-29

    申请号：US10531897

    申请日：2003-10-20

    申请人： Joo-Ho Kim ,  Junji Tominaga ,  Masashi Kuwahara

    发明人： Joo-Ho Kim ,  Junji Tominaga ,  Masashi Kuwahara

    IPC分类号： G03F7/00

    CPC分类号： G11B7/261 ,  B41M5/26 ,  B41M5/368 ,  B41M5/46 ,  B41M5/465

    摘要： A pattern forming materials includes a thermal sensitive material layer formed on a target substrate, a first light-to-heat converting layer formed between the thermal sensitive material layer and the target substrate, and a second light-to-heat converting layer formed on a surface of the thermal sensitive material layer opposite to the first light-to-heat converting layer, the thermal sensitive material layer being interposed between the first and second light-to-heat converting layers. A higher aspect ratio fine pattern can be formed in the thermal sensitive material layer made of photoresist using heat generated in the first and second light-to-heat converting layers formed on both surfaces of the thermal sensitive material layer.

    摘要翻译： 图案形成材料包括形成在目标基板上的热敏材料层，形成在热敏材料层和目标基板之间的第一光热转换层和形成在热敏材料层上的第二光热转换层 所述热敏材料层的表面与所述第一光热转换层相对，所述热敏材料层插入在所述第一和第二光热转换层之间。 可以在形成在热敏材料层的两个表面上的第一和第二光热转换层中产生的热量的光致抗蚀剂材料层中形成更高的纵横比精细图案。

    Recording medium having high melting point recording layer, information recording method thereof, and information reproducing apparatus and method therefor
    60.
    发明授权
    Recording medium having high melting point recording layer, information recording method thereof, and information reproducing apparatus and method therefor 有权
    具有高熔点记录层的记录介质，其信息记录方法及其信息再现装置及方法

    公开(公告)号：US07572496B2

    公开(公告)日：2009-08-11

    申请号：US10514422

    申请日：2003-05-16

    申请人： Joo-Ho Kim ,  Junji Tominaga

    发明人： Joo-Ho Kim ,  Junji Tominaga

    IPC分类号： B32B3/02

    CPC分类号： B82Y10/00 ,  G11B7/24 ,  G11B7/243 ,  G11B7/257 ,  G11B7/2585 ,  G11B7/259 ,  G11B2007/24306 ,  Y10T428/21

    摘要： A simple-structured recording medium without a mask layer and information recording and reproducing methods, which resolve thermal stability related problems arising during reproduction, the recording medium including a high melting point recording layer between first and second dielectric layers. The method of recording information on the recording medium involves irradiating a laser beam onto the recording medium to induce reaction and diffusion in the high melting point recording layer and the first and second dielectric layers. The method of reproducing information recorded on such a super-resolution near-field recording medium by the above method involves generating plasmon using crystalline particles of the high melting point recording layer and the first and second dielectric layers as a scatter source to reproduce information regardless of a diffraction limit of a laser used.

    摘要翻译： 具有掩模层的简单结构的记录介质和信息记录和再现方法，其解决在再现期间产生的热稳定性相关问题，记录介质包括第一和第二介电层之间的高熔点记录层。 在记录介质上记录信息的方法包括将激光束照射到记录介质上以在高熔点记录层和第一和第二介电层中引起反应和扩散。 通过上述方法再现记录在这样的超分辨率近场记录介质上的信息的方法包括使用高熔点记录层和第一和第二介电层的结晶粒子作为散射源来产生等离子体，以再现信息，而不管 使用的激光衍射极限。